2N3904 2N3904 IC = 200 mA hFE1 ~ 200 Tjmax = 150C General Purpose NPN Transistors Universal-NPN-Transistoren VCEO = 40 V Ptot = 625 mW Version 2017-12-06 Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Features General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) 18 9 2 x 2.54 Dimensions - Mae [mm] Pb EL V E BC Besonderheiten Universell anwendbar Konform zu RoHS, REACH, Konfliktmineralien 1) RoHS EE WE 23.5 16 TO-92 (10D3) Typische Anwendungen Signalverarbeitung, Schalten, Verstarken Standardausfuhrung 1) Mechanical Data 1) Mechanische Daten 1) Taped in ammo pack (Raster 2.54) 4000 Weight approx. 0.18 g Gegurtet in Ammo-Pack (Raster 2.54) Gewicht ca. Case material UL 94V-0 Gehausematerial Solder & assembly conditions 260C/10s Lot- und Einbaubedingungen MSL N/A Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 2N3906 Maximum ratings 2) Grenzwerte 2) 2N3904 Collector-Emitter-voltage - Kollektor-Emitter-Spannung B open VCEO 40 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 60 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V Ptot 625 mW 3) IC 200 mA Tj TS -55...+150C -55...+150C Power dissipation - Verlustleistung Collector current - Kollektorstrom DC Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics Kennwerte Tj = 25C Min. Typ. Max. hFE 40 70 100 60 30 - - - - - - - 300 - - 4 DC current gain - Kollektor-Basis-Stromverhaltnis ) IC = IC = IC = IC = IC = 1 2 3 4 0.1 mA, 1 mA, 10 mA, 50 mA, 100 mA, VCE VCE VCE VCE VCE = = = = = 1 1 1 1 1 V V V V V Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25C, unless otherwise specified - TA = 25C, wenn nicht anders angegeben Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 2N3904 Characteristics Kennwerte Tj = 25C Min. Typ. Max. Small signal current gain - Kleinsignal-Stromverstarkung hfe 100 - 400 Input impedance - Eingangs-Impedanz hie 1 k - 10 k Output admittance - Ausgangs-Leitwert hoe 1 S - 40 S Reverse voltage transfer ratio - Spannungsruckwirkung hre 0.5*10 - 8*10-4 VCEsat - - - - 0.2 V 0.3 V VBEsat 0.65 V - - - 0.85 V 0.95 V ICBX - - 50 nA IEBV - -- 50 nA fT 300 MHz - - CCBO - - 4 pF CEBO - - 8 pf F - - 5 dB VCC = 3 V, VBE = 0.5 V IC = 10 mA, IB1 = 1mA td - - 35 ns tr - - 35 ns VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA ts - - 200 ns tf - - 50 ns h-Parameters at/bei VCE = 10 V, - IC = 1 mA, f = 1 kHz -4 Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCE = 30 V, VEB = 3 V Emitter-Base cutoff current - Emitter-Basis-Reststrom - VCE = 30 V, - VEB = 3 V Gain-Bandwidth Product - Transitfrequenz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 1 A, RG = 1 k, f = 1 kHz Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient Warmewiderstand Sperrschicht - Umgebung RthA < 200 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 2 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG