HMC374 / 374E v00.0405 LOW NOISE AMPLIFIERS - SMT 8 SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz Typical Applications Features The HMC374 / HMC374E is ideal for: Single Supply: Vdd = +2.75 to +5.5V * Cellular/PCS/3G Low Noise Figure: 1.5 dB * WCS, MMDS & ISM High Output IP3: +37 dBm * Fixed Wireless & WLAN No External Matching Required * Private Land Mobile Radio Functional Diagram General Description The HMC374 & HMC374E are general purpose broad band Low Noise Amplifiers (LNA) for use in the 0.3 3 GHz frequency range. The LNA provides 15 dB of gain and a 1.5 dB noise figure from a single positive supply of +2.75 to +5.5V. The low noise figure coupled with a high P1dB (22 dBm) and high OIP3 (37 dBm) make this part ideal for cellular applications. The compact LNA design utilizes on-chip matching for repeatable gain and noise figure performance. To minimize board area the design is offered in a low cost SOT26 package that occupies only 0.118" x 0.118". Electrical Specifi cations, TA = +25 C, Vdd= +5V Parameter Min. Frequency Range Gain 8 - 60 Typ. Max. Min. 0.3 - 1.0 12 Typ. Max. Min. 1.0 - 2.0 15 10 Typ. Max. 2.0 - 3.0 13 6 Units GHz 9 dB Gain Variation Over Temperature 0.01 0.02 0.01 0.02 0.01 0.02 dB/C Noise Figure 1.5 1.9 1.6 2.0 1.8 2.2 dB Input Return Loss 5 8 13 dB Output Return Loss 7 9 9 dB Output 1 dB Compression (P1dB) 22 22 22 dBm Saturated Output Power (Psat) 23 23 23 dBm Output Third Order Intercept (IP3) 37 37 37 dBm Supply Current (Idd) (Vdd = +5V) 90 90 90 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC374 / 374E v00.0405 SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz Broadband Gain & Return Loss 8 Gain vs. Temperature 15 16 5 GAIN (dB) RESPONSE (dB) 10 S21 S11 S22 0 -5 12 8 -10 +25C +85C -40C 4 -15 -20 0 0.5 1 1.5 2 2.5 3 3.5 0 0.3 4 0.6 0.9 1.2 FREQUENCY (GHz) Input Return Loss vs. Temperature 2.1 2.4 2.7 3 3.3 0 -2 RETURN LOSS(dB) +25C +85C -40C -4 RETURN LOSS(dB) 1.8 Output Return Loss vs. Temperature 0 -8 -12 -16 -20 0.3 1.5 FREQUENCY (GHz) +25C +85C -40C -4 -6 LOW NOISE AMPLIFIERS - SMT 20 20 -8 -10 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 -12 0.3 3.3 0.6 0.9 1.2 FREQUENCY (GHz) 1.5 1.8 2.1 2.4 2.7 3 3.3 2.4 2.7 3 3.3 FREQUENCY (GHz) Noise Figure vs. Temperature Output IP3 vs. Temperature 5 40 39 38 37 +25C +85C -40C 3 OIP3(dBm) NOISE FIGURE(dB) 4 2 36 35 +25C +85C -40C 34 33 1 32 31 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 FREQUENCY (GHz) 2.4 2.7 3 30 0.3 0.6 0.9 1.2 1.5 1.8 2.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 61 HMC374 / 374E v00.0405 Psat vs. Temperature 25 25 24 24 23 23 22 22 Psat(dBm) P1dB(dBm) P1dB vs. Temperature 21 20 +25C +85C -40C 19 21 20 18 17 17 16 16 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 15 0.3 3.3 +25C +85C -40C 19 18 15 0.3 0.6 0.9 1.2 FREQUENCY (GHz) Pout (dBm), Gain (dB), PAE (%) +25C +85C -40C -10 -15 -20 -25 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 30 2.7 3 3.3 20 15 10 5 0 -5 -20 3.3 -15 -10 7 21 6 19 5 Gain P1dB Noise Figure 4 3 98 96 94 11 1 92 0 90 -20 9 3.9 4.3 Vdd (Vdc) 4.7 15 100 2 3.5 10 102 13 3.1 5 104 Idd (mA) 23 NOISE FIGURE (dB) 25 15 0 Current vs. Power @ 2 GHz 8 17 -5 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 2 GHz GAIN (dB), P1dB (dBm) 2.4 Pout Gain PAE 25 FREQUENCY (GHz) 8 - 62 2.1 35 -5 2.7 1.8 Power Compression @ 2 GHz 0 -30 0.3 1.5 FREQUENCY (GHz) Reverse Isolation vs. Temperature ISOLATION (dB) LOW NOISE AMPLIFIERS - SMT 8 SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz 5.1 5.5 -15 -10 -5 0 5 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 15 HMC374 / 374E v00.0405 Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +7.0 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5.0 Vdc) 15 dBm 2.7 89 Channel Temperature 150 C 3.0 89 5.0 90 5.5 90 Continuous Pdiss (T = 85 C) (derate 7.5 mW/C above 85 C) 0.488 W Thermal Resistance (channel to lead) 133 C/W Storage Temperature -65 to +150 C Operating Temperature -40 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 8 LOW NOISE AMPLIFIERS - SMT Absolute Maximum Ratings SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC374 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC374E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H374 XXXX [2] 374E XXXX [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 63 HMC374 / 374E v00.0405 LOW NOISE AMPLIFIERS - SMT 8 8 - 64 SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz Pin Descriptions Pin Number Function Description 1,4 N/C These pins may be connected to RF/DC ground. Performance will not be affected. 2, 5 GND These pins must be connected to RF/DC ground. 3 IN This pin is DC coupled. An off-chip DC blocking capacitor is required. 6 OUT RF output and DC Bias for the output stage. See application circuit for off-chip components. Interface Schematic Application Circuit Recommended Component Values C1, C2 150 pF C3 1,000 pF C4 4.7 F L1 27 nH For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC374 / 374E v00.0405 SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz 8 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 109258 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4 DC Pin C1, C2 150 pF Capacitor, 0402 Pkg. C3 1000 pF Capacitor, 0603 Pkg. C4 4.7 Capacitor, Tantalum L1 27 nH Inductor, 0603 Pkg. U1 HMC374 / HMC374E Amplifier PCB [2] 109256 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown above. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 65