2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Max Units 2N5401 625 5.0 83.3 *MMBT5401 350 2.8 200 357 mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N5401/MMBT5401, Rev A (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 150 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 A, IE = 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 120 V, IE = 0 VCB = 120 V, IE = 0, TA = 100C VEB = 3.0 V, IC = 0 V 50 50 50 2N5401 / MMBT5401 PNP General Purpose Amplifier nA A nA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V IC = 50 mA, VCE = 5.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 50 60 50 IC = 10 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz IC = 250 A, VCE = 5.0 V, RS = 1.0 k, f = 10 Hz to 15.7 kHz 100 240 0.2 0.5 1.0 1.0 V V V V 300 MHz 6.0 pF 8.0 dB SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance NF Noise Figure *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0 Vtf=0 Xtf=0 Rb=10) 3 (continued) V CE = 5V 150 125 C 100 25 C 50 - 40 C 0 0.0001 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.6 125 C 0.4 = 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT ( mA) 100 VCESAT- COLLE CTOR-EMITTER VOLTAGE (V) 200 V BE(O N)- BASE-E MITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current V BESAT - BASE -EMITTER VOLTAG E (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.4 0.3 0.2 25 C 125 C 0.1 - 40 C 0 0.1 1 0.1 25 50 75 100 125 T A - AM BIENT TE MPE RATURE (C) 150 100 1 - 40 C 0.8 25 C 0.6 125 C 0.4 V C E = 5V 0.2 0.1 BV CER - BREAKDOWN VOLTAGE (V) I CBO - COLLECTOR CURRENT (nA) V CB = 10 0V 10 1 10 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current 1 10 I C - COLLECTOR CURRENT (mA) 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Collector-Cutoff Current vs Ambient Temperature 100 = 10 220 210 200 190 180 170 0.1 1 10 RESISTANCE (k ) 100 1000 2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Input and Output Capacitance vs Reverse Voltage Power Dissipation vs Ambient Temperature 80 CAPACITANCE (pF) 60 40 C eb 20 C cb 0 0.1 1 10 V R - REVERSE BIAS VOLTAGE(V) 100 PD - POWER DISSIPATION (mW) 700 f = 1.0 MHz 600 500 2N5401 / MMBT5401 PNP General Purpose Amplifier TO-92 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G