BRT11, BRT12, BRT13
www.vishay.com Vishay Semiconductors
Rev. 1.7, 12-Oct-2020 2Document Number: 83689
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
(1) Test AC voltage in accordance with DIN 57883, June 1980
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Forward current IF20 mA
Surge forward current IFSM 1.5 A
Power dissipation t ≤ 10 μs Pdiss 30 mW
OUTPUT
Repetitive peak off-state voltage
BRT11 VDRM 400 V
BRT12 VDRM 600 V
BRT13 VDRM 800 V
RMS on-state current ITRMS 300 mA
Single cycle surge current 50 Hz ITSM 3A
Power dissipation Pdiss 600 mW
COUPLER
Maximum power dissipation Ptot 630 mW
Reference voltage in accordance
with VDE 0110 b Vref 500 VRMS
Reference voltage in accordance
with VDE 0110 b (insulation group C) Vref 600 VDC
Storage temperature range Tstg -40 to +150 °C
Ambient temperature range Tamb -40 to +100 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF- 1.1 1.35 V
Reverse current VR = 6 V IR- - 10 μA
Thermal resistance,
junction to ambient (1) RthJA --750°C/W
OUTPUT
Peak off-state voltage ID(RMS) = 100 μA
BRT11
VDM
- 400 - μA
BRT12 - 600 - μA
BRT13 - 800 - μA
Off-state current TC = 80 °C, VDRM ID-0.5100μA
On-state voltage IT = 300 mA VT--2.3V
Pulse current tp ≤ 5 μs, f = 100 Hz, dItp/dt ≤ 8 A/μs Itp --2A
Critical rate of rise of off-state voltage VD = 0.67 VDRM, Tj = 25 °C dV/dtcr 10 - - kV/μs
VD = 0.67 VDRM, Tj = 80 °C dV/dtcr 5--kV/μs
Critical rate of rise of voltage at
current commutation
VD = 0.67 VDRM, Tj = 25 °C,
dI/dtcrq ≤ 15 A/ms dV/dtcrq 10 - - kV/μs
VD = 0.67 VDRM, Tj = 80 °C,
dI/dtcrq ≤ 15 A/ms dV/dtcrq 5--kV/μs
Critical rate of rise of on-state
at current dI/dtcr 8--A/μs
Holding current VD = 10 V IH- 80 500 μA
Thermal resistance, junction to ambient RthJA --125°C/W