SANKEN ELECTRIC CO.,LTD. CAUTION / WARNING * The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. * Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. * Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. * When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. * Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. * Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user's written consent to the specifications is requested. * The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. * Anti radioactive ray design is not considered for the products listed herein. * This publication shall not be reproduced in whole or in part without prior written approval from Sanken. * Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or smashed in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed. Contents Examples of Use of Typical Products by Application .............. 2 1 ICs 1-1. Regulator ICs ................................................................................ 7 Application Note Dropper Type Regulator ICs ......................................................... 8 Dropper Type System Regulator ICs Switching Type Regulator ICs ...................................... 16 ................................................... 22 1-2. Power Switch ICs High-side Power Switch ICs ...................................................... 24 Low-side Switch ICs ...................................................... 50 1-3. Motor Driver ICs Stepper-motor Driver ICs DC Motor Driver ICs 1-4. HID Lamp Driver ICs 1-5. Custom ICs ............................................................ 56 ...................................................................... 60 ..................................................................... 64 ....................................................................................... 76 2 Discretes 2-1. Transistors 2-1-1. Transistors ............................................................................ 80 2-1-2. Transistor Arrays ............................................................... 96 2-2. MOS FETs 2-2-1. MOS FETs ......................................................................... 108 2-2-2. MOS FET Arrays ............................................................. 117 2-3. Thyristors 2-3-1. Reverse Conducting Thyristors .............................. 125 2-4. Diodes 2-4-1. Alternator Diodes ........................................................... 127 2-4-2. High-voltage Diodes for Igniter 2-4-3. Power Zener Diodes ................................ 128 ..................................................... 129 2-4-4. General-purpose Diodes ............................................ 130 3 LEDs 3-1. Uni-Color LED Lamps ................................................................ 134 3-2. Bi-Color LED Lamps .................................................................. 137 3-3. Surface Mount LEDs .................................................................. 138 3-4. Infrared LEDs .................................................................................. 140 3-5. Ultraviolet LEDs ............................................................................ 141 3-6. Multi-chip Modules .................................................................... 142 Part Number Index in Alphanumeric Order ......................................... 147 1 Examples of Use of Typical Products by Application Throttle System Motor Driver ICs (p.60 and after) *DC Control IC and full bridge power stage in a single package. Surface-mounting type series are also available. SI-5300 / SPF7301 Driver Transistor Arrays (p.99) *Motor H-bridge of NPN x 2 and PNP x 2 in a single package. With integrated back emf. clamp diode. Alternators SLA8004 driver power transistors (p.68 and after) *Motor With integrated back emf. clamp diode. (p.127) *Diodes Solder and press fit type as well as Zener type is available. 2SA1568 / 2SC4065 SG-9 / SG-10 / SG-14 ICs *Regulator Custom-made (contact our sales reps.) Fuel Injectors transistors (p.84 and after) *Injector Transistors and MOS FETs are available in discretes and arrays in various packages. 2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C / STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103 Headlamps lamp driver ICs (p.64 and after) *HID High-voltage controller IC and 4-circuit power stage in a single package. Direct drive from CPU. SLA2402M / SLA2403M / SMA2409M for HID lamp ignition (p.125 and after) *Thyristors Best suited to C-discharge SW element on high-voltage primary side of an igniter. Integrates a reverse direction diode. High di/dt resistance TFC561D / TFC562D FET arrays for driving HID lamps (p.122) *MOS 4 circuits of N-ch MOS FETs of 450V/7A in a single package. SMA5113 stepper-motor driver ICs for AFS (p.58 and after) *2-ph Low output saturation voltage, integrated recovery diode, surface-mount. SPF7211 2 Ignition System diodes for ignition (p.128) *High-voltage Withstand voltage range: 0.5 to 15kV SHV-01JN / SHV-05J / SHV-06JN *2SD2141 / MN638S ICs *Ignition Custom-made (contact our sales reps.) Ignition transistors (p.89 and after) Room Lamp *Multi-chip LED modules (p.142) Car Navigation and Audio Power Steering *Various LEDs (p.133) driver MOS FETs (p.108 and after) *Motor Various packages integrating low ON resistors, bidirectional Zener diodes, etc. 2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 / 2SK3801 / 2SK3803 / 2SK3851 Tail Lamps LED *Power Custom-made (contact our sales reps.) O2 sensor heater driver MOS FETs (p.115) *Heater Low ON resistor and integral gate protection diode. FKV460S Transmission ABS and VDC solenoid drivers (high-side power switch ICs) (p.26 and after) *AT Integral diagnostic function, surface-mount, 2- and 3-circuit types and other driver MOS FETs (p.108 and after) *Solenoid/motor Various packages from discretes to arrays. diverse models. SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M AT linear solenoid driver (high-side power switch ICs) (p.46 and after) *Integral current detection resistor, current monitor output, surface-mount and 2SK3710 / FKV660S / SLA5027 / SDK08 driver ICs (p.54) *Solenoid/motor Surface-mount 4-circuit type with output voltage monitor. SPF5012 2-circuit types are also available. SPF5017 / SPF5018 3 4 1 ICs 1-1. Regulator ICs Application Note 1-3. Motor Driver ICs .............................................. Dropper Type Regulator ICs .................... 7 8 Stepper-motor Driver ICs SLA4708M (50V, 1.5A) ......................... 56 ................................... 56 58 SI-3001S (5V/1A, With Output ON/OFF Control) ... 8 SPF7211 (40V, 0.8A) ..................................... SI-3003S (5V/0.8A, 3-terminal) ....................... 10 DC Motor Driver ICs .................................... 60 SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12 SI-5300 (40V, 5A) ..................................... 60 SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14 SPF7301 (36V, 7A) ..................................... 62 Dropper Type System Regulator ICs .. 16 SI-3322S (5V, Surface-mount) ........................ 16 1-4. HID Lamp Driver ICs SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18 SLA2402M (500V, 15A) .................................. 64 SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20 SLA2403M (500V, 7A) .................................... 68 ............... 22 ............................................ 22 Switching Type Regulator ICs SI-3201S (5V/3A) SMA2409M (500V, 7A) ................................... 72 1-5. Custom ICs ..................................... 76 1-2. Power Switch ICs High-side Power Switch ICs ................... 24 SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24 SI-5151S (With Diagnostic Function) .............. 26 SI-5152S (With Diagnostic Function) .............. 28 SI-5153S (With Diagnostic Function, Built-in Zener Diode) 30 SI-5154S (With Diagnostic Function, Built-in Zener Diode) 32 SI-5155S (With Diagnostic Function) .............. 34 SLA2501M (With Diagnostic Function, 3-circuits) 36 SLA2502M (With Diagnostic Function, 4-circuits) 38 SPF5003 (With Diagnostic Function, Surface-mount 2-circuits) 40 SPF5004 (With Diagnostic Function, Surface-mount 2-circuits) 42 SPF5007 (With Diagnostic Function, Surface-mount 3-circuits) 44 SPF5017 (Surface-mount 2-circuit, current monitor output function) 46 SPF5018 (Surface-mount, current monitor output function) 48 Low-side Switch ICs ................................... 50 .......... 50 SPF5002A (Surface-mount 4-circuits) SPF5009 (With Diagnostic Function, Surface-mount 4-circuits) 52 SPF5012 (Surface-mount 4-circuits with Output Monitor) 54 5 6 Application Note for Regulator ICs Temperature and Reliability Reliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When mounting ICs on heatsinks, always apply silicone grease and firmly tighten. Air convection should actively be used in actual heat dissipation. The reliability of capacitors and coils, the peripheral components, is also closely related to temperature. A high operating temperature may reduce the service life. Exceeding the allowable temperature may cause coils to be burned or capacitors to be damaged. Make sure that output smoothing coils and input/output capacitors do not exceed their allowable temperature limit in operation. We recommend, in particular, to provide an ample margin for the ratings of coils to minimize heat generation. Power Dissipation (PD) 1. Dropper Type PD = IO * [VIN (mean) - VO] V PD = VO * I O ( 100 - 1) - VF * IO (1 - O ) VIN Efficiency depends on input/output conditions. Refer to the efficiency characteristics. VIN : Input voltage Setting DC Input Voltage Observe the following precautions when setting the DC input voltage: * VIN (min) must be at least the set output voltage plus dropout voltage for the dropper type. It must be at least the recommended lowest input voltage for the switching type. * V IN (max) must not exceed the DC input voltage of the electrical characteristics. Screw Torque Screw torque should be between 0.588 to 0.686 [N * m] (6.0 to 7.0 [kgf * cm]). Recommended silicone grease 2. Switching Type VO : Output voltage generally used. Moreover, the heat dissipation capacity of a heatsink is heavily dependent on how it is mounted. It is therefore important and recommended to measure the heatsink and case temperature in actual operating environments. : Efficiency Volatile type silicone grease may produce cracks after elapse of long term, resulting in reducing heat radiation effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink. VF : Diode forward voltage IO : Output current Heatsink Design The maximum junction temperature Tj (max) and the maximum case temperature Tc (max) given in the absolute maximum ratings are specific to each product type and must be strictly met. Thus, heatsink design must be performed in consideration of the condition of use which affects the maximum power dissipation PD (max) and the maximum ambient temperature Ta (max). To facilitate heatsink design, the relationship between these two parameters is presented in the Ta-PD characteristic graphs. Heatsink design must be performed in the following steps: 1. Obtain the maximum ambient temperature Ta (max) (within the set). 2. Obtain the maximum power dissipation P D (max). 3. Identify the intersection on the Ta-PD characteristic graph and obtain the size of the heatsink to be used. The size of a heatsink has been obtained. In actual applications, a 10 to 20% derating factor is Type Suppliers G746 Shin-Etsu Chemical Co., Ltd. YG6260 GE Toshiba Silicones Co., Ltd. SC102 Dow Corning Toray Silicone Co., Ltd. Others This product may not be connected in parallel. The switching type may not be used for current boosting and stepping up voltage. 7 Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S External Dimensions (unit: mm) Features Output current of 1.0A 5-terminal type <output on/off control, variable output voltage (rise only)> Voltage accuracy of 2% Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A Built-in overcurrent, overvoltage and thermal protection circuits Withstands external electromagnetic noises TO220 equivalent full-mold package 3.2 0.2 4.2 0.2 2.8 0.2 a (2.0) 0.950.15 (Ta = 25C) Ratings Unit +0.2 Conditions DC Input Voltage VIN 35 V Output Control Terminal Voltage VC VIN V Output Current IO 1 1.0 * A PD1 18 W With infinite heatsink PD2 1.5 W Stand-alone without heatsink 0.85 - 0.1 (8.0) Symbol (4.6) Absolute Maximum Ratings 5.0 0.6 2.6 0.1 b Parameter (17.9) 16.90.3 4.00.2 7.90.2 0.5 10.00.2 +0.2 -0.1 0.45 P1.70.7* 4=6.80.7 3.9 0.7 Power Dissipation 1 Junction Temperature Tj - 40 to +125 C Operating Temperature TOP - 40 to +100 C Storage Temperature Tstg - 40 to +125 C Junction to Case Thermal Resistance j-c 5.5 C/W Junction to Ambient-Air Thermal Resistance j-a 66.7 C/W (4.3) 8.2 0.7 2 3 4 1. GND 2. VC (on/off) 3. Vo 4. Vosense 5. VIN 5 a: Part No. b: Lot No. (Forming No. 1101) Stand-alone without heatsink Equivalent Circuit Diagram Tr1 5 3 VO VIN R1 Electrical Characteristics Symbol VIN Input Voltage VO Output Voltage min typ R3 a 6 *2 4.90 max 30 *1 5.00 Unit Conditions e d V 5.10 V VIN =12 to 16V, IO = 0.4A 0.5 V IO 0.4A IO 1.0A VDIF 1.0 V Line Regulation VO LINE 30 mV IO =0.4A, VIN = 6 to 16V Load Regulation VO LOAD 100 mV IO = 0 to 0.4A Output Voltage Temperature Coefficient VO /T 0.5 mV/C dB f =100 to 120Hz mA IO = 0A RREJ 54 Iq 3 Overcurrent Protection Starting Current I S1 3 1.2 * Output ON VC, IH 2.0 * Output OFF VC, IL 0.8 V Output ON I C, IH 20 A VC = 2.7V Output OFF I C, IL - 0.3 mA VC = 0.4V Vc Terminal R2 1 a : Pre-regulator GND b : Output ON/OFF control c : Thermal protection d : Over-input and overcurrent protection e : Drive circuit f : Error amplifier g : Reference voltage Standard Circuit Diagram D1 A 4 V 5 Control Voltage Control Current VIN 3 SI-3001S OPEN 2 DC input + Notes: *1. Since PD (max) = ( VIN - VO) * IO = 18( W ), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta -PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to -5%. *4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus, LS-TTL direct driving is also possible. 8 R4 g c Vc (on/off) IO =5mA, Ta = -10 to +100C Quiescent Circuit Current 10 f b 2 Dropout Voltage Ripple Rejection 4 VO sense ( Tj= 25C, VIN =14V unless otherwise specified) Ratings Parameter MIC C1 C2 4 1 + CO DC output VO Co : Output capacitor (47 to 100F, 50V) C1, C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. Protection diode. Required as protection against reverse D1 : biasing between input and output. (Recommended diode: Sanken EU2Z.) Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S Electrical Characteristics Io vs VDIF Characteristicsc Line Regulation Load Regulation 5.1 5.1 0.3 0.2 Output voltage VO (V) IO = 0 (A) 0.4 (A) 1.0 (A) 0.4 Output voltage VO (V) Dropout voltage VDIF (V) 0.5 5.0 V IN = 30 ( V) 12 to 16 ( V) 5.5 ( V) 5.0 0.1 4.9 0 0 0.5 0 1.0 4.9 0 5 10 Output current IO (A) 15 20 25 0 30 0 0.5 Output Voltage Temperature Characteristics Rise Characteristics 5.1 1.0 Output current IO (A) Input voltage VIN (V) Quiescent Circuit Current 15 7 Io = 0 (A) 16(V) VIN = 30(V) 5.0 14(V) 5.5(V) VIN -- IOUT condition 5.5 (V) / 1.0 (A) 12 (V) / 0.4 (A) 14 (V) / 0.4 (A) 16 (V) / 0.4 (A) 30 (V) / 0 (A) 4.9 0 --50 0 50 100 Load resistance 5 4 3 12 () 2 0 150 0 2 4 6 8 0 10 0 2 4 6 6 Io = 0 (A) VIN = 6 (V) I o = 0 (A) VIN = 14 (V) 5 5 2 1 ON 10 (V) Output voltage VO (V) Output voltage VO (V) 3 30 (V) 4 3 5.5 (V) 20 (V) 2 14 (V) 0 0 0 1 2 4 3 0 5 0.5 1.0 Output ON/OFF control voltage VC (V) 1.5 2.0 2.5 3.0 Ta --PD Characteristics 20 6 Use G746 silicone grease (Shin-Etsu Chemical) and aluminum heatsink. With infinite heatsink Power Dissipation PD (W) 5 4 3 2 3 2 0 0 125 130 135 140 145 150 155 Ambient temperature Ta (C) Output current IO (A) Overvoltage Protection Characteristics 4 1 1 OFF 10 Thermal Protection Characteristics 6 4 8 Input voltage VIN (V) Overcurrent Protection Characteristics 5 Output voltage VO (V) 5 Input voltage VIN (V) ON/OFF Control Characteristics 6 10 5 () 1 Ambient temperature Ta (C) Output voltage VO (V) Quiescent current lq (mA) 12(V) Output voltage VO (V) Output voltage VO (V) 6 Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 15 200*200*2mm (2.3C/W) 10 100*100*2mm (5.2C/W) 75*75*2mm (7.6C/W) 5 1 Without heatsink 0 10 20 30 40 Input voltage VIN (V) 50 0 --30 -20 0 20 40 60 80 100 Operating temperature Ta (C) 9 Dropper Type Regulator ICs [3-terminal] SI-3003S Features External Dimensions (unit: mm) 3-terminal IC regulator with 0.8A output current Voltage accuracy of 2% Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent full-mold package 4.2 0.2 3.2 0.2 2.8 0.2 16.9 0.3 7.9 0.2 40.2 0.5 10 0.2 Output current b (Ta =25C) Symbol Ratings Unit VIN 35 V 0.8 * IO 2 2.6 0.15 Conditions 0.94 0.15 (13.5) Parameter DC input voltage 2 max a Absolute Maximum Ratings A PD1 22 W With infinite heatsink PD2 1.8 W Stand-alone without heatsink Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C +0.2 0.85 -0.1 Power Dissipation Junction to case thermal resistance j-c 5.5 C/W Junction to ambient-air thermal resistance j-a 66.7 C/W Electrical Characteristics Parameter Symbol Ratings Input voltage VIN 6*2 Output voltage VO 4.90 Dropout voltage VO LINE Load regulation VO LOAD Ripple rejection RREJ Overcurrent protection starting current Stand-alone without heatsink 30 * 1 V 5.00 5.10 V Equivalent Circuit Diagram Conditions VIN VO 5 1 0.5 V IO 0.5A 1.0 V IO 0.8A 30 mV VIN =8 to 16V 100 mV IO =0 to 0.5A dB f=100 to 120Hz mA IO =0A OCP VDIF Line regulation Quiescent circuit current max 54 3 Iq IS1 0.9 * 3 10 Terminal connections 1. VIN a: Part No. 2. (NC) b: Lot No. 3. GND 4. (NC) 5. VO (Forming No. 1115) 1 2 3 4 5 Unit typ 0.45 -0.1 (root dimensions) (Tj=25C, VIN =14V, IO =0.5A unless otherwise specified) min +0.2 4*P1.7 0.15 = 6.8 0.15 DRIVE Junction temperature TSD DET ERR REF 3 GND A Notes: *1. Since P D (max) = (VIN - VO) * IO =22 (W), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta --P D curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, I O=0.5A) drops to -5%. Standard Circuit Diagram D1 *2 1 DC input + *1 VIN C1 C2 N.C 2 SI-3003S 3 5 4 N.C + CO DC output VO Co : Output capacitor (47 to 100F, 50V) *1 C1,C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. *2 D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) 10 Dropper Type Regulator ICs [3-terminal] SI-3003S Electrical Characteristics Io vs VDIF Characteristics Line Regulation Load Regulation 5.1 5.1 0.5 0.3 0.2 5.0 IO =0A =0.2A =0.5A =0.8A 4.9 IO=0.5, 0.8A =0.2A =0A VIN =35V =25V =14V =6V 4.9 0 0 0 0.2 0.4 0.6 0 0.8 5 10 15 20 25 30 0 35 Output Voltage Temperature Characteristics Ground current lg (mA) Output voltage VO (V) 200 4 3 2 50 100 0 2 4 6 8 0 10 Input voltage VIN (V) Ambient temperature Ta (C) Overcurrent Protection Characteristics 6 5 5 VIN =6V 14V 1 4 3 2 0 0.5 1.0 1.5 Output current IO (A) 25 30 35 With silicone grease Heatsink: aluminum 20 200 * 200 * 2mm (2.3C/W) 15 100 * 100 * 2mm (5.2C/W) 10 75 * 75 * 2mm (7.6C/W) 5 Without heatsink 25V 0 20 With infinite heatsink 1 35V 15 25 Power Dissipation PD (W) Output voltage VO (V) 3 10 Ta --PD Characteristics VIN =6V IO=5mA 4 5 Input voltage VIN (V) Thermal Protection Characteristics 6 2 IO=0.8A =0.5A =0.2A =0A 100 0 0 150 150 50 1 0 0.8 250 IO =0A =0.5A =0.8A 5 4.9 -50 0.6 Circuit Current 6 VIN / IO: 30V / 0A 14V / 0.5A 6V / 0.8A 0.4 Output current IO (A) Rise Characteristics 5.1 5.0 0.2 Input voltage VIN (V) Output current IO (A) Output voltage VO (V) 5.0 0.1 0 Output voltage VO (V) Output voltage VO (V) Output voltage VO (V) Dropout voltage VDIF (V) 0.4 2.0 2.5 0 120 140 160 180 200 Ambient temperature Ta (C) 0 -40 0 40 80 100 Operating temperature Ta (C) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 11 Dropper Type Regulator ICs [2-output] SI-3101S External Dimensions (unit: mm) Features Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold package 3.2 0.2 4.2 0.2 2.8 0.2 16.9 0.3 4.0 0.2 7.9 0.2 0.5 10.0 0.2 2.6 0.1 5.0 0.6 (2.0) b 0.95 0.15 (Ta=25C) Ratings Unit DC input voltage VIN 40 V Battery reverse connection VINB -13 * 6 V +0.2 0.85 -0.1 Conditions (8.0) Symbol (4.6) Absolute Maximum Ratings Parameter (17.9) a +0.2 -0.1 0.45 VC VIN CH1 IO1 0.07 * CH2 IO2 0.4 * 1 A PD1 18 W With infinite heatsink PD2 1.5 W Stand-alone without heatsink Tj -40 to +125 C Operating temperature TOP -40 to +115 C Storage temperature Tstg -40 to +125 C Output control terminal voltage P1.7 0.7 * 4 = 6.80.7 One minute 3.9 (4.3) 8.2 0.7 V 1 1. VIN 2. VC (on/off) 3. GND 4. VO1 5. VO2 A Output current 1 2 3 4 5 a: Part No. b: Lot No. Power Dissipation Junction Temperature Junction to case thermal resistance j-c 5.5 C/W Junction to ambient-air thermal resistance j-a 66.7 C/W (Forming No. 1101) Equivalent Circuit Diagram Stand-alone without heatsink VO1 VIN 1 4 DRIVE OCP TSD Electrical Characteristics DET ERR (Tj=25C, VIN =14V unless otherwise specified) REF 5 Ratings Parameter Symbol min typ max Unit VO2 Conditions OCP 6 *2 35 * 1 V OVP CH1 VO1 4.80 5.00 5.20 V CH2 VO2 4.80 5.00 5.20 V IO =0.3A 0.1 V IO1 =0 to 0.05A IO2 =0 to 0.3A DRIVE VIN Input voltage IO =0.05A DET ERR Output voltage Channel-channel voltage difference (VO1 --VO2) Dropout voltage Line regulation VO -0.1 CH1 VDIF1 1.0 V IO1 0.05A CH2 VDIF2 1.0 V IO2 0.4A CH1 VO LINE1 10 30 mV VIN =6 to 18V, IO =0.05A CH2 VO LINE2 10 30 mV VIN =6 to 18V, IO =0.3A CH1 VO LOAD1 30 70 mV IO1=0 to 0.05A CH2 VO LOAD2 40 70 mV IO2 =0 to 0.3A 3 2 VC GND CONT Standard Circuit Diagram D3 Load regulation D2 VIN CH1 RREJ1 54 dB f =100 to 120Hz CH2 RREJ2 54 dB f =100 to 120Hz mA IO1=0A, VC =0V SI- 3101S D1 Ripple rejection 2 Quiescent circuit current Overcurrent protection starting current 0.8 Iq CH1 I (S1) 1 CIN 3 0.1 * 0.5 * 3 I (S1) 2 VCH 4.2 4.5 4.8 V Output OFF VCL 3.2 3.5 3.8 V Output ON I CH 100 A VC =4.8V Output OFF I CL A VC =3.2V Output control voltage Overvoltage protection starting voltage VOVP 35 * 4 V Thermal protection starting temperature TTSD 130 * 5 C Notes: *1. Since P D (max) = (VIN - VO) * IO1 + (VIN - VO2) * IO2 = 18 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the Ta--PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to -5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open. 12 4 VO1 + GND CO1 + CO2 A CH2 -100 3 A Output ON Output control current VC + VO2 5 1 CO1 : CO2 : *1 CIN : Output capacitor (47 to 100F, 50V) Output capacitor (47 to 100F, 50V) Input capacitors (approx. 