2SC2712
2020-10-30
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Toshiba Electronic Devices & Storage Corporation
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2712
Audio Frequency General Purpose Amplifier Applications
AEC-Q101 Qualified (Note1).
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 70 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1162
Small package
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC (Note 1)
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1： Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm2 × 3)
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Start of commercial production
1982-10
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB 60 V, IE 0 A
0.1
A
Emitter cut-off current
IEBO
VEB 5 V, IC 0 A
0.1
A
DC current gain
hFE
(Note)
VCE 6 V, IC 2 mA
70
700
Collector-emitter saturation voltage
VCE (sat)
IC 100 mA, IB 10 mA
0.1
0.25
V
Transition frequency
fT
VCE 10 V, IC 1 mA
80
MHz
Collector output capacitance
Cob
VCB 10 V, IE 0 A, f 1 MHz
2.0
3.5
pF
Noise figure
NF
VCE 6 V, IC 0.1 mA, f 1 kHz,
Rg 10 k
1.0
10
dB
Note: hFE classification O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, BL (L): 350 to 700
( ) marking symbol
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2020-10-30
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© 2020
Toshiba Electronic Devices & Storage Corporation
Characteristics Curves
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Toshiba Electronic Devices & Storage Corporation
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
0
50
100
150
200
250
300
025 50 75 100 125 150
COLLECTOR POWER DISSIPATION Pc(mW)
AMBIENT TEMPERATURE Ta(℃)
Pc- Ta
Mounted on an FR4 board
(25.4mm ×25.4mm ×1.6 mm,
Cu pad: 0.8 mm2×3)
2SC2712
2020-10-30
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© 2020
Toshiba Electronic Devices & Storage Corporation
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