Supertex inc. DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage The DN2470 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Battery operated systems Telecom Supertex's vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device DN2470 Package BVDSX/BVDGX TO-252 (D-PAK) DN2470K4-G IDSS (V) (max) () (typ) (mA) 700 42 500 Absolute Maximum Ratings Package Parameter Value Drain-to-source voltage BVDSX Drain-to-gate voltage BVDGX Gate-to-source voltage 20V Operating and storage temperature RDS(ON) DRAIN SOURCE GATE -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-252 (D-PAK) (K4) Product Marking Si YYWW DN2470 LLLLLLL YY = Year Sealed WW = Week Sealed L = Lot Number = "Green" Packaging Package may or may not include the following marks: Si or TO-252 (D-PAK) (K4) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com DN2470 Thermal Characteristics ID ID Power Dissipation jc ja IDR IDRM Package (continuous) (mA) (pulsed) (mA) @TA = 25OC (W) (OC/W) (OC/W) (mA) (mA) TO-252 170 500 2.5 6.25 50 170 500 Notes: ID (continuous) is limited by max rated Tj of 150OC. Mounted on FR4 board, 25mm x 25mm x 1.57mm Electrical Characteristics (TA = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSX Drain-to-source breakdown voltage 700 - - V VGS = -5.0V, ID = 100A VGS(OFF) Gate-to-source off voltage -1.5 - -3.5 V VDS = 25V, ID = 10A Change in VGS(OFF) with temperature - - -4.5 O mV/ C VDS = 25V, ID = 10A Gate body leakage current - - 100 nA VGS = 20V, VDS = 0V - - 1.0 A VGS = -10V, VDS = Max rating - - 1.0 mA VGS = -10V, TA = 125OC, VDS = 0.8 Max Rating Saturated drain-to-source current - 500 - mA VGS = 0V, VDS = 25V Static drain-to-source on-state resistance - - 42 VGS = 0V, ID = 100mA Change in RDS(ON) with temperature - - 1.1 %/OC VGS = 0V, ID = 100mA 100 - - mmho VDS = 10V, ID = 100mA pF VGS = -10V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 100mA, RGEN = 25, VGS(OFF) IGSS ID(OFF) IDSS RDS(ON) RDS(ON) Drain-to-source leakage current Conditions GFS Forward transconductance CISS Input capacitance - - 540 COSS Common source output capacitance - - 60 CRSS Reverse transfer capacitance - - 25 td(ON) Turn-on delay time - - 30 Rise time - - 45 Turn-off delay time - - 45 Fall time - - 60 Diode forward voltage drop - - 1.8 V VGS = -5.0V, ISD = 200mA Reverse recovery time - 800 - ns VGS = -5.0V, ISD = 200mA tr td(OFF) tf VSD trr Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V VDD 90% t(OFF) tr td(OFF) Supertex inc. Output RGEN tf Input 10% 10% 90% RL 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 D.U.T. DN2470 3-Lead TO-252 (D-PAK) Package Outline (K4) b3 E A c2 E1 4 L3 1 D1 H D 1 2 3 L4 L5 Note 1 b2 Front View View B b e Side View Rear View Gauge Plane A1 Seating Plane L2 L L1 View B Note: 1. Although 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed. Symbol Dimension (inches) A A1 b b2 b3 c2 D D1 E E1 MIN .086 .000* .025 .030 .195 .018 .235 .205 .250 .170 NOM - - - - - - .240 - - - MAX .094 .005 .035 .045 .215 .035 .245 .217* .265 .200* e .090 BSC H L .370 .055 - .060 .410 .070 L1 .108 REF L2 .020 BSC 1 .035 0 0O - - - .040 .060 10 L3 L4 L5 .035 .025* .050 O O 15O JEDEC Registration TO-252, Variation AA, Issue E, June 2004. * This dimension is not specified in the JEDEC drawing. This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO252K4, Version F040910. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. (c)2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-DN2470 B041311 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3