47F). Tantalum capacitors are recommended for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) Dropper Type Regulator ICs [2-output] SI-3101S Electrical Characteristics Line Regulation (2) 5.1 Load Regulation (1) 5.1 5.1 VC = 5 (V) I O1 = 0 (A) I O1 = 0mA Output voltage VO (V) 50mA 5.0 70mA 4.9 I O2 = 0A 0.3A 5.0 0.5A 5 10 15 20 0 0 25 V IN = 6V 14V 5 Input voltage V IN (V) 10 15 20 0 25 0 10 Rise Characteristics 5.1 20 30 40 50 60 70 Output current IO (mA) Input voltage V IN (V) Load Regulation (2) 22V 5.0 4.9 4.9 0 0 Quiescent Circuit Current 6 VC = 5 (V) I O1 = 0 (A) 10 V IN = 6V,14V 5.0 I O1 = 0 (A) Vc = 0 (V) 5 Output voltage VO (V) Output voltage VO (V) VC = 5 (V) I O2 = 0 (A) 22V Quiescent current lq (mA) Output voltage VO (V) VC = 5 (V) IO2 = 0 (A) Output voltage VO (V) Line Regulation (1) Load resistor 100 4 3 2 71.4 5 1 4.9 0.1 0.2 0.3 0.4 0.5 0 0.6 0 Output current IO (A) 5 5 Output voltage VO1 (V) Output voltage VO2 (V) 6 6V 3 2 OFF ON 8 0 10 0 0 1 2 3 4 5 5 IO2 = 0 (A) VC = 5 (V) 3 4.5V 2 VIN = 6V 14V 22V I O1 = 0 (A) VC = 5 (V) 3 2 1 0 0 0.05 0.1 0.15 0 0.1 0.2 0.3 0.4 Ta--PD Characteristics 6 20 VIN = 6 (V) I O1 = I O2 = 5 (mA) With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum With infinite heatsink Output voltage VO (V) 5 4 3 2 VO1 4 IO1 = I O2 = 5 (mA) VC = 5 (V) 3 VO2 2 1 1 0 0 0.5 0.6 0.7 0.8 Output current IO (A) Overvoltage Protection Characteristics 5 20 4.5V 4 Output current IO (A) Thermal Protection Characteristics 15 Overcurrent Protection Characteristics (2) 5 V IN = 6V 14V 22V 4 0 6 10 6 Output ON/OFF control voltage VC (V) 6 0 Input voltage VIN (V) 1 1 Output voltage VO1 (V) 6 Overcurrent Protection Characteristics (1) 6 V IN = 14V, 22V 4 Input voltage VIN (V) ON/OFF Control Characteristics 4 2 Output voltage VO2 (V) 0 Power Dissipation PD (W) 0 15 200 * 200 * 2mm (2.3C/W) 10 100 * 100 * 2mm (5.2C/W) 75 * 75 * 2mm (7.6C/W) 5 Without heatsink 0 130 140 150 160 Ambient temperature Ta (C) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 10 20 30 Input voltage VIN (V) 40 0 --30 --20 0 20 40 60 80 100 115 Operating temperature Ta (C) 13 Dropper Type Regulator ICs [2-output] SI-3102S External Dimensions (unit: mm) Features Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold miniature package 3.2 0.2 4.2 0.2 2.8 0.2 (17.9) 16.9 0.3 4.0 0.2 7.9 0.2 0.5 10.0 0.2 a 2.6 0.1 Ratings Unit DC input voltage VIN 35 V Battery reverse connection VINB -13 * 6 V Output control terminal voltage VC VIN V CH1 IO1 0.04 * 1 A CH2 IO2 0.1 * 1 A 5.0 0.6 0.95 0.15 (Ta=25C) Symbol +0.2 Conditions 0.85 -0.1 (8.0) Parameter (4.6) Absolute Maximum Ratings (2.0) b +0.2 -0.1 0.45 Output current One minute 3.9 0.7 P1.7 0.7 * 4 = 6.8 0.7 1 PD1 22 W With infinite heatsink PD2 1.8 W Stand-alone without heatsink Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +105 C Storage temperature Tstg 2 3 4 1. VIN 2. VC (on/off) 3. GND 4. VO1 5. VO2 5 Power Dissipation -40 to +150 C Junction to case thermal resistance j-c 5.5 C/W Junction to ambient-air thermal resistance j-a 66.7 C/W (4.3) 8.2 0.7 a: Part No. b: Lot No. (Forming No. 1101) Equivalent Circuit Diagram Stand-alone without heatsink VO1 VIN 1 4 Parameter Symbol VIN Input voltage TSD (Tj = 25C, VIN = 14V unless otherwise specified) Ratings min typ 6 *2 max Unit 30 * 1 V Conditions REF VO1 4.80 5.00 5.20 V IO = 0.04A CH2 VO2 4.80 5.00 5.20 V IO = 0.1A 0.1 V IO1 =0 to 0.04A IO2 =0 to 0.1A 1.0 V IO1 0.04A IO2 0.1A OCP Output voltage Dropout voltage CH1 VO -0.1 VDIF1 5 VO2 CH1 Channel-channel voltage difference (VO1 --VO2) DET ERR CH2 VDIF2 1.0 V CH1 VO LINE1 10 50 mV CH2 VO LINE2 10 50 mV VIN = 6 to 30V, IO = 0.1A CH1 VO LOAD1 30 70 mV IO1 = 0 to 0.04A 70 mV IO2 = 0 to 0.1A OVP DRIVE Electrical Characteristics DRIVE OCP DET ERR 3 2 VC GND CONT VIN = 6 to 30V, IO = 0.04A Line regulation Load regulation CH2 VO LOAD2 40 CH1 RREJ1 54 dB f = 100 to 120Hz CH2 RREJ2 54 dB f = 100 to 120Hz mA IO1 = 0A, VC = 0V Ripple rejection Quiescent circuit current Overcurrent protection starting current 0.8 Iq CH1 I (S1) 1 0.06 * 3 A CH2 I (S1) 2 0.15 * 3 A Output ON VCH 4.2 Output OFF VCL Output ON I CH Output OFF I CL Standard Circuit Diagram D3 D2 VIN 4.5 4.8 V 3.2 3.5 Output control current -100 Overvoltage protection starting voltage VOVP 30 * Thermal protection starting temperature TTSD 151 * 3.8 V 100 A VC = 4.8V + A VC = 3.2V CIN 4 V 5 C 2 VC Notes: *1. Since P D (max) = (VIN - VO) * IO1 + (VIN - VO2) * IO2 = 22 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the Ta--PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to -5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open. 14 SI- 3102S D1 Output control voltage CO1 : CO2 : *1 CIN : VO2 5 1 3 4 VO1 + GND CO1 + CO2 Output capacitor (47 to 100F, 50V) Output capacitor (47 to 100F, 50V) Input capacitors (approx. 47F). Tantalum capacitors are recommended, for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) Dropper Type Regulator ICs [2-output] SI-3102S Electrical Characteristics Line Regulation (1) Line Regulation (2) 5.10 Load Regulation (1) 5.10 5.10 VIN = VC IO2 = 5mA VIN = VC IO1 = 5mA VIN = VC 5.05 IO1 = 0A 20mA 40mA 5.00 4.95 4.90 5.05 IO2 = 0A 50mA 100mA 5.00 Output voltage VO (V) Output voltage VO (V) Output voltage VO (V) 5.05 4.95 4.90 4.85 5 10 15 20 25 30 35 4.95 4.90 4.85 0 VIN = 6V 14V 30V 5.00 4.85 0 5 Input voltage V IN (V) 10 15 20 25 30 35 0 10 Load Regulation (2) Rise Characteristics 5.10 20 30 12 5 10 VC = 0V IO1 = 0A VIN = 6V,14V 5.00 4.95 30V 4.90 4 IO1 = 0A 20mA 40mA 3 2 1 4.85 0 40 60 80 100 1 2 3 4 5 7 0 OFF ON 2 0 VIN = 6V 14V 30V 3 2 4 VIN = 6V 14V 30V 3 2 0 0 20 Output ON/OFF control voltage VC (V) 40 60 80 100 120 0 0.1 Output current IO (mA) VIN = VC IO2 = 5mA With infinite heatsink 2 Power Dissipation PD (W) Output voltage VO (V) 5 3 VO1 4 3 VO2 2 1 1 0 100 0 26 0.4 0.5 25 VIN = 6V IO1 = IO2 = 5mA 4 0.3 Ta--PD Characteristics 6 5 0.2 Output current IO2 (A) Overvoltage Protection Characteristics 6 35 1 0 Thermal Protection Characteristics 30 5 4 6 25 VIN = VC IO1 = 5mA 1 1 5 20 6 Output voltage VO2 (V) Output voltage VO1 (V) 4 4 15 Overcurrent Protection Characteristics (2) 5 3 10 VIN = VC IO2 = 5mA 5 2 5 Input voltage VIN (V) Overcurrent Protection Characteristics (1) VIN = 14V IO2 = 5mA Output voltage VO2 (V) 6 6 1 4 0 0 6 0 6 Input voltage VIN (V) ON/OFF Control Characteristics 3 8 2 Output current IO (mA) Output voltage VO1 (V) Quiescent current lq (mA) Output voltage VO (V) Output voltage VO (V) 5.05 20 50 Quiescent Circuit Current 6 VIN = VC 0 40 Output current IO (mA) Input voltage VIN (V) With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum 20 200 * 200 * 2mm (2.3C/W) 15 100 * 100 * 2mm (5.2C/W) 10 75 * 75 * 2mm (7.6C/W) 5 Without heatsink 120 140 180 200 220 240 Ambient temperature Ta (C) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 28 30 32 34 Input voltage VIN (V) 36 38 0 -40 -20 0 20 40 60 80 100 120 140 160 Operating temperature Ta (C) 15 Dropper Type System Regulator ICs SI-3322S External Dimensions (unit: mm) Features High accuracy output of 5V30mV Memory backup power supply 4V0.2V Power on reset function Supply voltage monitor function Watch dog timer CR not required for setting external time constant Index area SI-3322S Lot SKA 7.40 10.00 7.60 10.65 Lot 1 2 3 0.25 * 45 0.75 Adhesive surface 10.10 10.50 0.23 0.32 2.35 2.65 Absolute Maximum Ratings Parameter Symbol 0.33 0.51 Applicable terminals BAI, VCC, VNMIC VIN (1) Ratings Unit -0.3 to 32 V -0.3 to 7 V 0.10 0.30 1.27 BSC Conditions 0.40 1.27 0 to 8 Coplanarity (height difference among leads) 0.1mm max. VS, NMIC, RSTTC, OUTE Terminal voltage VSC, NMI, RESET, OUTE VIN (2) W/D, STBY Standard Connection Diagram Storage temperature Tstg -- -40 to +125 C Operating temperature Top -- -40 to +105 C PD -- 1.4 W Power dissipation + IG. SW + 47F R2 (Ta = 25C unless otherwise specified) Parameter Symbol min typ max Unit VSC 3.8 4 4.2 V BAI = 4.2 to 16V, ISC = -0.2mA VS 4.97 5 5.03 V VCC = 5.2 to 16V, IO = -350mA VS -VSC voltage difference VS 0.3 V BAI input current I BAI 0.6 mA VCC input current I CC 5 mA VCC = 3 to 16V VB input current IB 25 mA VCC = 3 to 16V VCC = 5.2V, ISC = -50mA BAI = 4.9 to 16V, ISC = -0.2mA 20 mA VCC = BAI = 3 to 16V, ISC = 0mA NMIC input current I NMIC -0.04 -0.1 -0.4 mA VCC = BAI = 14V W/D input current I W/D -0.04 -0.1 -0.4 mA VCC = BAI = 14V RSTTC input current I RTC -0.04 -0.1 -0.4 mA Lo VNIL 4.9 5 5.1 V Hysteresis VN 0.12 0.3 V NMI judge voltage Hi VNOH Lo VNOL Hi VSOH VSOL VROH Lo VROL Hi VUOH Lo VUOL Hi VTOH Lo VTOL VNMIC VCC 1 BAI + VB VS VSC VS-0.5 0.6 SI-3322S VS-0.5 0.6 VS-0.5 STBY R1, R2: NMI judge voltage (5V typ) variable resistor NMI judge voltage (R1 + R2) * 2.5V/R2 R1, R2 2k Normally, VNMIC terminal is open. Isource = -1mA Isink = 0.5mA V Isource = -1mA V Isink = 0.5mA V Isource = -1mA V Isink = 0.5mA VS-0.5 V Isource = -1mA V Isink = 0.5mA STBY 12 RESET RSTTC: Normally open. GND connected when TRE is to be halved. + + + VNMIC 6 VCC 5 VB VSC VS 4 3 2 - + Current limit circuit Main regulator BAI 1 9 NMI - + - + NMI judge circuit Backup regulator Reference oscillation circuit RESET output voltage 0.6 Microcomputer Circuit Block Diagram Start circuit V AVCC NMI 15 RESET GND VCC = BAI = 14V V VCC 9 NMI Logic circuit STBY output voltage Hi 2 NMIC OUTE OUTE W/D RSTTC W/D NMI Control GND 13 11 10 16 14 OPEN or GND NMIC = 0V NMI output voltage Lo 3 Conditions VSC output voltage IS 4 8 VS output voltage VS input current 5 47F BATT Ratings + 68F 120 6 Electrical Characteristics A/D converter, I/O circuit, etc. 47F R1 Ta = 25C OUTE control circuit GND 8 Counter Frequency comparator STBY control circuit 15 STBY RESET control circuit 12 RESET OUTE output voltage 0.6 VS-0.5 V Isource = -1mA 0.6 V Isink = 0.5mA 13 NMIC 11 OUTE 10 OUTE 16 W/D 14 RSTTC OUTE output voltage TST 5 10 20 ms Reset release time TRE 60 75 90 ms Reset cycle TRC 40 50 60 ms Reset period TRP 20 25 30 ms W/D signal stop detect period TWS 10 12.5 15 ms Standby release time Reset signal output time TNR 80 Standby signal output time TRS 10 W/D fail judge frequency FFH 2 Out enable release time TWE 40 s s 50 Notes: The direction of current flowing into the IC is positive (+). 5 kHz 10 ms Timing Chart VCC VS (BAI=14V) VSC 0V 0V NMI STBY TRS TST TRP TRE TNR RESET OUTE TWS TRC TWE OUTE W/D HI or Lo Power on 16 VNIL VNIL+VN W/D input stop W/D input start (microcomputer (microcomputer resets) runaway) Power off Dropper Type System Regulator ICs SI-3322S Electrical Characteristics VS Line Regulation VS Load Regulation VS Rise Characteristics 5.03 5.03 6 5.02 5.02 5 5.01 4 VS (V) VS (V) IO = 0A 5 4.99 5 4.99 0.4A 4.98 4.97 VS (V) IO = 0A 5.01 5 10 15 20 12V 1 VCC = 5.2V 4.97 25 0.4A 2 4.98 0 3 0 0.2 0.4 VCC (V) 0.6 0.8 1.0 1.2 0 0 1.4 2 4 VS Overcurrent Protection Characteristics VCC Input Current 6 6 8 10 VCC (V) IO (A) VB Input Current 5 20 No load 5 4 15 3 VCC = 7V 3 I B (mA) ICC (mA) VS (V) 4 2 10 2 12V 5 1 1 0 0 0.5 1 1.5 0 2 0 5 10 IO (A) 15 0 20 0 5 VCC (V) VS Input Current VSC Rise Characteristics 15 20 VSC Overcurrent Protection Characteristics 5 20 10 VCC (V) 6 No load 5 4 15 10 VSC (V) VSC (V) IS (mA) 4 3 2 3 2 5 1 0 0 5 10 15 0 20 1 0 5 10 VCC (V) 15 0 20 0 2 BAI (V) BAI Input Current 6 8 10 ISC (A) VS-VSC Voltage Difference NMI Judge Voltage Characteristics 500 500 4 6 No load 5 400 400 200 300 NMI (V) VS (mV) IBAI (A) 4 300 200 3 2 100 100 0 0 0 5 10 BAI (V) 15 20 1 0 20 40 60 ISC (mA) 80 100 120 0 4.5 4.7 4.9 5.1 5.3 5.5 VCC (V) 17 Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004 External Dimensions (unit: mm) Features Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A) Power on reset function Watchdog timer Built-in drooping type overcurrent and thermal protection circuits (ch1) DC input voltage VIN Output control terminal voltage EN Output current -0.3 to 35 0.4 0.2 W/D/C TC terminal input voltage TC CK terminal input voltage CK Vo1-fail terminal output voltage Vo1-fail Reset terminal output voltage RESET +0.2 2.0 -0.8 1 Reverse connection 1 min max. 8 +0.15 1.270.25 400mS V 40 Io2 Remarks V 40 Io1 W/D/C terminal input voltage Unit -13 to 35 CH2 MODE Fin thickness (Ta=25C) Ratings CH1 MODE terminal input voltage 1.0 -0.05 9 0.4 - 0.05 2.50.2 Symbol +0.1 10.50.2 16 7.50.2 Absolute Maximum Ratings Parameter 12.20.2 400mS +0.15 0.25- 0.05 A -0.3 to 7 V C Standard Connection Diagram Junction temperature Tj -40 to 150 Storage temperature Tstg -40 to 150 C Thermal resistance (junction to case) j-c 4.1 C/W With infinite heatsink Thermal resistance (junction to ambient air) j-a 38 C/W With glass epoxy + copper foil board (size 5.0 x 7.4cm; t: glass epoxy = 1.6mm/copper foil = 18m) D1 Vo1 Vin EN Vo1 SPF3004 Cin Vo1 fail MODE + + Co1 Vo2 Load Battery Parameter Output voltage Dropout voltage Ripple rejection min max 5.00 5.10 CH1 Vo1 4.85 5.00 5.15 CH2 Vo2 3.15 3.30 3.45 VIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = -40 to 125C VIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = -40 to 150C VIN = Vo2+VDIF1+VDIF2 to 18V, Io1 = 0 to 0.2A CH1 CH1 CH2 CH1 CH2 VDIF11 VDIF12 VDIF2 RREJ1 RREJ2 0.5 0.25 0.5 Io1 = 0.4A Io1 = 0.2A, Tj = 25C Io2 = 0.2A Iq Overcurrent protection CH1 starting current CH2 CH1 Residual current at a short CH2 EN output control voltage VENth ON OFF Vo1-fail terminal LOW voltage Vo1-fail terminal HI voltage Reset terminal LOW voltage Reset terminal HI voltage CH1 Reset detect voltage CH2 0.402 0.201 0.402 0.201 1.0 0.9 50 250 10 100 1.80 0.80 1.80 0.80 3.5 3.5 50 30 1.0 0.5 IENH1 IENH2 -1.0 IENL Vfail L Vfail H Vo1-0.8V * 5 0.5 VRSL VRSH Vo1-0.8V * 5 Vo1thH Vo1 * 0.97 Vo1thL 4.05 Vo2thH Vo2 * 0.985 Vo2thL 3.00 Vo1th 0.255 Vo2th 0.105 tdly 0.70 * Rtc * Ctc 0.72 * Rtc * Ctc 0.74 * Rtc * Ctc 0.52 * Rtc * Ctc 0.54 * Rtc * Ctc 0.56 * Rtc * Ctc twd 0.04 * Rtc * Ctc 0.06 * Rtc * Ctc 0.08 * Rtc * Ctc twdp Vmodeth 1.0 3.0 ImodeH 200 ImodeL 1.0 -1.0 Vw/d/cth 3.0 1.0 Iw/d/cH 200 Iw/d/cL 1.0 -1.0 Vckth 3.0 1.0 IckH 200 IckL 1.0 -1.0 V V V db f = 100 to 200Hz A VIN = 16V, EN = 0V VIN = 35V, EN = 0V mA mA A A V A V V V V V V V V V V S S S V Io1 = Io2 = 0.2A Vo1 = 4.5V Vo2 = 2.8V Vo1 = 0V Vo2 = 0V Tj = -40 to 125C Rtc Load + + Co2 Ctc Cin: Capacitor (39F) for oscillation prevention CO1: Output capacitor (39F) CO2: Output capacitor (39F) Tantalum capacitors are recommended especially for low temperatures. D1, D2: Protection diodes. Required as protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z). Timing Chart *8 EN = 6.4V, Tj = -40 to 125C EN = 3.51V, Tj = -40 to 125C EN = 0V, Tj = -40 to 125C Isink = 250A, (Pull-up resistance 20k typ) Isource = 15A Isink = 250A, (Pull-up resistance 20k typ) Isource = 15A Vrs, Vfail 4.5V Vrs, Vfail 0.8V Vrs 3.0V Vrs 0.8V Vo1th = Vo1thH-Vo1thL Vo2th = Vo2thH-Vo2thL Min. set time: 6mS Min. set time: 4mS Min. set time: 400S CH1 CH2 Power on reset delay time W/D time W/D pulse time MODE terminal control voltage MODE = 5V ON MODE terminal A control current MODE = 0V, Tj = -40 to 125C OFF V W/D/C terminal control voltage *7 W/D/C = 5V ON W/D/C terminal A control current W/D/C = 0V, Tj = -40 to 125C OFF V Min. clock pulse time = 5S (Duty 50%) CK terminal control voltage CK = 5V ON CK terminal control A current CK = 0V, Tj = -40 to 125C OFF Notes: *3: Refer to dropout voltage. *4: Since PD (max) = {(VIN-VO1) * (IO1+ IO2)} + (VIN * Iq) + {(VO1-VO2) * IO2 } = 30W, VIN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155 C (min.) and 165C (typ). These values represent the design warranty. *7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur. *8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150C is 16mS (0.32V/mS) max. Reset detect voltage hysteresis width TC Conditions 4.90 IGND Is11 Is21 Is21 Is22 35 * 4 Unit Vo1+VDIF1 * 3 54 54 10 50 5 70 CK D2 Ratings typ VIN GND current 18 Symbol Vo1 Quiescent circuit current EN output control current W/D/C CH1 Input voltage RESET GND Electrical Characteristics Vin EN (ON) operation EN EN (OFF) operation OCP operation Vo1thH Vo1thL Vo1 Reset operation Vo1 fail (Vo1 pull-up) OCP operation Reset operation Vo2 Vo2thL Vo2thH MODE (Vo1 system connection) Vmodeth Vo1 pull-up status Open status TC (3.3 pull-up) RESET W/D/C tdly tdly twd (Vo1 system connection) tdly-twdp twdp Open status CK W/D Stop period Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004 Electrical Characteristics Rise Characteristics of Output Voltage Line Regulation (V01) Line Regulation (V02) 6 IO2=0A 0.2A 2 3.50 Output voltage VO2 (V) IO1=0A 0.4A 4 Output voltage VO1 (V) Output voltage VO1, VO2 (V) 5.10 5.00 IO1=0A 0.2A 0.4A 0 2 4 6 8 10 IO2 =0A 0.1A 0.2A 3.30 4.90 0 3.40 0 Input voltage V IN (V) 10 20 30 40 0 10 Load Regulation (V01) 20 30 40 Input voltage VIN (V) Input voltage VIN (V) Load Regulation (V02) Dropout Voltage (V01) 1.0 3.40 VIN =6V 10V 14V 18V 0.5 3.30 4.90 0 Dropout voltage VIN =6V 10V 14V 18V Output voltage VO2 (V) Output voltage VO1 (V) 5.00 Vdif1 (V) 3.50 5.10 0 0.1 0.2 0.3 0 0.4 0 Output current IO1 (A) 0.05 0.10 0.15 0 0.20 0 0.2 Output current IO2 (A) GND Current 0.4 0.6 Output current IO1 (A) Overcurrent Protection Characteristics (V01) Overcurrent Protection Characteristics (V02) 6 IO1=0.4A 20 IO1=0.2A IO1=0A 0 10 20 30 4 VIN =6V 10V 14V 18V 2 0 40 Output voltage VO2 (V) 4 Output voltage VO1 (V) GND current IGND (mA) 40 0 Input voltage VIN (V) 0.5 0 1.0 0 0.2 0.4 0.6 Output current IO2 (A) EN Terminal Output Voltage Ta--PD Characteristics 6 6 IO1=5mA 4 2 4 2 0 120 140 160 180 Ambient temperature Ta (C) 200 Power dissipation PD (W) 40 Output voltage VO1 (V) Output voltage VO1 (V) 2 Output current IO1 (A) Thermal Protection Characteristics 100 VIN =6V 10V 14V 18V 1 2 3 EN terminal voltage VEN (V) 4 30 Infinite heatsink equivalent (Tc=25C) 20 10 Copper foil area (5.0*7.4mm, t=1m) 0 -40 0 25 50 85 125 150 Operating temperature Ta (C) 19 Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006 External Dimensions (unit: mm) Features Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A) Power on reset function Watchdog timer Built-in drooping type overcurrent and thermal protection circuits (ch1) 12.20.2 (Ta=25C) Ratings Unit Remarks -13 to 35 V Reverse connection 1 min max. Vo1, Vo2 output control terminal voltage EN -0.3 to 35 V Vo2 output control terminal voltage VC -0.3 to 35 V CH1 Io1 0.4 CH2 Io2 0.2 TC terminal input voltage 8 +0.15 1.270.25 0.4 -0.05 2.50.2 VIN2 Output current +0.2 1 VIN1 DC input voltage Fin thickness 2.0 - 0.8 Symbol 1.0 -0.05 9 7.50.2 Absolute Maximum Ratings Parameter +0.1 10.50.2 16 +0.15 0.25-0.05 A TC CK terminal input voltage CK -0.3 to 7 W/D/C terminal input voltage W/D/C Reset terminal output voltage RESET Standard Connection Diagram P D1 Power dissipation 18.6 P D2 2.97 Tj -40 to 150 Junction temperature V W With an infinite heatsink mounted. D1 *1 Vin1 C EN Vin2 Operating temperature Top -40 to 105 C Storage temperature Thermal resistance (junction to case) Tstg -40 to 150 C j-c 6.7 C/W With an infinite heatsink mounted. C/W *1 Thermal resistance (junction to ambient air) 42 j-a Battery Cin - Vc Vo1 3Pin 4Pin 2Pin 14Pin 6Pin SFP3006 7Pin 5Pin 1,9, 12,13Pin GND RESET Rtc Co1 Vo2 8Pin 10Pin 11Pin Tc W/D/C CK - Load Ctc D2 Notes: *1: With glass epoxy + copper foil board (size 5.0 * 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18m) * The regulator IC may be used only with Vo1 (single output power supply) by selecting NC (open) for 5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2. Load Co2 Electrical Characteristics Parameter Symbol Input voltage Output voltage Dropout voltage Ripple rejection max 35 CH1 Vo1 4.85 5.00 5.15 CH2 Vo2 4.85 5.00 5.15 CH1 VDIF1 0.5 CH2 VDIF2 0.5 CH1 RREJ1 54 CH2 RREJ2 54 Iq IGND 5 10 mA 70 100 mA Is21 0.201 0.8 CH1 Is21 0.402 1.8 CH2 Is22 0.201 0.8 VENth 0.9 3.5 IENL Reset terminal LOW voltage VRSL Reset terminal HI voltage VRSH Reset detect voltage CH 50 -1.0 1.0 0.5 Vo1-0.8V Vo1thH Vo1* 0.97 VIN1 = 6 to 18V, Io = 0 to 0.3A A A f = 100 to 120Hz VIN1 = 16V, VEN = 0V VIN1 = 35V, VEN = 0V A (2 Pin) A V Isink = 250A (Pull-up resistance 20k typ) V Isource = 15A V Vrs 4.5V 0.8V 0.93 * Rtc * Ctc 1.03 * Rtc * Ctc 1.13 * Rtc * Ctc S Min. set time: 4mS 0.07 * Rtc * Ctc 0.13 * Rtc * Ctc 0.19 * Rtc * Ctc S Min. set time: 400S IckL -1.0 3.0 V A 1.0 Min. clock pulse time: 5s (Duty 50%) VCK = 5V VCK = 0V 1.0 IcH Vc output control current W/D/C terminal control voltage W/D/C terminal control current Vcth 3.5 V 300 A IcL -1.0 1.0 Vw/d/cth 1.0 3.0 V 200 A ON Iw/d/cH OFF Iw/d/cL -1.0 1.0 20 TC CK (8 Pin) (10 Pin) Timing Chart Vin1, Vin2 (+B) EN ENthL ENthH Vo1thH Vo1thL Vo Vc = 0V Vo2 VW/D/C = 5V RESET VW/D/C = 0V CK (Main power supply) TC Notes: *2: Refer to Dropout Voltage. *3: Since PD (max) = (VIN-VO1) * IO1+ (VIN2-VO2) * IO2 + (VIN * Iq) = 22W, VIN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151 C (min.) and 165C (typ). These values represent the design warranty. (11 Pin) (1,9,12,13 Pin) (BACK UP power supply) Vc = 5V W/D/C GND Vo1 Vc output control voltage Drive2 OCP2 *4 t wd 200 (7 Pin) (5 Pin) EN = 0V t wdp OFF (14 Pin) Vo2 Vc (Vo2: EN) Vc W/D pulse time 1.0 Err. D E T RESET (6 Pin) EN = 5V W/D time IckH Err. Vo1 RESET W/D Vin2 V Min. set time: 6mS Vckth Drive1 OCP1 D E T Vo2 = 0V Vrs ON EN TSD EN Vo1 = 0V V CK terminal control current (4 Pin) (3 Pin) Vo2 = 4.5V S CK terminal control voltage Vo1 Vin1 Vo1 = 4.5V 1.18 * Rtc * Ctc 1.26 * Rtc * Ctc 1.35 * Rtc * Ctc 4.05 Circuit Block Diagram Io1 = Io2 = 0.2A t dly Vo1thL Power on reset delay time Cin: Capacitor (39F) for oscillation prevention CO1: Output capacitor (39F) CO2: Output capacitor (39F) Tantalum capacitors are recommended particularly for low temperatures (tantalum capacitors of about 0.47 F in parallel). D1, D2: Protection diodes. Required for protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z). V 50 CH2 Conditions * 2, 3 VIN2 = 6 to 18V, Io = 0 to 0.3A 250 1.8 OFF V 50 0.402 IENH V 10 Is11 ON Unit db CH1 EN output control voltage EN output control current Ratings typ Vo1+VDIF1 GND current Residual current at a short min VIN1, 2 Quiescent circuit current Overcurrent protection starting current - W/D/C tdly twd twdp W/D OFF mode Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006 Electrical Characteristics Rise Characteristics of Output Voltage (V01) Rise Characteristics of Output Voltage (V02) IO1=0A 0.2A 0.4A 2 5.10 4 IO2 =0A 0.2A 0.4A 2 0 0 2 4 6 8 10 2 4 6 8 0 5.05 5.05 5.05 5.00 IO1=0A 0.1A 0.2A 4.95 4.90 15 20 25 5.00 VIN =6V 10V 14V 18V 4.95 4.90 30 Output voltage VO2 (V) 5.10 10 10 0 0.1 Input voltage VIN (V) 0.2 0.3 0 0.05 0.10 0.15 0.20 Overcurrent Protection Characteristics (V01) 6 Output voltage VO1 (V) Vdif2 (V) Dropout voltage 0.2 30 Output current IO2 (A) 0.6 0.4 25 VIN =6V 10V 14V 18V 4.95 4.90 0.4 Dropout Voltage (V02) 0.6 20 5.00 Output current IO1 (A) Dropout Voltage (V01) 15 Load Regulation (V02) 5.10 5 5 Input voltage VIN (V) 5.10 0 IO1=0A 0.2A 0.4A 4.95 10 Load Regulation (V01) Output voltage VO1 (V) Output voltage VO2 (V) 5.00 Input voltage VIN (V) Line Regulation (V02) Vdif1 (V) 5.05 4.90 0 Input voltage V IN (V) Dropout voltage Output voltage VO1 (V) 4 0 Line Regulation (V01) 6 Output voltage VO2 (V) Output voltage VO1 (V) 6 0.4 Ta=150C 25C -40C 0.2 4 VIN =6V 10V 14V 18V 2 Ta=150C 25C -40C 0 0 0.2 0 0.4 0 0.1 Output current IO1 (A) 0 0.2 0 Output current IO2 (A) Overcurrent Protection Characteristics (V02) 0 0 0.2 0.4 Output current IO2 (A) 0.6 Power dissipation PD (W) Output voltage VO1 (V) Output voltage VO2 (V) 16 2 0.8 20 IO1=5mA VIN =6V 10V 14V 18V 0.6 Ta--PD Characteristics 6 4 0.4 