TO-220 Plastic-Encapsulated Transistors
TIP120, 121, 122 Darlington TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 2 W (Tamb=25℃)
Collector current
ICM: 5 A
Collector-base voltage
V(BR)CBO: TIP120: 60 V
TIP121: 80 V
TIP122: 100 V
Operating and storage junction temperature range
TJ, T stg: -65℃ to +1 5 0 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
TIP120
Collector-base breakdown voltage TIP121
TIP122
V(BR)CBO Ic= 1mA, IE=0
60
80
100
V
TIP120
Collector-emitter breakdown voltage TIP121
TIP12
V(BR)CEO Ic= 100mA, IB=0
60
80
100
V
TIP120
Collector cut-off current TIP121
TIP122
ICBO
VCB= 60V, IE=0
VCB= 80V, IE=0
VCB= 100V, IE=0
0.2
0.2
0.2
uA
TIP120
Collector cut-off current TIP121
TIP122
ICEO
VCE=30V, IB=0
VCE=40V, IB=0
VCE=50V, IB=0
0.5
0.5
0.5
uA
Emitter cu t -o ff cu rren t IEBO V
EB= 5V, IC=0 2 mA
DC current gain hFE VCE= 3V, IC= 0. 5A
VCE= 3V, IC= 3 A
1000
1000
Collector-emitter saturation voltage VCE(sat) IC=3 A , IB=12 mA
IC=5 A , IB=20 mA 2
4 V
Base-emitter ON voltage VBE(on) VCE=3V, IC= 3 A 2.5 V
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
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