FZT751
Document Number DS32208 Rev. 9 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
FZT751
A Product Line of
Diodes Incorporated
60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223
Features
BVCEO > -60V
IC = -3A High Continuous Current
ICM = -6A Peak Pulse Current
Low Saturation Voltage VCE(sat) < -300mV @ -1A
Complementary NPN Type: FZT651
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
Automotive Lighting
MOSFET and IGBT Gate Driving
Ordering Information (Note 4)
Product
Compliance
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
FZT751TA
AEC-Q101
FZT751
7
12
1,000
FZT751TC
AEC-Q101
FZT751
13
12
4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
SOT223
Top View
Device Symbol
Top View
Pin-Out
Green
C
E
B
C
E
C
B
YWW
FZT
751
FZT 751 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
FZT751
Document Number DS32208 Rev. 9 - 2
2 of 7
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March 2015
© Diodes Incorporated
FZT751
A Product Line of
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-3
A
Peak Pulse Current
ICM
-6
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
2
W
(Note 6)
3
W
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
62.5
°C/W
(Note 6)
41.7
°C/W
Thermal Resistance, Junction to Leads
(Note 7)
RθJL
12.9
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT751
Document Number DS32208 Rev. 9 - 2
3 of 7
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March 2015
© Diodes Incorporated
FZT751
A Product Line of
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Thermal Characteristics and Derating Information
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
60
70
110
10m
100m
1
10
110
10m
100m
1
10
Tamb=25°C
25mm x 25mm
2oz FR4
VCE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
IC Collector Current (A)
VCE Collector-Emitter Voltage (V)
020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
50mm x 50mm
2oz FR4
25mm x 25mm
2oz FR4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
Tamb=25°C
25mm x 25mm
2oz FR4
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 110 100 1k
1
10
100
25mm x 25mm
2oz FR4
50mm x 50mm
2oz FR4
Safe Operating Area
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
Tamb=25°C
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Pulse Width (s)
Thermal Resistance (°C/W)
Tamb=25°C
50mm x 50mm
2oz FR4 100µs
1ms
10ms
100ms
1s
DC
VCE(sat)
Limit
VCE Collector-Emitter Voltage (V)
IC Collector Current (A)
FZT751
Document Number DS32208 Rev. 9 - 2
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March 2015
© Diodes Incorporated
FZT751
A Product Line of
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-80
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-60
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
V
IE = -100µA
Collector Cut-Off Current
ICBO
<1
-100
nA
VCB = -60V
-10
µA
VCB = -60V, Tamb = +100°C
Emitter Cut-Off Current
IEBO
<1
-100
nA
VEB = -4V
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
-0.15
-0.3
V
IC = -1A, IB = -100mA
-0.45
-0.6
IC = -3A, IB = -300mA
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
-0.9
-1.25
V
IC = -1A, IB = -100mA
Base-Emitter Turn-On Voltage (Note 9)
VBE(on)
-0.8
-1.0
V
IC = -1A, VCE = -2V
DC Current Gain (Note 9)
hFE
70
200
IC = -50mA, VCE = -2V
100
200
300
IC = -500mA, VCE = -2V
80
170
IC = -1A, VCE = -2V
40
150
IC = -2A, VCE = -2V
Current Gain-Bandwidth Product
fT
100
140
MHz
VCE = -5V, IC = -100mA
f = 100MHz
Turn-On Time
ton
40
ns
VCC = -10V, IC = -500mA
IB1 = IB2 = -50mA
Turn-Off Time
toff
450
ns
Output Capacitance
Cobo
30
pF
VCB = -10V, f = 1MHz
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
FZT751
Document Number DS32208 Rev. 9 - 2
6 of 7
www.diodes.com
March 2015
© Diodes Incorporated
FZT751
A Product Line of
Diodes Incorporated
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
FZT751
Document Number DS32208 Rev. 9 - 2
7 of 7
www.diodes.com
March 2015
© Diodes Incorporated
FZT751
A Product Line of
Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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