EAIRCH eee rrnreerengnrrepreeerenerese BE MINGLE TORE ny PN2369A MMBT2369A Discrete POWER & Signal Technologies MMPQ2369 SOT-23 B Mark: 18 SOIC-16 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Abso | ute Maxi m u m Rati n gs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 15 Vv Voso Collector-Base Voltage 40 Vv VeBo Emitter-Base Voltage 45 Vv Ic Collector Current - Continuous 200 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units PN2369A MMBT2369A* | MMPQ2369 Pp Total Device Dissipation 350 225 1,000 mw Derate above 25C 2.8 1.8 8.0 mWw/C Rec Thermal Resistance, Junction to Case 125 CAW Rea Thermal Resistance, Junction to Ambient 357 556 C Effective 4 Die 125 CAV Each Die 240 oC AN Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation 69ECOdININ / V69ECLEINWN / V69ECNdElectrical Characteristics NPN Switching Transistor TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min | Max | Units OFF CHARACTERISTICS Visriceo Collector-Emitter Breakdown Voltage | Io = 10mA, Ip=0 15 Vv Vierjces Collector-Emitter Breakdown Voltage lo= 10 A, Vee = 0 40 Vv Visricso Collector-Base Breakdown Voltage lo=10pA, Ie =0 40 Vv VieR)EBO Emitter-Base Breakdown Voltage le= 10 vA, Ico=0 45 Vv loBo Collector Cutoff Current Ves = 20 V, le =0 0.4 HA Ves = 20 V, le = 0, Ta = 125C 30 pA ON CHARACTERISTICS Hee DC Current Gain* lo = 10 mA, Vce = 1.0 V 40 120 le =10 mA,Vce =0.35 V,Ta = -55C 20 lo = 100 mA, Vee = 2.0 V 20 VoEat) Collector-Emitter Saturation Voltage* le = 10 mA, lb= 1.0mA 0.2 Vv le = 10 mA, Ig = 1.0 MA,T, = 125C 0.3 Vv le = 30 mA, Ip = 3.0 MA 0.25 Vv Ico = 100 mA, ls = 10 mA 05 Vv Veesat Base-Emitter Saturation Voltage lo = 10 mA, lp=1.0mA 0.7 0.85 Vv le = 10 mA, Ip = 1.0 MA,T, = -55C 1.02 Vv le = 10 mA, Ig = 1.0 MA,T, = 125C 0.59 Vv le = 30 mA, Ip = 3.0 MA 1.15 Vv le = 100 mA, Ig = 10 mA 16 Vv SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance Vog = 5.0 V, le = 0, f = 1.0 MHz 40 pF Cibo Input Capacitance Veg= 0.5 V, Io = 0, f= 1.0 MHz 5.0 pF He Small-Signal Current Gain lo=10mA, Vce= 10 V, 5.0 Rg= 2.0 kQ, f = 100 MHz SWITCHING CHARACTERISTICS (except MMPa2369) ts Storage Time lai = Ipo = Ilo = 10 MA 13 ns ton Turn-On Time Vec = 3.0 V, Ic = 10 mA, 12 ns lei =3.0mA tort Turn-Off Time Voc = 3.0 V, Io = 10 mA, 18 ns ley =3.0 mA, lpo= 15mA *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% Spice Model NPN (Is=44.14f Xtic3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2 Isc=0 Ikr=0 Ro=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fo=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Ti=227.6p Itf=.3 Vtf=4 Xtf=4 Rb=10) 69ECOdININ / V69ECLEINWN / V69ECNdNPN Switching Transistor (continued) DC Typical Characteristics DC Current Gain vs Collector Current 200 Vog=1V oa a Qo Qo hpe - DC CURRENT GAIN a 3S 0.01 0.1 1 10 100 I, - COLLECTOR CURRENT (mA) Base-Emitter Saturation Voltage vs Collector Current BS B =10 = = i) Veesar: BASE-EMITTER VOLTAGE (V) i 1 10 100 300 |, - COLLECTOR CURRENT (mA) a i w i) 0.1 Voegay7 COLLECTOR-EMITT ER VOLTAGE (V) o o a o mn o oN Vee on} BASE-EMITTER ON VOLTAGE (V) ro) Collector-Emitter Saturation Voltage vs Collector Current B =10 1 10 