Philips Semiconductors Product specification Voltage regulator diodes BZX84 series FEATURES PINNING Total power dissipation: PIN DESCRIPTION max. 250 mW Three tolerance series: +1%, +2% ; anode . Oy fo and +5% 2 not connected e Working voltage range: 3 ca nom. 2.4 to 75 V (E24 range) e Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS 2 1 General regulation functions. 2 DESCRIPTION Co 1 Low-power voltage regulator diodes 4 in small plastic SMD SOT23 packages. _ Top view MAM243 The diodes are available in the normalized E24 +1% (BZX84-A), 42% (BZX84-B) and +5% (BZX84-C) tolerance range. The series consists of 37 types with nominal working Fig.1 Simplified outline (SOT23) and symbol. voltages from 2.4 to 75 V. 1996 Apr 26 7-51Philips. Semiconductors Product specification Voltage regulator diodes BZX84 series MARKING TYPE MARKING | ~ TYPE MARKING TYPE MARKING TYPE MARKING NUMBER CODE NUMBER CODE NUMBER CODE NUMBER CODE Marking codes for BZX84-C2V4 to BZX84-C75: BZX84-C2V4 Zn BZX84-CBV2 Z4p | BZX84-C16 Y5p BZX84-C43 Y15 BZX84-C2V7 Z12 BZX84-C6V8 Z5p BZX84-C18 Y6p BZX84-C47 Y16 BZX84-C3V0 Z13 BZX84-C7V5 Z6p BZX84-C20 Y7p BZX84-C51 Y17 BZX84-C3V3 Z14 BZx84-Cav2 27p BZX84-C22 Y8p BZX84-C56 Y18 BZX84-C3V6 Z15 BZX84-C9V1 Z8p BZX84-C24 Y9p BZX84-C62 Y19 BZX84-C3V9 Z16 BZX84-C10 Z9p BZX84-G27 Y10 BZX84-C68 Y20 BZX84-C4V3 Z17 BZX84-C11 Yip BZX84-C30 Yu BZX84-C75 Y21 BZX84-C4V7 Zip BZX84-C12 Y2p BZX84-C33 Y12 - - BZX84-C5V1 Z2p BZX84-C13 Y3p BZX84-C36 Y13 - - BZX84-C5V6 Z3p BZX84-C15 Y4p BZXx84-C39 14 - - Marking codes for BZX84-B2V4 to BZX84-B75 BZX84-B2V4 Z50 BZX84-B6V2 Z60 BZX84--B16 270 BZX84-B43 280 BZX84-B2V7 Z51 BZX84-B6V8 Z61 BZX84-B18 z71 BZX84-B47 281 BZX84-B3V0 Z52 BZX84-B7V5 262 BZX84-B20 Z72 BZX84-B51 282 BZX84-B3V3 253 BZX84-B8V2 263 BZX84-B22 273 BZX84-B56 283 BZX84-B3V6 254 BZX84-B9V1 264 BZX84-B24 274 BZX84-B62 284 BZX84-B3V9 255 BZX84-B10 Z65 BZX84-B27 275 BZX84-B68 Z85 BZXB4-B4V3 256 BZX84-B11 Z66 BZX84-B30 276 BZX84-B75 286 BZX84-B4V7 257 BZX84-B12 267 BZX84-B33 Z77 ~ - BZX84-B5V1 Z58 BZX84-B13 Z68 BZX84-B36 Z78 ~ - BZX84-B5V6 z59 BZX84-B15 Z69 BZX84-B39 Z79 - - Marking codes for BZX84-A2V4 to BZX84-A75 BZX84-A2V4 50 BZX84-A6V2 Y6o BZX84-A16 Y70 BZX84-A43 Y80 BZX84-A2V7 Y51 BZX84-A6V8 Y61 BZX84-A18 Y71 BZX84-A47 Y81 BZX84-A3V0 52 BZX84-A7V5 Y62 BZX84-A20 Y72 BZX84-A51 Y82 BZX84-A3V3 Y53 BZX84-A8V2 Y63 BZX84-A22 Y73 BZX84-A56 Y83 BZX84-A3V6 Y54 BZX84-A9V1 Y64 BZX84-A24 Y74 BZX84-A62 Y84 BZX84-A3V9 Y55 BZX84-A10 Y65 BZX84-A27 Y75 BZX84-A68 Y85 BZX84-A4V3 Y56 BZX84-A11 Y66 BZX84-A30 Y76 BZX84-A75 Y86 BZX84-A4V7 Y57 BZX84-A12 Y67 BZX84-A33 Y77 ~ - BZX84-A5V1 Y58 BZX84-A13 Y68 BZX84-A36 Y78 - - BZXB4-A5V6 Y59 BZX84-A15 Yeo BZX84-A39 Y79 - - 1996 Apr 26 7-52Philips Semiconductors Product specification Voltage regulator diodes BZX84 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ip continuous forward current - 200 {mA Izsm non-repetitive peak reverse current | tp = 100 js; square wave; see Tables Tj = 25 C prior to surge tand2 Prot total power dissipation Tamb = 25 C; note 1 - 250 mw Pzsm non-repetitive peak reverse power tp = 100 ps; square wave; ~ 40 WwW dissipation Tj = 25 C prior to surge; see Fig.2 Tstg storage temperature ~65 +150 C Tj junction temperature 65 +150 | C Note 1. