Copyright@DAWIN Electronics Co., Ltd. All right reserved
Jan. 2010 DH2F100N4SE
Preliminary
Ultra-Fast Soft Recovery Diode Module
Description
Ultra-FRD module devices are optimized to reduce losses
and EMI/RFI in high frequency power conditioning electrical systems.
These diode modules are ideally suited for power converters,
motors drives and other applications where switching losses
are significant portion of the total losses.
Features
☞ Repetitive Reverse Voltage : VRRM = 400V
☞ Low Forward Voltage Drop : VF(typ.) = 1.1V
☞ Average Forward Current : IF(AV.) = 100A @ Tc = 85℃
☞ Ultra-Fast Reverse Recovery Time : trr(typ.) = 50ns
☞ Extensive Characterization of Recovery Parameters
☞ Reduced EMI and RFI
☞ Non Isolation Type Package and 175℃ Operating Junction Temperature
☞ Dual FRD Construction
Applications
High Speed & High Power Converters, Welders,
Various Switching and Telecommunication Power Supply.
Absolute Maximum Ratings @ Tj=25℃(Per Leg)
Symbol Parameter Ratings Unit Conditions
VRRM
VR(DC)
IF(AV)
IFSM
I2t
Tj
Tstg
-
-
-
Repetitive Peak Reverse Voltage
Reverse DC Voltage
Average Forward Current @ Tc = 25℃
@ Tc = 85℃
Surge(non-repetitive) Forward
Current
I2t for Fusing
Junction Temperature
Storage Temperature
Mounting Torque(M6)
Terminal Torque(M6)
Weight
Resistive Load
One Half Cycle at 60Hz,
Peak Value
Value for One Cycle Current,
tw = 8.3ms, Tj = 25℃ Start
Typical Including Screws
400
320
180
100
2000
16.7 * 103
-40 ~ 175
-40 ~ 150
4.0
3.0
85
V
V
A
A
A
A2s
℃
℃
N.m
N.m
g
Non Isolation Type
Device Name DH2F100N4SE
Common Heat Sink
Non Isolation Type
Equivalent Circuit
Optional
Information
1 2
H
(Common Heat Sink)
Ordering Information
Equivalent Circuit and Package
Package : 3DM - 2NIE Series
Please see the package Out line information
1/4
Copyright@DAWIN Electronics Co., Ltd. All right reserved
Jan. 2010 DH2F100N4SE
Preliminary
Thermal Characteristics
Symbol Parameter
Values
Unit Conditions
Rth(j-c) Thermal Resistance(Non Isolation Type) Junction to Case
Min. Typ. Max.
0.45 ℃/W
- -
Electrical Characteristics @ Tj=25℃ (unless otherwise specified)
Symbol Parameter
Values Unit
Conditions
VR
VFM
IRRM
Trr
Cathode Anode Breakdown
Voltage
Maximum Forward Voltage
Repetitive Peak Reverse
Current
Reverse Recovery Time
IR = 100uA
IFM = 100A, Tc = 25℃
IFM = 100A, Tc =100℃
TC = 100℃, VRRM applied
IFM = 100A,
VR = 200V
di/dt=-200A/us
Min. Typ. Max.
-
1.4
1.3
1.0
80
-
V
V
V
mA
ns
ns
400
-
-
-
-
-
-
1.1
1.05
-
50
80
Tc = 25℃
Tc = 100℃
2/4
Copyright@DAWIN Electronics Co., Ltd. All right reserved
Jan. 2010 DH2F100N4SE
Preliminary
1
10
100
1000
0 0.5 1 1.5 2
Forward Voltage Drop VF[V]
Forward Current IF[A]
0
40
80
120
60 80 100 120 140 160
Case Temperature [℃]
Average Forward Current IF(AVG) [A]
Performance Curves
Fig. 1 : Typical Forward Voltage Drop
vs. Instantaneous Forward Current
Fig. 3 : Transient Thermal Impedance(Zthjc)
Characteristics Fig. 4 : Forward Current Derating Curve
TC=25℃
TC=100℃
3/4
Fig. 2 : Typical Reverse Recovery Time
vs. -di/dt
DC
0
20
40
60
80
100 1000
di/dt[A/us]
Reverse Recovery Time,trr,[ns]
0.001
0.01
0.1
1
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Rectangular Pulse Duration[sec]
Thermal Responce Zthjc[℃/w]
Copyright@DAWIN Electronics Co., Ltd. All right reserved
Jan. 2010 DH2F100N4SE
Preliminary
Package Out Line Information
3DM-2NIE Series
4/4
2.5±0.2
MAX 16.8