Output current IO1 (A) Thermal Protection Characteristics 6 0.2 4 2 0 100 125 150 175 Ambient temperature Ta (C) 200 Infinite heatsink equivalent (Tc=25C) 12 8 4 0 -50 Copper foil area (5.0*7.4mm, t=18m) 0 50 100 150 Operating temperature Ta (C) 21 Switching Type Regulator ICs SI-3201S External Dimensions (unit: mm) Features Output current of 3A (Ta = 25C, VIN = 8 to 18V) High efficiency of 82% (VIN = 14V, I O = 2A) Requires 5 external components only Built-in reference oscillator (60kHz) Phase internally corrected Output voltage internally corrected Built-in overcurrent and thermal protection circuits Built-in soft start circuit 3.2 0.2 4.2 0.2 2.8 0.2 (17.9) 16.9 0.3 7.9 0.2 4.0 0.2 0.5 10.0 0.2 a 2.6 0.1 5.0 0.6 (2.0) b 0.95 0.15 Symbol Ratings Unit +0.2 Input voltage VIN 35 V Output voltage IO 3 A 0.85 -0.1 Conditions (8.0) Parameter (Ta=25C) (4.6) Absolute Maximum Ratings +0.2 -0.1 0.45 SWOUT terminal voltage VSWOUT -1 V PD1 22 W 1.8 W Tj -40 to +150 C Storage temperature Tstg -40 to +125 C Junction to case thermal resistance j-c 5.5 C/W Junction to ambient-air thermal resistance j-a 66.7 C/W Output current Operating temperature 3 4 5 a: Part No. b: Lot No. (Forming No. 1101) Standard Circuit Diagram VIN SI-3201S 1 VIN VIN typ max 18 8 Unit Conditions IO 0.5 3 A Top -40 +85 C e f C1 V D1 + g + 5 SS h C3 Ta--PD characteristics VO SWOUT b d L1 2 SW Tr a c Ratings Symbol min Input voltage 2 Stand-alone Recommended Operating Conditions Parameter 1. VIN 2. SWOUT 3. GND 4. VS 5. SS With infinite heatsink 1 PD2 (4.3) 8.2 0.7 Power Dissipation Junction temperature 3.9 0.7 P1.7 0.7 *4 = 6.8 0.7 GND VS C2 4 i 3 GND Electrical Characteristics Parameter Output voltage (VIN = 14V, I OUT = 2A, Tj = 25C unless otherwise specified) Ratings Symbol min typ max 4.80 5.00 Unit Conditions 5.20 V Line regulation VO LINE 100 mV VIN = 8 to 18V Load regulation VO LOAD 50 mV IO = 0.5 to 3A VO Efficiency *1 Oscillation frequency 82 f OSC Quiescent circuit current Iq Overcurrent protection starting current IS Soft *3 start terminal Low level voltage VSSL Source current when low I SSL Discharge resistance RDIS 50 % 60 70 kHz 5 10 mA 3.1 15 A 25 200 IO = 0A *2 0.2 V 35 A VSSL = 0.2V k VIN = 0V Notes: *1. Efficiency is calculated by the following equation: VO * I O = * 100 (%) VIN * I IN *2. A dropping-type overcurrent protection circuit is built in the IC. *3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open when not using it since it is already pulled up in the IC. GND C1: 1000F C2: 1000F L 1: 250H D1: RK46 (Sanken) a: Internal power supply b: Thermal protection c: Reference oscillator d: Reset e: Latch & driver f : Comparator g: Overcurrent protection h: Error amplifier i : Reference voltage Cautions: (1) A high-ripple current flows through C1 and C2. Use high-ripple type 1000F or higher capacitors with low internal resistance. Refer to the respective data books for more information on reliability and electrical characteristics of the capacitor. (2) C3 is a capacitor used for soft start. (3) L1 should be a choke coil with a low core loss for switching power supplies. (4) Use a Schottky barrier diode for D1 and make sure that the reverse voltage applied to the 2nd terminal (SWOUT terminal) is within the maximum ratings (-1V). If you use a fast-recovery diode, the recovery voltage and the ON forward voltage may cause a reversed-bias voltage exceeding the maximum ratings to be applied to the 2nd terminal (SWOUT terminal). Applying a reversed-bias voltage exceeding the maximum rating to the 2nd terminal (SWOUT terminal) may damage the IC. (5) The 4th terminal (VS) is an output voltage detection terminal. Since this terminal has a high impedance, connect it to the positive (+) terminal of C2 via the shortest possible route. (6) Leave the 5th terminal (soft start terminal) open when not using it. It is pulled up internally. (7) To ensure optimum operating environment, connect the highfrequency current line with minimum wiring length. SI-3201S 5 SS C3 22 SI-3201S 5 SS SI-3201S 5 SS C3 Switching Type Regulator ICs SI-3201S Electrical Characteristics Load Regulation 5.10 5.00 Output voltage VO (V) Io = 0A = 1A = 2A = 3A 4.95 4.90 6 5.10 5 5.05 5.00 VIN =18V = 10V = 7V 4.95 4.90 4.85 4.85 0 5 10 15 20 25 30 0 35 0.5 Input voltage VIN (V) 6 80 5 Output voltage VO (V) (%) Efficiency 1.0 1.5 2.0 2.5 V IN = 18V = 10V = 7V 60 50 40 1.5 0 2 2.0 2.5 3.0 Output current IO (A) 4 6 8 10 Overcurrent Protection Temperature Characteristics 6 5 VIN =18V = 10V = 7V 4 3 2 4 TC = +100, 25, --20C 3 2 1 0 0 1.0 2 Input voltage VIN (V) 1 0.5 3 0 3.0 Overcurrent Protection Characteristics 90 0 4 Output current IO (A) Efficiency Curve 70 Io = 0A = 1A = 2A = 3A 1 Output voltage VO (V) Output voltage VO (V) 5.05 Rise Characteristics 5.15 Output voltage VO (V) Line Regulation 0 1.0 2.0 3.0 Output current IO (A) 4.0 5.0 0 1.0 2.0 3.0 4.0 5.0 Output current IO (A) Ta --PD Characteristics 25 With silicone grease Heatsink: aluminum Power Dissipation PD (W) With infinite heatsink 20 15 10 5 0 -40 0 40 80 120 160 Operating temperature Ta (C) 23 High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04 External Dimensions (unit: mm) Features 1.0 0.3 Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Surface-mount full-mold package 0.89 0.15 2.54 0.25 0.25 +0.15 0.75 -0.05 +0.15 a b Pin 1 Power supply voltage VB -13 to +40 V Drive terminal applied voltage VD -0.3 to VB V Input terminal voltage VIN -0.3 to +7.0 V DIAG output applied voltage VDIAG -0.3 to +7.0 V DIAG output source current IDIAG 3 mA Voltage across power supply and drive terminal VB-D VB -0.4 V Output current IO 1.5 A Power dissipation PD 2.6 W Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C 19.56 0.2 Conditions 3.6 0.2 Unit 1.4 0.2 Ratings 8 20.0max (Ta=25C) Symbol 4.0max Parameter 9 6.8max 6.3 0.2 8.0 0.5 0 to 0.15 9.8 0.3 3.0 0.2 16 0.3 -0.05 Absolute Maximum Ratings SMD-16A a: Part No. b: Lot No. Equivalent Circuit Diagram Without heatsink, all circuits operating The MIC is bound by the dotted lines. 9,12,16 IN1 * 2 Drive CONT. 11k typ. DIAG1 3 O.C.P DIAG DET. Electrical Characteristics VB 2 Pre. Reg. (VBopr =14V, Ta=25C unless otherwise specified) 1,15 14 T.S.D Out1 2 * D1 1 * Ratings Parameter Symbol Operating power supply voltage VBopr min typ max 16 6.0 Unit Conditions IN2 DIAG2 Quiescent circuit current Iq Threshold input voltage VINth 5 0.8 I IN Hi output 12 mA 3.0 V 1.0 mA Input current A V Output terminal sink current IO (off) 2.0 mA Saturation voltage of DIAG output VDL 0.3 V IDIAG = 3mA 100 A VDIAG = 5V 30 k IDGH Open load detection resistor Ropen 1 IS 1.6 Overcurrent protection starting current VIN = 0V IO 1.0A, VBopr = 6 to 16V VO = 0V, VIN = 0V A VO = VBopr -1.9V TON 8 30 s IO = 1A TOFF 15 30 s IO = 1A TPLH 10 30 s IO = 1A TPHL 15 30 s IO = 1A Output transfer time DIAG output transfer time Out2 *2 D2 1 * *2 VIN = 5V 0.5 Leak current of DIAG output 8,10 11 100 0 O.C.P DIAG DET. 4,5,13 VCE (sat) I IN Drive CONT. 6 Lo output Saturation voltage of output transistor Lo output 7 11k typ. V GND [Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection *1. The base terminal (D terminal) is connected to the output transistor base. It is also connected to the control monolithic IC. Do not, therefore, apply an external voltage in operation. *2. SDH04 have two or three terminals of the same function (VB, Out1, Out 2, GND). The terminals of the same function must be shorted at a pattern near the product. Standard Circuit Diagram VB PZ Note: * The rule of protection against reverse connection of power supply is VB = -13V, one minute (all terminals except, VB and GND, are open). D1 Out SDH04 IN Diagnostic Function VCC DIAG GND Load 5.1k VB 3.0V GND GND VIN 0.8V Truth table VIN VO VOUT SHORT Is OPEN OPEN OVER VOLTAGE H L L GND TSD Note 1: A pull-down resistor (11 k typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series. IO GND VDIAG Normal 24 H Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04 Electrical Characteristics Quiescent Circuit Current (dual circuit) Circuit Current (single circuit) VIN = 0V 20 50 20 IB (mA) 30 125C 20 VIN = 0V 10 VO shorted VO open 10 Ta = -40C 60 25C 40 125C 20 VIN = 0V 30 40 0 0 46 10 20 VB (V) Saturation Voltage of Output Transistor 30 40 0 0 46 20 30 40 46 VB (V) Overcurrent Protection Characteristics (Ta=-40C) Overcurrent Protection Characteristics (Ta=25C) 20 20 Ta = 125C VB = 16V VB = 6V 10 VB (V) 1.5 VB = 18V 15 VB = 18V 15 25C VO (V) 1.0 VO (V) VCE (sat) (V) 80 25C 10 0 0 VIN = 5V 100 Ta = -40C 40 IB (mA) Iq (mA) Ta = -40C 25C 125C Circuit Current (dual circuit) VIN = 5V 14V 10 14V 10 0.5 -40C 5 5 6V 6V 0 0 1 2 0 3 0 1 2 IO (A) 3 0 4 0 1 2 IO (A) Overcurrent Protection Characteristics (Ta=125C) Threshold Characteristics of Input Voltage Ta = 125C 4 Input Terminal Source Current VB = 14V IO = 1A 15 20 3 IO (A) 25C VB = 14V 1.0 -40C VB = 18V 0.8 15 IIN (mA) VO (V) VO (V) 10 14V 10 0.6 Ta = 125C 25C -40C 0.4 5 5 0.2 6V 0 0 1 3 2 0 4 0 1 IO (A) VIN (V) Input Terminal Sink Current 0 0 2 4 6 8 10 VIN (V) Saturation Voltage of DIAG Output VB = 14V VIN= 0V 1.0 3 2 0.3 VB = 14V IDIAG = 3mA VDL (V) IINL (A) 0.2 0.5 0.1 0 -50 0 50 Ta (C) 100 150 0 -50 0 50 100 150 Ta (C) 25 High-side Power Switch ICs [With Diagnostic Function] SI-5151S External Dimensions (unit: mm) Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply TO220 equivalent full-mold package not require insulation mica 4.2 0.2 3.2 0.2 10 0.2 16.9 0.3 4 0.2 7.9 0.2 2.8 0.2 20 max Features 2.6 0.1 a Symbol 0.94 0.15 (Ta=25C) Ratings Unit Power supply voltage VB 40 V Input terminal voltage VIN -0.3 to VB V DIAG terminal voltage VDIAG 6 V R-end Conditions +0.2 +0.2 0.45 -0.1 0.85 -0.1 P1.7 0.1 * 4 = 6.8 VCE 40 V IO 1.8 A PD1 18 W With infinite heatsink (Tc = 25C) PD2 1.5 W Stand-alone without heatsink (Tc = 25C) Junction temperature Tj -40 to +125 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +125 C Collector-emitter voltage Output current Power Dissipation 3.6 0.5 Parameter 2.9 -0.3 Absolute Maximum Ratings +0.2 b 4 0.6 1. GND 2. VIN 3. VO 4. DIAG 5. VB a: Part No. b: Lot No. (Forming No. 1123) Standard Circuit Diagram VB 5 Electrical Characteristics Symbol Operating power supply voltage VBopr Quiescent circuit current min VCE (sat) Output leak current IO, leak typ 6.0 Iq Saturation voltage of output transistor VO (Ta=25C unless otherwise specified) Ratings 5 max Unit SI-5151S Conditions VIN 2 30 V 12 mA 0.5 V 1.0 V 2 mA V VBopr = 6 to 16V VBopr = 6 to 16V LS-TTL or CMOS IO 1.0A, VBopr = 6 to 16V VCC DIAG 4 VBopr = 14V, VIN = 0V PZ 3 5.1k 1 Load Parameter IO 1.8A, VBopr = 6 to 16V VCEO = 16V Output ON VIH 2.0 VB Output OFF VIL -0.3 0.8 V Output ON I IH 1 mA VIN = 5V VIN = 0V GND Truth table VIN VO Input voltage H H L L Input current Output OFF I IL -0.1 mA Overcurrent protection starting current IS 1.9 A Thermal protection starting temperature TTSD 125 Open load detection resistor Ropen VBopr = 14V, VO = VBopr -1.5V Diagnostic Function C 145 30 k VBopr = 6 to 16V TON 8 30 s VBopr = 14V, IO = 1A TOFF 15 30 s VBopr = 14V, IO = 1A Output transfer time 6 V VCC = 6V VDL 0.3 V VCC = 6V, IDD = 2mA TPLH 30 s VBopr = 14V, IO = 1A TPHL 30 s VBopr = 14V, IO = 1A VDH 4.5 DIAG output voltage DIAG output transfer time Minimum load inductance L 1 Normal Shorted load Overheat Normal VIN VO DIAG mH VO VIN DIAG L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. Mode Note: * The rule of protection against reverse connection of power supply is VB = -13V, one minute (all terminals except, VB and GND, are open). 26 Open load Normal High-side Power Switch ICs [With Diagnostic Function] SI-5151S Electrical Characteristics Quiescent Circuit Current Circuit Current 10 Saturation Voltage of Output Transistor 1.0 40 Ta = --40C 30 25C --40C 20 VCE (sat) (V) 95C 5 IB (mA) Iq (mA) Ta = 25C Ta = 95C V B= 6 to 16V 95C 0.5 --40C 10 25C 0 0 10 20 30 0 40 0 0 10 20 VB (V) 50 0 14 14 VB = 14V 12 10 VO (V) VO (V) 8 8 8 6 6 6 4 4 4 2 2 2 0 0 0 1 2 0 0 3 1 IO (A) 2 0 3 2 3 IO (A) Input Current (Output ON) 20 Input Current (Output OFF) 2 1.0 15 1 IO (A) Threshold input voltage Ta = 95C VB = 14V 12 10 10 3 16 14 VB = 14V 2 Overcurrent Protection Characteristics (Ta=100C) 16 12 1 IO (A) Overcurrent Protection Characteristics (Ta=25C) 16 VO (V) 40 VB (V) Overcurrent Protection Characteristics (Ta= -40C) VIN = 0V VB = 14V VIN = 5V VB = 14V 25C -40C 10 IIL (A) VB = 16V I O = 1A IIH (mA) VO (V) 30 0.5 1 5 0 -40 0 0 1 2 2.2 0 50 VIN (V) Ta (C) Saturation Voltage of DIAG Output 0 50 100 Ta (C) 16 VB = 14V Vo 14 0.1 12 6 10 5 DIAG (V) VO (V) VDG (sat) (V) 0 -40 Thermal Protection Characteristics 0.2 8 6 0 -40 100 DIAG VB = 14V IO = 10mA 4 3 4 2 2 1 0 0 50 Ta (C) 100 0 50 100 150 Ta (C) 27 High-side Power Switch ICs [With Diagnostic Function] SI-5152S External Dimensions (unit: mm) Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed TO220 equivalent full-mold package not require insulation mica 4.2 0.2 3.2 0.2 10 0.2 16.9 0.3 4 0.2 7.9 0.2 2.8 0.2 20 max Features 2.6 0.1 a 2.9 -0.3 +0.2 b 0.94 0.15 Parameter R-end (Ta = 25C) Symbol Ratings Unit Power supply voltage VB 40 V Input terminal voltage VIN -0.3 to VB V DIAG terminal voltage VDIAG 6 V VCE 40 V Conditions +0.2 +0.2 0.45 -0.1 0.85 -0.1 Collector-emitter voltage Output current P1.7 0.1 * 4 = 6.8 4 0.6 1. GND 2. VIN 3. VO 4. DIAG 5. VB IO 1.8 A PD1 22 W With infinite heatsink (Tc=25C) PD2 1.8 W Stand-alone without heatsink Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C 3.6 0.5 Absolute Maximum Ratings a: Part No. b: Lot No. (Forming No. 1123) Power Dissipation Standard Circuit Diagram VB 5 VO (Ta=25C unless otherwise specified) SI-5152S Ratings Parameter Symbol Operating power supply voltage VBopr Quiescent circuit current min 6.0 Iq Saturation voltage of output transistor VCE (sat) Output leak current IO, leak typ 5 max Unit 30 V 12 mA 0.5 V 1.0 V 2 mA Conditions VIN 2 VCC DIAG 4 VBopr = 14V, VIN = 0V PZ 3 LS-TTL or CMOS 5.1k Load Electrical Characteristics 1 IO 1.0A, VBopr = 6 to 16V IO 1.8A, VBopr = 6 to 16V Output ON VIH 2.0 VB V VBopr = 6 to 16V Output OFF VIL -0.3 0.8 V VBopr = 6 to 16V Output ON I IH 1 mA VIN = 5V VIN = 0V GND Truth table VO VCEO = 16V, VIN = 0V VIN Input voltage H H L L Input current Output OFF I IL -0.1 mA Overcurrent protection starting current IS 1.9 A VBopr = 14V, VO = VBopr -1.5V Thermal protection starting temperature TTSD 150 C VBopr 6V k VBopr = 6 to 16V Open load detection resistor Normal Ropen 30 TON 8 30 s VBopr = 14V, IO = 1A TOFF 15 30 s VBopr = 14V, IO = 1A IDIAG 100 A VCC = 6V, VBopr = 6 to 16V VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA TPLH 30 s VBopr = 14V, IO = 1A s VBopr = 14V, IO = 1A Output transfer time DIAG output leak current Saturation voltage of DIAG output DIAG output transfer time TPHL Minimum load inductance Diagnostic Function L 30 1 mH Open load Overheat Normal VO DIAG Mode Normal Note: * The rule of protection against reverse connection of power supply is VB = -13V, one minute (all terminals except, VB and GND, are open). Shorted load VIN Open load Shorted load Overheat VIN L H L H L H L H VO L H H H L L L L DIAG L H H H L L L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. 28 High-side Power Switch ICs [With Diagnostic Function] SI-5152S Electrical Characteristics Quiescent Circuit Current Circuit Current 10 Saturation Voltage of Output Transistor 1.0 40 Ta = -40C 30 -40C 95C 5 25C 20 VCE (sat) (V) IB (mA) Iq (mA) Ta = 25C Ta = 95C VB = 6 to 16V 95C 0.5 -40C 10 25C 0 0 10 20 30 0 40 0 0 10 20 VB (V) Overcurrent Protection Characteristics (Ta = -40C) 0 16 16 14 14 VB = 14V 12 VO (V) VO (V) 10 8 8 6 6 6 4 4 4 2 2 2 0 0 0 2 0 0 3 1 IO (A) 2 0 3 3 Input Current (Output OFF) 2 1.0 15 2 IO (A) Input Current (Output ON) 20 Ta = 95C 1 IO (A) Threshold input voltage 3 VB = 14V 12 10 1 2 Overcurrent Protection Characteristics (Ta=100C) VB = 14V 8 1 Overcurrent Protection Characteristics (Ta=25C) 10 VO (V) 50 IO (A) 14 VIN = 0V VB = 14V VIN = 5V VB = 14V 25C -40C 10 IIL (A) VB = 16V IO = 1A IIH (mA) VO (V) 40 VB (V) 16 12 30 0.5 1 5 0 0 1 2 2.2 VIN (V) 0 -40 0 50 Ta (C) 100 0 -40 0 50 100 Ta (C) Saturation Voltage of DIAG Output 0.2 VDL (V) VB = 14V 0.1 0 -40 0 50 100 Ta (C) 29 High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S External Dimensions (unit: mm) Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica 4.2 0.2 3.2 0.2 10 0.2 16.9 0.3 4 0.2 7.9 0.2 2.8 0.2 2.6 0.1 a 2.9 -0.3 +0.2 b 20 max Features 0.94 0.15 R-end Parameter (Ta=25C) Symbol Ratings Unit VB -13 to +40 V Input terminal voltage VIN -0.3 to VB V DIAG terminal voltage VDIAG 6 V VCE VB --VZ V IO 2.04 A PD1 22 W With infinite heatsink (Tc=25C) PD2 1.8 W Stand-alone without heatsink Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C Power supply voltage Collector-emitter voltage Output current +0.2 +0.2 0.45 -0.1 0.85 -0.1 Conditions P1.7 0.1 * 4 = 6.8 4 0.6 1. GND 2. VIN 3. VO 4. DIAG 5. VB Refer to "Surge clamp voltage" in Electrical Characteristics 3.6 0.5 Absolute Maximum Ratings a: Part No. b: Lot No. (Forming No. 1123) Power Dissipation Junction temperature Standard Circuit Diagram VB 5 VO SI-5153S (Ta=25C unless otherwise specified) VIN 2 Ratings Parameter Symbol Operating power supply voltage VBopr min 6.0 Iq Quiescent circuit current typ 5 max Unit 30 V 12 mA V Saturation voltage of output transistor VCE (sat) 0.47 Output leak current IO, leak 2 mA 4 Conditions LS-TTL or CMOS 5.1k 1 VBopr = 14V, VIN = 0V IO 2.05A, VBopr = 6 to 16V Output ON VIH 2.0 VB V VBopr = 6 to 16V Output OFF VIL -0.3 0.8 V VBopr = 6 to 16V Output ON I IH mA VIN = 5V Output OFF I IL -0.1 mA VIN = 0V Overcurrent protection starting current IS 2.05 A VBopr = 14V, VO = VBopr -1.5V Thermal protection starting temperature TTSD 150 C VBopr 6V 30 k VBopr = 6 to 16V GND Truth table VIN VO VCEO = 16V, VIN = 0V Input voltage 1 VCC DIAG Load Electrical Characteristics 3 H H L L Input current Open load detection resistor Diagnostic Function Normal Open load Shorted load Overheat Normal VIN Ropen TON 8 30 s VBopr = 14V, IO = 1A TOFF 15 30 s VBopr = 14V, IO = 1A 6 V VCC = 6V, VBopr = 6 to 16V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA Output transfer time VDH 4.5 VO DIAG DIAG output voltage VDL 0.3 V TPLH 30 s VBopr = 14V, IO = 1A TPHL 30 s VBopr = 14V, IO = 1A DIAG output transfer time Minimum load inductance Surge clamp voltage *1 L 1 VZ 28 mH 34 40 V IC = 5mA Note: *1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse). * The rule of protection against reverse connection of power supply is VB = -13V, one minute. * This driver is exclusively used for ON/OFF control. 30 VO VIN DIAG L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. Mode Normal High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S Electrical Characteristics Quiescent Circuit Current Circuit Current 10 Saturation Voltage of Output Transistor 2 50 40 Ta = -40C 5 25C VCE (sat) (V) IB (mA) Iq (mA) Ta = -40C 30 25C 20 150C Ta = 125C 1 VB = 6 to 16V 150C 25C 10 0 0 10 20 0 0 40 30 -40C 10 20 30 0 40 0 1 3 2 VB (V) VB (V) IO (A) Overcurrent Protection Characteristics (Ta=-40C) Overcurrent Protection Characteristics (Ta =25C) Overcurrent Protection Characteristics (Ta=125C) 20 20 20 VB = 18V VB = 18V VB = 18V 15 15 15 10 14V 10 8V 5 0 0 1 2 3 4 0 5 5 0 1 3 2 IO (A) 4 0 5 0 1 5 0.8 4 0.6 3 I IL (A) I IH (mA) 10 VB = 14V VIN = 0V VB = 14V VIN = 5V VB = 16V IO = 1A 5 Input Current (Output OFF) 1.0 Ta = 150C 25C -40C 4 IO (A) Input Current (Output ON) 20 3 2 IO (A) Threshold Characteristics of Input Voltage 15 10 8V 8V 5 VO (V) VO (V) VO (V) VO (V) 14V 14V 0.4 2 5 0.2 0 0 1 0 -50 2 1 0 VIN (th) (V) 50 100 0 -50 150 Output Terminal Leak Current VB = 14V VDIAG = 5V IO = 10mA 15 0.3 VO (V) VDL (V) IO leak (mA) 0.4 0.2 Ta (C) 100 150 0 -50 VO 10 VDIAG 5 0.1 50 150 20 VB = 14V IDIAG = 2mA 1 100 Thermal Protection Characteristics 0.5 VB = 14V 0 50 Ta (C) Saturation Voltage of DIAG Output 2 0 -50 0 Ta (C) 0 0 50 Ta (C) 100 150 0 50 100 150 200 Ta (C) 31 High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S External Dimensions (unit: mm) Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica 4.2 0.2 3.2 0.2 10 0.2 16.9 0.3 4 0.2 7.9 0.2 2.8 0.2 20 max Features 2.6 0.1 a 2.9 -0.3 +0.2 b 0.94 0.15 R-end Absolute Maximum Ratings Symbol Ratings Unit VB -13 to +40 V Input terminal voltage VIN -0.3 to VB V DIAG terminal voltage VDIAG 6 V VCE VB -VZ V IO 2.5 A PD1 22 W With infinite heatsink (Tc =25C) Stand-alone without heatsink Power supply voltage Collector-emitter voltage Output current +0.2 +0.2 Conditions 0.45 -0.1 0.85 -0.1 P1.7 0.1 * 4 = 6.8 4 0.6 1. GND 2. VIN 3. VO 4. DIAG 5. VB Refer to "Surge clamp voltage" in Electrical Characteristics 3.6 0.5 Parameter (Ta=25C) a: Part No. b: Lot No. (Forming No. 1123) Power Dissipation PD2 1.8 W Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C Standard Circuit Diagram VB 5 VO Electrical Characteristics SI-5154S (Ta=25C unless otherwise specified) VIN 2 Ratings Symbol Operating power supply voltage VBopr min 6.0 Iq Quiescent circuit current Saturation voltage of output transistor VCE (sat) Output leak current IO, leak Output ON VIH typ 5 2.0 max Unit Conditions 4 30 V 12 mA 0.3 V IO 1.0A, VBopr = 6 to 16V 0.72 V IO 2.5A, VBopr = 6 to 16V 2 mA VB V LS-TTL or CMOS VBopr = 14V, VIN = 0V 0.8 VBopr = 6 to 16V GND H H L L VBopr = 6 to 16V Output OFF VIL Output ON I IH mA VIN = 5V Output OFF I IL -0.1 mA VIN = 0V Overcurrent protection starting current IS 2.6 A VBopr = 14V, VO = VBopr -1.5V Thermal protection starting temperature TTSD 150 C VBopr 6V 30 k VBopr = 6 to 16V 1 V 5.1k 1 Truth table VIN VO VCEO = 16V, VIN = 0V Input voltage -0.3 VCC DIAG Load Parameter 3 Input current Open load detection resistor Ropen TON 8 30 s VBopr = 14V, IO = 1A TOFF 15 30 s VBopr = 14V, IO = 1A Output transfer time 6 V VCC = 6V, VBopr = 6 to 16V VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA TPLH 30 s VBopr = 14V, IO = 1A TPHL 30 s VBopr = 14V, IO = 1A VDH 4.5 DIAG output voltage DIAG output transfer time Minimum load inductance Surge clamp voltage *1 L 1 VZ 28 mH 34 40 V Normal Open load IC = 5mA Shorted load Overheat VIN VO DIAG Mode Normal Note: *1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse). * The rule of protection against reverse connection of power supply is VB = -13V, one minute. * This driver is exclusively used for ON/OFF control. 