B
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Low equivalent on-resistance; RCE(sat) 93mΩ at 3A
* Gain of 300 at IC=2 Amps and Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -15 V
Collector-Emitter Voltage VCEO -15 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -8 A
Continuous Collector Current IC-3 A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage V(BR)CBO -15 V IC
=-100µA
Collector-Emitter Breakdown Voltage V(BR)CEO -15 V IC
=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE
=-100µA
Collector Cut-Off Current ICBO -0.1 µAVCB
=-10V
Emitter Cut-Off Current IEBO -0.1 µAVEB
=-4V
Collector-Emitter Saturation
Voltage
VCE(sat) -0.15
-0.25
-0.45
-0.5
V
V
V
IC
=-0.5A, IB
=-2.5mA*
IC
=-1A, IB
=-5mA*
IC
=-2A, IB
=-10mA*
IC
=-3A, IB
=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 V IC
=-1A, IB
=-5mA*
Base-Emitter Turn-On Voltage VBE(on) -0.75 V IC=-1A, VCE=-2V*
Static Forward Current Transfer
Ratio
hFE 500
400
300
150
1500 IC
=-10mA, VCE
=-2V*
IC
=-1A, VCE=-2V*
IC
=-2A, VCE=-2V*
IC
=-6A, VCE=-2V*
Transition Frequency fT100 MHz IC
=-50mA, VCE
=-5V
f=50MHz
Input Capacitance Cibo 225 pF VEB
=-0.5V, f=1MHz
Output Capacitance Cobo 25 pF VCB
=-10V, f=1MHz
Switching Times ton
toff
35
400
ns
ns
IC
=-500mA, IB1=-50mA
IB2=-50mA, VCC
=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT788B
C
C
E
3 - 244
-55°C
+25°C
+100°C
+100°C
+25°C
-55°C
0.01 0.1 1 10
0.8
0.6
0
1.6
0.01 0.1 1 10
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain
V- (Volts)
1200
900
600
h- Typical Gain
T
amb
=25°C
-55°C
+25°C
+100°C
+175°C
0
0
V
CE
=2V
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V- (Volts)
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=200
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
1.8
1.4
1.2
1.0
0.4
0.2
I
C
/I
B
=200
V
CE
=2V
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
300
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10 100
1s
DC
100ms
10ms
100
µ
s
1ms
1
0.01
0.1
10
FZT788B
3 - 245
B
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Low equivalent on-resistance; RCE(sat) 93mΩ at 3A
* Gain of 300 at IC=2 Amps and Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -15 V
Collector-Emitter Voltage VCEO -15 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -8 A
Continuous Collector Current IC-3 A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage V(BR)CBO -15 V IC
=-100µA
Collector-Emitter Breakdown Voltage V(BR)CEO -15 V IC
=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE
=-100µA
Collector Cut-Off Current ICBO -0.1 µAVCB
=-10V
Emitter Cut-Off Current IEBO -0.1 µAVEB
=-4V
Collector-Emitter Saturation
Voltage
VCE(sat) -0.15
-0.25
-0.45
-0.5
V
V
V
IC
=-0.5A, IB
=-2.5mA*
IC
=-1A, IB
=-5mA*
IC
=-2A, IB
=-10mA*
IC
=-3A, IB
=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 V IC
=-1A, IB
=-5mA*
Base-Emitter Turn-On Voltage VBE(on) -0.75 V IC=-1A, VCE=-2V*
Static Forward Current Transfer
Ratio
hFE 500
400
300
150
1500 IC
=-10mA, VCE
=-2V*
IC
=-1A, VCE=-2V*
IC
=-2A, VCE=-2V*
IC
=-6A, VCE=-2V*
Transition Frequency fT100 MHz IC
=-50mA, VCE
=-5V
f=50MHz
Input Capacitance Cibo 225 pF VEB
=-0.5V, f=1MHz
Output Capacitance Cobo 25 pF VCB
=-10V, f=1MHz
Switching Times ton
toff
35
400
ns
ns
IC
=-500mA, IB1=-50mA
IB2=-50mA, VCC
=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT788B
C
C
E
3 - 244
-55°C
+25°C
+100°C
+100°C
+25°C
-55°C
0.01 0.1 1 10
0.8
0.6
0
1.6
0.01 0.1 1 10
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain
V- (Volts)
1200
900
600
h- Typical Gain
T
amb
=25°C
-55°C
+25°C
+100°C
+175°C
0
0
V
CE
=2V
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V- (Volts)
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=200
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
1.8
1.4
1.2
1.0
0.4
0.2
I
C
/I
B
=200
V
CE
=2V
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
300
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10 100
1s
DC
100ms
10ms
100
µ
s
1ms
1
0.01
0.1
10
FZT788B
3 - 245
