DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: (TC=25C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Power Dissipation (TA=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD BD135 45 45 TJ,Tstg JC JA BD137 60 60 5.0 1.5 3.0 0.5 12.5 1.25 -65 to +150 10 100 ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) BD135 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=30V 100 ICBO VCB=30V, TC=125C 10 IEBO VEB=5.0V 10 BVCEO IC=30mA 45 VCE(SAT) IC=500mA, IB=50mA 0.5 VBE(ON) VCE=2.0V, IC=500mA 1.0 hFE VCE=2.0V, IC=5.0mA 25 hFE VCE=2.0V, IC=150mA 40 250 hFE VCE=2.0V, IC=500mA 25 SYMBOL hFE TEST CONDITIONS VCE=2.0V, IC=150mA BD139 80 80 BD135-6 BD137-6 BD139-6 MIN MAX 40 100 UNIT V V V A A A W W C C/W C/W BD137 MIN MAX 100 10 10 60 0.5 1.0 25 40 160 25 BD139 MIN MAX 100 10 10 80 0.5 1.0 25 40 160 25 BD135-10 BD137-10 BD139-10 MIN MAX 63 160 BD135-16 BD137-16 BD139-16 MIN MAX 100 250 UNIT nA A A V V V (SEE REVERSE SIDE) R0 BD135 / BD137 / BD139 NPN SILICON TRANSISTOR JEDEC TO-126 CASE - MECHANICAL OUTLINE A D E F G BACKSIDE 1 2 3 H B I C J K Lead Code: 1. Emitter 2. Collector 3. Base R1 SYMBOL A B C D E F G H I J K DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.094 0.106 2.39 2.69 0.047 1.19 0.019 0.029 0.48 0.74 0.295 0.307 7.49 7.80 0.149 3.78 0.118 0.126 3.00 3.20 0.413 0.425 10.49 10.80 0.618 15.70 0.027 0.035 0.69 0.89 0.087 2.21 0.173 4.39 TO-126 (REV:R1)