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©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FQPF12N60CT Rev. A
FQPF12N60CT 600V N-Channel MOSFET
September 2006
QFET®
FQPF12N60CT
600V N-Channel MOSFET
Features
• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
GSDTO-220F Potted
FQPF Series
Symbol Parameter FQPF12N60CT Units
VDSS Drain-Source Voltage 600 V
IDDrain Current - Continuous (TC = 25°C) 12* A
- Continuous (TC = 100°C) 7.4* A
IDM Drain Current - Pulsed (Note 1) 48* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 870 mJ
IAR Avalanche Current (Note 1) 12 A
EAR Repetitive Avalanche Energy (Note 1) 5.1 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C) 51 W
- Derate above 25°C 0.41 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FQPF12N60CT Units
RθJC Thermal Resistance, Junction-to-Case 2.43 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
* Drain current limited by maximum junction temperature
2www.fairchildsemi.com
FQPF12N60CT Rev. A
FQPF12N60CT 600V N-Channel MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Device Marking Device Package Reel Size Tape Width Quantity
FQPF12N60CT FQPF12N60CT TO-220F -- -- 50
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA
VDS = 480 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A -- 0.53 0.65 Ω
gFS Forward Transconductance VDS = 40 V, ID =6 A (Note 4) -- 13 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1760 2290 pF
Coss Output Capacitance -- 182 235 pF
Crss Reverse Transfer Capacitance -- 21 28 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 12A,
RG = 25 Ω
(Note 4, 5)
-- 30 70 ns
trTurn-On Rise Time -- 85 180 ns
td(off) Turn-Off Delay Time -- 140 290 ns
tfTurn-Off Fall Time -- 90 190 ns
QgTotal Gate Charge VDS = 480 V, ID = 12A,
VGS = 10 V
(Note 4, 5)
-- 48 63 nC
Qgs Gate-Source Charge -- 8.5 -- nC
Qgd Gate-Drain Charge -- 21 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 12 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 12 A,
dIF / dt = 100 A/µs (Note 4)
-- 420 -- ns
Qrr Reverse Recovery Charge -- 4.9 -- µC
3www.fairchildsemi.com
FQPF12N60CT Rev. A
FQPF12N60CT 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
100101
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :※
1. 250µ s Pulse Test
2. TC
= 25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
10-1
100
101
150oC
25oC
-55oC
Not es :※
1. VDS = 40V
2. 250µ s Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
0 5 10 15 20 25 30 35
0.5
1.0
1.5
VGS = 20V
VGS = 10V
Note : T※J = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150℃
Not es :※
1. VGS = 0V
2. 250µ s Pulse Test
25℃
IDR, Reverse Drain Current [A]
V
SD, Source-Drain voltage [V]
10-1 100101
0
500
1000
1500
2000
2500
3000
3500
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Not es ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
C
iss
Capacitance [pF]
V
DS, Drain-Source Voltage [V]
0 1020304050
0
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
Note : I※D
= 12A
VGS, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
4www.fairchildsemi.com
FQPF12N60CT Rev. A
FQPF12N60CT 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Volt age Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :※
1. VGS = 0 V
2. ID
= 250 µ A
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
1. VGS = 10 V
2. ID
= 6.0 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102103
10-2
10-1
100
101
102
100 ms
10 µs
DC
10 ms
1 ms
100 µs
Operation i n This Area
is Limited by R DS( on)
Notes :※
1. TC
= 25 o
C
2. TJ
= 150 o
C
3. Single Pulse
ID, Drain Current [A]
V
DS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
2
4
6
8
10
12
14
ID, Drain Current [A]
TC
, Case Temperature [ ]℃
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
N o tes :※
1. ZθJC(t) = 2.43 /W M ax.℃
2. D uty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square W ave Pulse Duration [sec]
t1
PDM
t2
5www.fairchildsemi.com
FQPF12N60CT Rev. A
FQPF12N60CT 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6www.fairchildsemi.com
FQPF12N60CT Rev. A
FQPF12N60CT 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7www.fairchildsemi.com
FQPF12N60CT Rev. A
FQPF12N60CT 600V N-Channel MOSFET
Package Dimensions
Dimensions in Millimeters
TO-220F Potted
* Front/Back Side Isolation Voltage : 4000V
8www.fairchildsemi.com
FQPF12N60CT Rev. A
FQPF12N60CT 600V N-Channel MOSFET
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an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
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Definition of Terms
ACEx™
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Rev. I20
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