TCLT1104-1 - Vishay Presicion Group

TCLT110. Series

www.vishay.com Vishay Semiconductors

Rev. 2.3, 22-Sep-11 1Document Number: 83514

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Optocoupler, Phototransistor Output, SOP-6L5,

Half Pitch, Long Mini-Flat Package

DESCRIPTION

The TCLT110. series consists of a phototransistor optically

coupled to a gallium arsenide infrared-emitting diode in a

5-lead SOP-6L package.

APPLICATIONS

• Switchmode power supplies

• Computer peripheral interface

• Microprocessor system interface

FEATURES

• SMD low profile 5 pin package

• Isolation test voltage 5000 VRMS

• CTR flexibility available see order information

• Special construction

• Extra low coupling capacitance

•Connected base

• DC input with transistor output

• Creepage distance > 8 mm

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

AGENCY APPROVALS

• UL1577, file no. E76222

• CSA E76222 22.2 bulletin 5A

• BSI IEC 60950 IEC 60065

• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5

(pending), available with option 1

•FIMKO

Note

• See the safety standard approval list “Agency Table” for more

detailed information.

543

17295-1

ORDERING INFORMATION

TCLT110#

PART NUMBER

AGENCY

CERTIFIED/PACKAGE

CTR (%)

5 mA 10 mA 5 mA

UL, cUL, VDE, BSI, FIMKO 50 to 600 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400

SOP-6L5 TCLT1100 TCLT1102 TCLT1103 TCLT1104 TCLT1105 TCLT1106 TCLT1107 TCLT1108 TCLT1109

10.2 mm

SOP-6L5

TCLT110. Series

www.vishay.com Vishay Semiconductors

Rev. 2.3, 22-Sep-11 2Document Number: 83514

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

(1) Wave soldering three cycles are allowed. Also refer to “Assembly Instruction” (www.vishay.com/doc?80054).

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

INPUT

Reverse voltage VR6V

Forward current IF60 mA

Forward surge current tP ≤ 10 μs IFSM 1.5 A

Power dissipation Pdiss 100 mW

Junction temperature Tj125 °C

OUTPUT

Collector emitter voltage VCEO 70 V

Emitter collector voltage VECO 7V

Collector current IC50 mA

Collector peak current tP/T = 0.5, tP ≤ 10 ms ICM 100 mA

Power dissipation Pdiss 150 mW

Junction temperature Tj125 °C

COUPLER

Isolation test voltage (RMS) VISO 5000 VRMS

Total power dissipation Ptot 250 mW

Operating ambient temperature range Tamb - 55 to + 100 °C

Storage temperature range Tstg - 55 to + 125 °C

Soldering temperature (1) Tsld 260 °C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

INPUT

Forward voltage IF = ± 50 mA VF1.25 1.6 V

Junction capacitance VR = 0 V, f = 1 MHz Cj50 pF

OUTPUT

Collector emitter voltage IC = 1 mA VCEO 70 V

Emitter collector voltage IE = 100 μA VECO 7V

Collector emitter leakage current VCE = 20 V, IF = 0 A ICEO 10 100 nA

COUPLER

Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V

Cut-off frequency VCE = 5 V, IF = 10 mA,

RL = 100 Ωfc110 kHz

Coupling capacitance f = 1 MHz Ck0.3 pF

TCLT110. Series

www.vishay.com Vishay Semiconductors

Rev. 2.3, 22-Sep-11 3Document Number: 83514

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety

ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to

DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5

CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

IC/IF

VCE = 5 V, IF = 5 mA TCLT1100 CTR 50 600 %

VCE = 5 V, IF = 10 mA

TCLT1102 CTR 63 125 %

TCLT1103 CTR 100 200 %

TCLT1104 CTR 160 320 %

VCE = 5 V, IF = 1 mA

TCLT1102 CTR 22 45 %

TCLT1103 CTR 34 70 %

TCLT1104 CTR 56 100 %

VCE = 5 V, IF = 5 mA

TCLT1105 CTR 50 150 %

TCLT1106 CTR 100 300 %

TCLT1107 CTR 80 160 %

TCLT1108 CTR 130 260 %

TCLT1109 CTR 200 400 %

SAFETY AND INSULATION RATED PARAMETERS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Partial discharge test voltage -

routine test 100 %, ttest = 1 s Vpd 2.0 kV

Partial discharge test voltage -

lot test (sample test)

tTr = 60 s, ttest = 10 s,

(see figure 2)

VIOTM 8kV

Vpd 1.68 kV

Insulation resistance

VIO = 500 V RIO 1012 Ω

VIO = 500 V, Tamb = 100 °C RIO 1011 Ω

VIO = 500 V, Tamb = 150 °C

(construction test only) RIO 109Ω

Forward current Isi 130 mA

Power dissipation Pso 265 mW

Rated impulse voltage VIOTM 8kV

Safety temperature Tsi 150 °C

Clearance distance 8.0 mm

Creepage distance 8.0 mm

Insulation distance (internal) 0.40 mm

0 25 50 75 125

100

150

200

300

Tsi - Safety Temperature (°C)

150

94 9182-2

100

250

IR-diode

Isi (mA)

Phototransistor

Pso (mW)

13930

, t2 = 1 s to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

VIOTM

Vpd

VIOWM

VIORM

ttest

tTr = 60 s tstres

t3t4

TCLT110. Series

www.vishay.com Vishay Semiconductors

Rev. 2.3, 22-Sep-11 4Document Number: 83514

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Test Circuit, Non-Saturated Operation

Fig. 4 - Test Circuit, Saturated Operation

Fig. 5 - Switching Times

SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω,

(see figure 3) td3.0 μs

Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω,

(see figure 3) tr3.0 μs

Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω,

(see figure 3) ton 6.0 μs

Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω,

(see figure 3) ts0.3 μs

Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω,

(see figure 3) tf4.7 μs

Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω,

(see figure 3) toff 5.0 μs

Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ,

(see figure 4) ton 9.0 μs

Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ,

(see figure 4) toff 10.0 μs

Channel I

Channel II

95 10804

= 50 Ω

= 50 µs

T= 0.01

+ 5 V

50 Ω100 Ω

= 2 mA; adjusted through

input amplitude

Oscilloscope

= 1 MΩ

= 20 pF

Channel I

Channel II

95 10843

RG= 50 Ω

tp= 50 µs

T= 0.01

+ 5 V

50 Ω1 kΩ

IF= 10 mA

Oscilloscope

≥

CL20 pF

1 MΩ

≤

tpt

10 %

90 %

100 %

ton

tstf

toff

tpPulse duration

tdDelay time

trRise time

ton (= td + tr) Turn-on time

Storage time

Fall time

toff (= ts + tf) Turn-off time

96 11698

TCLT110. Series

www.vishay.com Vishay Semiconductors

Rev. 2.3, 22-Sep-11 5Document Number: 83514

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters

PACKAGE MARKING

22534

7.50 ± 0.20

0.10 ± 0.10

0.70 + 0.30

- 0.40

technical drawings

according to DIN

specications

8.20

10.80

Possible footprint

2.54

0.90

4.10 max.

3.80

2.00

2.30 max.

2.54 nom.

0.45 ± 0.1

+ 0.30

- 0.40

10.20

0.20 + 0.10

- 0.05

1.27 nom.

Pin no. 1 identication

TCLT1103

V YWW 68

VISHAY

SO-6L5

Document Number 83246

Rev. 1.1, 10-Dec-03

Vishay Semiconductors

www.vishay.com

SO-6L5

Package Dimensions in mm

15227

www.vishay.com

Document Number 83246

Rev. 1.1, 10-Dec-03

VISHAY

SO-6L5

Vishay Semiconductors

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operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

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known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

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Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the

use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

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Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

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substances and do not contain such substances.

We reserve the right to make changes to improve technical design

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Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number: 91000 www.vishay.com

Revision: 11-Mar-11 1

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