DS30041 Rev. B-2 1 of 2 MMBT2222A
MMBT2222A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary PNP Type Available
(MMBT2907A)
·Ideal for Medium Power Amplification and
Switching
Characteristic Symbol MMBT2222A Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC600 mA
Power Dissipation (Note 1) Pd350 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 357 K/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
J
L
M
BC
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
·Case: SOT-23, Molded Plastic
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking: K1P, R1P
·Weight: 0.008 grams (approx.)
SOT-23
Dim Min Max
A0.37 0.51
B1.19 1.40
C2.10 2.50
D0.89 1.05
E0.45 0.61
G1.78 2.05
H2.65 3.05
J0.013 0.15
K0.89 1.10
L0.45 0.61
M0.076 0.178
All Dimensions in mm
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £300ms, duty cycle £2%.
DS30041 Rev. B-2 2 of 2 MMBT2222A
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO 75 ¾VIC= 10mA, IE= 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾VIC= 10mA, IB= 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾VIE= 10mA, IC= 0
Collector Cutoff Current ICBO ¾10 nA
mA
VCB = 60V, IE= 0
VCB = 60V, IE= 0, TA= 150°C
Collector Cutoff Current ICEX ¾10 nA VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current IEBO ¾10 nA VEB = 3.0V, IC= 0
Base Cutoff Current IBL ¾20 nA VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE
35
50
75
100
40
50
35
¾
¾
¾
300
¾
¾
¾
¾
IC= 100mA, VCE = 10V
IC= 1.0mA, VCE = 10V
IC= 10mA, VCE = 10V
IC= 150mA, VCE = 10V
IC= 500mA, VCE = 10V
IC= 10mA, VCE = 10V, TA= -55°C
IC= 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.3
1.0 VIC= 150mA, IB= 15mA
IC= 500mA, IB= 50mA
Base- Emitter Saturation Voltage VBE(SAT) 0.6
¾
1.2
2.0 VIC= 150mA, IB= 15mA
IC= 500mA, IB= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾8pF
VCB = 10V, f = 1.0MHz, IE= 0
Input Capacitance Cibo —25pF
VEB = 0.5V, f = 1.0MHz, IC= 0
Current Gain-Bandwidth Product fT300 ¾MHz VCE = 20V, IC= 20mA,
f = 100MHz
Noise Figure NF ¾4.0 dB VCE = 10V, IC= 100mA,
RS= 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td¾10 ns VCC = 30V, IC= 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time tr¾25 ns
Storage Time ts¾225 ns VCC = 30V, IC= 150mA,
IB1 = IB2 = 15mA
Fall Time tf¾60 ns
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £300ms, duty cycle £2%.
