MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907A) Ideal for Medium Power Amplification and Switching SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G G 1.78 2.05 H H 2.65 3.05 J 0.013 0.15 A C TOP VIEW B C Mechanical Data * * * * * E B Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K1P, R1P Weight: 0.008 grams (approx.) D E M K J L K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Symbol MMBT2222A Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 600 mA Power Dissipation (Note 1) Pd 350 mW RqJA 357 K/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300ms, duty cycle 2%. DS30041 Rev. B-2 1 of 2 MMBT2222A Electrical Characteristics Characteristic @ TA = 25C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 75 3/4 V Collector-Emitter Breakdown Voltage V(BR)CEO 40 3/4 V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 3/4 V IE = 10mA, IC = 0 Collector Cutoff Current ICBO 3/4 10 nA mA VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150C Collector Cutoff Current ICEX 3/4 10 nA VCE = 60V, VEB(OFF) = 3.0V Emitter Cutoff Current IEBO 3/4 10 nA VEB = 3.0V, IC = 0 IBL 3/4 20 nA VCE = 60V, VEB(OFF) = 3.0V hFE 35 50 75 100 40 50 35 3/4 3/4 3/4 300 3/4 3/4 3/4 3/4 IC = 100mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55C IC = 150mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 3/4 0.3 1.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base- Emitter Saturation Voltage VBE(SAT) 0.6 3/4 1.2 2.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo 3/4 8 pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo -- 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 3/4 MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF 3/4 4.0 dB VCE = 10V, IC = 100mA, RS = 1.0kW, f = 1.0kHz Delay Time td 3/4 10 ns Rise Time tr 3/4 25 ns Storage Time ts 3/4 225 ns Fall Time tf 3/4 60 ns OFF CHARACTERISTICS (Note 2) Base Cutoff Current IC = 10mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS Note: VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300ms, duty cycle 2%. DS30041 Rev. B-2 2 of 2 MMBT2222A