32 Diagnostic Function Open load Shorted load Overheat VIN L H L H L H L H VO L H H H L L L L DIAG L H H H L L L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. Normal High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S Electrical Characteristics Quiescent Circuit Current Circuit Current 2 Ta= -40C 25C 150C 5 40 Ta = -40C 30 25C 20 VCE (sat) (V) 50 IB (mA) Iq (mA) 10 Saturation Voltage of Output Transistor 150C Ta = 125C 1 25C VB = 6 to 16V 10 0 0 10 20 30 -40C 0 0 40 10 20 30 0 40 0 1 3 2 VB (V) VB (V) IO (A) Overcurrent Protection Characteristics (Ta= -40C) Overcurrent Protection Characteristics (Ta=25C) Overcurrent Protection Characteristics (Ta=125C) 20 20 20 VB = 18V 16 8 16 8 8V 4 1 3 2 4 8 8V 4 6V 4 0 5 0 1 2 IO (A) 3 4 0 5 6V 0 1 2 IO (A) Threshold input voltage I IH (mA) 10 VB = 14V VIN = 0V 0.8 4 0.6 3 I IL (A) 15 5 5 VB = 14V VIN = 5V Ta = 125C 25C -40C 4 Input Current (Output OFF) 1.0 VB = 16V IO = 1A 3 IO (A) Input Current (Output ON) 20 VO (V) 12 8V 6V 0 14V 14V 12 VO (V) 14V 12 VO (V) VO (V) 16 0 VB = 18V VB = 18V 0.4 2 5 0.2 0 0 1 0 -50 2 1 0 VIN (th) (V) 50 100 0 -50 150 Output Terminal Leak Current 0.3 0.2 Ta (C) 150 0 -50 VO 10 VDIAG 5 0.1 100 VB = 14V VDIAG = 5V IO = 10mA 15 VO (V) VDL (V) IO leak (mA) 0.4 50 150 20 VB = 14V IDIAG = 2mA 1 100 Thermal Protection Characteristics 0.5 VB = 14V 0 50 Ta (C) Saturation Voltage of DIAG Output 2 0 -50 0 Ta (C) 0 0 50 Ta (C) 100 150 0 50 100 150 200 Ta (C) 33 High-side Power Switch ICs [With Diagnostic Function] SI-5155S External Dimensions (unit: mm) Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed TO220 equivalent full-mold package not require insulation mica 4.2 0.2 3.2 0.2 10 0.2 16.9 0.3 4 0.2 7.9 0.2 2.8 0.2 20 max Features 2.6 0.1 a 2.9 -0.3 +0.2 b 0.94 0.15 Parameter R-end (Ta=25C) Symbol Ratings Unit Power supply voltage VB -13 to +40 V Input terminal voltage VIN -0.3 to VB V DIAG terminal voltage VDIAG 6 V VCE 40 V Conditions +0.2 +0.2 0.45 -0.1 0.85 -0.1 Collector-emitter voltage Output current P1.7 0.1 * 4 = 6.8 4 0.6 1. GND 2. VIN 3. VO 4. DIAG 5. VB IO 2.5 A PD1 22 W With infinite heatsink (Tc=25C) PD2 1.8 W Stand-alone without heatsink Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C 3.6 0.5 Absolute Maximum Ratings a: Part No. b: Lot No. (Forming No. 1123) Power dissipation Standard Circuit Diagram VB 5 VO (Ta=25C unless otherwise specified) SI-5155S Ratings Parameter Symbol Operating power supply voltage VBopr Quiescent circuit current min 6.0 Iq Saturation voltage of output transistor VCE (sat) Output leak current IO, leak typ 5 max Unit 30 V 12 mA 0.3 V 0.72 V 2 mA VIN 2 Conditions LS-TTL or CMOS VCC DIAG 4 VBopr = 14V, VIN = 0V PZ 3 5.1k 1 Load Electrical Characteristics IO 1.0A, VBopr = 6 to 16V IO 2.5A, VBopr = 6 to 16V Output ON VIH 2.0 VB V VBopr = 6 to 16V Output OFF VIL -0.3 0.8 V VBopr = 6 to 16V Output ON I IH 1 mA VIN = 5V Output OFF I IL -0.1 mA VIN = 0V IS 2.6 A VBopr = 14V, VO = VBopr -1.5V TTSD 150 C VBopr 6V k VBopr = 6 to 16V GND Truth table VIN VO VCEO = 16V, VIN = 0V Input voltage H H L L Input current Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Ropen 30 TON 8 30 s VBopr = 14V, IO = 1A TOFF 15 30 s VBopr = 14V, IO = 1A 6 V VCC = 6V, VBopr = 6 to 16V Output transfer time VDH 4.5 Diagnostic Function Normal Open load Shorted load Overheat VO L H H H L L L L DIAG Normal VIN VO DIAG output voltage VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA TPLH 30 s VBopr = 14V, IO = 1A s VBopr = 14V, IO = 1A DIAG output transfer time TPHL Minimum load inductance L 30 1 mH Note: * The rule of protection against reverse connection of power supply is VB = -13V, one minute (all terminals except, VB and GND, are open). DIAG Mode Normal Open load Shorted load Overheat VIN L H L H L H L H L H H H L L L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. 34 High-side Power Switch ICs [With Diagnostic Function] SI-5155S Electrical Characteristics Quiescent Circuit Current Circuit Current 2 Ta= -40C 25C 150C 5 40 Ta = -40C 30 25C 20 VCE (sat) (V) 50 IB (mA) Iq (mA) 10 Saturation Voltage of Output Transistor 150C Ta = 125C 1 25C VB = 6 to 16V 10 0 0 10 20 0 0 40 30 -40C 10 20 30 0 40 0 1 3 2 VB (V) VB (V) IO (A) Overcurrent Protection Characteristics (Ta= -40C) Overcurrent Protection Characteristics (Ta=25C) Overcurrent Protection Characteristics (Ta =125C) 20 20 20 VB = 18V 16 8 16 8 8V 4 1 3 2 4 8 8V 4 6V 6V 4 0 5 0 1 2 IO (A) 3 4 0 5 0 1 2 3 IO (A) Threshold input voltage 5 10 0.8 4 0.6 3 I IL (A) I IH (mA) VB = 16V IO = 1A VB = 14V VIN = 0V VB = 14V VIN = 5V 15 5 Input Current (Output OFF) 1.0 Ta = 125C 25C -40C 4 IO (A) Input Current (Output ON) 20 VO (V) 12 8V 6V 0 14V 14V 12 VO (V) 14V 12 VO (V) VO (V) 16 0 VB = 18V VB = 18V 0.4 2 5 0.2 0 0 1 0 -50 2 1 0 VIN (th) (V) 50 100 0 -50 150 Output Terminal Leak Current 0.3 0.2 Ta (C) 150 0 -50 VO 10 VDIAG 5 0.1 100 VB = 14V VDIAG = 5V IO = 10mA 15 VO (V) VDL (V) IO leak (mA) 0.4 50 150 20 VB = 14V IDIAG = 2mA 1 100 Thermal Protection Characteristics 0.5 VB = 14V 0 50 Ta (C) Saturation Voltage of DIAG Output 2 0 -50 0 Ta (C) 0 0 50 Ta (C) 100 150 0 50 100 150 200 Ta (C) 35 High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M External Dimensions (unit: mm) 31 0.2 Ellipse 3.2 0.15 * 3.8 4.8 0.2 24.4 0.2 1.7 0.1 16 0.2 9.9 0.2 3.2 0.15 12.9 0.2 Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.2V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit Built-in independent overcurrent and thermal protection circuit in each circuit Built-in protection against reverse connection of power supply Tj = 150C guaranteed a b 2.45 0.2 6.4 0.5 Features +0.2 +0.2 +0.2 1.15 -0.1 0.55 -0.1 0.65 -0.1 14 * P2.03 0.1 = (28.42) Absolute Maximum Ratings Parameter Power supply voltage (Ta=25C) Symbol Ratings Unit VB -13 to +40 V Drive terminal applied voltage VD -0.3 to VB V Input terminal voltage VIN -0.3 to +7.0 V DIAG output applied voltage VDIAG -0.3 to +7.0 V DIAG output source current IDIAG -3 mA Voltage across power supply and output terminal VB-O VB -34 V Voltage across power supply and drive terminal VB-D -0.4 V Conditions 31.3 0.2 a: Part No. b: Lot No. 1 23 Output current IO 1.5 A Output reverse current IO -1.8 A 15 Equivalent Circuit Diagram VB a Electrostatic resistance 250 ES/A V C = 200pF, R = 0 Stand-alone without heatsink, all circuits operating Power Dissipation PD 4.8 W Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +115 C Storage temperature Tstg -50 to +150 C Electrical Characteristics Symbol Operating power supply voltage VBopr Quiescent circuit current (per circuit) Circuit current (per circuit) MIC GND Unit 16 V Iq 0.8 1.6 mA Lo output IB 19.3 mA Tj = 25C VINth 0.8 VIN 3.7 Lo output VIN 3.0 VB V VCC V 1.5 I IN -1.0 Input current Lo output I IN VCE (sat) mA VCE (sat) 1.0 Output terminal sink current IO (off) 2.5 Surge clamp voltage VB-O 5 VIN = 5V V 5 mA Tj = 25C, VCEO = 14V V 34 39 V Tj = 25C, IC = 10mA 34 40 V IC = 5mA IDGH = -2mA, VBopr = 6 to 16V Saturation voltage of DIAG output VDL 0.4 V Leak current of DIAG output IDGH -100 A Open load detection resistor Ropen 5.5 k Overcurrent protection starting current IS 1.6 A VO = VBopr -1.5V C VBopr 6V 30 s IO = 1A 100 s IO = 1A TPLH 30 s IO = 1A s IO = 1A Maximum ON duty 100 Lo 1.0 D(ON) 0 mH 60 SLA2501M 4 FLT2 8 Diagnostic Function TON TPHL Minimum load inductance FLT1 IN2 VCC = 7V TOFF DIAG output transfer time 3 9 14 D1 D2 D3 FLT3 13 GND1 GND2 OUT1 OUT2 OUT3 6 11 2 10 15 IO 1.5A, VBopr = 6 to 16V 28 1 VB IN1 12 IN3 IO 1.2A, VBopr = 6 to 16V 29 TTSD 7 VIN = 0V 0.2 Output transfer time 36 V A 100 Saturation voltage of output transistor Thermal protection starting temperature e: Overcurrent protection circuit f: Diagnostic circuit g: Thermal protection circuit Standard Circuit Diagram Input voltage Hi output FLT a: Pre-regulator b: Overvoltage protection circuit c: Control circuit d: Driver circuit Conditions max Hi output Threshold input voltage OUT D typ 6.0 e g f (VBopr =14V, Tj= -40 to +150C unless otherwise specified) min d c Ratings Parameter b VIN % Note: * The Zener diode has an energy capability of 200 mJ (single pulse). * A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal. Normal VIN VO VDIAG Open load Shorted load Overheat Normal High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M Electrical Characteristics Quiescent Circuit Current (single circuit) Circuit Current (single circuit) 5 Saturation Voltage of Output Transistor 40 1.0 VIN = 5V VIN = 0V V IN = 5V V B = 6 to 16V Ta = -40C 2 Ta = 25C Ta =125C VCE (sat) (V) 3 Ta =150C 30 Ta = -40C Ta = 25C Ta = 125C IB (mA) Iq (mA) 4 20 Ta = 125C Ta = -40C 0.5 Ta = 25 C 10 1 0 0 10 20 30 0 40 0 10 20 30 0 40 0 1 2 3 3.5 VB (V) VB (V) IO (A) Overcurrent Protection Characteristics (Ta= -40C) Overcurrent Protection Characteristics (Ta=25C) Overcurrent Protection Characteristics (Ta=125C) 20 20 20 0 1 2 3 VO (V) 10 0 10 0 1 2 I OUT = 1A 2 0 2 3 4 Input Current (Output OFF) 20 V B = 14V V IN = 0V V IN = 0V IIL (A) 25C -40C 3 0.5 0 --50 4 0 50 100 10 0 -50 125 0 Ta (C) VIN (V) Saturation Voltage of DIAG Output Output Reverse Current V B = 14V VIN = 5V I FLT = 3 (mA) 50 100 125 Ta (C) Thermal Protection 1.4 0.3 1 IO (A) VB = 14V 0 1 5 1.0 10 0 4 Input Current (Output ON) IIH (mA) VO (V) Ta = 125C 3 IO (A) Threshold Input Voltage VB = 16V 10 0 0 4 IO (A) 20 VB = 14V V B = 14V VO (V) VO (V) VB = 14V 20 10 V B = 16V IO = 10mA 1.2 VO 1.0 0.1 Ta = 25C 0.6 Ta = 125C 10 VFLT (V) Ta = --40C 0.8 VO (V) VF (V) VDL (V) 0.2 V FLT 5 0.4 0.2 0 -50 0 50 Ta (C) 100 125 0 0 1 2 IF (A) 3 4 0 0 60 100 160 180 Ta (C) 37 High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M External Dimensions (unit: mm) Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.5V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed 310.2 Ellipse 3.2 0.15 * 3.8 4.8 0.2 24.4 0.2 1.7 0.1 16 0.2 9.9 0.2 12.9 0.2 3.2 0.15 a 2.45 0.2 6.4 0.5 b Absolute Maximum Ratings Parameter +0.2 (Ta=25C) Symbol Ratings Unit Power supply voltage VB -13 to +40 V Input terminal voltage VIN -0.3 to +7.0 V DIAG output applied voltage VDIAG -0.3 to +7.0 V DIAG output source current IDIAG 3 mA Output current IO 1.2 A Power Dissipation PD 4.8 W Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -50 to +150 C +0.2 1.15 -0.1 +0.2 0.55 -0.1 0.65 -0.1 14 * P2.03 0.1 = (28.42) Conditions 31.3 0.2 a: Part No. b: Lot No. 1 23 15 Stand-alone operation without heatsink; all circuits operating Equivalent Circuit Diagram SLA2502M The MIC is bound by the dotted lines. 8 VB Pre. Reg. Electrical Characteristics NI1 (VBopr =14V, Ta=25C unless otherwise specified) DIAG1 2 Drive CONT. 11k typ. 3 O.C.P DIAG DET Parameter Symbol Operating power supply voltage VBopr min typ max 16 6.0 Unit Conditions NI2 V Iq VINth Hi output I IN Lo output I IN 5 0.8 12 mA 3.0 V 1.0 mA VIN = 5V 100 A VIN = 0V Input current 0 VIN = 0V 1 6 Drive CONT. 11k typ. 5 O.C.P DIAG DET GND1 7 4 10 Drive CONT. 11k typ. 11 O.C.P DIAG DET VCE (sat) Output terminal sink current Saturation voltage of DIAG output 0.5 V IO (off) 2.0 mA VDL 0.3 V IO 1.0A, VBopr = 6 to 16V VO = 0V, VIN = 0V NI4 100 A Open load detection resistor Ropen 30 k Overcurrent protection starting current IS 1.6 A VO = VBopr -1.9V TON 8 30 s IO = 1A 15 30 s IO = 1A TPLH 10 30 s IO = 1A TPHL 15 30 s IO = 1A DIAG output transfer time Out3 Drive CONT. 11k typ. 13 O.C.P 15 12 Out4 VDIAG = 5V TOFF Output transfer time 14 DIAG DET I DIAG = 3mA GND4 IDGH 9 T.S.D DIAG4 Leak current of DIAG output Out2 Pre. Reg. NI3 DIAG3 Saturation voltage of output transistor Out1 T.S.D DIAG2 Quiescent circuit current (per circuit) Threshold input voltage Ratings [Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection Standard Circuit Diagram Note: * The rule of protection against reverse connection of power supply is VB = -13V, one minute (all terminals except VB and GND should be open). VB PZ D1 Out Diagnostic Function SLA2502M IN VCC DIAG 5.1k VB Load GND 3.0V GND GND VIN 0.8V Truth table VIN VO VOUT SHORT Is OPEN OPEN OVER VOLTAGE H L L GND TSD Note 1: A pull-down resistor (11k typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series. Note 2: Grounds GND1 and GND2 are not wired internally. They must be shorted at a pattern near the product. IO GND VDIAG Normal Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU 38 H High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M Electrical Characteristics Circuit Current (single circuit) Circuit Current (4 circuits) 60 (VB = 14V) 1.0 200 Ta = -40C 50 VB 150 Ta = -40C 125C VCE (sat) (V) 30 IB (mA) 25C 40 IB (mA) Saturation Voltage of Output Transistor 25C 100 125C 20 VIN = 0V Ta = 25C 125C 0.5 -40C 50 10 VIN = 0V 0 0 10 20 30 40 0 0 46 10 20 VB (V) 0 0 46 1 IO (A) Threshold Input Voltage Input Current (Output OFF) 20 20 3 VB = 18V 15 125C 25C -40C 2 I IL (A) VO (V) 10 VB = 14V VIN = 0V Ta = 15 14V 3 2 VB (V) Overcurrent Protection Characteristics (Ta=-40C) VO (V) 40 30 10 1 5 5 6V 0 0 1 3 2 0 0 4 1 50 VIN = 0V 20 VB = 14V VB = 14V IDIAG = 3mA Ta = -40C 25C Ta = -40V 25V 125V Iq (mA) 0.2 VDL (V) 0.3 125C 0.2 150 Quiescent Circuit Current (dual circuit) 0.3 0.5 100 Ta (C) Saturation Voltage of DIAG Output Input Current (Output Hi) 0.4 0 VIN (V) IO (A) I IH (mA) 0 -50 3 2 10 0.1 0.1 0 0 VO shorted VO open 1 2 3 4 5 0 -50 6 0 50 100 0 0 150 Thermal Protection Characteristics 20 15 25C 0.9 ROPEN (k) IOLEAK (mA) 5 46 Ta = -40C 1.0 TSD VB = 14V RL = 1.3k 40 Open Load Detection Resistor 1.1 10 30 VB (V) Output Terminal Leak Current (VO = 0V) 15 VO1 (V) 10 Ta (C) VIN (V) 125C 0.8 0.7 10 Ta = 125C 25C 5 -40C 0.6 0 0.5 0 50 100 Ta (C) 150 200 0 5 10 15 VB (V) 20 25 5 10 15 20 VB (V) 39 High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003 External Dimensions (unit: mm) Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits 12.2 0.2 +0.1 10.5 0.2 1.0 -0.05 16 Fin thickness (Ta=25C) Symbol Ratings Unit 8 +0.15 1.27 0.25 Power supply voltage VB 35 V Input terminal voltage VIN -0.3 to 7 V mA I IN 5 DG terminal voltage VDG -0.3 to 7 V DG terminal current I DG 5 mA Drain to source voltage Input terminal current 1 Conditions VDS VB -45 V Output current IO 1.8 A Power dissipation PD 2 W Source to drain Di forward current IF 0.8 A Channel temperature Tch 150 C Operating temperature TOP -40 to +105 C Storage temperature Tstg -40 to +150 C 0.4 -0.05 2.50.2 Parameter 2.0 -0.8 Absolute Maximum Ratings +0.2 7.5 0.2 9 +0.15 0.25-0.05 Block Diagram (for one channel) VB Ta=25C Thermal Protect Bias Clamp Input Logic IN Lavel Shifting Charge Pump Current Limit Chopper DG Electrical Characteristics Symbol VB (opr) min typ Unit max Open/Short Sense Conditions GND 35 Iq Quiescent circuit current Output ON resistance 1 mA VIN=0V, VOUT=0V 200 m IO=1A 300 m IO=1A, Ta=80C VOUT=0V RDS (ON) 50 100 A VIHth 1.4 2.0 3.0 V Ta= -40 to +105C VILth 1.0 1.8 V Ta= -40 to +105C IO, leak Output leak current Input threshold Output ON voltage Output OFF Output ON 70 I IH I IL Overcurrent protection starting current IS 12 1.9 3 Standard Connection Diagram 7,8 OUT1 15,16 A 200 Inpup current Output OFF OUT V VIN=5V VB 1 A VIN=0V (2, 3) 9 A VOUT =VO -1.5V (10,11) OUT2 5V SPF5003 DG1 6 5V Load 5.5 DG2 Load Parameter Operating power supply voltage DG Logic (VB=14V, Ta=25C unless otherwise specified) Ratings 14 Load open detection threshold voltage *1 TTSD 155 C 165 3 4.5 V 70 140 s RL=14, VO= -5V TOFF 35 90 s RL=14, VO *10% 20 A VDG= 5.5V VDGL 0.15 0.5 V IDG=1.6mA TPLH 70 140 s TPHL 45 120 s 1.5 I DG Low level DG output voltage DG output transfer time Note: * *1 5 Vin 2 (7V max) 13 4 12 GND RIN C P U TON Vopen Output transfer time DG leak current Vin 1 (7V max) VOUT=0V RIN IN and RDG are needed to protect CPU and SPF5003 in case of reverse * Rconnection of VB terminal. * Make VB of 1Pin and 9Pin short from the fin to be plated by solder. Timing Chart VIN OFF VIN ON Normal VB 1. Transient time is showed Wave Form below. VO open Normal Open load OCP Normal Normal Shorted load VIN VOUT Recommended Operating Conditions (for one channel) Wave Form Internal current limit min TSDON IOUT Ratings Parameter max Unit TSDOFF VIN DG Power supply voltage 5.5 16 V VIH 4 5.5 V VIL -0.3 0.9 V 1 A High inpidance VOUT -5V Output transfer time IO VOUT * 10% VOUT TON VDG * 90% VDG * 10% VDG 40 RIN 10 20 k RDG 10 20 k Mode TOFF Normal DG output transfer time TPLH RDG Thermal shutdown operating temperature A 5 RDG ILim Internal current limit TPHL Open load Shorted load Overheat VIN H L H L H L H L DG H L H H L L L L VO H L H H L (Limiting) L L L Normal TSD Overheat 41 High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5004 External Dimensions (unit: mm) Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits 17.280.2 +0.1 15.580.2 1.0 -0.05 13 7.50.2 a Symbol Ratings Unit Power supply voltage VB 35 V Input terminal voltage VIN -0.3 to 7 V I IN 5 mA VDG -0.3 to 7 V mA Input terminal current DG terminal voltage 2.0-0.8 (Ta=25C) DG terminal current I DG 5 Drain to source voltage VDS VB -45 V Output current IO 2.5 A Power dissipation PD 2.7 W Source to drain Di forward current IF 0.8 A Channel temperature Tch 150 C Operating temperature TOP -40 to +105 C Storage temperature Tstg -40 to +150 C Conditions 1 12 +0.15 1.270.25 0.4 -0.05 2.50.2 Parameter +0.2 b Absolute Maximum Ratings 10.50.3 24 Fin thickness +0.15 0.25-0.05 a: Part No. b: Lot No. Block Diagram (for one channel) VB Ta=25C Thermal Protect Bias Clamp Input Logic IN Lavel Shifting Charge Pump Current Limit Chopper DG Parameter Symbol Operating power supply voltage VB (opr) DG Logic (VB=14V, Ta=25C unless otherwise specified) Ratings min typ max Unit Open/Short Sense Conditions GND 35 Iq Quiescent circuit current 1 mA 150 m IO =2A 250 m IO =1A, Ta=80C A VOUT =0V VIN=0V, VOUT=0V RDS (ON) Output ON resistance 50 IO, leak Output leak current Output ON VIH Output OFF VIL Output ON I IH 3.0 2.0 OUT V V Standard Connection Diagram Ta= -40 to +105C Input voltage Inpup current Overcurrent protection starting current IS 1.0 V 70 A 2.6 ILim Internal current limit 1.8 10 2,3 Ta= -40 to +105C A VOUT =VO -1.5V A VOUT =0V OUT1 14,15 VIN =5V VB 1 (4,5,6) 13 OUT2 5V SPF5004 DG1 24 5V Load 5.5 DG2 (16,17,18) Load Electrical Characteristics 12 Vopen 155 165 C 3 V TON 165 TOFF 60 s I DG Low level DG output voltage 20 A VDGL 0.15 V TPLH 70 s TPHL 45 s DG output transfer time 9 (7V max) GND RIN C P U s Output transfer time DG leak current Vin 1 (7V max) 21 RIN VB of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin * Make to be plated by solder. VDG =5.5V IDG =1.6mA Timing Chart VIN OFF VIN ON Normal VB VO open Normal Open load OCP Normal Normal Shorted load VIN Recommended Operating Conditions (for one channel) Unit min max 5.5 16 V VIH 4 5.5 V VIL -0.3 0.9 V 1.15 A Power supply voltage IO VOUT Internal current limit Ratings Parameter TSDON IOUT TSDOFF DG High inpidance Mode Normal RIN 10 20 k Open load RDG 10 20 k Shorted load Overheat 42 RDG TTSD Load open detection threshold voltage 11 RDG Thermal shutdown operating temperature 23 Vin 2 VIN H L H L H L H L DG H L H H L L L L VO H L H H L (Limiting) L L L Normal TSD Overheat 43 High-side Power Switch ICs [With Diagnostic Function, Surface-mount 3-circuits] SPF5007 External Dimensions (unit: mm) Features 17.280.2 +0.1 15.580.2 1.0 -0.05 24 Fin thickness 13 7.50.2 a Parameter Symbol (Ta=25C) Ratings Unit Power supply voltage VB 35 V Input terminal voltage VIN -0.3 to 7 V I IN 5 mA VDG -0.3 to 7 V mA Input terminal current DG terminal voltage DG terminal current I DG 5 Drain to source voltage VDS VB -45 V Output current IO 1.8 A Power dissipation PD 2.7 W Source to drain Di forward current IF 0.8 A Channel temperature Tch 150 C Operating temperature TOP -40 to +105 C Storage temperature Tstg -40 to +150 C 2.0-0.8 1 Conditions 12 +0.15 1.270.25 0.4 -0.05 2.50.2 Absolute Maximum Ratings +0.2 b 10.50.3 Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 3ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits +0.15 0.25-0.05 a: Part No. b: Lot No. Block Diagram (for one channel) VB Ta=25C, all circuit operating Thermal Protect Bias Clamp Input Logic IN Lavel Shifting Charge Pump Current Limit Chopper DG Electrical Characteristics Symbol min typ Unit Open/Short Sense Conditions max GND 35 Output ON resistance 1 mA 200 m IO =1A 350 m IO =1A, Ta=80C VOUT =0V RDS (ON) VIN =0V, VOUT =0V 50 100 A Output ON VIHth 1.4 2.0 3.0 V Ta= -40 to +105C Output OFF VILth 1.0 1.8 V Ta= -40 to +105C Output ON I IH IO, leak Output leak current 70 200 Inpup current Output OFF Overcurrent protection starting current Internal current limit ILim Thermal shutdown operating temperature TTSD Load open detection threshold voltage Vopen 155 1.5 1 OUT1 13 VB OUT2 5,6 10,11 20,21 OUT3 VIN =5V SPF5007 5V 4 DG1 VIN =0V 3 A VOUT =VO -1.5V 5 A VOUT =0V 165 C RDG 3 4.5 V RIN 70 140 s 12 1.9 A Standard Connection Diagram A I IL IS OUT V 9 DG2 GND1 GND2 2 7 IN1 3 GND3 17 IN2 8 IN3 18 19 DG3 Load 5.5 Iq Quiescent circuit current Input threshold voltage VB (opr) Load Operating power supply voltage Load Parameter DG Logic (VB=14V, Ta=25C unless otherwise specified) Ratings RDG RDG RIN C P U RIN TON Output transfer time TOFF 35 I DG DG leak current Low level DG output voltage RL=14, VOUT =VB -5V 90 s RL=14, VB *10% 20 A VDG =5.5V VDGL 0.15 0.5 V TPLH 70 140 s TPHL 45 120 s DG output transfer time IDG =1.6mA IN and RDG are needed to protect CPU and SPF5007 in case of reverse * Rconnection of VB terminal. * Make VB of 1Pin and 13Pin short from the fin to be plated by solder. Timing Chart VIN OFF VIN ON Normal VB VO open Normal Open load OCP Normal Normal Shorted load VIN VOUT Recommended Operating Conditions (for one channel) Parameter max Unit TSDOFF DG High inpidance Power supply voltage 5.5 16 V VIH 4 5.5 V VIL -0.3 0.9 V Normal 1 A Open load RIN 10 20 k Shorted load RDG 10 20 k Overheat IO 44 IOUT Ratings min Internal current limit TSDON Mode VIN H L H L H L H L DG H L H H L L L L VO H L H H L (Limiting) L L L Normal TSD Overheat 45 High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017 External Dimensions (unit: mm) Features Internal current sense resistor High accuracy current monitor output (sample & hold function) Built-in overcurrent and thermal protection circuits 14.740.2 +0.1 13.040.2 1.0 -0.05 11 Ratings Unit Power supply voltage 1 VB 0 to 32 V Power supply voltage 2 Vcc -0.5 to 7.0 V Power supply voltage 3 VB 0 to 40 V Current sensing voltage Output terminal voltage Input terminal voltage b (Ta=25C) Symbol Vsense+ -0.8 to 6 Vsense- Vsense+Io * Rsense V VOUT -2 to 32 V -0.5 to 7.0 V VPWM Conditions 1 10 +0.15 1.270.25 0.4 -0.05 2.50.2 Parameter 2.00.2 Absolute Maximum Ratings 7.50.2 a 10.50.3 20 Fin thickness VB terminal, t = 1 min +0.15 0.25-0.05 a) Part No. b) Lot No. VHold Output current IOUT 2.0 A Power dissipation PD 2.4 to 5.0 W Storage temperature Tstg -40 to +150 C Channel temperature Tch 150 C Block Diagram (for one channel) Vcc Depends on surface-mount board pattern VB 17 clamp Parameter Symbol (VB=14V, Ta=25C unless otherwise specified) - One circuit equivalent typ TSD OCP Operating power supply voltage 1 VB min VB Sense+ 70k max Unit Conditions 18 CMOS Logic Hold Operating power supply voltage 2 VCC Quiescent circuit current 1 Iqvb Quiescent circuit current 2 PWM terminal input voltage 14 lamp Hold terminal input voltage Output ON resistance Current sensing resistance 70 Vcc = 5V, VPWM = 0V, One circuit equivalent 0.2 mA Vcc = 5V, VPWM = 0V V 110 Ttsd 150 Io 0.2 Vcc = 5V, VPWM = 5V, Active H * 3 IOUT = 1A 0.21 IOUT = 1A, Ta = 125C 0.21 IOUT = 1A 0.25 IOUT = 1A, Ta = 125C A *4 A *1 Io = 0A, Vcc = 5V 0.2 V 0.500 0.512 V Io = 0.2A, Vcc = 5V 1.219 1.250 1.281 V Io = 0.5A, Vcc = 5V, Ta = -40 to 140C 2.925 3.000 3.075 V 5 mA Io = 1A, Vcc = 5V, VSH = 0V mA Io = 1A, Vcc = 5V, VSH = 5V 15 s t off 15 s tr 100 s tf t shd Hold time after inputting hold t shh S/H settling time VCC 500 Controlling microcomputer CPU 2 3 5 1k 0.01 F VB 17 Sense+ Hold Sense - 50 s 650 s 1 s 2 s s VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033F 80 s VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033F, Ta = 125C t stt 20 D1 5.1 k LG C 6 4 D2 Timing Chart Ordinary operation (auto hold) Thermal protection Ordinary operation (external hold) VPWM Icoil *1 500 to 650 usec Io = 0.5A, Vcc = 5V, 70 18 * Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (-0.8V) VS/H C1 = 0.033F 19 S/H Vout Io = 0.5A, Vcc = 5V OUT SFP5017 PWM C1 Io = 1.2A, Vcc = 5V, Ta = -40 to 140C Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70k typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics. 46 LG Standard Connection Diagram C 1.2 -6 Current monitor output delay time 6 C Vcc = 5V A t on t sh 4 Vcc = 5V, VPWM = 5V, Active H * 3 0.488 ISH Current monitor output hold time Vcc = 5V 110 Rsense Operation circuit for current monitor output Output fall time *2 0.14 RDSon Thermal shutdown operating temperature Output rise time Sense- S/H 5 1 70 3.0 Output transfer time 20 1.5 IHoldH VSH A V Is Current monitor output current mA + - S/H 3.5 Overcurrent protection starting current Current monitor output voltage 7.2 V VHoldL Hold terminal input current V 1.5 IPWMH VHoldH 16 *1 70k Sense R 3.5 VPWML PWM terminal input current Minimum operation of OUT terminal. 