Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors TIP120, 121, 122 Darlington TRANSISTOR (NPN) TO-220 FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 2 W (Tamb=25) 3. EMITTER Collector current 5 A ICM: Collector-base voltage TIP120: 60 V V(BR)CBO: TIP121: 80 V TIP122: 100 V Operating and storage junction temperature range TJ, Tstg: 123 -65 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions Collector-emitter breakdown voltage TIP121 V(BR)CBO Ic= 1mA, IE=0 100 TIP120 60 V(BR)CEO Ic= 100mA, IB=0 Collector cut-off current V 80 V VCB= 60V, IE=0 0.2 VCB= 80V, IE=0 0.2 TIP122 VCB= 100V, IE=0 0.2 TIP120 VCE=30V, IB=0 0.5 VCE=40V, IB=0 0.5 VCE=50V, IB=0 0.5 VEB= 5V, IC=0 2 TIP120 TIP121 TIP121 UNIT 100 TIP12 Collector cut-off current 80 TIP122 TIP121 MAX 60 TIP120 Collector-base breakdown voltage MIN ICBO ICEO TIP122 Emitter cut-off current IEBO DC current gain hFE Collector-emitter saturation voltage VCE(sat) Base-emitter ON voltage VBE(on) VCE= 3V, IC= 0.5A 1000 VCE= 3V, IC= 3 A 1000 IC=3 A, IB=12 mA 2 IC=5 A, IB=20 mA 4 VCE=3V, IC= 3 A 2.5 uA uA mA V V