BC807 ... BC808 BC807 ... BC808 IC = -800 mA VCES = -30 ...-50 V hFE ~ 160/250/400 Ptot = 310 mW Tjmax = 150C SMD General Purpose PNP Transistors SMD Universal-PNP-Transistoren Version 2017-01-19 Typical Applications Signal processing, Switching, Amplification Commercial grade 1) +0.1 1.1 -0.2 2.9 0.1 3 1 1.30.1 Type Code Pb Mechanische Daten 1) Mechanical Data ) Taped and reeled 1.90.1 2=E RoHS Besonderheiten Universell anwendbar Drei Stromverstarkungsklassen Konform zu RoHS, REACH, Konfliktmineralien 1 1 2 1=B Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) EE WE 2.4 0.2 0.4 +0.1 -0.05 Typische Anwendungen Signalverarbeitung, Schalten, Verstarken Standardausfuhrung 1) EL V SOT-23 (TO-236) 3000 / 7" Weight approx. 3=C Dimensions - Mae [mm] Gegurtet auf Rolle 0.01 g Gewicht ca. Case material UL 94V-0 Gehausematerial Solder & assembly conditions 260C/10s Lot- und Einbaubedingungen MSL = 1 Type Code BC807-16 = 5A or 5CR BC807-25 = 5B or 5CS BC807-40 = 5C or 5CT Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren BC808-16 = 5E or 5CR BC808-25 = 5F or 5CS BC808-40 = 5G or 5CT BC817, BC818 Maximum ratings 2) Grenzwerte 2) BC807 BC808 Collector-Emitter-volt. - Kollektor-Emitter-Spannung E-B short - VCES 50 V 30 V Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 45 V 25 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 310 mW 3) Collector current - Kollektorstrom (dc) - IC 800 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 1A Peak Base current - Basis-Spitzenstrom - IBM 200 mA Tj TS -55...+150C -55...+150C Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur 1 2 3 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25C, unless otherwise specified - TA = 25C, wenn nicht anders angegeben Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC807 ... BC808 Characteristics Kennwerte Tj = 25C Min. Typ. Max. hFE 100 160 250 - - - 250 400 630 hFE 40 - - - VCEsat - - 0.7 V - VBEsat - - 1.3 V - VBE - - 1.2 V - ICB0 - - - - 100 nA 5 A - IEB0 - - 100 nA fT - 100 MHz - CCBO - 12 pF - 1 DC current gain - Kollektor-Basis-Stromverhaltnis ) Group -16 Group -25 Group -40 - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 500 mA 2 Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. ) - IC = 500 mA, - IB = 50 mA Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung ) 2 - IC = 500 mA, - IB = 50 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 1 V, - IC = 500 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 20 V, (E open) - VCB = 20 V, Tj = 125C, (E open) Emitter-Base cutoff current - Emitter-Basis-Reststrom - VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, - IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient Warmewiderstand Sperrschicht - Umgebung RthA < 420 K/W 2) 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] 1 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp.1) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 2 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG