Semiconductor Group 128/Jan/1998
BUZ 110 SL
SPP80N05L
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available Pin 1 Pin 2 Pin 3
GDS
Type VDS IDRDS(on)Package Ordering Code
BUZ 110 SL 55 V 80 A 0.015
Ω
TO-220 AB Q67040-S4004-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
59
80
A
Pulsed drain current
TC = 25 °C
IDpuls 320
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25
Ω
L = 144 µH, Tj = 25 °C
EAS
460
mJ
Avalanche current,limited by Tjmax IAR 80 A
Avalanche energy,periodic limited by Tjmax EAR 20 mJ
Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
dv/dt
6
kV/µs
Gate source voltage VGS
±
14 V
Power dissipation
TC = 25 °C
Ptot 200
W
Semiconductor Group 228/Jan/1998
BUZ 110 SL
SPP80N05L
Maximum Ratings
Parameter Symbol Values Unit
Operating temperature Tj -55 ... + 175 °C
Storage temperature Tstg -55 ... + 175
Thermal resistance, junction - case RthJC
≤
0.75 K/W
Thermal resistance, junction - ambient RthJA
≤
62
IEC climatic category, DIN IEC 68-1 55 / 175 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS 55 - -
V
Gate threshold voltage
VGS=VDS, ID = 200 µA
VGS(th) 1.2 1.67 2
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
-
-
0.1
-
100
1
0.1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS - 10 100
nA
Drain-Source on-resistance
VGS = 4.5 V, ID = 59 A
VGS = 10 V, ID = 59 A
RDS(on)
-
-
0.0075
0.012
0.01
0.015
Ω
Semiconductor Group 328/Jan/1998
BUZ 110 SL
SPP80N05L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 59 A
gfs 30 - -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 2600 3250
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 750 940
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 395 495
Turn-on delay time
VDD = 30 V, VGS = 4.5 V, ID = 80 A
RG = 2
Ω
td(on)
- 20 30
ns
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 80 A
RG = 2
Ω
tr
- 70 105
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 80 A
RG = 2
Ω
td(off)
- 45 70
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 80 A
RG = 2
Ω
tf
- 25 40
Gate charge at threshold
VDD = 40 V, ID
≥
0.1 A, VGS =0 to 1 V
Qg(th) - 4 6
nC
Gate charge at 5.0 V
VDD = 40 V, ID = 80 A, VGS =0 to 5 V
Qg(5) - 65 100
Gate charge total
VDD = 40 V, ID = 80 A, VGS =0 to 10 V
Qg(total) - 110 165
Gate plateau voltage
VDD = 40 V, ID = 80 A
V(plateau) - 4.5 -
V
Semiconductor Group 428/Jan/1998
BUZ 110 SL
SPP80N05L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS- - 80
A
Inverse diode direct current,pulsed
TC = 25 °C
ISM - - 320
Inverse diode forward voltage
VGS = 0 V, IF = 160 A
VSD - 1.2 2
V
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µs
trr - 90 135
ns
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Qrr - 0.14 0.21
µC
Semiconductor Group 528/Jan/1998
BUZ 110 SL
SPP80N05L
Power dissipation
Ptot =
ƒ
(TC)
0 20 40 60 80 100 120 140 °C 180
TC
0
20
40
60
80
100
120
140
160
180
W
220
Ptot
Drain current
ID =
ƒ
(TC)
parameter: VGS
≥
4 V
0 20 40 60 80 100 120 140 °C 180
TC
0
10
20
30
40
50
60
70
A
90
ID
Safe operating area
ID =
ƒ
(VDS)
parameter: D = 0, TC = 25°C
0
10
1
10
2
10
3
10
A
ID
10 0 10 1 10 2
V VDS
R
DS(on) = V
DS / I
D
DC
10 ms
1 ms
100 µs
10 µs
tp = 8.7µs
Transient thermal impedance
Zth JC =
ƒ
(tp)
parameter: D = tp / T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 628/Jan/1998
BUZ 110 SL
SPP80N05L
Typ. output characteristics
ID =
ƒ(
VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
VDS
0
20
40
60
80
100
120
140
A
180
ID
VGS [V]
a
a2.5
b
b3.0
c
c3.5
d
d4.0
ee4.5
f
f5.0
g
g5.5
h
h6.0
i
i6.5
j
j7.0
k
k8.0
l
Ptot = 200W
l10.0
Typ. drain-source on-resistance
RDS (on) =
ƒ(
ID)
parameter: tp = 80 µs, Tj = 25 °C
0 20 40 60 80 100 120 A160
ID
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
Ω
0.050
RDS (on)
VGS [V] =
a
2.5
VGS [V] =
a
a
3.0
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
g
g
6.0
h
h
6.5
i
i
7.0
j
j
8.0
k
k
10.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS
≥
2 x ID x RDS(on)max
012345678V10
VGS
0
10
20
30
40
50
A
70
ID
Semiconductor Group 728/Jan/1998
BUZ 110 SL
SPP80N05L
Drain-source on-resistance
RDS (on) =
ƒ
(Tj)
parameter: ID = 59 A, VGS = 4.5 V
-60 -20 20 60 100 °C 180
Tj
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
Ω
0.050
RDS (on)
typ
98%
Gate threshold voltage
VGS(th)= f (Tj)
parameter:VGS=VDS,ID = 200µA
-60 -20 20 60 100 140 V200
Tj
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
3.0
VGS(th)
min
typ
max
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
0 5 10 15 20 25 30 V40
VDS
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
Forward characteristics of reverse diode
IF =
ƒ
(VSD)
parameter: Tj, tp = 80 µs
0
10
1
10
2
10
3
10
A
IF
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
VSD
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 175 °C typ
Tj = 175 °C (98%)
Semiconductor Group 828/Jan/1998
BUZ 110 SL
SPP80N05L
Avalanche energy EAS = f (Tj)
parameter:ID=80 A,VDD =25 V
RGS =3.8
Ω
, L = 144 µH
20 40 60 80 100 120 140 °C 180
Tj
0
50
100
150
200
250
300
350
400
mJ
500
EAS
Typ. gate charge
VGS =
ƒ
(QGate)
parameter: ID puls = 80 A
0 20 40 60 80 100 120 nC 160
QGate
0
2
4
6
8
10
12
V
16
VGS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V(BR)DSS =
ƒ
(Tj)
-60 -20 20 60 100 °C 180
Tj
49
51
53
55
57
59
61
V
65
V(BR)DSS