5.0 Iqvcc VPWMH V 6 10 OUT 19 PWM 3 Min. operating power supply voltage S Sense MOS 2 Ratings min D Charge Pump OSC Electrical Characteristics SFP5017 1 *2 *1 500 to 650 usec VHold Truth table VPWM L H VOUT L H Overcurrent protection Ordinary operation (auto hold) 47 High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018 External Dimensions (unit: mm) Features Internal current sense resistor High accuracy current monitor output (sample & hold function) Built-in overcurrent and thermal protection circuits 12.20.2 +0.2 Conditions VB 0 to 32 V 1 Vcc -0.5 to 7.0 V 1.270.25 Power supply voltage 3 VB 0 to 40 V Input terminal voltage Vsense+ -0.8 to 6 Vsense- Vsense+Io * Rsense V VOUT -2 to 32 V -0.5 to 7.0 V VPWM 2.0 -0.8 Unit Power supply voltage 2 Output terminal voltage 9 (Ta=25C) Ratings Power supply voltage 1 Current sensing voltage Fin thickness 8 +0.15 0.4 -0.05 2.50.2 Symbol 1.0 -0.05 7.50.2 Absolute Maximum Ratings Parameter +0.1 10.50.2 16 VB terminal, t = 1 min +0.15 0.25-0.05 VHold Output current IOUT 2.0 A Power dissipation PD 2.0 W Storage temperature Tstg -40 to +150 C Channel temperature Tch 150 C Block Diagram (for one channel) Vcc Depends on surface-mount board pattern 2 VB 11 clamp Electrical Characteristics D Charge Pump OSC TSD (VB=14V, Ta=25C unless otherwise specified) S Sense MOS OCP OUT 14 PWM 3 Parameter Symbol 70k Ratings min typ Sense+ max Unit 13 CMOS Logic Conditions Hold lamp 4 70k Min. operating power supply voltage Operating power supply voltage 1 VB min VB Operating power supply voltage 2 VCC Quiescent circuit current 1 Iqvb Quiescent circuit current 2 PWM terminal input voltage 10 14 Hold terminal input voltage Output ON resistance Current sensing resistance 70 Vcc = 5V, VPWM = 0V 0.2 mA Vcc = 5V, VPWM = 0V V 110 Ttsd 150 Io 0.2 A Vcc = 5V, VPWM = 5V, Active H * 3 IOUT = 1A 0.21 IOUT = 1A, Ta = 125C 0.21 IOUT = 1A 0.25 IOUT = 1A, Ta = 125C A *4 A *1 Io = 0A, Vcc = 5V 0.2 V 0.500 0.512 V Io = 0.2A, Vcc = 5V 1.219 1.250 1.281 V Io = 0.5A, Vcc = 5V, Ta = -40 to 140C 2.925 3.000 3.075 V 5 mA Io = 1A, Vcc = 5V, VSH = 0V mA Io = 1A, Vcc = 5V, VSH = 5V -6 15 s t off 15 s tr 100 s tf Current monitor output delay time t shd Hold time after inputting hold t shh S/H settling time 500 3 4 6 1k 0.01 F 11 VB Sense+ Hold Sense- 50 s 650 s 1 s 2 s s VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033F 80 s VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033F, Ta = 125C t stt D1 5.1 k LG C 5 7 D2 Timing Chart Ordinary operation (auto hold) Thermal protection Ordinary operation (external hold) VPWM Icoil *1 500 to 650 usec Io = 0.5A, Vcc = 5V, 70 15 * Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (-0.8V) VS/H C1 = 0.033F 14 13 S/H Vout Io = 0.5A, Vcc = 5V OUT SFP5018 PWM C1 Io = 1.2A, Vcc = 5V, Ta = -40 to 140C Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70k typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics. 48 Controlling microcomputer CPU C 1.2 t on t sh 2 Vcc = 5V 0.488 ISH Current monitor output hold time *3 110 Rsense Operation circuit for current monitor output Output fall time LG Standard Connection Diagram Vcc = 5V Vcc = 5V, VPWM = 5V, Active H 7 C 0.14 RDSon Thermal shutdown operating temperature Output rise time 5 VCC 70 3.0 Output transfer time *2 1.5 IHoldH VSH A V Is Current monitor output current mA Sense- S/H 6 3.5 Overcurrent protection starting current Current monitor output voltage 7.2 V VHoldL Hold terminal input current V 15 S/H 1.5 IPWMH VHoldH 16 *1 3.5 VPWML PWM terminal input current Minimum operation of OUT terminal. 5.0 Iqvcc VPWMH V 6 Sense R + - *2 *1 500 to 650 usec VHold Truth table VPWM L H VOUT L H Overcurrent protection Ordinary operation (auto hold) 49 Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A External Dimensions (unit: mm) Features DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits 12.2 0.2 (Ta=25C) V VB 40 37 V VIN -0.5 to +7.5 V Output current IO 1.8 A Power Dissipation PD 2 W Storage temperature Tstg -40 to +150 C Channel temperature Tch 150 C Output avalanche capability EAV 50 mJ Output terminal voltage Input terminal voltage Conditions +0.2 Unit 1 * 2.0 -0.8 Ratings 8 +0.15 1.270.25 0.4 -0.05 2.5 0.2 Symbol VOUT Power supply voltage 1.0 -0.05 Fin thickness 9 7.5 0.2 Absolute Maximum Ratings Parameter +0.1 10.5 0.2 16 +0.15 0.25 -0.05 Single pulse Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics. Equivalent Circuit Diagram VB VOUT 1 Gate Protction Electrical Characteristics Parameter Power supply voltage Symbol VBopr Reg. REF (VB =14V, Ta=25C unless otherwise specified) OVP Ratings min typ 5.5 max 25 Unit Conditions Gate Driver TSD OCP V P-GND VIN 1 Quiescent circuit current Iq 5 7 mA VIN = 0V (all inputs) Operating circuit current ICC 8 12 mA VIN = 5V (all inputs) 250 k typ Hi output VIN 3.5 5.5 V Lo output VIN -0.5 1.5 V IO = 1A Input voltage VIN 2 VOUT 2 VIN 3 VOUT 3 VOUT 4 Hi output I IN 50 A VIN = 5V Lo output I IN 30 A VIN = 0V 0.6 VIN 4 0.5 0.7 VB = 5.5V L-GND 50 55 V IO = 1A Input current 0.4 Output ON resistance RDS (ON) Output clamp voltage VOUT (clamp) 41 Output leak current I OH 10 A VO = 37V Forward voltage of output stage diode VF 1.6 V I F = 0.5A Overvoltage protection starting voltage VB (ovp) 25 40 V Thermal protection starting temperature TTSD 151 Overcurrent protection starting current IS 1.1 165 Circuit Example VCC C 2 A 6 TON 12 s 12 RL = 14, I O = 1A 14 Output transfer time TOFF 8 s RL = 14, I O = 1A Output rise time Tr 5 s RL = 14, I O = 1A Output fall time Tf 10 s RL = 14, I O = 1A IN2 IN3 L H 15 5 VB SPF5002A IN4 L-GND 13 P-GND 1,9 Use L-GND and P-GND being connected. Truth table VIN VO L 7 OUT2 OUT4 IN1 CONTROL UNIT H 10 OUT1 OUT3 4 Timing Chart OVP VB VOUT VIN Normal 50 Overvoltage Overheat Overcurrent * Self-excited frequency is used in the overcurrent protection. Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A Electrical Characteristics Quiescent Circuit Current Circuit Current (single circuit) 10 10 8 Id (mA) Iq (mA) Ta = -40C 6 4 Ta = 120C 2 Ta = -40C 6 4 Ta = 125C 10 20 30 0 40 6 Ta = 125C 4 2 2 0 Ta = 25C Ta = -40C 8 Ta = 25C Ta = 25C Id (mA) 8 0 Circuit Current (4 circuits) 10 0 10 VB (V) 20 30 0 40 10 20 Output ON Voltage Threshold Input Voltage 15 30 40 VB (V) VB (V) Forward Voltage of Output Stage Diode 1.5 1.0 VB = 14V 5 0 Ta = 125C Ta = 25C 0.4 0.5 0.2 VO = 14V IO = 0.1A 0 0.6 I F (A) VDS (ON) (V) 1.0 VO (V) 10 Ta = 125C Ta = 25C Ta = -40C 0.8 Ta = -40C Ta = 25C Ta = 125C Ta = -40C 1 2 0 3 0 0.5 VIN (th) (V) 1.0 1.5 2.0 IO (A) Overcurrent Protection Characteristics 0 0 0.5 1.0 1.5 VF (V) Overvoltage Protection Starting Voltage 15 15 IO = 0.1A VB =14V 10 Ta = -40C Ta = 25C Ta = 125C VO (V) VO (V) 10 5 5 Ta = 120C Ta = 25C Ta = -40C 0 0 1.0 IO (A) 2.0 0 0 10 20 30 40 VB (V) 51 Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development) External Dimensions (unit: mm) 17.28 0.2 +0.1 15.58 0.2 1.0 -0.05 24 Fin thickness 13 a Symbol Ratings Unit VB 40 V Output terminal voltage (DC) VOUT 50 V Output terminal voltage (pulse) VOUT Output clamping (max 70V) V Output current (DC) IOUT 2.9 A Output current (pulse) IOUT Over current protection starting current A Input terminal voltage V( IN, SEL, B/U) -0.5 to +6.5 V Diag output source current VDIAG 6.5 V Diag output voltage I DIAG 5 mA Power Dissipation 2.0-0.8 (Ta=25C) PD 2.8 W Storage temperature Tstg -40 to +150 C Channel temperature Tch 150 C Conditions 1 12 +0.15 1.27 0.25 0.4 -0.05 2.5 0.2 Parameter Power supply voltage +0.2 b Absolute Maximum Ratings +0.15 0.25-0.05 a : Part No. b: Lot No. Equivalent Circuit Diagram VB (7) Gate Protection Ref VOUT1 (4) Reg Gate driver VIN B/U (17) TSD Output avalanche capability 80 EAV mJ VOUT SENSE VIN SEL (5) Set OUT OCP Latch Reset Single pulse VIN 1 (6) P-GND1 (1, 2) OSC Monitor Symbol VB (opr) (VB =14V, Ta = 25C unless otherwise specified) Ratings min typ 5.5 max Unit 40 V 9 12 mA VB =14V, VIN=0V Operating circuit current Id 12 15 mA VB =14V, VIN=5V (all inputs) Input voltage (1 to 4, SEL, B/U) VIN (H) 3.5 6.5 V VB =14V, VO=1A VIN (L) -0.5 1.5 V VB =14V Input current (single circuit) (1 to 4, SEL, B/U) I IN (H) 200 A VB =14V, VIN=5V I IN (L) 30 A VB =14V, VIN=0V Output ON resistance RDS (ON) 0.18 VB =14V, IO=1A Output clamp voltage VOUT (clamp) VB =14V, IO=1A 70 V Output leak current I OH 50 A Forward voltage of output stage diode VF 1.5 V I F =1A Output moniter threshold voltage 65 P-GND2 (11, 12) VDIAG2 (10) VOUT3 (16) Iq 60 VIN 2 (8) Conditions Quiescent circuit current Power supply voltage VB =14V, VO=50V VIN 3 (18) P-GND3 (13, 14) VDIAG3 (15) VOUT4 (21) VIN 4 (20) P-GND4 (23, 24) VDIAG4 (22) L-GND (19) Circuit Example 2 V VB =14V 6.5 V VB =14V, VDIAG=6.5V VDIAG (L) 0.5 V VB =14V, IDIAG=5mA 6 I DH 10 A VB =14V, VDIAG=6.5V 18 Vt hM VDIAG (H) 6.4 7 DIAG output voltage DIAG output leak current VDIAG1 (3) VOUT2 (9) Electrical Characteristics Parameter Thermal shutdown operating temperature TTSD 151 Overcurrent protection starting current IS 3.0 165 C VB =14V A VB =14V 12 s VB =14V, RL=14, I O=1A TOFF 8 s VB =14V, RL=14, I O=1A Output rise time Tr 5 s VB =14V, RL=14, I O=1A Output fall time Tf 10 s VB =14V, RL=14, I O=1A t DON 12 s VB =14V, RL=14, I O=1A t DOFF 8 s VB =14V, RL=14, I O=1A DIAG output transfer time 8 20 17 5 VB 4 9 OUT1 OUT2 16 OUT3 21 OUT4 VIN1 VIN2 VIN3 VIN4 DIAG1 DIAG2 SPF5009 DIAG3 DIAG4 VINB/U VINSEL LG TON Output transfer time 19 PG1 1, 2 PG2 11, 12 PG3 13, 14 3 10 15 22 PG4 23, 24 Timing Chart Main input signal 1 VIN1 Main input signal 2 VIN2 Backup input signal VINB/U Input select signal VINSEL Power supply voltage VB Output voltage 1 VOUT1 OCP OCP Output current 1 IOUT1 DIAG output 1 VDIAG1 DIAG output 2 VDIAG2 Nomal 52 10.5 0.3 DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in over current and thermal protection circuit and diagnostic function to detect open load Built-in output status signals (over current, over heat and open load) 7.5 0.2 Features Output 1 Output 1 Output 1 Overheat Over current Open load Main mode Nomal Output 1 Output 1 Output 1 Overheat Over current Open load Backup mode 53 Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012 External Dimensions (unit: mm) Features 17.28 0.2 +0.1 15.58 0.2 1.0 -0.05 24 Fin thickness 13 (Ta=25C) Symbol Ratings Unit Power supply voltage 1 VB 40 V Power supply voltage 2 VCC 7.5 V Output voltage VO 40 (DC) V Logic input voltage VIN -0.5 to +7.5 V Output current IO Self Limited A VDIAG 0 to VCC V PD 2.8 to 5 W Storage temperature Tstg -40 to +150 C Channel temperature Tch 150 C Output avalanche capability EAV 100 mJ Diag output voltage Power Dissipation Conditions 1 12 +0.15 1.27 0.25 0.4 -0.05 2.5 0.2 Parameter 2 0.2 b Absolute Maximum Ratings 7.5 0.2 a 10.5 0.3 Output monitor circuit (DIAG) DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits +0.15 0.25-0.05 *1 a : Part No. b: Lot No. Equivalent Circuit Diagram *2 VCC1-2 (7) Diag1 (5) Single pulse VB (19) * 1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics * 2. Changes by the patern of mounted substrate Gate Protection VOUT1 (3) Reg OVP Gate driver TSD VIN1 (4) OCP P. GND1 (1, 2) Ch1 Electrical Characteristics (VB =14V, Ta = 25C unless otherwise specified) Ratings Parameter Symbol Operating power supply voltage 1 VB (opr) 5.5 40 V Operating power supply voltage 2 VCC (opr) 4.5 5.5 V min typ max Unit Conditions Ch2 VCC3-4 (18) Quiescent circuit current Iq 4 6 mA VB =14V, VIN=0V Operating circuit current Id 8 12 mA VB =14V, VIN=5V Hi output VIN 3.5 5.5 V VB =14V, VO=1A Lo output VIN -0.5 1.5 V VB =14V Input voltage Hi output I IN 50 A VB =14V, VIN=5V Lo output I IN -30 A VB =14V, IO 1A 0.3 VB =14V, IO=1A, Ta=125C 0.2 VB =14V, IO=1A, Ta=25C 55 V 2.8 mA VB =14V, VCC=5V, VIN=0V, VO =40V, Ta=25C 900 A VB =14V, VCC =5V, VIN=0V, VO =14V, Ta=25C 1.6 V 40 V Input current Output ON resistance Output clamp voltage Output leak current RDS (ON) VOUT (clamp) 45 50 I OH Forward voltage of output stage diode VF Overvoltage protection starting voltage VB (ovp) VB =14V, IO=1A Overvoltage protection hysteresis voltage VB (ovp*hys) Thermal shutdown operating temperature Overcurrent protection operating current TTSD IS 151 8 V 165 C L. GND (6) Circuit Example A VB =14V, Ta=-40C VB =14V, Ta=25C 5 A VB =14V, Ta=125C TOFF 8 s Tr 5 s 10 s Output transfer time Output rise time Output fall time Output-diag voltage ratio Diag output clamping voltage Tf ra (DIAG) VDIAG (clamp) 0.195 0.2 0.205 4.85 19 VIN1 VIN2 VIN3 VIN4 4 9 16 21 3 10 15 22 VOUT1 VOUT2 VOUT3 VOUT4 Diag1 Diag2 Diag3 Diag4 SPF5012 5 8 17 20 Diag output P-GND1 P-GND2 P-GND3 P-GND4 6 1, 2 11,12 13,14 23,24 Truth table VIN VO H L L H Short L-GND and P-GND in a pattern near the product. VB=14V, RL=14, I O=1A VB =14V, VO =1 to 14V, Rdiag=500k V Input signal L-GND A s 18 7 VCC1-2 VCC3-4 VB VB =14V 6 12 Ch4 Diag4 (20) VOUT4 (22) P. GND4 (23, 24) VIN4 (21) I F=1A 6 TON Ch3 Diag3 (17) VOUT3 (15) P. GND3 (13, 14) VIN3 (16) VCC 25 Diag2 (8) VOUT2 (10) P. GND2 (11, 12) VIN2 (9) Timing Chart VB=14V, VCC=5V, VO =40V OVP VB VOUT VIN Normal 54 Overvoltage Overheat Overcurrent * Self-excited frequency is used in the overcurrent protection. 55 Stepper-motor Driver ICs SLA4708M External Dimensions (unit: mm) Features High output breakdown voltage of 50V Affluent output current of 1.5A Built-in overcurrent, overvoltage and thermal protection circuits Low standby current of 50A 31.00.2 3.20.15 Input voltage VS 35 V 50 VO VIN -0.3 to +7 V 1.5 A Diagnostic output sink current IDIAG 10 mA Diagnostic output withstand voltage IDIAG. H 7 V Operating temperature Top -40 to +85 C Storage temperature Tstg -40 to +150 C PD 3.5 (Ta=25C) W Power Dissipation Lead plate thickness resins 0.8 max 9.90.2 8.5max b 12 Pin 1 +0.2 0.85 -0.1 1.20.15 V IO, AVE Output current Conditions a 2.7 16.00.2 Breakdown voltage Unit 9.5min (10.4) Power supply voltage Ratings 13.00.2 16.4 (Ta=25C) Symbol 4.80.2 1.70.7 0.2 Absolute Maximum Ratings Parameter Ellipse 3.20.15 * 3.8 24.40.2 +0.2 0.55 -0.1 0.15 2.20.7 1.45 0.7 11*P2.54 1.0 =27.94 31.5 max a: Part No. b: Lot No. 1 2 3 4 5 6 7 8 9 10 11 12 Without heatsink Standard Circuit Diagram Electrical Characteristics Parameter Input voltage (I A/A, I B/B standby) Input current Symbol (VS =12V, Ta=25C) min typ max 0.8 VIL VIH C Ratings 2.4 Unit Output leak current Overcurrent detection 4 OUTA V I IL -0.8 mA VIN = 0.4V I IH 50 A VIN = 2.4V Overvoltage detection Saturation voltage of diagnostic output Standby current 56 VO.STA 1.3 V I O = 1A, Ta = 25C VO.STA 1.5 V I O = 1.5A, Ta = 25C 100 A I O.LEAK I SD 1.8 VSD 27.5 I STB VO = 16V A V VDIAG.L 0.3 50 ZD V V A I DIAG = 5mA VS = 12V 5 OUT A 9 OUT B SLA4708M 8 1 OUT B VS 12 DIAG 3 I A /A I B/B 10 5V Output saturation voltage + Conditions 2 STBY 4.7 k P-GND 6 L-GND 11 L-GND 7 N.C. CPU ZD: VS <35V C 100F (Reference) Stepper motor Stepper-motor Driver ICs SLA4708M Electrical Characteristics Overvoltage Protection Characteristics 20 200 14 Ta = 25C Vcc=12V Constant (ST = 5V) Output voltage VO (V) 100 At Constant IS (mA) At standby IS (A) Power supply current 12 10 Common for all phases 10 8 6 4 At standby (ST = 0V) 2 0 0 0 10 20 30 Power supply voltage VS (V) 0 0 10 20 Power supply voltage VS (V) Saturation Voltage of Output Transistor Characteristics Saturation voltage of output transistor Vsat (V) Power Supply Current Characteristics 30 35 2.0 Vcc (Vs) =16V Ta =25C Common for all phases 1.5 1.0 0.5 0 0 1.0 2.0 3.0 Output current IO (A) Thermal Protection Characteristics 14 Vcc (Vs) =12V VST = 5V Output voltage VO (V) 12 10 8 T j2 T j1 6 4 2 0 0 110 120 130 140 150 160 Junction temperature Tj (C) 57 2-ph Stepper-motor Driver ICs SPF7211 External Dimensions (unit: mm) Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.) Built-in recovery diode Built-in standby function Built-in overcurrent and thermal protection circuits and low voltage input shutoff function Built-in overload and disconnection detection function 17.280.2 Flag terminal withstand voltage Flag terminal current Detect voltage Power dissipation Junction temperature Operating temperature Storage temperature a Ratings 40 -0.3 to 15 0.8 1.0 7 3 -2 to 2 4.1 39 150 -40 to 110 -40 to 150 PD Tj Top Tstg Unit V V A V mA V W Remarks VIN 20.2 b Symbol VBB VIN Io IoPeak VFlag IFlag VRs 10.50.3 Fin thickness 1 12 +0.15 1.270.25 VBB 0.4 - 0.05 2.50.2 Output current 1.0 -0.05 13 Absolute Maximum Ratings Parameter Main power supply voltage Input voltage +0.1 15.580.2 24 7.50.2 Features Tw 1mS VFlag VBB +0.15 0.25- 0.05 a) Part No. b) Lot No. For Ta = 25C * 1 For Tc (Ttab) = 25C C C C Note: *1: With glass epoxy + copper foil board (size 5.0*7.4cm; t: glass epoxy = 1.6mm /copper foil = 18m) Standard Circuit Diagram Recommended Operation Range Unit V V A V mA V C Rs Remarks VIN VBB Continuous VFlag VBB I20 24 I21 Ph2 FL1 GND GND GND GND Out2A Rs2 FL2 Out2B 13 Ratings 6 to 18 -0.3 to 7.0 0.5 0 to 7.0 0 to 1.0 -1 to 1 -40 to 110 PC (ECU) SPM Electrical Characteristics Parameter Main power supply current Low voltage protection operation voltage UVLO hysteresis voltage Output leak current Symbol IBB IBBS VUVLO VUVLOhys IoleakL IoleakH min Ratings typ 3.5 -100 100 0.5 0.8 1.2 1.5 1.2 1.3 Output saturation voltage VsatH Recovery diode forward voltage Input terminal Input voltage Hysteresis voltage Ph terminal Input current Ixx, Set terminals Input current Detect voltage VRs Oscillation frequency PWM frequency Ct terminal threshold voltage Ct terminal current Overcurrent detection voltage Open detection voltage Flag terminal leak current Flag terminal saturation voltage Flag terminal current Response pulse width Set terminal Pulse rate Pulse number Flag response time OCP operation Open operation I/O propagation time Thermal protection temperature Thermal protection hysteresis Thermal alarm temperature Thermal alarm hysteresis 58 V FL V FH VFGO VIL VIH VIhys IIL IIH IIL IIH Fosc FPWM VctL VctH Ictsink Ictsouce VocpL VocpH VocpL VocpH Vopen IleakFlag VFlagL IFlag Tpw Tpws Fclock Pulse tocp1 tocp2 tocp3 topen1 topen2 tonH1 toffH1 tonH2 toffH2 tonL1 toffL1 tonL2 toffL2 Tj Tj Talarm Talarm Rs max 50 50 4.5 0.5 VsatL 1.2 0.8 2.0 0.5 -5 -5 -30 660 420 40 28.8 14.4 1.5 VBB-2.5 1.0 VBB-2.3 5 5 700 450 70 48 24 0.5 1.5 720 -120 3.0 VBB-2.0 50 740 480 90 72 36 4.2 VBB-1.7 1.85 VBB-1.5 -60 10 0.5 3 10 100 17 2.5 5.0 5.0 2.5 2.5 24 256 5.0 10.0 10.0 5.0 5.0 1.5 1.5 31 10.0 20.0 20.0 10.0 10.0 100 100 2.0 0.5 100 100 150 120 20 130 20 I11 Ph1 Ct Set GND GND GND Out1A Rs1 VBB 12 Out1B Symbol VBB VIN Io VFlag IFlag VRs Top 1 I10 Parameter Main power supply voltage Input voltage Output current Flag terminal withstand voltage Flag terminal current Detect voltage Operating temperature 140 Unit Conditions mA A V V A A V V V V V V V V V V A A A A mV mV mV kHz kHz V V A A V V V V mV A V mA S S Hz -- S S S S S S S S S S S S S C C C C In ordinary operation (no load) At sleep VBB = 40V, Vo = 0V VBB = Vo = 40V Io = 0.5A Io = 0.8A Io = -0.5A Io = -0.8A Io = 0.5A Io = -0.5A Io = -0.5A Ct 2200pF Rs 1 typ (1 to 2W) IoM VRs/Rs 2-phase excitation Clock Ph1 I10, I11 Ph2 I20, I21 *1 Out voltage Out voltage VBB = 5.5V VBB = 5.5V Sence voltage VFlag = 7V IFlag = 1mA In ordinary operation At sleep Ct = 2200pF In ordinary operation; Ct = 2200pF At switching the phase When Ixx shifts from L to H In ordinary operation When Ixx shifts from L to H *2 Note: *1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency. *2: Thermal protection and alarm temperatures are design values. Excitation Signal Time Chart 0 L H L H 1 H H L H 2 H H H H 3 L H H H 0 L H L H 1 H H L H 1 to 2-phase excitation Clock Ph1 I10, I11 Ph2 I20, I21 VIL = 0.8V VIH = 2.0V Ix0 = High, Ix1 = High Ix0 = Low, Ix1 = High Ix0 = High, Ix1 = Low Ct = 2200pF20% Ct = 2200pF20% VBB = 6 to 18V + 0 L H L H 1 H L L H 2 H H L H 3 H H H L 4 H H H H 5 L L H H 6 L H H H 7 L H L L 0 L H L H 1 H L L H 2 H H L H 3 H H H L * For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph excitation (Ixx turns from high to low). The OPEN detection function is invalid except in this sequence. 