SPICE MODEL: 2N7002 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * Low On-Resistance: RDS(ON) Low Gate Threshold Voltage SOT-23 Low Input Capacitance A Fast Switching Speed Available in Lead Free/RoHS Compliant Version (Note 2) B Max 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 C G TOP VIEW S D E G Mechanical Data H Case: SOT-23 K Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 * * * Min A D Low Input/Output Leakage * * Dim M J L Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 * * * * L 0.45 0.61 M 0.085 0.180 a 0 8 Drain Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 3 All Dimensions in mm Terminal Connections: See Diagram Marking: K72, K7A, K7B (See Page 2) Gate Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Maximum Ratings Source @ TA = 25C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS 1.0MW VDGR 60 V VGSS 20 40 V ID 115 73 800 mA Pd 300 2.4 mW mW/C RqJA 417 C/W Tj, TSTG -55 to +150 C Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Continuous Continuous @ 100C Pulsed Total Power Dissipation (Note 1) Derating above TA = 25C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS11303 Rev. 17 - 2 1 of 3 www.diodes.com 2N7002 a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit BVDSS 60 Test Condition 70 3/4 V VGS = 0V, ID = 10mA A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25C @ TC = 125C Gate-Body Leakage IDSS 3/4 3/4 1.0 500 IGSS 3/4 3/4 10 nA VGS(th) 1.0 3/4 2.5 V VDS = VGS, ID = 250mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage RDS (ON) 3/4 3.2 4.4 7.5 13.5 W VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A ID(ON) 0.5 1.0 3/4 A VGS = 10V, VDS = 7.5V gFS 80 3/4 3/4 mS Input Capacitance Ciss 3/4 22 50 pF Output Capacitance Coss 3/4 11 25 pF Reverse Transfer Capacitance Crss 3/4 2.0 5.0 pF Turn-On Delay Time tD(ON) 3/4 7.0 20 ns Turn-Off Delay Time tD(OFF) 3/4 11 20 ns Static Drain-Source On-Resistance @ Tj = 25C @ Tj = 125C On-State Drain Current Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W Ordering Information (Note 4) Notes: Device Packaging Shipping 2N7002-7 SOT-23 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: 2N7002-7-F. Marking Information YM K7x = Product Type Marking Code, e.g. K72 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K7x Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS11303 Rev. 17 - 2 2 of 3 www.diodes.com 2N7002 ID, DRAIN-SOURCE CURRENT (A) 1.0 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 0.8 0.6 Tj = 25 C 10V 6 5 VGS = 5.0V 5.5V 4 5.0V 3 0.4 VGS = 10V 2 0.2 1 2.1V 0 0 0 1 3 2 0 5 4 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 6 3.0 5 2.5 4 ID = 500mA 2.0 ID = 50mA 3 2 1.5 1 VGS = 10V, ID = 200mA 1.0 -55 0 -30 -5 20 70 45 95 120 145 0 Tj, JUNCTION TEMPERATURE ( C) Fig. 3 On-Resistance vs Junction Temperature 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage VDS = 10V 9 350 Pd, POWER DISSIPATION (mW) VGS, GATE SOURCE CURRENT (V) 10 8 7 6 TA = +125C TA = +75C 5 4 3 TA = -55C TA = +25C 2 300 250 200 150 100 50 1 0 0 0 0.2 0.4 0.6 1 0.8 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics DS11303 Rev. 17 - 2 3 of 3 www.diodes.com 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE ( C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 2N7002