PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch
for applications requiring high voltages.
MMBT54012N5401
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
VCEO Collec t or-Emitter Voltage 150 V
VCBO Collec t or-Base Voltage 160 V
VEBO Emi tter-Bas e V oltage 5.0 V
ICCollect or Current - Cont i nuous 600 mA
TJ, Tstg Operating and Storage Junc tion Temperature Range -55 to +150 °C
Thermal Characteristics T A = 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol Characteristic Max Units
2N5401 *MMBT5401
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Ther mal Resi stan ce, Junction t o Case 83.3 °C/W
RθJ
A
The rmal Resistance , Junctio n to Ambient 200 357 °C/W
CBETO-92
C
B
E
SOT-23
Mark: 2L
2001 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N5401 / MMBT5401
2N5401/MMBT5401, Rev A
3
2N5401 / MMBT5401
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(
BR
)
CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 150 V
V
(
BR
)
CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 160 V
V
(
BR
)
EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collector Cutoff Current VCB = 120 V, IE = 0
VCB = 120 V, IE = 0, T
A
= 100°C50
50 nA
µA
IEBO Emitter Cutoff Curre n t VEB = 3.0 V, IC = 0 50 nA
ON CHARACTERISTICS*
hFE DC Cur r ent Gain IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 50 mA, VCE = 5.0 V
50
60
50 240
VCE(sat)Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.2
0.5 V
V
VBE(sat)Base-Emitter Sa tu ration Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 1.0
1.0 V
V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 10 V,
f = 100 MHz 100 300 MHz
Cobo Output Capacita nce VCB = 10 V, IE = 0,
f = 1.0 MHz 6.0 pF
NF Noise Figu re IC = 250 µA, VCE = 5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
8.0 dB
Symbol Parameter Test Conditions Min Max Units
PNP General Purpose Amplifier
(continued)
*Pulse Test: Pulse Wid th ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.1 1 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0
Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0
Vtf=0 Xtf=0 Rb=10)
Typical Characteristics
C o llec tor- E mitte r Br ea kd o w n
Volt age with Resistance
Between Emitter-Base
0.1 1 10 100 1000
170
180
190
200
210
220
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
Typ i cal Pulsed C urr ent Gai n
vs Collector Cur ren t
0.0001 0.001 0.01 0.1 1
0
50
100
150
200
I - COLLECTOR CURRE NT (A)
h - TYPIC AL PU LSED CURRENT GAIN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
Co l lecto r-Emi tter Satu r ati on
Vo ltage vs C o llector Cu rrent
0.1 1 10 100
0
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLE CTOR -EMITTER VOLTAGE (V)
CESAT
C
β= 10
125 °C
- 40 °C
25 °C
Base-Emi tter ON Voltage vs
Co llector Cur rent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - C OLLECTOR CURRENT (mA)
V - BASE-EMIT TER ON VOLTAGE ( V)
BE(ON)
125 °C
- 40 °C
25 °C
C
V = 5 V
CE
B ase-Emitter Saturati on
Volt age vs C ollec to r C urren t
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BA SE-EM ITTER VOLTAGE (V)
BESAT
C
β= 10
125 °C
- 40 °C
25 °C
Co llector-Cu toff Current
vs Ambien t Temperatur e
25 50 75 100 125 150
0.1
1
10
100
T - AM BIENT TE MPE R ATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 100V
CB
°
CBO
2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)
3
2N5401 / MMBT5401
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
Input and Ou tput Capacitance
vs Reverse Voltage
0.1 1 10 100
0
20
40
60
80
V - REVERSE BIAS VOLTAGE(V)
CAP ACI TAN CE ( p F)
C
f = 1.0 MHz
R
C
cb
eb
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Rev . G
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
FAST
SyncFET™
TinyLogic™
UHC™
VCX™
