Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. QFET FQPF12N60CT 600V N-Channel MOSFET Features Description * * * * * * These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 12A, 600V, RDS(on) = 0.65 @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G TO-220F Potted GD S FQPF Series S Absolute Maximum Ratings Symbol Parameter FQPF12N60CT Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25C) 12* A IDM Drain Current - Pulsed - Continuous (TC = 100C) (Note 1) 7.4* A 48* A 30 V 870 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 5.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25C) 51 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25C 0.41 W/C -55 to +150 C 300 C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQPF12N60CT Units RJC Thermal Resistance, Junction-to-Case 2.43 C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 C/W (c)2006 Fairchild Semiconductor Corporation FQPF12N60CT Rev. A 1 www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET September 2006 (R) Device Marking Device Package Reel Size Tape Width Quantity FQPF12N60CT FQPF12N60CT TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.5 IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 A 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A gFS Forward Transconductance VDS = 40 V, ID =6 A (Note 4) -- 0.53 0.65 -- 13 -- S -- 1760 2290 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 182 235 pF -- 21 28 pF -- 30 70 ns -- 85 180 ns -- 140 290 ns -- 90 190 ns -- 48 63 nC -- 8.5 -- nC -- 21 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 300 V, ID = 12A, RG = 25 (Note 4, 5) VDS = 480 V, ID = 12A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12 A -- -- 1.4 V trr Reverse Recovery Time -- 420 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 12 A, dIF / dt = 100 A/s -- 4.9 -- C (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQPF12N60CT Rev. A 2 www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET Package Marking and Ordering Information FQPF12N60CT 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 1 10 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : o 150 C o -55 C o 25 C 0 10 Notes : 1. 250s Pulse Test 2. TC = 25 0 10 Notes : 1. VDS = 40V 2. 250s Pulse Test -1 10 0 1 10 10 2 4 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage VGS = 10V 1.0 VGS = 20V 0.5 6 VGS, Gate-Source Voltage [V] 1 10 0 10 150 Notes : 1. VGS = 0V 2. 250s Pulse Test 25 Note : TJ = 25 -1 0 5 10 15 20 25 30 10 35 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics 3500 VGS, Gate-Source Voltage [V] Capacitance [pF] Coss 1500 1000 1.4 VDS = 120V Ciss 2000 1.2 12 10 2500 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 0.8 VSD, Source-Drain voltage [V] Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 500 VDS = 300V VDS = 480V 8 6 4 2 Note : ID = 12A 0 -1 10 0 0 10 1 10 FQPF12N60CT Rev. A 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 6.0 A 0.5 0.0 -100 200 -50 0 12 ID, Drain Current [A] ID, Drain Current [A] 1 1 ms 10 ms 100 ms DC 0 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 2 10 10 8 6 4 2 0 25 -2 10 200 14 10 s 100 s 10 150 Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 2 100 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 10 50 o o TJ, Junction Temperature [ C] 3 10 10 50 75 100 125 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Z JC(t), Thermal Response Figure 11. Transient Thermal Response Curve 10 D = 0 .5 0 0 .2 N o te s : 1 . Z J C (t) = 2 .4 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 10 0 .0 5 -1 0 .0 2 PDM 0 .0 1 t1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQPF12N60CT Rev. A 4 www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FQPF12N60CT 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQPF12N60CT Rev. A 5 www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQPF12N60CT Rev. A 6 www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : 4000V Dimensions in Millimeters FQPF12N60CT Rev. A 7 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. OCXTM SILENT SWITCHER(R) UniFETTM FACT Quiet SeriesTM ACExTM OCXProTM UltraFET(R) GlobalOptoisolatorTM ActiveArrayTM SMART STARTTM OPTOLOGIC(R) GTOTM BottomlessTM SPMTM VCXTM HiSeCTM Build it NowTM StealthTM WireTM OPTOPLANARTM I2CTM CoolFETTM SuperFETTM PACMANTM CROSSVOLTTM SuperSOTTM-3 POPTM i-LoTM DOMETM SuperSOTTM-6 Power247TM ImpliedDisconnectTM EcoSPARKTM SuperSOTTM-8 PowerEdgeTM IntelliMAXTM E2CMOSTM SyncFETTM PowerSaverTM ISOPLANARTM TCMTM PowerTrench(R) LittleFETTM EnSignaTM TinyBoostTM MICROCOUPLERTM FACTTM QFET(R) TinyBuckTM MicroFETTM FAST(R) QSTM TinyPWMTM MicroPakTM QT OptoelectronicsTM FASTrTM TinyPowerTM MICROWIRETM Quiet SeriesTM FPSTM TinyLogic(R) MSXTM RapidConfigureTM FRFETTM MSXProTM RapidConnectTM TINYOPTOTM SerDesTM Across the board. Around the world.TM TruTranslationTM ScalarPumpTM The Power Franchise(R) UHCTM Programmable Active DroopTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 8 FQPF12N60CT Rev. A www.fairchildsemi.com FQPF12N60CT 600V N-Channel MOSFET TRADEMARKS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com