BAS16HT1, SBAS16HT1G Switching Diode Features * AEC-Q101 Qualified and PPAP Capable * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 75 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current http://onsemi.com 1 CATHODE 2 1 SOD-323 CASE 477 STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW 1.57 mW/C RqJA 635 C/W TJ, Tstg -55 to 150 C 1. FR-4 Minimum Pad. 2 ANODE MARKING DIAGRAM A6 M A6 M = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping BAS16HT1 SOD-323 3000 / Tape & Reel BAS16HT1G SOD-323 (Pb-Free) 3000 /T ape & Reel SBAS16HT1G SOD-323 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 7 1 Publication Order Number: BAS16HT1/D BAS16HT1, SBAS16HT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max - - - 1.0 50 30 75 - - - - - 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150C) (VR = 25 Vdc, TJ = 150C) IR Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) mAdc Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR - 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W) trr - 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W) QS - 45 pC http://onsemi.com 2 mV BAS16HT1, SBAS16HT1G 820 W +10 V 2.0 k IF 100 mH tr 0.1 mF tp IF t trr 10% t 0.1 mF 90% D.U.T. 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 10 100 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 TA = 25C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 10 0 1.2 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 50 BAS16HT1, SBAS16HT1G PACKAGE DIMENSIONS SOD-323 CASE 477-02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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