© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 7
1Publication Order Number:
2N7002L/D
2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
•2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable (2V7002L)
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDSS 60 Vdc
Drain−Gate Voltage (RGS = 1.0 MW)VDGR 60 Vdc
Drain Current
− Continuous TC = 25°C (Note 1)
− Continuous TC = 100°C (Note 1)
− Pulsed (Note 2)
ID
ID
IDM
±115
±75
±800
mAdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
225
1.8
556
mW
mW/°C
°C/W
Total Device Dissipation
(Note 4) Alumina Substrate, TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
300
2.4
417
mW
mW/°C
°C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
3
1
2
Device Package Shipping†
ORDERING INFORMATION
2N7002LT1G SOT−23
(Pb−Free)
3000 Tape & Reel
N−Channel
SOT−23
CASE 318
STYLE 21
MARKING
DIAGRAM
2
1
3
2N7002LT3G 10,000 Tape & Reel
http://onsemi.com
2V7002LT1G
SOT−23
(Pb−Free)
3000 Tape & Reel
2V7002LT3G 10,000 Tape & Reel
60 V 7.5 W @ 10 V,
500 mA
RDS(on) MAX
115 mA
ID MAXV(BR)DSS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Not for new design.
1
702 MG
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
702 = Device Code
M = Date Code*
G= Pb−Free Package
2N7002LT1H* 3000 Tape & Reel
2N7002L, 2V7002L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 10 mAdc)
V(BR)DSS 60 − − Vdc
Zero Gate Voltage Drain Current TJ = 25°C
(VGS = 0, VDS = 60 Vdc) TJ = 125°C
IDSS −
−
−
−
1.0
500
mAdc
Gate−Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF − − 100 nAdc
Gate−Body Leakage Current, Reverse
(VGS = −20 Vdc)
IGSSR − − −100 nAdc
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th) 1.0 −2.5 Vdc
On−State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
ID(on) 500 − − mA
Static Drain−Source On−State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on)
−
−
−
−
3.75
0.375
Vdc
Static Drain−Source On−State Resistance
(VGS = 10 V, ID = 500 mAdc) TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
rDS(on)
−
−
−
−
−
−
−
−
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
gFS 80 − − mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss − − 50 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss − − 25 pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss − − 5.0 pF
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time (VDD = 25 Vdc, ID ^ 500 mAdc,
RG = 25 W, RL = 50 W, Vgen = 10 V)
td(on) − − 20 ns
Turn−Off Delay Time td(off) − − 40 ns
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
(IS = 11.5 mAdc, VGS = 0 V)
VSD − − −1.5 Vdc
Source Current Continuous
(Body Diode)
IS− − −115 mAdc
Source Current Pulsed ISM − − −800 mAdc
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N7002L, 2V7002L
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
ID, DRAIN CURRENT (AMPS)
rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain−Source On−Resistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V -55°C25°C
125°C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
2N7002L, 2V7002L
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
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