2-ph Stepper-motor Driver ICs SPF7211 Electrical Characteristics Vsat Temperature Characteristics (Io=0.5A) Diode VF Characteristics (IF=0.5A) 1.7 VFGO VsatH 1 0.8 0.6 0.4 VsatL 1.5 Forward voltage VF (V) Saturation voltage Vsat (V) 1.2 0.2 1.3 1.1 VFH 0.9 VFL 0.7 0 -30 -10 10 30 50 0.5 -30 -10 10 70 90 110 130 150 Junction temperature (C) OSC Temperature Characteristics 70 90 110 130 150 Ta-PD Characteristics 55 40 Infinite heatsink equivalent (Tc=25C) j-tab 3.2C/W 53 FOSC 51 49 47 Power dissipation PD (W) Oscillation frequency FOSC (kHz) 30 50 Junction temperature (C) 30 20 10 Copper foil area (5.0*7.4mm, t=18m) j-a 30.5C/W Ct=2200pF 45 -30 -10 10 30 50 70 90 110 130 150 Junction temperature (C) 0 0 25 50 75 100 125 150 Ambient temperature Ta (C) 59 Full Bridge PWM Control DC Motor Driver ICs SI-5300 External Dimensions (unit: mm) P-ch MOS for high side and N-ch MOS for low side in one package Enable to drive DC5V Possible to drive a motor at the LS-TTL, C-MOS Logic level Guarantee Tj=Tch=150C Built-in over current protection and thermal shut down circuits Built-in diagnosis function to monitor and signal the state of each protection circuits Built-in vertical current prevention circuits (Dead time is defined internally.) No insulator required for Sanken's original package (SPM package) 4.80.2 (28.4) b (4) (R0.8) R-end +0.2 0.75-0.1 +0.2 0.45-0.1 14 * P2.030.1=(28.42) Absolute Maximum Ratings Parameter Symbol Ratings Unit 40 20.5 350.3 (Ta=25C) VM Motor supply voltage 4.50.7 Conditions a: Part No. b: Lot No. V 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Input terminal voltage IN1 -0.3 to 7 V IN2 -0.3 to 7 V PWM -0.3 to 7 V IO 5 A IO (p-p) 17 A Output current Equivalent Circuit VM VM PW 1ms, Duty VM 50% B fPWM PWM control frequency 20 kHz Duty=20% to 80% B OCP Pre-Rec OCP Pch1 Forward * reverse rotation switch frequency* fCW 500 Hz Operating temperature TOP -40 to +85 C Tj, Tch -40 to +150 C TSD Q R C -40 to +150 Tstg j-c 3.7 C/W j-a 35 C/W B S M Dead Time IN1 Storage temperature FF A Pch2 OUT1 A B Junction and channel temperature PWM ECU inside VCC PULL-UP Resistor OUT2 Nch1 PWM down edge sense Thermal resistance DIAG Nch2 A A OCP OCP B Dead Time IN2 PD1 3.6 W Without heatsink PD2 33.7 W With infinite heatsink Power dissipation Note: * The dead time for the length current prevention in positive and the reversing switch is set by internal control IC. The set point in internal IC at the dead time is 20s (typical). Please take into account the dead time and consider the load conditions when you use the IC. Output saturation voltage Ratings min typ LGND max 0.8 V IO=3A V, VO-PG 0.3 V IO=3A I L, L 100 A VM=40V I L, H 100 A VM=40V * 15 *3 s VPWM: L s VPWM: H 10 s 10 2 tpHL tpHL-tpLH Static circuit current H (Vth=2.5V typ) IO=10A 0.8 V IO=3A 1.0 V IM1 22 mA Stop mode IM2 22 mA Forward and reverse mode 16 mA VIN, L IIN, L V 2.0 IIN, H 200 OUT1 t DIAG 20 ms DIAG terminal voltage VD *L V * Vth VOUT GND VOUT*0.9 OUT terminal GND tpLH Output transmission time tpLH is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.9) of the output terminal. ID * SINK=1mA Breake Breake High inpidance High inpidance IOUT (A) *4 GND OUT terminal VOUT *0.1 tpHL Protection circuit Return to constant action VM=2V VM=2V VM IN1 IN2 PWM Vth GND Output transmission time tpHL is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.1) of the output terminal. VM-OUT1 (Pch1 VDS) VM-OUT2 (Pch2 VDS) VOUT1-GND (Nch1 VDS) VOUT2-GND (Nch2 VDS) OUT1 OUT2 *4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit. 60 Stop (Free Run) OUT2 GND VPWM (5V) PWM terminal Stop (Free Run) C=1F (typ) *3: Output transmission time (tpHL) VPWM (5V) PWM terminal Reverse Duty OFF High inpidance Note: *1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H 0V: L) is input to the terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25C, fPWM=10kHz, VM=14V) are assumed to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2). It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time. *2: Output transmission time (tpLH) Reverse Duty ON IN2 VIN1=VIN2=VPWM=5V 1 DIAG output pulse width Forward Duty OFF IN1 VIN1=VIN2=VPWM=0V A 4,12 PGND Brake mode VIN1=VIN2=VPWM A 16 0.3 Forward Duty ON VIN1=VIN2=VPWM IOCP 8 LGND Delay Capacitor 1F Therminal name A OPC start current M Timing Chart IO=10A PWM V -100 9 TDIAG Pull-up Resistor 10k (Open Collector) L (Vth=2.5V typ) IO=3A 3.0 SI-5300 10 DIAG VCC V IM3 14, 15 OUT2 7 PWM V VIN, H Input terminal current 6 IN1 1.0 VF *H 3, 5, 13 VM 1, 2 OUT1 11 IN2 CPU 0.8 VF *L Forward voltage characteristic of diode between drain and source + Capacitor 220F Battery V, VM-VO Output transmission time PGND Standard Connection Diagram Conditions VM=24V (2 min.) 6 tpLH Input terminal voltage Unit V Output leakage current CDIAG 1F A PGND (Unless, otherwise specified, Tj=Tch=25C, VM =14V, IO =3A) 18 VIN Motor supply voltage TDIAG Relay Electrical Characteristics Symbol DIAG CONTROL B A Parameter 3.60.5 (R0.8) 7.60.5 a 16.10.2 2.70.2 (4.5) Features IOUT (A) TDIAG DIAG DIAG Threminal VCC=5V Pull-up 20ms (min) Full Bridge PWM Control DC Motor Driver ICs SI-5300 Electrical Characteristics Output saturation voltage (Pch) Output saturation voltage (Nch) Forward voltage of Diode between drain and source 0.5 1.0 12 VM=14V VM=14V Ta=25C 10 0.4 0.8 Nch MOS FET Ta=85C Ta=25C 0.4 Ta=-40C 0.2 0 8 Ta=85C 0.3 Ta=25C I FSD (A) 0.6 V*VO -PG (V) V*VM -VO (V) Ta=150C Ta=150C Ta=-40C 0.2 1 2 3 4 5 6 2 0 0 7 0 1 2 3 I O (A) 4 5 6 7 0 0.2 0.4 I O (A) Quiescent circuit current 0.6 1.2 0.6 Duty on VM=14V VM=14V Brake 0.5 12 Duty off Ta=150C VO (V) Stop I SINK (mA) 0.4 I M (mA) 1.0 Current of input terminal (SINK current) 16 15 0.8 VFSD (V) Voltage of input terminal (Threshold voltage) 25 20 Pch MOS FET 4 0.1 0 6 Ta=150C Ta=25C 8 Ta=-40C 10 Ta=85C Ta=25C 0.3 Ta=-40C 0.2 4 5 0.1 I O=0A Ta=25C 0 0 10 20 30 0 0 40 0 1 2 VM (V) 3 4 5 6 7 0 1 2 VIN1, IN2, PWM (V) Current of input terminal (Source current) 3 4 5 6 7 VIN1, IN2, PWM (V) VTDIAG - VDIAG Characteristics Thermal shut down protection Pull-up resistance =3k -12 6 6 Ta=25C Ta=150C Ta=25C Ta=-40C 4 Ta=-40C -6 3 3 -4 2 2 -2 1 1 0 10 20 30 0 40 0 1 VM (V) 2 3 4 5 0 100 6 Pch MOS FET Safe Operating Area (SOA) 150 175 200 Ta (C) Nch MOS FET Safe Operating Area (SOA) PD --Ta Characteristics 40 100 100 Tc=25C Tc=25C 1ms 1ms 10ms I OUT (A) 10 100ms 10 10ms 100ms 1 1 0.3 0.3 2 125 VTDIAG (V) Allowable Power Dissipation PD (W) 0 I OUT (A) 4 VDIAG (V) Ta=150C -8 5 5 VDIAG (V) IIN1, IIN2, PWM source (A) -10 VM=10V I O=0A VM=14V I IN1=I IN2=PWM=0V 10 VM-OUT (V) 40 100 2 10 VOUT -PG (V) 40 100 35 Infinite heatsink (Tc =25C) 30 25 20 15 10 5 No heatsink 0 -40 -30 0 25 50 75 100 Ambient temperature Ta (C) 61 Full Bridge DC Motor Driver ICs SPF7301(under development) External Dimensions (unit: mm) A DMOS of low ON resistance (0.1 typ) is mounted on the high and low side power elements Two input signals control the forward/reverse/brake of a DC motor Current limit and overcurrent protection circuits Low voltage and thermal protection, excess input detecting output and input terminal open protection Symbol Ratings Unit VB VIN1,VIN2 VEN VDI Io IoPeak VDIAG IDIAG P D1 P D2 Tj Top Tstg -0.3 to 36 -0.3 to 6 -0.3 to 12 -0.3 to 6 7 15 -0.3 to 6 -3 39 4 -40 to 150 -40 to 105 -40 to 150 V V V V A A V mA W W C C C j-c 3.2 C/W j-a 31 C/W Junction temperature Operating temperature Storage temperature Thermal resistance (junction to case) Thermal resistance (junction to ambient air) 13.04 20 a 10 0.4 - 0.05 a) Part No. b) Lot No. DIAG terminal sink current With an infinite heatsink mounted *1 Standard Circuit Diagram VB Ratings Unit Main power supply voltage DI terminal input voltage Input terminal input voltage Output current DIAG terminal voltage Operating temperature VB VDI VINx Io VDIAG Top 8 to 18 -0.3 to 5.3 -0.3 to 5.3 1 -0.3 to 5.3 -40 to 105 V V V A V C Full Brige Driver IC Main power supply current Low voltage protection operation voltage UVLO hysteresis voltage Output terminal leak current Output DMOS RDS (ON) Forward voltage characteristics between output DMOS and DS Overcurrent limiting operation current OPC start current Input terminal voltage VIN1, VIN2 Input terminal current VIN1, VIN2 DI terminal voltage DI terminal current EN terminal input voltage EN terminal input current DIAG terminal output voltage DIAG terminal output current DIAG terminal leak current Input delay time Overvoltage protection operation voltage OVP hysteresis width Thermal protection starting temperature Thermal protection hysteresis width 62 Ratings typ 15 max 100 7.0 6.5 5.0 4.5 0.5 -100 4.5 4.5 4.5 4.5 100 100 100 100 1.5 1.5 1.5 1.5 7 7 7 7 15 15 15 15 100 200 200 200 200 10 10 10 10 2 0.8 -100 -100 2 0.8 -100 -100 0.8 4 100 10 0.8 -10 1.5 -10 35 151 40 5 165 15 15 20 15 6 6 4 45 M OUT2 Cin R1 R2 RDI PGND LGND * Recommended connection parts Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF DIAG terminal pull-up resistance RDIAG: 20k Input terminal pull-down resistance R1, R2, RDI: 10k Unit mA A V V V A A m m m m V V V V A A A A A A A A V V A A V V A A V A A V mA A S S S S S V V C C OUT1 SFP7301 Remarks (Tj = 30 to 125C, VB = 14V, EN = DI = 5V, Ccp = 33nF, RDIAG = 20k unless otherwise specified) * 2 Electrical Characteristics RDIAG IN1 DI Symbol min Ccp DIAG IN2 Parameter Vcc EN CP Recommended Operation Range IBB1 IBB2 VuvloH VuvloL UVLO IleakHS IleakLS RDS(ON)_1H RDS(ON)_2H RDS(ON)_1L RDS(ON)_2L VF_H1 VF_H2 VF_L1 VF_L2 Iocp1_H1 Iocp1_H2 Iocp1_L1 Iocp1_L2 Iocp2_H1 Iocp2_H2 Iocp2_L1 Iocp2_L2 VINxH VINxL IINxH IINxL VDIxH VDIxL IDIxH IDIxL VENth IENH IENL VDIAG IDIAG IDIAGL TdON TdOFF Tr Tf Tddis VOVP VOVP Ttsd_ON Ttsd 0.25-0.05 1kHz, Duty 1%, Pulse 10S Power supply Symbol +0.15 +0.15 1.270.25 Note: *1: With glass epoxy + copper foil board (size 5.0 * 7.4cm; t: glass epoxy = 1.6mm /copper foil = 18m) Parameter 20.2 1 Remarks 10.50.3 11 2.50.2 Parameter Power dissipation Fin thickness (Ta=25C) Main power supply voltage Input terminal input voltage EN terminal voltage Disable terminal input voltage DIAG output current DIAG inflow current 1.0 -0.05 0.2 b Absolute Maximum Ratings Output current +0.1 14.740.2 7.50.2 Features Conditions For VEN = 0V Io1 = 1A Io2 = 1A Io1 = -1A Io2 = -1A VDI = 5V VDI = 0V VDI = 5V VDI = 0V VEN = 5V VEN = 0V IDIAG = 0.5mA For VDIAG = 1.6V Time from VINxH to Voutx*0.2 Time from VINxL to Voutx*0.8 Time of Voutx from 20% to 80% Time of Voutx from 80% to 20% Time from DIthH to Voutx*0.2 *3 *3 Note: *2: For the electrical characteristics for Tj = -40 to 150C, the design warranty applies to the above specification values. *3: Thermal protection starting temperature is 165C (typ) by design. The above parameters are the design specifications. 63 High Voltage Full Bridge Drive ICs SLA2402M Features External Dimensions (unit: mm) One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required 3.2 0.15 * Ratings Unit VM 500 V b Conditions 0.65 +0.2 -0.1 16.00.2 13.00.2 9.90.2 Lead plate thickness resins 0.8 max a 9.5 min Symbol 4.80.2 1.70.1 2.7 Parameter Power source voltage Ellipse 3.2 0.15 *3.8 16.4 0.2 8.5 max Absolute Maximum Ratings 31.0 0.2 24.4 0.2 +0.2 2.450.2 1.0 -0.1 +0.2 17* P1.68 0.1 =28.56 Input voltage VIN 15 Output voltage VO 500 V Output current IO 15 A PW Power dissipation PD 5 (Ta=25C) W Without heatsink Storage temperature Tstg -40 to +125 C Operation temperature Topr -40 to +105 C V 0.55 -0.1 31.5 max 250s a: Part No. b: Lot No. * Power GND (D terminal) to -HV (-HV terminal) voltage. Block Diagram Electrical Characteristics Parameter Symbol Power MOS FET output breakdown voltage BVOUT Ratings min typ Unit max Conditions 7 500 IO=100A V 4 MOSQ1 IOUT (off) High-side Power MOS FET output on-state voltage Low-side Power MOS FET output on-state voltage A 100 MOSQ'2 LO1 GL1 15 OUT2 MIC MOSQ'1 2 VO=500V MOSQ2 HO2 HO1 OUT1 Power MOS FET output leakage voltage +12V VCC D1 VIN1 -HV VIN2 LO2 L GND GL2 IO=0.4A, VIN=10V VOUT (on) 1 0.28 0.4 0.52 V VOUT (on) 2 1.4 2.0 2.6 V IO=2A, VIN=10V VOUT (on) 1 0.28 0.4 0.52 V IO=0.4A, VGL=10V VOUT (on) 2 1.4 2.0 2.6 V IO=2A, VGL=10V ICC 1 3.0 mA VCC=4.5 to 15V 3 6 8 10 9 11 13 16 CPU * Dotted Line: Outside Connection Quiescent circuit current ICC 2 4.0 mA VCC=10V, VM=400V Operating circuit current ICC 3 4.0 mA VCC=10V, VM=400V Input voltage (High level) VIH Input voltage (Low level) VIL Delay time * Operating voltage 0.8VCC 0.2VCC V VCC=4.5 to 15V V VCC=4.5 to 15V Timing Chart t d (on) 1.4 s VCC=10A, VIN=10V, t d (off) 3.3 s VM=85A, t 2.5 s IO=0.41A VCC 15 V -40 to +105C Ignition VCC IN1 IN2 * About delay time HO1 Signal input waveform vs output waveform LO2 1 Highside switch turn-on, turn-off 2 Lowside switch turn-on, turn-off HO2 VIN1 0V 10% VIN1 10% 10% 0V 10% LO1 --HV 0V 0V 10% 10% OUT2-GND td (on) td (on) Measurement Circuit VIN2 RL VOUT1 VOUT2 td (on) Conditions VCC=10V, VIN=10V (pulse) VM=85V IO=0.41A (RL=207) * When pulse signal is inputted to VlN1, VIN2 VIN1 VM 64 -100V VOUT2 * t: t = td (on) - td (off) VIN1 0V 10% 10% VOUT1 RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off. td (on) -400V OSC 400Hz 17 High Voltage Full Bridge Drive ICs SLA2402M Electrical Characteristics Quiescent circuit current supplied high voltage Quiescent circuit current 25C -40C 1.0 0.5 2.5 150C 2.0 105C 1.5 25C 1.0 -40C 0.5 0 0 0 5 10 15 100 300 400 VIN=0V VM=400V 105C 3 25C 2 -40C 1 10 15 12V 1.5 10V 9V 1.0 0.5 4.5V 200 300 400 VCC =VIN =10V 10V 1.5 9V 1.0 0.5 4.5V -40C 0 2 3 100 500 Ta=25C 8 2 VCC=15V VCC=9V 6 4 VCC= 4.5V 2 0 0 50 100 150 0 5 10 15 Input voltage VIN (V) Ambient temperature (C) Output on-state voltage 400 10 4 Output current (A) 300 Gate drive voltage 6 0 -50 4 200 High voltage VM (V) Gate drive voltage VGL (V) Gate drive voltage VGL (V) 2 Input threshold voltage 8 5 Input threshold voltage VIH, VIL (V) VCC=VIN=10V 4 3 I O=2A 2 1 I O=0.4A 0 -50 12V 0 8 25C VCC= 15V 2.0 VCC=10V 4 500 2.5 500 10 105C 400 0 100 Gate drive voltage 150C 300 3.0 High voltage VM (V) 8 200 Ta=25C VCC= 15V 2.0 0 10 6 100 Operating circuit current 2.5 20 Output on-state voltage 1 0.5 3.5 Operation voltage VCC (V) 0 1.0 0 0 0 5 -40C High voltage VM (V) Ta=25C 150C 0 25C 1.5 500 3.0 Quiescent circuit current ICC2 (mA) Quiescent circuit current ICC2 (mA) 200 Quiescent circuit current 5 4 105C 2.0 High voltage VM (V) Quiescent circuit current supplied high voltage 150C 2.5 0 0 20 Operation voltage VCC (V) Output on-state voltage (V) VCC=VIN1(2)=10V Operating circuit current ICC3 (mA) Quiescent circuit current ICC1 (mA) 1.5 3.0 VIN=0V VCC=10V Operating circuit current ICC3 (mA) 2.0 Quiescent circuit current ICC2 (mA) 2.5 150C 105C VIN=0V Output on-state voltage (V) Operating circuit current 3.0 3.0 0 50 100 Ambient temperature (C) 150 7 VCC=10V VIH 6 5 4 VIL 3 2 1 0 -50 0 50 100 150 Ambient temperature (C) 65 High Voltage Full Bridge Drive ICs SLA2402M Electrical Characteristics High side switch turn-on, off High side switch turn-on, off 5.0 5.0 Ta=25C VM=85V, I O=0.41A 5.0 VM=85V, I O=0.41A VCC=10V 4.0 Ta=25C VM=85V, I O=0.41A turn-off turn-off 3.0 2.0 4.0 turn-on, off (s) 4.0 turn-on, off (s) turn-on, off (s) Low side switch turn-on, off 3.0 2.0 turn-off 3.0 2.0 turn-on turn-on 1.0 0 6 8 10 12 14 0 -50 16 Operation voltage VCC (V) turn-on, off (s) 3.0 2.0 turn-on 1.0 0 50 100 150 Power derating curve 6 Power dissipation (W) 150 4 without heatsink 4 3 2 1 0 50 100 150 8 10 12 14 16 Operation voltage VCC (V) Safe operating area (Power MOS FET) RDS (on) limited 10 10 1 0.1 100s 1ms 1 10ms 0.1 0.01 0.001 0.0001 0.001 6 100 Ta=25C Single pulse 0.01 0.1 1 Power time (s) Ambient temperature (C) Ambient temperature (C) Transient thermal resistance (C/W) turn-off 4.0 66 100 100 VM=85V, I O=0.41A VCC=10V 0 -50 50 Transient thermal resistance characteristics 5.0 5 0 0 Ambient temperature (C) Low side switch turn-on, off 0 -50 1.0 Drain current (A) 4 turn-on 1.0 10 100 Ta=25C Single pulse 0.01 10 100 Drain to source voltage (V) 1000 67 High Voltage Full Bridge Drive ICs SLA2403M Features External Dimensions (unit: mm) One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required 3.2 0.15 Ratings Unit VM 500 V Input voltage VIN 15 V Output voltage VO 500 V IO 7 A Tc=25C IO (peak) 15 A PW * b Conditions 0.65 +0.2 -0.1 16.00.2 13.00.2 9.90.2 Lead plate thickness resins 0.8 max a 9.5 min Symbol +0.2 2.450.2 1.0 -0.1 +0.2 17* P1.68 0.1 =28.56 0.55 -0.1 31.5 max Output current Power dissipation 4.80.2 1.70.1 2.7 Parameter Power source voltage Ellipse 3.2 0.15 *3.8 16.4 0.2 8.5 max Absolute Maximum Ratings 31.0 0.2 24.4 0.2 a: Part No. b: Lot No. 250s 5 (Ta=25C) W Without heatsink 40 (Tc=25C) W With infinite heatsink PD Storage temperature Tstg -40 to +125 C Operation temperature Topr -40 to +125 C Junction temperature Tj 150 C Block Diagram * Power GND (D terminal) to -HV (-HV terminal) voltage. 7 Electrical Characteristics Parameter Symbol MOSQ2 MOSQ1 4 Ratings min Power MOS FET output breakdown voltage BVOUT Power MOS FET output leakage voltage IOUT (off) High-side Power MOS FET output on-state voltage VOUT (on) 0.18 Lowside Power MOS FET output on-state voltage VOUT (on) 0.18 typ Unit max 5 Conditions D1 VCC HO1 OUT1 VIN1 V IO=100A 100 A VO=500V 0.26 0.34 V IO=0.4A, VIN=10V 0.26 0.34 V IO=0.4A, VGL=10V 500 2 MOSQ'2 LO2 LO1 GL1 6 -HV 8 VIN2 10 GL2 L GND 9 11 13 17 CPU * Dotted Line: Outside Connection ICC 1 3.0 mA VCC=6 to 15V ICC 2 4.0 mA VCC=10V, VM=400V Operating circuit current ICC 3 4.0 mA VCC=10V, VM=400V Input voltage (High level) VIH Input voltage (Low level) VIL Quiescent circuit current Delay time * 0.8VCC 0.2VCC VCC=6 to 15V V VCC=6 to 15V VCC IN1 t d (on) 2.0 s VCC=10A, VIN=10V, t d (off) 3.0 s VM=85V, IO=0.41A V -40 to +125C 6 VCC Operating voltage 15 Timing Chart V Ignition IN2 HO1 * About delay time LO2 Signal input waveform vs output waveform HO2 1 Highside switch turn-on, turn-off 2 Lowside switch turn-on, turn-off LO1 VIN1 0V 10% VIN1 10% 10% 0V 10% --HV 0V 10% 10% VOUT1 10% 10% td (on) td (on) VOUT2 td (on) * t: t = td (on) - td (off) Measurement Circuit VIN1 VIN2 RL VOUT1 VOUT2 VIN2 VIN1 VM 68 0V -100V 0V Conditions VCC=10V, VIN=10V (pulse) VM=85V IO=0.41A (RL=207) * When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off. td (on) OUT2-GND -400V D2 15 OUT2 MIC MOSQ'1 3 HO2 OSC 400Hz 14 16 High Voltage Full Bridge Drive ICs SLA2403M Electrical Characteristics Quiescent circuit current Quiescent circuit current supplied high voltage 2.5 85C 2.0 25C 1.5 -40C 1.0 0.5 4.0 VIN=0V VCC=10V 2.5 125C 2.0 85C 1.5 25C 1.0 -40C 0.5 0 0 5 10 15 100 400 85C 25C -40C 1 5 10 15 -40C 1.0 0.5 0 2.5 2.0 12V 1.5 10V 9V 1.0 6V 0.5 100 200 300 400 VCC= 15V 2.5 12V 2.0 10V 9V 1.5 1.0 6V 0.5 0 100 200 300 400 500 High voltage VM (V) Gate drive voltage 10 10 Ta=25C VCC=VIN=10V 150C 4 125C 3 85C 2 25C 1 -40C 2 3 Output current 8 6 VCC=6V 4 2 0 -50 0 4 VCC=15V VCC=10V Gate drive voltage VGL (V) Input threshold voltage VIH (V) 5 1 500 3.0 500 Input threshold voltage 6 400 3.5 High voltage VM (V) Output on-state voltage 300 0 0 20 200 Ta=25C VCC= 15V 3.0 Operation voltage VCC (V) 0 100 Operating circuit current 0 0 25C 1.5 500 Operating circuit current ICC3 (mA) 4 2 85C 2.0 High voltage VM (V) Ta=25C 125C 3 125C 2.5 4.0 150C Quiescent circuit current ICC2 (mA) 8 VCC=10V VCC= 6V 6 4 2 0 0 50 100 150 200 0 5 Ambient temperature (C) I OUT (A) Output on-state voltage Input threshold voltage 4 10 15 Input voltage VIN (V) Gate drive voltage 10 7 Input threshold voltage VIL (V) VCC=VIN=10V 3 I O=2A 2 1 I O=0.4A 0 -50 0 50 100 Ambient temperature (C) 150 6 Gate drive voltage VGL (V) Quiescent circuit current ICC2 (mA) 300 Quiescent circuit current supplied high voltage 0 VOUT (ON) (V) 200 3.5 VIN=0V VM=400V 150C 3.0 High voltage VM (V) Quiescent circuit current supplied high voltage 5 3.5 0 0 20 Operation voltage VCC (V) Output on-state voltage VCC=VIN1(2)=10V 150C Operating circuit current ICC3 (mA) 150C 125C Quiescent circuit current ICC2 (mA) Quiescent circuit current ICC1 (mA) VIN=0V 0 Output on-state voltage VOUT (ON) (V) Operating circuit current 3.0 3.0 5 4 VCC=10V 3 2 VCC=6V 8 VCC=10V 6 VCC=6V 4 2 1 0 -50 0 50 100 Ambient temperature (C) 150 0 -50 0 50 100 150 Ambient temperature (C) 69 High Voltage Full Bridge Drive ICs SLA2403M Electrical Characteristics High side switch turn-on, off High side switch turn-on, off 5.0 VM=85V, I O=0.41A VCC=10V 2.0 turn-on 3.0 2.0 turn-on 6 8 10 12 0 -50 14 Operation voltage VCC (V) turn-off 3.0 turn-on 1.0 0 50 100 150 100 150 4 Power derating curve 50 Tc=25C 30 20 10 without heatsink 0 50 100 150 6 8 10 12 14 Operation voltage VCC (V) Safe operating area (Power MOS FET) 100 RDS (on) limited 10 10s 100s 10 1 0.1 1ms 1 10ms 0.1 0.01 0.001 0.001 Ta=25C Single pulse 0.01 0.1 1 Power time (s) Ambient temperature (C) Ambient temperature (C) Transient thermal resistance (C/W) 4.0 0 -50 50 100 VM=85V, I O=0.41A VCC=10V 40 0 0 Transient thermal resistance characteristics 5.0 0 -50 2.0 Ambient temperature (C) Low side switch turn-on, off 2.0 turn-off 1.0 Drain current (A) 4 3.0 turn-on 1.0 0 turn-on, off (s) 4.0 turn-off turn-on, off (s) turn-off 3.0 1.0 PD (W) Ta=25C VM=85V, I O=0.41A 4.0 turn-on, off (s) turn-on, off (s) 4.0 Power derating 5.0 5.0 Ta=25C VM=85V, I O=0.41A 70 Low side switch turn-on, off 10 100 Ta=25C Single pulse 0.01 10 100 Drain to source voltage (V) 1000 71 High Voltage Full Bridge Drive ICs SMA2409M Features External Dimensions (unit: mm) One Package Full Bridge Driver Consisted of High Voltage IC and Power IGBT (4 pieces) High Voltage Driver which accepts direct connection to the input signal line 31.0 0.2 a Absolute Maximum Ratings (Ta = 25C) Symbol Ratings Unit VM 500 V Input voltage VIN 15 V Operation voltage Vcc 15 V Vo Output voltage 500 (10.4) Parameter Power supply voltage 2.70.2 b 10.20.2 4.00.2 Conditions Power GNG to HV +0.2 +0.2 1.16 -0.1 0.65 -0.1 +0.2 V 1.2 0.2 0.55 -0.1 14 * P2.03 0.1= (28.42) (root dimensions) (root dimensions) Output current (DC) Output current (pulses) Io(DC) 7 Io(pulse) 15 a: Part No. b: Lot No. W Tc = 25C 20 j-a 31.2 j-c 6.2 Operating temperature Topr -40 to +105 C Storage temperature Tstg -40 to +150 C Junction temperature Tj 150 C IGBT single pulse avalanche resistance EAS 5 mJ VDD = 30V, L = 1mH, Unclamped, Ic = 3.2A ESD protection ESD 2 kV Human body model (C = 100pF, R = 1.5k) Thermal resistance 31.3 0.2 Single pulse (PW = 50s max.) A 4 PD Power dissipation A CW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Tc = 25C Block Diagram 6 Electrical Characteristics (Ta = 25C) 4 Parameter IGBT output breakdown voltage BVOUT V 570 Io = 0.4A, VIN (or VGL) = 10V 1.3 1.8 V Io = 2.0A, VIN (or VGL) = 10V Icc1 3.0 mA Vcc = 10V, VM = VIN = 0V Icc2 4.0 mA Vcc = 10V, VM = 400V, VIN = 0V Icc3 4.0 mA Vcc = 10V, VM = 400V, VIN1 (or VIN2) = 10V High side Delay time* Low side V 16 V 0.8*Vcc t d (on) 0.6 0.7 0.8 s t d (off) 1.8 2.2 2.6 s t d (on) 0.8 0.9 1.0 s t d (off) 1.3 1.6 1.9 s 2.5 s t d = H/S t d (off) - L/S t d (on) or L/S t d (off) - H/S t d (on) 15 V Ta = -40 to +105C Vcc 9 LO1 VIN1 3 5 -HV VIN2 L GND 7 9 IGBT Q'2 GL2 8 10 11 13 CPU Vcc = 9 to 15V * Dotted Line: Outside Connection Timing Chart VM = 85V, Io = 0.41A Vcc = 10V VIN = 10V (Out Stage = ON) VIN = 0V (Out Stage = OFF) A Drive Example Ignition OSC250Hz VCC IN1 IN2 LO1 LO2 Recommended Operation Range Parameter min td typ 0V -85V -400V Ratings Symbol Dead time -HV-GND max Unit -85V -400V s 5.0 OUT1-GND 0V Conditions Ta = -40 to +105C 0V -85V OUT2-GND -400V * About delay time Signal input waveform vs output waveform 1 Highside switch turn-on, turn-off VIN1 0V 10% 2 Lowside switch turn-on, turn-off VIN1 0V 10% 0V 0V 10% 10% Vout1 td(on) VIN2 RL VIN1 VOUT1 VIN2 10% Vout2 td(off) Measurement Circuit 72 10% Conditions VCC=10V, VIN=10V (pulse) VM=85V IO=0.41A (RL=206) * When pulse signal is inputted to VlN1, VOUT2 VIN1 RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off. 10% 10% 12 OUT2 LO2 Vcc = 9 to 15V VGL td Operating voltage 0.2*Vcc D2 HO2 MIC Vo = 500V V 0.8*Vcc IGBT Q'1 GL1 Io = 100A, Tj = 25C V VIL Low-side IGBT gate drive voltage 2 A VIH IGBT Q2 VCC OUT1 1.2 VOUT (on) Input threshold voltage max Conditions 100 IOUT (off) IGBT output ON voltage Operating circuit current typ Unit 1.0 IGBT output leak current Quiescent circuit current min IGBT Q1 HO1 Ratings Symbol D1 14 High Voltage Full Bridge Drive ICs SMA2409M Electrical Characteristics Quiescent circuit current Quiescent circuit current supplied high voltage 4.0 105C 2.5 25C 2.0 1.5 -40C 1.0 0.5 0 3.5 3.0 150C 2.5 105C 2.0 25C 1.5 -40C 1.0 0.5 0 5 10 15 100 Quiescent circuit current supplied high voltage Quiescent circuit current ICC2 (mA) -40C 1 5 10 15 12V 2.0 10V 9V 1.5 1.0 6V 0.5 4.5V 300 400 4 Input threshold voltage VIL (V) 1.8 1.6 I O=2A 1.2 1.0 I O=0.4A 0.8 100 Ambient temperature (C) 6V 0.5 4.5V 0 100 200 150 300 400 500 VCC=15V 12 6 VCC=9V 4 2 10 8 VCC=9V 6 4 2 0 0 50 100 150 200 0 5 14 7 12 6 VCC=15V 4 3 VCC=9V 2 0 -50 15 Gate drive voltage 8 5 10 Input voltage VIN (V) VCC=15V 10 8 VCC=9V 6 4 2 1 50 1.0 Gate drive voltage Input threshold voltage VCC=VIN=10V 0 10V 9V Ambient temperature (C) 2.0 0.6 -50 1.5 14 I OUT (A) Output on-state voltage 1.4 12V 2.0 High voltage VM (V) 8 0 -50 0.5 Output current 2.5 500 Gate drive voltage VGL (V) 1.0 500 VCC= 15V Ta=25C Input threshold voltage VIH (V) VOUT (ON) (V) 200 VCC=15V 1.5 400 3.0 High voltage VM (V) 150C 105C 25C -40C 300 Operating circuit current 10 3 200 0 100 Input threshold voltage 2 100 Ta=25C VCC= 15V 2.5 0 2.0 1 0.5 High voltage VM (V) 3.0 20 Output on-state voltage 0 -40C 1.0 3.5 Operation voltage VCC (V) VCC=VIN=10V 25C 1.5 0 0 0 105C 2.0 500 Gate drive voltage VGL (V) Quiescent circuit current ICC2 (mA) 25C 0 Output on-state voltage 400 Ta=25C 4 2 300 3.5 125C 3 200 Quiescent circuit current supplied high voltage 150C VIN=0V VM=400V 150C 2.5 High voltage VM (V) Operation voltage VCC (V) 5 3.0 0 0 20 Operating circuit current ICC3 (mA) 0 Output on-state voltage VOUT (ON) (V) VCC=VIN1(2)=10V Operating circuit current ICC3 (mA) 3.0 3.5 VIN=0V VCC=10V 150C VIN=0V Quiescent circuit current ICC2 (mA) Quiescent circuit current ICC1 (mA) 3.5 Operating circuit current 0 50 100 150 Ambient temperature (C) 200 0 -50 0 50 100 150 Ambient temperature (C) 73 High Voltage Full Bridge Drive ICs SMA2409M Electrical Characteristics High side switch turn-on, off 3.5 2.5 3.0 t d (off) 2.0 1.5 1.0 2.0 1.5 2.5 t d (off) 2.0 1.5 1.0 t d (on) t d (off) 1.0 t d (on) 0.5 t d (on) 0.5 0.5 0 9 11 13 0 -50 15 Operation voltage VCC (V) 0 0 50 100 7 150 Ambient temperature (C) Low side switch turn-on, off Transient thermal resistance characteristics 2.5 Transient thermal resistance (C/W) t d (off) 1.5 1.0 t d (on) 0.5 11 13 15 IGBT ASO characteristics 100 2.0 9 Operation voltage VCC (V) 100 10 Collector current (A) 7 turn-on, off (s) Low side switch turn-on, off turn-on, off (s) 3.0 turn-on, off (s) turn-on, off (s) High side switch turn-on, off 1 10 100s 1 1ms 0.1 Ta = 25C Single pulse 10ms 0 -50 0 50 100 150 Power derating curve 5 Power derating PD (W) without heatsink 4 3 2 1 0 50 100 Ambient temperature (C) 74 0.01 0.1 1 Power time (s) Ambient temperature (C) 0 -50 0.01 0.001 150 10 100 0.1 10 100 Collector-emitter voltage (V) 1000 75 Custom ICs Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic devices. Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic IC configuration. Features All semiconductor chips used are Examples of Sanken Automotive Hybrid ICs manufactured by Sanken. Main product lineup consists of power ICs produced out of many Lead frame type multi-chip power IC One-chip power IC Lead frame type power hybrid IC with ceramic substrate High-output high-breakdown voltage IC Simplified integration of custom circuits Distribution of unit functions (Actuators may be built in the device) years' experience of Sanken. Uses monolithic chips with flip-chip construction. Mainly available in miniature transfer-mold packages. Examples of Custom Hybrid IC Products Regulators for alternators Igniters Power supply for microcomputer system Power steering control IC Motor and actuator driver Others Surface-mount power IC 76 Custom ICs External Dimensions (unit: mm) 4.2 4.0 20.2 16.9 19.9 4.0 25.25 9.0 10.0 9.0 5.0 15.6 STA 10pin STA 8pin FM205 MT-100 SMA15pin 4.0 4.0 SLA18pin 16.0 3GR-F 3GR-M 5.5 5.5 19.8 23 16.0 STR-S SPM 5.5 24.2 23 15.6 4.8 31.0 4.8 31.0 4.8 31.0 10.2 10.2 31.0 23 31.0 SLA15pin SLA12pin 16 SMA12pin SMD16pin SPF16pin 12.05 16 15 14 13 12 11 10 9 9 16.1 7.5 6.8 9.8 16 Pin 1 20.0 8 2 3 4 5 6 7 8 2.5 4.0 1 SPF20pin 10.5 4.8 35 SPF24pin +0.1 17.28 1.0 - 0.05 Fin thickness 24 13 7.5 20.2 7.5 0.2 11 10.50.3 20 10.6 14.740.2 13.040.2 10 1 +0.15 0.4 - 0.05 2.50.2 1.270.25 12 +0.15 0.25 - 0.05 2.5 1 77 78 2 Discretes 2-1. Transistors 2-2. MOS FETs ......................................... 2-1-1. Transistors 80 2-2-1. MOS FETs ......................................... 108 ... 108 ...... 80 2SK3710 (60V/70A/6m, Surface-mount) .................................... 81 2SK3711 (60V/70A/6m) .............................. 109 12A) .................................... 82 2SA1488/1488A (-60V/-4A, -80V/-4A) 2SA1567 (-50V/-12A) ..................................... 83 2SK3724 (60V/80A/5m, Surface-mount) ... 110 2SK3800 (40V/70A/6m, Surface-mount) .. 111 ................................... 84 2SK3801 (40V/70A/6m) .............................. 112 2SC3852 (60V/3A) ........................................... 85 2SK3803 (40V/85A/3m, Surface-mount) ... 113 2SA1568 (-60V/ 2SA1908 (-120V/-8A) 2SB1622 (-200V/-15A) 2SC4024 (50V/10A) ........................................ ...................................... 87 ........................................ 88 2SC4065 (60V/12A) 2SC4153 (120V/7A) 2SK3851 (60V/85A/4.7m) .......................... 114 ... 115 FKV460S (40V/60A/9m, Surface-mount) FKV660S (60V/60A/14m, Surface-mount) 89 .................................... 90 SDK06 (525V/3A/0.25, Surface-mount 4-circuits) 117 ........................................ 91 SDK08 (50V/4.5A/0.08, Surface-mount 4-circuits) ........................................... 92 SDK09 (12V/6A/0.2, Surface-mount 4-circuits) 119 ................................. 93 SLA5027 (60V/12A/0.08, 4-circuits) 2SD2382 (605V/6A) 2SD2633 (150V/8A) MN611S (11510V/6A) MN638S (38050V/6A) ................................... 94 .......... 117 118 120 SLA5098 (40V/20A/0.017, 6-circuits) ....... 121 .......... ........... 95 SMA5113 (450V/7A/1.1, 4-circuits) ............................ 96 STA508A (120V/6A/0.2, 4-circuits) ........... 123 96 STA509A (525V/3A/0.25, 4-circuits) SSD103 (655V/6A, Surface-mount) 2-1-2. Transistor Arrays 2-2-2. MOS FET Arrays ........................... 116 .................................. 2SD2141 (38050V/6A) FP812 (-100V/-8A) 86 SDA03 (-60V/-6A, Surface-mount 4-circuits) ....... 122 124 SDA04 (-60V/-6A, Surface-mount 2-circuits) 97 SDC09 (655V/6A, Surface-mount 2-circuits) SLA8004 (60V/12A, -55V/-12A, H-bridge) 98 ......... 99 SPF0001 (11510V/6A, Surface-mount 2-circuits) 100 STA315A (355V/2A, 3-circuits) .................. 101 STA335A (355V/3A, 2-circuits) .................. 102 STA415A (355V/2A, 4-circuits) .................. 103 STA460C (6010V/6A, 2-circuits) .............. 104 STA461C (655V/6A, 2-circuits) ................ 105 STA463C (11510V/6A, 2-circuits) ............ 106 STA464C (655V/6A, 4-circuits) .................. 107 2-3 Thyristors 2-3-1. Reverse Conducting Thyristors .. 125 TFC561D (600V, 430A, 1200A/s) .............. 125 TFC562D (600V, 600A, 1600A/s) .............. 126 .......................... 127 2-4. Diodes 2-4-1. Alternator Diodes .. 128 ................... 129 .......... 130 2-4-2. High-voltage Diodes for Igniter 2-4-3. Power Zener Diodes 2-4-4. General-purpose Diodes 79 Power Transistor 2SA1488/1488A IEBO V(BR) CEO hFE VCE (sat) fT COB VCB = VEB = -6V IC = -25mA VCE = -4V, IC = -1A IC = -2A, IB = -0.2A VCE = -12V, IE = -0.2A VCB = -10V, f = 1MHz 10.0 a b RL () 6 IC (A) -2 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -200 2.54 t on t stg tf IB2 (mA) (s) (s) (s) 200 0.25typ 0.75typ 0.25typ 0.45 2.54 2.2 a) Part No. b) Lot No. (Unit: mm) B C E IC --VCE Characteristics (typ.) -60mA -50mA -40mA -3 -1A 0 0 -1 -2 -3 -4 -5 0 -0.01 -6 -0.05 -0.1 VCE (V) -0.5 0 -1 0 ) tu re tu re p e ra -1.0 -1.5 VBE (V) hFE --IC Temperature Characteristics (typ.) (VC E = -4V) 500 e te m -0.5 IB (A) hFE --IC Characteristics (typ.) (C a s C 125 -2A ) re) atu per -1 IC = -3A IB = -5mA p e ra tem -0.5 -1 - 3 0 C -10mA -2 se -20mA -2 -1.0 e te m VCE (sat) (V) -30mA IC (A) -3 IC (A) ( VC E = -4 V) -4 (C a s -8 IC --VBE Temperature Characteristics (typ.) -1.5 2 5 C A 0m VCE (sat)--IB Characteristics (typ.) (Ca -4 C0.5 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) -12 4.2 2.8 3.3 16.9 ICBO (13.5) V V V A A W C C Test Conditions 4 VCBO VCEO VEBO IC IB PC Tj Tstg Symbol Unit External Dimensions TO220F (full-mold) 8.4 Symbol (Ta = 25C) Ratings Unit 2SA1488 2SA1488A A -100max -100max -60 -80 V A -100max -60min -80min V 40min V -0.5max 15typ MHz 90typ pF 0.8 Ratings 2SA1488 2SA1488A -80 -60 -60 -80 -6 -4 -1 25 (Tc = 25C) 150 -55 to +150 3.9 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) j-a --t (VC E = -4 V ) 200 Characteristics 5 125C 100 (C/W) -30C hFE hFE 25C 100 Typ j-a 50 50 1 20 -0.01 -0.1 -0.5 -1 20 -0.02 -4 -0.1 -1 IC (A) 10 100 IC (A) f T --IE Characteristics (typ.) PC --Ta Derating 30 -10 -5 50 100ms natural air cooling Silicone grease Aluminum heatsink Unit: mm 1m s 10 m s PC (W) 30 -1 -0.5 Without heatsink natural air cooling 20 10 0 0.005 0.01 W ith 0.05 0.1 0.5 1 3 3 5 50 VCE (V) 100 fin 0* 10 10 in 15 -0.1 -0.05 IE (A) 80 20 DC Typ IC (A) fT (MHz) 40 1000 t (ms) Safe Operating Area (single pulse) (VCE = -12V) 60 -4 0.7 1 2 0 0 ite 15 0* 100 he at si 2 nk * 10 0 50 * * 2 50 * 2 Without heatsink 25 50 75 Ta (C) 100 125 150 Power Transistor 2SA1567 Test Conditions VCB = -50V VEB = -6V IC = -25mA VCE = -1V, IC = -6A IC = -6A, IB = -0.3A VCE = -12V, IE = -0.5A VCB = -10V, f = 1MHz ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Ratings -100max -100max -50min 50min -0.35max 40typ 330typ (Ta=25C) Unit A A V External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 V MHz pF a b 2.6 VCC (V) -24 RL () 4 IC (A) -6 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -120 1.35 1.35 0.85 IB2 t on t stg tf (mA) (s) (s) (s) 120 0.4typ 0.4typ 0.2typ 2.54 (13.5) Typical Switching Characteristics (common emitter) 0.45 2.54 2.2 a) Part No. b) Lot No. (Unit: mm) B C E IC --VCE Characteristics (typ.) -10 -5 0 -2 -6 -10 -100 VCE (V) -0.2 -0.4 j-a --t (VC E = -1V ) 500 ure ) se t emp era C (C ture ase ) te m p e ra tu re ) C (C a -0.6 -0.8 -1.0 -1.2 VBE (V) hFE --IC Temperature Characteristics (typ.) (VC E = -1V) Characteristics 4 125C Typ 25C 100 1 j-a 100 (C/W) hFE - 30C hFE 0 0 -1000 -3000 IB (mA) hFE --IC Characteristics (typ.) 500 25 12 0 -4 -2 -1A -5mA -3 (Ca -3A -10mA -2 -4 -9A -30 IC = -12A -0.5 -6A -1 rat -20mA pe -4 -6 tem -40mA -8 se -6 -1.0 IC (A) -60mA -2 ( VC E = -4 V) -12 -100mA -8 0 IC --VBE Temperature Characteristics (typ.) 5C 0mA -15 VCE (sat) (V) IC (A) -10 VCE (sat)--IB Characteristics (typ.) -1.5 I -20B = 0m A -12 C0.5 16.9 Symbol 4 Electrical Characteristics Unit V V V A A W C C 8.4 Ratings -50 -50 -6 -12 -3 35 (Tc = 25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta = 25C) 0.5 50 50 30 -0.02 30 -0.02 -0.1 -1 -10 -0.1 -1 IC (A) 0.3 Safe Operating Area (single pulse) (VCE = -12V) 1000 35 10 natural air cooling Silicone grease Aluminum heatsink Unit: mm 30 0m s s DC -5 s m -10 Typ 100 PC --Ta Derating -30 10 ite 100 150 *1 50 0 * *2 2 nk 20 10 si Without heatsink natural air cooling at -0.5 he PC (W) 20 fin -1 in 30 ith IC (A) W fT (MHz) 10 t (ms) 1m 40 1 IC (A) f T --IE Characteristics (typ.) 50 -10 * 10 50 * 50 * 2 -0.1 0 0.05 0.1 1 IE (A) 12 -0.05 -3 -5 -10 -50 VCE (V) -100 2 0 0 Without heatsink 25 50 75 100 125 150 Ta (C) 81 Power Transistor 2SA1568 ICBO IEBO V(BR) CEO hFE VCE (sat) VFEC fT COB Ratings -100max -60max -60min 50min -0.35max -2.5max 40typ 330typ (Ta=25C) Unit A mA V External Dimensions TO220F (full-mold) 10.0 V V MHz pF a b RL () 4 IC (A) -6 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -120 IB2 t on t stg tf (mA) (s) (s) (s) 120 0.4typ 0.4typ 0.2typ 2.54 0.45 2.54 2.2 a) Part No. b) Lot No. B C E IC -- VCE Characteristics (typ.) I -20 B = 0m A -12 -10 VCE (sat) -- IB Characteristics (typ.) ( VC E = -1 V) -12 -150 -100mA -10 -1.0 0 -1 -2 -3 -4 -5 0 -7 -10 -6 -100 VCE (V) hFE -- IC Characteristics (typ.) 300 0 -0.2 -0.4 125C ) tu re p e ra s e te m C (C a 25 -30 -1.0 -1.2 j-a -- t Characteristics 4 -30C (C/W) 1 j-a hFE 10 10 -0.8 25C 100 hFE (VC E = -1V ) 300 Typ -0.6 VBE (V) hFE -- IC Temperature Characteristics (typ.) 100 re) ure ) 0 -1000 -3000 IB (mA) (VC E = -1V) atu rat -2 12 0 per pe -10mA -2 tem -4 -1A C (C ase -0.5 -20mA -6 -3A tem -4 -9A -6A se -40mA (Ca -6 -8 IC = -12A 5C -60mA IC (A) VCE (sat) (V) -8 IC (A) (Unit : mm) IC -- VBE Temperature Characteristics (typ.) -1.4 mA C0.5 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) -24 4.2 2.8 3.3 16.9 Test Conditions VCB = -60V VEB = -6V IC = -25mA VCE = -1V, IC = -6A IC = -6A, IB = -0.3A IECO = -10A VCE = -12V, IE = 0.5A VCB = -10V, f = 1MHz (13.5) Symbol 4 Electrical Characteristics Unit V V V A A W C C 8.4 Ratings -60 -60 -6 12 -3 35 (Tc=25C) 150 -55 to +150 0.8 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 3.9 Absolute Maximum Ratings (Ta=25C) 0.5 2 -0.02 -0.1 -1 IC (A) 2 -0.02 -10 -12 f T -- IE Characteristics (typ.) -1 -10 -12 IC (A) Safe Operating Area (single pulse) (VCE = -12V) 50 -0.1 0.3 -10 10 DC 0m s s natural air cooling Silicone grease Aluminum heatsink Unit: mm 30 s -5 m 10 ite 0* 10 50 * 50 * 2 -0.1 0 0.05 0.1 1 IE (A) 10 -0.05 -3 -5 -10 -50 VCE (V) -100 2 0 * 15 nk 20 si 150 at Without heatsink natural air cooling he PC (W) 20 fin -1 in 30 ith IC (A) W fT (MHz) 1000 35 -0.5 82 100 PC -- Ta Derating -30 Typ 10 t (ms) 1m 40 1 100 2 * 10 0*2 Without heatsink 0 25 50 75 Ta (C) 100 125 150 Power Transistor 2SA1908 External Dimensions FM100 (T03PF) 0.8 0.2 15.6 0.2 V MHz pF 3.30.2 a b * Rank: O (50 to 100), P (70 to 140), Y(90 to 180) Typical Switching Characteristics (common emitter) VCC (V) -40 RL () 10 IC (A) -4 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -400 5.50.2 3.450.2 3.0 ICBO IEBO V(BR) CEO hFE * VCE (sat) fT COB (Ta=25C) Unit A A V Ratings -10max -10max -120min 50min -0.5max 20typ 300typ 5.5 Test Conditions VCB = -120V VEB = -6V IC = -50mA VCE = -4V, IC = -3A IC = -3A, IB = -0.3A VCE = -12V, IE = 0.5A VCB = -10V, f = 1MHz 3.3 Symbol 1.6 Electrical Characteristics Unit V V V A A W C C 9.50.2 Ratings -120 -120 -6 -8 -3 75 (Tc=25C) 150 -55 to +150 1.75 16.2 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 23.0 0.3 Absolute Maximum Ratings (Ta=25C) 0.8 2.15 1.05 5.450.1 IB2 t on t stg tf (mA) (s) (s) (s) 400 0.14typ 1.40typ 0.21typ +0.2 -0.1 5.450.1 1.5 B 4.4 1.5 C E +0.2 0.65 3.35 -0.1 a) Part No. b) Lot No. (Unit : mm) VCE (sat) -- IB Characteristics (typ.) IC -- VCE Characteristics (typ.) A -100m -75mA -6 -2 -3 0 -0.2 -0.4 0 -1.0 0 (VC E = -4V) 200 tu re atu p e ra e te m C (C as -1.0 -1.5 VBE (V) hFE -- IC Temperature Characteristics (typ.) hFE -- IC Characteristics (typ.) -30 -0.5 IB (mA) VCE (V) re) re) atu per 125 -4 - 4A -2A -0.6 -0.8 j-a -- t (VC E = -4V ) 300 Characteristics 4 125C Typ 25C hFE hFE 100 100 50 -30C (C/W ) -1 0 1 j -a 0 -2 IC = - 8A IB=-10mA per tem se -1 -2 0 -4 se t em -25mA IC (A) -50mA -4 ) -2 VCE (sat) (V) IC (A) -6 (Ca -3 -1 C (C a 50 0 -2 ( VC E = -4 V) -8 A m 50 C m A A 0m IC -- VBE Temperature Characteristics (typ.) -3 25 -8 0.5 50 30 -0.02 -0.1 -0.5 -1 30 -0.02 -5 -8 0.2 -0.1 IC (A) -0.5 -1 10 100 IC (A) (VCE = -12V) 30 PC -- Ta Derating 80 -20 10 -10 Typ 1000 2000 t (ms) Safe Operating Area (single pulse) f T -- IE Characteristics (typ.) m DC -5 10 s 60 0m s W it 20 te 40 he at si nk PC (W) ni IC (A) fi -1 in fT (MHz) h 10 -0.5 20 Wit h ou t h e a t sin k n a t u ra l a ir c oolin g 0 0.02 1 -5 -8 0.05 0.1 0.5 IE (A) 1 5 8 -0.1 -5 -10 -50 VCE (V) -100 -150 3.5 0 Wit h ou t h e a t sin k 0 25 50 75 100 125 150 Ta (C) 83 Power Transistor 2SB1622 min max -100 -100 Unit A VCB = - 200V VEB = - 5V A IC = - 30mA - 200 V VCE = - 4V, IC = -10A 5000 30000 IC = -10A, IB = -10mA -2.5 V IC = -10A, IB = -10mA -3.0 V VCE = -12V, IE = 2A 60 MHz VCB = -10V, f = 1MHz pF 270 Rank: O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) * ICBO IEBO VCEO hFE* VCE(sat) VBE(sat) fT COB 3.3 0.2 a b 1.75 0.15 2.150.15 IC -- VCE Characteristics (typ.) +0.2 IB1 (mA) -10 VCE (sat) ( V ) IB = -0.3mA 5 -2 -4 a) Part No. b) Lot No. B C E (Unit : mm) VCE (sat) -- IB Temperature Characteristics (typ.) 125C 75C 25C - 30C IC = - 15A IC = - 10A IC = - 5A -1 0 -0.2 -1 -10 VCE ( V ) -1 0 -0.1 -100 -200 -1 -10 -100 -200 IB (mA) IC -- VBE Temperature Characteristics (typ.) (VCE = - 4V) 15 -3 IC = - 5A -2 IB (mA) VCE (sat) -- IB Temperature Characteristics (typ.) 3.350.2 -3 -2 -6 +0.2 0.65 -0.1 15.60.2 1.5 4.4 1.5 IB2 t on t stg tf (mA) (s) (s) (s) 10 0.4typ 3.6typ 1.0typ VCE (sat) ( V ) -3 IC (A) -0.5mA 0 VBB2 (V) 5 VCE (sat) -- IB Characteristics (typ.) -0.8mA 10 0 VBB1 (V) -10 -1.5mA -1.0mA .0 -50mA -15mA -5.0mA IC (A) -10 -3 m A 15 RL () 4 0.8 1.05 -0.1 5.450.1 5.45 0.1 Typical Switching Characteristics VCC (V) - 40 5.5 0.2 3.45 0.2 3.0 Test Conditions External Dimensions 23.0 0.3 Symbol (Ta=25C) Ratings typ 16.2 Electrical Characteristics Unit V V V A A W C C 0.8 5.5 0.2 Ratings -200 -200 -5 -15 -1 85 (Tc=25C) 150 -55 to +150 9.5 0.2 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 1.6 3.3 Absolute Maximum Ratings (Ta=25C) hFE -- IC Characteristics (typ.) 100000 IC = -10A VCE = - 4V 50000 125C 75C 25C - 30C 5 -100 -200 -10 -1 -2 hFE ton* tstg * tf (sec) 50C 25C 0C -30C -55C -1 -5 -10 -20 tstg 1 tf 0.5 Characteristics 1.0 0.5 0.1 -0.5 -1 -5 -10 -20 1 10 80 10 0m 60 at nk si 5 10 40 30 Without heatsink natural air cooling -0.1 -0.05 -3 he -0.5 50 ite -1 fin D. in IC (A) 70 s C. 20 90 ith W 40 1000 2000 PC -- Ta Derating s -10 Ta = 25C (single pulse) m 10 60 100 t (sec) Safe Operating Area -5 fT (MHz) j-a -- t ton 0.1 -0.2 -50 -30 IE (A) -20 Ta = 25C VCC = -40V - IB1 = IB2 = 10mA 5 80 0.5 1 -10 3.0 IC (A) f T -- IE Characteristics (typ.) 0.1 10 IC (A) 84 70 -5 -3 ton* tstg *t f -- IC Characteristics (typ.) VCE = - 4V 5000 0 0.02 -1 VBE (V) 10000 -0.5 -0.5 IC (A) (C/W) -1 150C 125C 100C 75C 1000 -0.2 1000 -0.2 0 hFE -- IC Temperature Characteristics (typ.) 50000 5000 50C 25C 0C - 30C - 55C IB (mA) 100000 10000 j-a 0 -0.2 Ta=150C 125C 100C 75C PC (W) -1 hFE 10 IC (A) VCE (sat) ( V ) typ -2 20 10 Without heatsink 0 -10 -100 VCE ( V ) -500 0 25 50 75 Ta (C) 100 125 150 Power Transistor 2SC3852 (Ta=25C) Unit A A V Ratings 10max 100max 60min 500min 0.5max 15typ 50typ External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) 20 RL () 20 IC (A) 1.0 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 15 IB2 t on t stg tf (mA) (s) (s) (s) -30 0.8typ 3.0typ 1.2typ 2.54 (13.5) 3.9 ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Test Conditions VCB = 80V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 2A, IB = 50mA VCE = 12V, IE = -0.2A VCB = 10V, f = 1MHz 8.4 Symbol 4 Electrical Characteristics Unit V V V A A W C C Ratings 80 60 6 3 1 25 (Tc=25C) 150 -55 to +150 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta=25C) 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit : mm) IC -- VCE Characteristics (typ.) VCE (sat) -- IB Characteristics (typ.) 3 mA =1 3 1.0 2 ( VC E = 4 V) 8mA 2 IB IC -- VBE Temperature Characteristics (typ.) 1.5 0 1 2 3 4 5 0 0.001 0.005 0.01 VCE (V) 0.05 0.1 re ) (C a s e te mp e ra tu ) ure s e te m 25C - 3 0 C 0.5 0 1.0 1.1 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE=4V) 2000 tu re rat 0 0.5 1 IB (A) hFE -- IC Characteristics (typ.) (C a C 125 2A IC =1A 6 p e ra pe 1 3A 0.5mA 0 tem 0.5 1mA se 1 (Ca 2mA IC (A) VCE (sat) (V) IC (A) 3mA ) 5mA 2 j-a -- t (VC E = 4V ) 2000 Characteristics 5 125C 1000 25C 500 -30C j-a 500 (C/W) Typ hFE hFE 1000 100 0.01 0.1 0.5 1 3 100 0.01 0.1 IC (A) 3 1 10 100 PC -- Ta Derating 30 10 1 k in ts a he 0.5 ite fin in PC (W) ith IC (A) 20 W DC 10 10 ms 0m s s 1m 20 Typ VCB = 10V IE = -2A 1000 t (ms) Safe Operating Area (single pulse) (VCE = 12V) 5 fT (MHz) 1 0.5 IC (A) f T -- IE Characteristics (typ.) 30 0.5 1 10 10 Without heatsink natural air cooling 0.1 0 -0.005 -0.01 -0.05 -0.1 IE (A) -0.5 -1 -2 0.05 3 Without heatsink 5 10 50 VCE (V) 100 0 0 50 100 150 Ta (C) 85 Power Transistor 2SC4024 Electrical Characteristics ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB (Ta=25C) Unit A A V Ratings 10max 10max 50min 300 to 1600 0.5max 24typ 150typ External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 V MHz pF 16.9 Test Conditions VCB = 100V VEB = 15V IC = 25mA VCE = 4V, IC = 1A IC = 5A, IB = 0.1A VCB = 12V, IE = -0.5A VCB = 10V, f = 1MHz 4 Symbol Unit V V V A A W C C 8.4 a b 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) 20 RL () 4 IC (A) 5 IB1 (A) 0.1 IB2 (A) -0.1 t on (s) 0.5typ t stg (s) 2.0typ tf (s) 0.5typ 2.54 (13.5) Ratings 100 50 15 10 3 35 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta=25C) 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) VCE (sat) -- IB Characteristics (typ.) 10 IC -- VBE Temperature Characteristics (typ.) IB = 35mA 30mA 8 ( VC E = 4 V) 10 1.5 8 4 0 0.002 6 0.1 1 ) ure ) re) rat tu re atu p e ra s e te m tem se C (C a 0.5 1.0 1.2 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VC E = 4V) per pe 0 0 2 IB (A) hFE -- IC Characteristics (typ.) C ( Ca -30 0.01 VCE (V) 1000 2 5A 3A IC = 1A 25 5mA 2 e t em 10A 2 0 0 as 4 0.5 (C 10mA 4 6 5C 15mA 1.0 12 20mA 6 IC (A) VCE (sat) (V) IC (A) 25mA j-a -- t (VC E = 4V ) 1000 Characteristics 4 25C hFE C -30 1 j-a hFE 500 (C/W) 125C Typ 500 0.5 100 0.02 0.1 0.5 1 5 10 100 0.02 0.1 0.5 IC (A) 5 10 0.3 1 10 IC (A) f T -- IE Characteristics (typ.) 100 PC -- Ta Derating 40 30 1m 10 ite he 150 -10 5 50 10 VCE (V) 100 2 0 * 15 0 *2 1 50 * 50 * 2 00 * 10 0 *2 nk -5 10 Without heatsink natural air cooling si -1 at -0.5 0.2 3 fin PC (W) 20 in IC (A) ith DC W fT (MHz) 30 1 IE (A) 86 s s 5 0.5 0 -0.05 -0.1 m 10 0m 10 natural air cooling Silicone grease Aluminum heatsink Unit: mm s 10 Typ 20 1000 t (ms) Safe Operating Area (single pulse) (VCE = 12V) 30 1 Without heatsink 0 25 50 75 Ta (C) 100 125 150 Power Transistor 2SC4065 ICBO IEBO V(BR) CEO hFE VCE (sat) VFEC fT COB (Ta=25C) Unit A mA V Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ External Dimensions TO220F (full-mold) 10.0 V V MHz pF a b RL () 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.12 C0.5 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) 24 4.2 2.8 3.3 16.9 Test Conditions VCB = 60V VEB = 6V IC = 25mA VCE = 1V, IC = 6A IC = 6A, IB = 1.3A VECO = 10A VCE = 12V, IE = -0.5A VCB = 10V, f = 1MHz 2.54 IB2 t on t stg tf (A) (s) (s) (s) -0.12 0.6typ 1.4typ 0.4typ (13.5) Symbol 4 Electrical Characteristics (Ta=25C) Unit V V V A A W C C 8.4 Ratings 60 60 6 12 3 35 (Tc=25C) 150 -55 to +150 0.8 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 3.9 Absolute Maximum Ratings 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) mA 0 15 ( VC E = 1 V) 12 100mA 10 1.0 0 0 2 4 0.1 VCE (V) 0 3 50 C 25 C 0 3 - 10 10 5 3 0.02 10 12 0.1 1 IC (A) 10 12 0.2 1 10 tu re p e ra 40 natural air cooling Silicone grease Aluminum heatsink Unit: mm 10 DC 30 20 ite he at si 0.5 10 Without heatsink natural air cooling 0.1 -5 -10 -12 0.05 3 5 10 50 VCE (V) 100 2 0 nk 10 fin 1 in PC (W) s ith IC (A) 0m W fT (MHz) 20 s 5 s m 10 10 Typ 1000 PC -- Ta Derating 30 1m -1 e te m 100 t (ms) Safe Operating Area (single pulse) (VCE = 12V) IE (A) (C a s 0.5 IC (A) f T -- IE Characteristics (typ.) -0.5 - 3 0 C 1 j-a hFE 50 0 -0.05 -0.1 ) rat