BSS63T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 15 2004 Jan 16

DISCRETE SEMICONDUCTORS

BSS63

PNP high-voltage transistor

2004 Jan 16 2

NXP Semiconductors Product data sheet

PNP high-voltage transistor BSS63

FEATURES

•Low current (ma x. 10 0 mA)

•High voltage (max. 100 V).

APPLICATIONS

•High-voltage gen eral purpose

•Switching applications.

DESCRIPTION

PNP high-voltage transistor in a SOT23 plastic package.

NPN complement: BSS64.

MARKING

Note

1. ∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

BSS63 BM∗

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM256

Top view

Fig.1 Simplified outline (SOT23 ) and symbo l .

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BSS63 −plastic surface mounted package; 3 leads SOT23

2004 Jan 16 3

NXP Semiconductors Pr oduct data sheet

PNP high-voltage transistor BSS63

LIMITING VALUES

In accordance with the A bsolute Maximum Rating System (IEC 60134).

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter − −110 V

VCEO collector-emitter voltage open base − −100 V

VEBO emitter-base voltage open collector − −6 V

ICcollector current (DC) − −100 mA

ICM peak collector current − −100 mA

IBM peak base current − −100 mA

Ptot total power dissipation Tamb ≤ 25 °C−250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −90 V −−−100 nA

IE = 0; VCB = −90 V; Tj = 150 °C−−−50 µA

IEBO emitter cut-off current IC = 0; VEB = −6 V −−−100 nA

hFE DC current gain IC = −10 mA; VCE = −1 V 30 − −

IC = −25 mA; VCE = −1 V 30 − −

VCEsat collector-emitter saturation voltage IC = −25 mA; IB = −2.5 mA −−−250 mV

VBEsat base-emitt er saturation voltage IC = −25 mA; IB = −2.5 mA −−−900 mV

Cccollector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz −3−pF

fTtransition freque ncy IC = −25 mA; VCE = −5 V;

f = 100 MHz 50 85 −MHz

2004 Jan 16 4

NXP Semiconductors Pr oduct data sheet

PNP high-voltage transistor BSS63

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2004 Jan 16 5

NXP Semiconductors Pr oduct data sheet

PNP high-voltage transistor BSS63

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this document may have chang ed since this document wa s published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informatio n.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa t ion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other cond itions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betwee n information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conv eyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property rights.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addresses send e- mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document does not fo rm p art of any quotation or cont ra ct, is b elieve d to be accurate and reli a ble and may be chan ged

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other indus trial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the tech nical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/04/pp6 Date of release: 2004 Jan 16 Document orde r number: 9397 750 12424