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total BZX84-A and B and C series T; = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Ve forward voltage Ip = 10 mA; see Fig.3 0.9 Vv Ip reverse current BZX84-A/B/C2V4 VRa=alv 50 HA BZX84-A/B/C2V7 Va=iVv 20 HA BZX84-A/B/C3V0 VR=alVv 10 LA BZX84-A/B/C3V3 Va=tV 5 LA BZX84-A/B/C3V6 Va=ilVv 5 pA BZX84-A/B/C3V9 Va=lVv 3 pA BZX84-A/B/C4V3 Va=tV 3 pA BZX84-A/B/C4V7 Vas2V 3 WA BZX84-A/B/C5V1 VR=2V 2 LA BZX84-A/B/C5V6 VR=2V 1 HA BZX84-A/B/C6V2 VR=4V 3 LA BZX84-A/B/C6V8 VR=4V 2 LA BZX84-A/B/C7V5 VR=5V 1 pA BZX84-A/B/C8V2 Va =5V 700 nA BZX84-A/B/C9V1 Va =6V 500 nA BZX84-A/B/C10 VR=7V 200 nA BZX84-A/B/C11 VR =8V 100 nA BZX84-A/B/C12 VR=8V 100 nA BZX84-A/B/C13 Va =8V 100 nA BZX84-A/B/C15 to 75 VR = 0.7Vznom 50 nA 1996 Apr 26 7-53Product specification Philips Semiconductors BZX84 series Voltage regulator diodes gz'l SS ozz| voc} rer | oz | sz | osz | 09 | ose | eee | ose | og'ez | vere | OZ ez v2 G2"h 09 ooz | at | vor] ss | oz | ose | 09 | ee | soe | ove | oo le | zeze | e212 zz St 09 og: | vor | wri | so | st | sez | o9 | ete | 981 | opod | 096: | Oz'07 | 08'6) 02 S} OZ o91 | vet | v2e| sp | o- | szz jos | tel | o9b | OpeL | OO'Zt | BFet | ZeZI Tl I GZ ove | vzt] vor] op | ot | coz | os | bzt | evs | O'OL | Oz'St | 9191 | 78'St gh oz SL oer | vit | ze | oc 7 of | aoe | os | ose | eer | oes j ogre | Gtot | o8'vt Sk SZ er) oul +e | oz | oe | of | ozt | og | bet | ves | ocr | ozs | eres | 2e2t et gz sg oor | ve |} o9 | sz | oF | oct | og | cat | vee |ozet | ots | eran | sour Zk g2 se o6 | rz | vs | of | of | ost | og | ote | pron | ozs | oa'os | beth | os'or th OE 06 os [vo [spr | oz | 8 | ost | o | gor | v6 | oor | oes | olol | 066 Ol oe OS oz |g | ee | st | 9 | oof | or | 96 | se |eze | zee joz6e | 006 LAG O'r 0S} zo |ov | ze | st | 9 | o8 | or | ze | zz |o9e8 |vo'e |eze | ie ZA8 OF St es lov [gz] at | 9 | oe Joe | oz | oz {sez |sez |ece |are GAL o9 002 sp loe | at | ct | 9 | o8 | oe | az | v9 |re9 |999 |ze9 |ez9 BA9 o9 00z ze [ez |vro | or | 9 | ost | or | oo | os |ze9 |e09 |zz9 | Ele ZAQ o9 oe gz |2t | oz-| or | st | corp | 08 | oo | es [ies Jers foes |+os QAS 0'9 oo zt | go-| zz-| 09 | op | og | oor | vs | ee [ozs |oos {ore | Fos LAS 09 ooe zo | ri-| se-| og | og | cog | sev| os | rv |62r |lov |Szr | Sov LAv o9 OSr o | gz |se-| 06 | ce | o09 | or | or | ov Joer [ter | ser | Ger eAP v9 Os o | gz |se-] o6 | se | 009 | cor | ty | ze |eee |zee | vee | ose 6AE o9 OS o | wz-| se-] o6 | se | oo9 | see | se | ve |zoe |ege | roe |9ge QAE o'9 osp o | vz-| se-| se | se | 009 | ose | Se | ve |zee jece |ree |oce GAC 09 OS o | ve-| se-| se | 08 | 009 | see} ze | sz |o0e |vez |eoe | 262 OAS 09 os o | oz | se-| oot | sz | 009 | oo | oz | sz |sze2 [soz |eze | z92 Lae 09 Os o | o1-| se-| oof | oz | 009 | sez | oe | ce |ove [sez jere | sez pA XV xv XW] GAL | NI | XW] GAL | XW] GAL | XW | NIN | XW | NIA | XW | NIV = que _ - seri ot = 118 wee met vate AU (oy eg -ton | (a) %zF 104 | (vw) EF IOL | XXX (w) N82] AO=4_ | (gpue yp shiz aes) 940g 10 LNSYHND HW L=3Ie] yur g = 92) ye (w) #Pa yu g = 19992) ye V-v8xza SSHSA3SY NVad (4d) Pp OVAW) 2g SONVLSISAY (A) 2A AAULLLSdSY-NON | dVD 30010} 44500 dWSL WILNSUa4sIG AOVIIOA SNIHHOM payioeds eswweujo ssaun 9, gz = 1 PZO/A/V } FAZO/A/W-P8XZ4E OdA} Jed | OIGeL 1996 Apr 26Product specification BZX84 series 7-55 20 se oes |zos|vez|] ssz | se | oos | ozt | ov6z | oz | os gz | osez | szsz | SevZ SL $z'0 ge sez |z1z| 959] ope | o6 | szv | ost | oez | ove | ov'69 | 0999 | e989 | ze'z9 a9 0 ge 9121779] ee/ siz | o8 | ogy | oz | o99 | oes | oz'e9 | o8'09 | zo'z9 | se19 zg 0 Or seg |ozs|zzs] ooz | oz | sep | oor | O09 | ozs | o1-zs | OB ys | 9S9S | HH'SS 9g v0 Ov zzs |ois|99r] og: | 09 | oor | 06 | o's | o'sr | 00'zS | OO'0S | ISIS | 6r'0S 1s $0 Ov sis |torlozr| ozt | os | sze | se | os | ov | o6 zy | olor | ZyZr | sor Lp 90 Or gor |zir|oze| os: | se | sze | se | ogy | oop | o6er | oer | ever | zo'zr ev Z0 Sp ziy|vgoel/vee] oc: | op | ose | o8 | ot | oe | ogee | oz ee | 6e'ee | Lo'ee 6e 80 Sp re | Of | vOe | 06 ge | ose | og | oe | ove | oz'ge | oc'se | ge'9e | rose 98 60 Sb yee | 262 | ze} 08 ge | sze | cz | ose | ove | ozee | ogze | ees | zo'ze ee Ot 0s vez | 992 | ybe | 08 oe | oo | oz | oe | ogz | o9ce | ov'6z | oe'oe | oz'62 oe 0} 0s ese | vez | riz] o8 sz | oo | so | eee | ise | os'ze | ose | zez2 | ez'92 Zz "XVN XvA "XWAW] GAL| NIN] XW | GAL | XW] AL | XW | NI | XW | NIN | XVI | NIW = que - _ = odgazare | AO=#A me ml wee M71) (9) os ton | (a) eet ton | Cw) %eit ion | XK (w) WSz (g pure s6i4 aes) 940g 40 IN3YYND ZHWL=37e | yz = 92 ye (5) Pa yur z = 882} ye v-p8xza 3SUAASH Nvad | = (4d)Po OVAW) 25 JONVLSISSY (A) 2A AALLLLAdaE-NON | dv9 30010 | 44309 dWaL WILNZH34310 JOVLIOA DNDINOM Voltage regulator diodes Philips Semiconductors payloads aswueyjo ssqun '9, gz = {1 SLO/A/V ) LEO/G/V-P8XZg adh, Jaq 2% OGL 1996 Apr 26Philips Semiconductors Product specification Voltage regulator diodes BZX84 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin itp thermal resistance from junction to tie-point 330 KAW Pith j-a thermal resistance from junction to ambient | note 1 500 KAV Note 1. Device mounted on an FR4 printed circuit-board. 1996 Apr 26 7-56Philips Semiconductors Product specification Voltage regulator diodes BZX84 series GRAPHICAL DATA 108 300 MBG781 PzsM F (wW) (mA) 102 1 10-1 1 duration (ms) 10 (1) 1) = 25 C (prior to surge). (2) Tj = 150 C (prior to surge). Fig.2 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 200 100 0.6 0.8 Ve) 1.0 T= 25C. Fig.3 Forward current as a function of forward voltage; typical values. MBG783 Sz (mviK) ~1 -2 Qo 20 40 Iz (ma) 80 BZX84-A/B/C2V4 to AIBICAV3. T, = 25 to 150C. Fig.4 Temperature coefficient as a function of working current; typical values. MBG782 16 20 iz (mA) BZX84-A/B/CAV7 to A/BICI2. T; = 25 to 180 C. Fig.5 Temperature coefficient as a function of working current; typical values. 1996 Apr 26