100 500 I, - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current Vog=1V 1 10 100 |, - COLLECTOR CURRENT (mA) Collector-Cutoff Current vs Ambient Temperature fe) Qo o Vog = 20V oa o logo COLLECTOR CURRENT (nA) 3S 1 25 50 100 T, - AMBIENT TEMPERATURE (C) 125 150 69ECOdININ / V69ECLEINWN / V69ECNdNPN Switching Transistor (continued) AC Typical Characteristics Output Capacitances vs. Reverse Bias Voltage F= 1MHz S Cino le = 0 Lat eo =z i 5 Cobo le =0 <x a x o 0.1 05 1.0 5.0 10 50 REVERSE BIAS VOLTAGE (V) Switching Times vs. Ambient Temperature te 2 a J = E oe 4 = ta o e B t le =10 mA, Ig1 =3.0 MA, Ipz = 1.5mA Veco = 3.0V 25 50 75 100 Ta AMBIENT TEMPERATURE (C) Storage Time vs. Turn On and Turn Off Base Currents -10 a 7.0 ns = -8.0 0 aw ma cc 5 -6.0 er w < ao x -4.0 o 9.0 ns z 5 e -2.0 | 1c =30mA 2 Vec= 3.0V 0 0 20 40 60 480 10 12 Ig TURN ON BASE CURRENT (mA) lg2 TURN OFF BASE CURRENT (mA) SWITCHING TIMES (ns} la2 TURN OFF BASE CURRENT (mA) -12 8.0 -6.0 Switching Times vs. Collector Current Veo = 3.0V Ig = 10 Ig = 10 tga ty 20 50 10 20 50 100 300 Ic COLLECTOR CURRENT (mA) Storage Time vs. Turn On and Turn Off Base Currents Ig = 10 mA Veo = 3.0V 0 2.0 4.0 6.0 8.0 10 Ig. TURN ON BASE CURRENT (mA) Storage Time vs. Turn On and Turn Off Base Currents le =100 mA Vec =3.0V 4.0 ns I tol t, = 3.0 ns 0 5 10 15 20 25 30 Ig, TURN ON BASE CURRENT (mA) 69ECOdININ / V69ECLEINWN / V69ECNdNPN Switching Transistor (continued) AC Typical Characteristics (continued) Fall Time vs. Turn On and Turn Off Base Currents ~-6.0 io = 10mA -.0 | Veo =3.0V 40 t= 7.0 ns 1g2 TURN OFF BASE CURRENT (mA} 0 2.0 4.0 6.0 8.0 10 la1 TURN ON BASE CURRENT (mA) Fall Time vs. Turn On and Turn Off Base Currents Ico = 100 mA 3.0 ns Voc = 3.0V , ty = 2.0 ns 4.0 ns ig2 TURN OFF BASE CURRENT (mA) 0 5 10 15 20 25 = =30 le: TURN ON BASE CURRENT (mA) Fall Time vs. Turn On and Turn Off Base Currents -12 le = 30 mA -10 Vee =3.0V -8.0 tp =2.0ns Ig2 ~ TURN OFF BASE CURRENT (mA) 0 20 40 60 80 10 12 \g1 TURN ON BASE CURRENT (mA) Delay Time vs. Base-Emitter OFF Voltage and Turn On Base Current -6.0 Ic = 10 mA / Vec =3.0Vj -5.0 .0 ns 4.0 / / 4.0 ns -2.0 / i / "| ns 4 10 2.0 5.0 10 20 50 Ig1 TURN ON BASE CURRENT (mA) ty = 8.0 ns wo Vaeio) BASE-EMITTER OFF VOLTAGE (V Rise Time vs. Turn On Base Current and Collector Current 50 =< Vec =3.0V = w 10 t, = 2.0 ns x > 5 ad a < a S 10 z rr > - \ = 0.1 1.0 10 100 500 ( -COLLECTOR CURRENT (mA) 69ECOdININ / V69ECLEINWN / V69ECNdNPN Switching Transistor (continued) AC Typical Characteristics (continued) POWER DISSIPATION vs AMBIENT TEMPERATURE 1 = S 0.75 n 2 os & = 9 0.25 co 9 25 50 75 100 125 150 TEMPERATURE (C) Test Circuits 10% Pulse waveform at point ' A Pulse generator Vy Rise Time < 1 ns Source Impedance = 50Q PW > 300ns Duty Cycle < 2% 0 f --------------------10% ' + 90% 1 Ey | I OUT ! tore 1 cocceo= 10, 90% i ty, Pt Mpg = 12 < tt Vy => 20.9 l on it, Vag #7 3.0 Viy = + 15.25 V To sampling oscilloscope input impedance = 502 Pulse generator Rise Time < 1 ns Vy Rise Time < 1ns Source Impedance = 500 PW > 300ns Duty Cycle < 2% FIGURE 2: t, t Measurement Circuit ON? OFF 69ECOdININ / V69ECLEINWN / V69ECNd