Characteristics 5 C 100 30 1.0 1.1 0.5 125 100 1 5C j-a -- t (VCE = 1V) 400 Typ 0.1 0 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = 1V) 400 5 3 0.02 12 2 IB (A) hFE -- IC Characteristics (typ.) hFE 1 re) ure ) 0 0.005 0.01 6 6A 3A IC = 1A 9A (C/W) 2 atu pe 4 12A IB = 10mA per tem 20mA 4 6 0.5 tem 6 8 C (C ase 40mA 25 VCE (sat) (V) 8 se 60mA IC (A) IC -- VBE Temperature Characteristics (typ.) 1.3 (Ca 10 VCE (sat) -- IB Characteristics (typ.) IC (A) 20 0m A 12 150 * 15 0* 2 1 50 * 50 * 2 00 * 10 0*2 Without heatsink 0 25 50 75 100 125 150 Ta (C) 87 Power Transistor 2SC4153 External Dimensions TO220F (full-mold) 10.0 V V MHz pF a b RL () 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 C0.5 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) 50 4.2 2.8 3.3 16.9 ICBO IEBO V(BR) CEO hFE VCE (sat) VBE (sat) fT COB (Ta=25C) Unit A A V Ratings 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ (13.5) Test Conditions VCB = 200V VEB = 8V IC = 50mA VCE = 4V, IC = 3A IC = 3A, IB = 0.3A IC = 3A, IB = 0.3A VCE = 12V, IE = -0.5A VCB = 10V, f = 1MHz 8.4 Symbol Unit V V V A A W C C 0.8 Ratings 200 120 8 7 (pulse 14) 3 30 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 4 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 2.54 IB2 t on t stg tf (A) (s) (s) (s) -0.6 0.5max 3max 0.5max 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) 7 VCE (sat) -- IB Characteristics (typ.) mA 200 5 IC -- VBE Temperature Characteristics (typ.) 3 ( VC E = 4 V) 7 0mA 15 6 A 100m 1 2 3 0.1 VCE (V) 1 re ) rat j-a -- t (VCE = 4V) 300 ra tu atu pe e te m pe (C a s - 3 0 C 0.5 1.0 1.1 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = 4V) 300 per tem 0 0 2 IB (A) hFE -- IC Characteristics (typ.) re) ure ) 0 0.005 0.01 4 1 5A 3A IC = 1A 0 C (C a 5C 1 0 se t em se 2 IB =10mA 25 2 3 1 (Ca 20mA 4 12 3 5 2 IC (A) 4 60mA 40mA VCE (sat) (V) IC (A) 5 Characteristics 5 125C Typ 100 C -30 20 0.01 0.1 0.5 1 j-a 50 50 20 0.01 5 7 0.1 f T -- IE Characteristics (typ.) 1 5 7 0.5 0.2 1 10 20 20 W 0.1 -0.1 -1 IE (A) 88 -5 0.05 5 10 50 VCE (V) 100 200 2 0 2 00 nk Without heatsink natural air cooling 0* *1 si 50 * 50 * 2 15 100 at 0* he 15 10 10 ite 0.5 fin 1 in PC (W) ith IC (A) natural air cooling Silicone grease Aluminum heatsink Unit: mm s 10m 20 30 0 s 5 30 1000 PC -- Ta Derating 10 10 Typ 0 -0.01 100 t (ms) Safe Operating Area (single pulse) (VCE = 12V) 40 0.5 1 IC (A) IC (A) fT (MHz) (C/W) hFE hFE 25C 100 *2 Without heatsink 0 25 50 75 Ta (C) 100 125 150 Power Transistor 2SD2141 Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA ICBO IEBO V(BR) CEO hFE VCE (sat ) Ratings 10max 20max 330 to 430 1500min 1.5max (Ta=25C) Unit A A V External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 Symbol 4 Electrical Characteristics Unit V V V A A W C C V a b 2.6 0.8 Ratings 38050 38050 6 6 (pulse 10) 1 35 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 8.4 Absolute Maximum Ratings (Ta=25C) 2.54 (13.5) 1.35 1.35 0.85 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) VCE (sat) -- IB Characteristics (typ.) 150mA 120mA ( VC E = 4 V) 10 A A 18m 4mA 2 4 0 6 0.2 0.5 1 5 VCE (V) 10 (VCE = 2V) 10000 5000 ra tu ure rat pe tem 2.0 2.4 VBE (V) hFE -- IC Temperature Characteristics (typ.) j-a -- t (VCE = 2V) 10000 5000 Typ - 3 0 C C ( Ca 25 1.0 IB (mA) hFE -- IC Characteristics (typ.) re ) e) 0 0 50 100 200 e te m pe se (C C 5 0 (C a s 1A 12 0 ) ur mp 1 5 at IC = 7A 5A 3A as IB = 1mA er VCE (sat) (V) 5 2 te A 90m 0mA 6 e 20m 2mA IC (A) IC -- VBE Temperature Characteristics (typ.) 3 IC (A) 10 Characteristics 5 25 (C/W) 1000 500 C 5 -5 C 1 j-a hFE hFE 5C 12 1000 500 100 50 0.5 100 50 10 0.02 0.1 0.5 1 5 20 0.02 10 0.1 0.5 1.0 IC (A) 10 0.1 1 10 100 IC (A) f T -- IE Characteristics (typ.) PC -- Ta Derating 40 20 natural air cooling Silicone grease Aluminum heatsink Unit: mm 10 DC 30 ite he PC (W) 20 fin IC (A) in 0.5 ith 1 20 W at fT (MHz) 1ms 5 30 s 10m s 0m 10 Typ 1000 t (ms) Safe Operating Area (single pulse) (VCE = 12V) 40 5 si 0 -0.01 Without heatsink natural air cooling -0.05 -0.1 -0.5 -1 IE (A) -5 0.01 1 150 * 10 0.05 nk 0.1 10 50 * 50 * 2 100 * 5 10 50 100 VCE (V) 500 2 0 Without heatsink 0 25 50 150 * 100 2 *2 75 100 125 150 Ta (C) 89 Power Transistor 2SD2382 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b (Ta=25C) Unit A A V Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 V V mJ 16.9 Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse 8.4 Symbol Unit V V V A A W C C a b 2.6 0.8 1.35 1.35 0.85 Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 IB2 (mA) -30 t on (s) 0.25 t stg (s) 0.8 tf (s) 0.35 2.54 (13.5) Ratings 655 655 6 6 (pulse 10) 1 30 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 4 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) 10 VCE (sat) -- IB Temperature Characteristics (typ.) 20mA IC -- VBE Temperature Characteristics (typ.) (IC = 1.5A) 0.75 6 30mA 5 8 5mA 4 3mA 2 0 4 0.5 IC (A) VCE (sat) (V) IC (A) 10mA 6 Ta = -55C 25C 75C 125C 0.25 2 IB = 1mA 0 1 2 3 4 Ta=55C 25C 75C 125C 3 1 0 5 1 5 10 VCE (V) 50 100 0 400 0 0.5 1.0 IB (mA) hFE -- IC Characteristics (typ.) (VCE = 1V) 5000 1.5 VBE (V) hFE -- IC Temperature Characteristics (typ.) j-a -- t (VCE = 1V) 5000 Characteristics 5 1000 500 Ta = -55C 25C 75C 125C 100 100 0.05 0.1 0.5 1 5 10 50 30 0.01 0.05 0.1 0.5 IC (A) 5 10 0.3 1 5 10 50 100 PC -- Ta Derating 20 30 natural air cooling Silicone grease Aluminum heatsink Unit: mm c mse 0.5 ec 1ms c e 10 10 0m 10 D. C at si nk IC (A) Without heatsink natural air cooling 5 he 10 0.5 ite 15 0 100 * 150 * *1 00 2 *2 50 * 5 0*2 fin ) in C 1 20 ith 25 W c = se (T c 10 ms 5 Typ 15 500 1000 t (ms) Safe Operating Area (single pulse) (VCE = 1V) 25 20 1 IC (A) f T -- IE Characteristics (typ.) 30 0.5 PC (W) 50 30 0.01 1 j-a hFE hFE 500 fT (MHz) (C/W) Typ 1000 Without heatsink 0 -0.01 0.1 -0.05 -0.1 -0.5 -1 IE (A) 90 -5 -10 1 5 10 VCE (V) 50 100 0 0 50 100 Ta (C) 150 Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE (sat) VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25C) Unit A mA V External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 V V 16.9 Symbol 4 Electrical Characteristics 8.4 Unit V V V A A a b 2.6 C C 1.35 1.35 0.85 2.54 2.54 (13.5) PC Ratings 200 150 6 8 1 35 (Tc=25C) 2 (Ta=25C, No Fin) 150 -55 to +150 0.8 Symbol VCBO VCEO VEBO IC IB 3.9 Absolute Maximum Ratings (Ta=25C) 0.45 2.2 B C E a) Part No. b) Lot No. (Unit: mm) 91 Power Transistor FP812 ICBO IEBO VCEO hFE VCE (sat) (Ta=25C) Unit A A V Ratings 10max 10max -120min 70min -0.3max External Dimensions TO220F (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) -12 RL () 4 IC (A) -3 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -30 4.2 2.8 3.3 C0.5 16.9 Test Conditions VCB = -120V VEB = -6V IC = -50mA VCE = -4V, IC = -3A IC = -3A, IB = -0.3A 2.6 IB2 (mA) 30 t on (s) 2.5 t stg (s) 0.4 tf (s) 0.6 1.35 1.35 0.85 2.54 (13.5) Symbol 4 Electrical Characteristics Unit V V V A A W C C 8.4 Ratings -120 -120 -6 -8 (pulse -12) -3 35 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta=25C) 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) -8 -3 00 mA A 0m 0 -2 VCE (sat) -- I B Characteristics (typ.) -100mA A 0m 5 -1 IC -- VBE Temperature Characteristics (typ.) -2 -75mA -6 -6 VCE (sat) (A) IC (A) -4 -25mA -2 -1 Ic = -1A IB = -10mA 0 -1 -2 -3 IC (A) Ic = -5A -50mA 0 (VBE = -4V) -8 Ic = -3A 0 -5 -4 -10 -4 Tc = -40C 25C 75C 125C -2 -50 -100 VCE (V) 0 -500 -1000 -2000 0 -0.5 IB (mA) hFE -- IC Characteristics (typ.) hFE -- IC Temperature Characteristics (typ.) (VCE = -4V) 500 -1.0 -1.5 VBE (V) j-a -- t (VCE = -4V) 500 Characteristics 50 ) C 100 75C 25C 100 j-a hFE hFE Typ (C/W) Tc = 125C -55C 50 30 -0.01 30 -0.01 -0.5 -1 -5 -8 NO -0.05 -0.1 -0.5 IC (A) -1 -5 -8 -12 -10 0.1 0.05 0.0002 0.001 0.01 0.1 se c (T c 20 natural air cooling Without heatsink 0* 2 nk 100 si 10 20 at 0* -0.5 he 20 ite PC (W) fin C) in 5 -1 ith =2 30 W IC (A) 100 natural air cooling Silicone grease Aluminum heatsink Unit: mm c se c m se 0m 10 C fT (MHz) 10 PC -- Ta Derating 1m 10 D. 20 10 1 40 -5 Typ Tc = 25C t (sec) Safe Operating Area (single pulse) (VCE = 12V) 30 25 1 0.5 IC (A) f T -- IE Characteristics (typ.) Fin = (Ta Single Pulese 50 -0.05 -0.1 10 5 * 10 0*2 Without heatsink 0 0.01 0.05 0.1 0.5 IE (A) 92 1 5 10 -0.1 -3 -5 -10 -50 VCE (V) -100 -150 0 0 50 100 Ta (C) 150 Power Transistor MN611S C C VCB=105V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.2A, IB=12mA I FEC=6A L=10mA max 115 800 0.08 1.25 10 10 125 1500 0.12 1.5 105 400 Unit A A V V V mJ 45 4.440.2 10.20.3 (1.4) ICBO IEBO VCEO hFE VCE (sat) VFEC ES/B min +0.3 Test Conditions 1.30.2 a 1.6 b +0.2 (1.5) Tj Tstg W Symbol External Dimensions TO220S (Ta=25C) Ratings typ Typical Switching Characteristics VCC (V) 12 RL () 12 VBB1 (V) 10 VBB2 (V) -5 IC (A) 1 +0.2 0.86 -0.1 0.40.1 1.20.2 tf IB2 ton tstg (mA) (s) (s) (s) -30 0.2typ 5.7typ 0.4typ IB1 (mA) 30 0.1 -0.1 1.270.2 +0.3 PC Electrical Characteristics Unit V V V A A 10.0 -0.5 Ratings 11510 11510 6 6 (pulse 10) 1 50 (Tc=25C) 1.2 (Ta=25C, No Fin) 150 -55 to +150 3.0 -0.5 Symbol VCBO VCEO VEBO IC IB 8.60.3 Absolute Maximum Ratings (Ta=25C) 2.540.5 2.540.5 a) Part No. b) Lot No. IC -- VCE Characteristics (typ.) (Ta = 25C) 8 (Unit: mm) VCE (sat) -- IB Characteristics (typ.) (Ta = 25C) 0.75 7 30mA 6 20mA VCE (sat) (V) IC (A) IC = 2A 10mA 5 5mA 4 3 3mA 0.5 IC = 1.2A 0.25 2 IB = 1mA 1 IC = 0.5A 0 0 0 1 2 3 4 5 0 6 10 VCE (V) 100 1000 IB (mA) VCE (sat) -- IB Temperature Characteristics (typ.) IC -- VBE Temperature Characteristics (typ.) (IC = 1.2A) 0.75 IFEC -- VFEC Temperature Characteristics (typ.) (VCE = 1V) 7 7 6 Ta = 150C 125C 75C 25C -55C 0.5 Ta = 150C 125C 75C 25C -55C 0.25 0 4 3 100 2 1 1 0 0 0.5 IB (mA) typ 10 Ta = 150C 125C 75C 25C -55C 30 0.01 0.1 Ic (A) j-c * j-a -- t Characteristics (Single pulse) tstg Ta = 25C VCC = 12V IB1 = -IB2 = 30mA 1 tf ton 0.1 1 0 10 1 j-a FR4 (70 * 100 * 1.6mm) Use substrate 3 PT -- Ta Derating (Ta = 25C) 20 2 Ic (A) Safe Operating Area (Single pulse) (Tc = 25C) 1.5 10 Ic (A) 50 1.0 ton* tstg *t f -- IC Characteristics (typ.) (VCE = 1V) 5000 hFE hFE 1 0.1 0.5 VFEC (V) hFE -- IC Temperature Characteristics (typ.) 100 30 0.01 60 10 50 j-c 1 PC (W) 40 IC (A) (C/W) 0 1000 100 j-c * j-a 1.5 ton * tstg * tf (sec) (Ta = 25C) (VCE = 1V) 5000 1000 1.0 VBE (V) hFE -- IC Characteristics (typ.) 10 3 2 1000 Ta = 150C 125C 75C 25C -55C 4 0 10 0 5 IFEC (A) 5 IC (A) VCE (sat) (V) 6 PT =50s PT =500s PT =1ms PT =10ms 1 30 20 0.1 0.001 Without heatsink 0.01 0.1 t (s) 1 10 10 0 0.1 1 10 VCE (V) 100 200 0 25 50 75 100 Ta (C) 125 150 93 Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.440.2 10.20.3 1.30.2 V a +0.3 ICBO IEBO V(BR) CEO hFE VCE (sat) (Ta=25C) Unit A mA V Ratings 10max 20max 330 to 430 1500min 1.5max 1.6 b +0.2 (1.5) Symbol (1.4) Electrical Characteristics Unit V V V A A W C C 10.0 -0.5 Ratings 38050 38050 6 6 (pulse 10) 1 60 (Tc=25C) 150 -55 to +150 0.1-0.1 1.270.2 3.0 -0.5 +0.3 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 8.60.3 Absolute Maximum Ratings (Ta=25C) +0.2 0.40.1 0.86 -0.1 1.20.2 2.540.5 2.540.5 a) Part No. b) Lot No. (Unit: mm) 150mA 120mA A A 18m 4mA 4 0 6 0.2 0.5 1 5 VCE (V) 10 (VCE = 2V) 10000 5000 Typ hFE hFE 5C 12 1000 500 100 50 0.5 IC (A) 94 1000 500 25 C 5C -5 100 50 0.1 1 5 10 20 0.02 0.1 0.5 1.0 IC (A) ra tu re ) e) ) ur at 25 (C a s 1.0 2.0 2.4 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = 2V) 10000 5000 10 0.02 0 0 50 100 200 IB (mA) hFE -- IC Characteristics (typ.) ure er se (C C C ( Ca 5 12 2 0 5 10 j-c * j-a --t Characteristics 100 j-c * j-a (C/W) 0 rat mp pe 1A e te m pe 5 te 1 5A - 3 0 C IC = 7A 3A as IB=1mA e 5 2 tem A 90m 0mA 6 IC (A) 20m 2mA IC (A) (VBE =4V) 10 3 VCE (sat) (V) 10 IC -- VBE Temperature Characteristics (typ.) VCE (sat) -- I B Characteristics (typ.) IC -- VCE Characteristics (typ.) j-a 10 j-c 1 0.1 0.001 0.01 0.1 t (s) 1 10 Surface-mount Power Transistor SSD103 Test Conditions ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b VCB = 60V, I E = 0A VEB = 6V, IC = 0A IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA I FEC = 6A L = 10mH min 60 400 65 800 0.11 1.25 max 10 10 70 1500 0.15 1.5 80 External Dimensions SOP8 Unit 0.70.2 A A V 5.4Max 8 0 to 10 5 a b V V mJ c 6.20.3 A A W C C Symbol (Ta=25C) Ratings typ 0 to 0.1 d 1 4 +0.15 1.270.25 0.42 -0.05 +0.15 0.17 -0.05 (drain heatsink copper foil area 25*25mm) 5.00.2 1.50.2 *1: FR4 70mm*100mm* 1.6mm 0.50.2 Electrical Characteristics Unit V V V 4.40.2 Symbol Ratings VCBO 655 655 VCEO VEBO 6 IC 6 IC (pulse) 10 (Pw 1mS, Duty 25%) 10 IB 1.5 *1 PC Tj 150 Tstg -55 to +150 4.7Max Absolute Maximum Ratings (Ta=25C) a) Part No. b) Corporate mark c) Lot No. d) Control No. (Unit: mm) VCE (sat) -- I C Temperature Characteristics (typ.) IC -- VCE Characteristics (typ.) 7 30mA (VCE = 1V) 6 IC/IB = 100 20mA 6 IC -- VBE Temperature Characteristics (typ.) 0.75 5 10mA 5mA 3 3mA 2 Ta = -55C 25C 75C 125C 0.25 0 1 2 3 4 Ta = 125C 75C 25C -55C 3 2 IB = 1mA 1 0 4 0.5 IC (A) IC (A) 4 VCE (sat) (V) 5 1 0 0 0.01 5 0.1 VCE (V) 1 0 10 0.5 hFE -- IC Temperature Characteristics (typ.) 1.5 ton * tstg *t f -- IC Characteristics (typ.) (VCE = 1V) 2000 1.0 VBE (V) IC (A) 5 tstg ton* tstg * tf (S) 1000 hFE 500 Ta = 125C 75C 25C -55C 100 VCC = 12V IB1 = -IB2 = 30mA 1 0.5 tf ton 0.1 50 0.01 0.1 1 10 IC (A) Safe Operating Area 0 1 2 3 IC (A) (Single pulse) Equivalent Circuit Diagram 20 0.5m 10 s s 10m s IC (A) 5, 6, 7, 8 1m 5 1 1 0.5 natural air cooling Without heatsink 2, 3, 4 0.1 1 5 10 50 100 VCE (V) 95 Surface-mount Power Transistor Array SDA03 External Dimensions SMD-16A V VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -50 IB2 (mA) 50 t on (s) 0.4 t stg (s) 1.75 9 a b Pin 1 tf (s) 0.22 8 20.0max 0.2 19.56 1.40.2 IC (A) -1 +0.15 0.3 -0.05 4.0max RL () 12 +0.15 0.75 -0.05 16 Typical Switching Characteristics VCC (V) -12 2.540.25 0.890.15 0.25 6.8max ICBO IEBO VCEO hFE VCE (sat) (Ta=25C) Unit A A V Ratings -10max -10max -60min 100min -0.4max 6.30.2 8.00.5 Test Conditions VCB = -60V VEB = -6V IC = -25mA VCE = -4V, IC = -2A IC = -2A, IB = -0.1A 3.60.2 Symbol 1.00.3 Electrical Characteristics Unit V V V A A W C C 0 to 0.15 Ratings -60 -60 -6 -6 (pulse -12) -1 3 (No Fin) 150 -55 to +150 9.80.3 Symbol VCBO VCEO VEBO IC IB PT Tj Tstg 3.00.2 Absolute Maximum Ratings (Ta=25C) a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics -6 VCE (sat) -- IC Temperature Characteristics (typ.) -100mA -200mA -5 VCE (sat) (V) -20mA -3 -10mA -2 Ta = 150C 75C 25C -55C -2 -4 IC (A) -30mA -4 (VCE = -4V) -6 IC / IB = 20 -50mA -5 IC (A) IC -- VBE Temperature Characteristics (typ.) -3 Ta = 150C 75C 25C -55C -3 -1 -2 IB = -5mA -1 -1 0 0 -1 -2 -3 -4 0 -0.05 -5 -0.1 -1 0 -10 hFE -- IC Temperature Characteristics hFE 500 Ta = 150C 75C 25C -55C 30 -0.01 -0.1 -1 -10 VCC = 12V IB1 = -IB2 = 50mA 0.5 tf j-a -- t Characteristics (Single pulse) (Ta = 25C) 10 5 1 tstg 0.1 0.05 -0.5 -0.1 -0.5 IC (A) -1 -5 -10 0.3 0.001 0.01 0.1 PT -- Ta Derating -20 1 t (s) IC (A) Safe Operating Area (Single pulse) -1.5 ton 1 j-a (C/W) ton* tstg* tf (sec) VCE = -4V -1.0 50 5 50 -0.5 VBE (V) ton * tstg * t f -- IC Characteristics 1000 100 0 IC (A) VCE (V) Equivalent Circuit Diagram 4 s 1m -10 10 3 m s Without heatsink m PT (W) IC (A) 20 s -1 16 2 15 14 13 12 11 10 9 -0.5 1 natural air cooling Without heatsink -0.1 -3 -5 -10 -50 VCE (V) 96 -100 0 2 0 50 100 Ta (C) 150 4 6 8 2 Surface-mount Power Transistor Array SDA04 Electrical Characteristics External Dimensions SMD-16A V VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -50 IB2 (mA) 50 t on (s) 0.4 t stg (s) 1.75 tf (s) 0.22 9 a b Pin 1 8 20.0max 0.2 19.56 1.40.2 IC (A) -1 +0.15 0.3 -0.05 4.0max RL () 12 +0.15 0.75 -0.05 16 Typical Switching Characteristics VCC (V) -12 2.540.25 0.890.15 0.25 3.60.2 ICBO IEBO VCEO hFE VCE (sat) (Ta=25C) Unit A A V Ratings -10max -10max -60min 100min -0.4max 6.8max Test Conditions VCB = -60V VEB = -6V IC = -25mA VCE = -4V, IC = -2A IC = -2A, IB = -0.1A 6.30.2 8.00.5 Symbol 1.00.3 Unit V V V A A W C C 0 to 0.15 Ratings -60 -60 -6 -6 (pulse -12) -1 2.5 (No Fin) 150 -55 to +150 9.80.3 Symbol VCBO VCEO VEBO IC IB PT Tj Tstg 3.00.2 Absolute Maximum Ratings (Ta=25C) a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics -6 VCE (sat) -- IC Temperature Characteristics (typ.) -100mA -200mA -5 VCE (sat) (V) -20mA -3 -10mA -2 Ta = 150C 75C 25C -55C -2 -4 IC (A) -30mA -4 (VCE = -4V) -6 IC / IB = 20 -50mA -5 IC (A) IC -- VBE Temperature Characteristics (typ.) -3 Ta = 150C 75C 25C -55C -3 -1 -2 IB = -5mA -1 -1 0 0 -1 -2 -3 -4 0 -0.05 -5 -0.1 -1 0 -10 hFE -- IC Temperature Characteristics hFE 500 Ta = 150C 75C 25C -55C 30 -0.01 -0.1 -1 -10 VCC = 12V IB1 = - IB2 = 50mA 0.5 tf j-a -- t Characteristics (Single pulse) (Ta = 25C) 0.05 -0.5 -0.1 -0.5 -1 -5 10 5 1 tstg 0.1 IC (A) -10 0.3 0.001 0.01 0.1 PT -- Ta Derating -20 1 2 t (s) IC (A) Safe Operating Area (Single pulse) -1.5 ton 1 j-a (C/W) ton * tstg * tf (sec) VCE = -4V -1.0 50 5 50 -0.5 VBE (V) ton* tstg* t f -- IC Characteristics 1000 100 0 IC (A) VCE (V) Equivalent Circuit Diagram 4 s 1m -10 10 3 m 20 s Without heatsink s PT (W) IC (A) m -1 16 2 15 10 9 -0.5 1 2 8 natural air cooling Without heatsink -0.1 -3 -5 -10 -50 VCE (V) -100 0 0 50 100 150 Ta (C) 97 Surface-mount Power Transistor Array SDC09 External Dimensions SMD-16A 2.540.25 0.890.15 0.25 +0.15 0.75 -0.05 16 V V mJ 9 a 6.8max ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b (Ta=25C) Unit A A V Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min 6.30.2 8.00.5 Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse 9.80.3 Symbol Unit V V V A A W C C 3.00.2 Ratings 655 655 6 6 (pulse 10 *) 1 2.8 150 -55 to +150 0 to 0.15 Symbol VCBO VCEO VEBO IC IB PT Tj Tstg 1.00.3 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) +0.15 0.3 -0.05 b Pin 1 8 20.0max 0.2 19.56 3.60.2 1.40.2 4.0max * PW 100s, Duty 1% a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics VCE (sat) -- IC Temperature Characteristics (typ.) 8 IC -- VBE Temperature Characteristics (typ.) (VCE = 4V) 6 0.7 IC /IB =100 0.6 20mA 0.5 IC (A) 5 10mA 4 5mA 3 3mA 1mA 1 0 1 2 3 0.3 3 2 1 0.1 4 0 0.0001 5 Ta=150C 100C 75C 25C -55C 4 Ta=150C 100C 75C 25C -55C 0.4 0.2 2 0 5 IC (A) IB = 30mA 6 VCE (sat) (V) 7 0.001 0.01 0 0.1 0 0.2 0.4 IC (A) VCE (V) hFE -- IC Temperature Characteristics ton* tstg* t f -- IC Characteristics 5000 0.6 0.8 1.0 1.2 VBE (V) j-a -- t Characteristics (Single pulse) (Use substrate 42*31*1m) 10 10 ton * tstg * tf (sec) VCE=1V Ta=150C 100C 75C 25C -55C 100 50 0.01 0.1 1 10 tstg VCC =12V IB1= -IB2 =30mA 1 ton tf 0 0.5 1.0 1.5 2.0 2.5 3.0 0.05 0.1 0.5 ms 5 Equivalent Circuit Diagram 50* 50 * 1.6mm Use substrate 1 PT (W) 1ms 1 100 6 10 5 10 t (ms) PT -- Ta Derating Ta=25C 0.5 1 IC (A) Safe Operating Area (Single pulse) IC (A) 1 0.1 0.1 IC (A) 20 j-a (C/W) hFE 1000 3 3 4 13 15 16 5 6 8 42*31*1.0mm Use substrate 2 14 10ms 11 1 0.1 0.05 0.5 2 1 5 10 VCE (V) 98 50 100 0 -50 0 50 Ta (C) 100 150 7 9 10 12 1000 Power Transistor Array SLA8004 PT Tj Tstg Symbol V V V A A W W C C ICBO IEBO VCEO hFE VCE (sat) VFEC Test Conditions Ratings Test Conditions Unit Ratings 310.2 A mA V VCB = -55V -100max VEB = -6V -60max IC = -25mA -55min VCE = -1V, I C = -3A 80min I C = -6A, IB = -0.3A -0.35max IFEC = 10A 2.5max VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max External Dimensions SLA 12pin (LF817) 3.20.15 *3.8 24.40.2 4.80.2 1.70.1 16.40.2 3.20.15 V V a 1.20.15 b 50.5 VCBO VCEO VEBO IC IB Unit PNP 2.450.2 (Root dimension) 4 - (R1) R-end +0.2 +0.2 (3) NPN PNP 60 -55 60 -55 6 -6 12 -12 -3 3 5 (Tc=25C, No Fin) 40 (Tc=25C) 150 -55 to +150 (Ta=25C) NPN 160.2 Symbol Electrical Characteristics 12.90.2 Ratings 9.90.2 Absolute Maximum Ratings (Ta=25C) 0.85 -0.1 1.450.15 0.55 -0.1 40.7 11* P2.540.1= (27.94) (Root dimension) 31.30.2 IC -- VCE Characteristics (typ.) IC -- VCE Characteristics (typ.) (PNP) -12 10 1 2 3 4 5 6 7 8 9 10 11 12 IC (A) -6 -40mA -4 (Unit: mm) 40mA 6 -10mA 0 -1 -2 -3 -4 -5 20mA 4 -20mA -2 IB = 10mA 2 0 -6 2 0 4 hFE -- IC Characteristics (typ.) (VC E = -1V) (PNP) 300 6 VCE (V) VCE (V) hFE -- IC Characteristics (typ.) (VCE = 1V) (N PN ) 400 Typ Typ 100 hFE hFE 100 10 50 10 2 -0.02 -0.1 -1 5 3 0.02 -10 -12 IC (A) hFE -- IC Temperature Characteristics (typ.) 125C 0.1 10 12 hFE -- IC Temperature Characteristics (typ.) (VCE = 1V) (N PN ) 400 C 125 25C -30C 100 1 IC (A) (VC E = -1V) (PNP) 300 C 25 C 0 -3 hFE hFE 100 10 50 10 2 -0.02 -0.1 -1 5 3 0.02 -10 -12 IC (A) VCE (sat) -- IB Characteristics (typ.) 0.1 1 10 12 IC (A) VCE (sat) -- IB Characteristics (typ.) (PNP) -1.4 (N PN ) 1.3 Equivalent Circuit Diagram 4 1.0 -1.0 8 R2 IC = -12A -9A -6A -3A -0.5 VCE (sat) (V) VCE (sat) (V) a) Part No. b) Lot No. 100mA 1 8 -60mA IC (A) m 50 60mA -8 0 A A 0m -100mA 20 I -20 B = 0m A -10 (N PN ) 12 A m -150 R1: 500 Typ. R2: 500 Typ. 0.5 -1A 12A IC = 1A 0 -7 -10 -100 IB (mA) -1000 -3000 9 5 0 5 10 3A 100 6A 3 6 7 10 2 12 9A R1 1 1000 11 3000 IB (mA) 99 Surface-mount Power Transistor Array SPF0001 Tj Tstg Electrical Characteristics (Ta=25C) Unit V V V A A W C C Symbol Test Conditions ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA I FEC = 6A L = 10mH (Ta=25C) Ratings typ min 105 400 max 10 10 125 1500 0.12 1.5 115 800 0.08 1.25 45 External Dimensions SPF 20pin Unit 14.740.2 A A V 13.040.2 +0.1 20 1.0 -0.05 Fin thickness 11 a V V mJ b 10 1 +0.15 1.270.25 0.4 -0.05 +0.15 0.25-0.05 2.50.2 * Use glass epoxy substrate (FR4) 70mm *100mm*1.6mm (11.43) 4-( 0.8) 10 hFE -- IC Temperature Characteristics (typ.) VCE (sat) -- IB Temperature Characteristics (typ.) (VCE = 1V) F1 20 (IC = 1.2A) 0.5 F2 (2.4) (4.7) (3.05) 1 1000 10.50.3 Ratings 11510 11510 6 6 (pulse 10) 1 2.5 (Ta = 25C) 150 -55 to +150 7.50.2 Symbol VCBO VCEO VEBO IC IB PT * 20.2 Absolute Maximum Ratings a) Part No. b) Lot No. 11 (13.54) (Unit: mm) 500 VCE (sat) (V) 150C hFE 25C 100 -55C 50 10 0.1 0.5 1 0.25 150C 25C -55C 0 0.001 56 0.01 0.1 1 IB (A) IC (A) IC -- VEC Temperature Characteristics (typ.) IC -- VBE Temperature Characteristics (typ.) (VCE = 1V) 6 10 5 8 IC (A) IC (A) 4 6 150C 25C -55C 4 2 2 0 150C 25C -55C 3 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.2 0.4 Safe Operating Area (single pulse) 0.8 1.0 1.2 1.4 thermal resistance characteristics Transient (82*36*1mm at the time of mounting the 100 20 recommended pattern of the glass epoxy board) 2 circuits operate 10 0. 5m s 1m j-a 10 j-a * j-f (C/W) s IC (A) 0.6 VBE (V) VEC (V) 1 Equivalent Circuit Diagram 1 circuits operate 2 circuits operate 1 circuits operate F1 F2 j-f 1 3 8 0.1 18,19 0.1 1 10 VCE (V) 100 100 200 0.01 0.00001 0.0001 0.001 0.01 0.1 Power time (s) 1 10 100 12,13 Power Transistor Array STA315A VFEC RB RBE Es/b * PW 1ms, Duty 25% L = 10mH, single pulse External Dimensions STA3 (LF400A) 20.20.2 V V V k mJ b a 0.50.15 7 *2.54=17.780.25 C1.50.5 Typical Switching Characteristics VCC (V) 12 IC -- VCE Characteristics (typ.) 30m A 3 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 2 B 3 C 4 B 5 C 6 B 7 C 8 E a) Part No. b) Lot No. (Unit: mm) VCE (sat) -- IC Temperature Characteristics (IC = 0.5A) 0.5 A 1 E tf (s) 2.5 tstg (s) 8.5 VCE (sat) -- IB Temperature Characteristics m 12 RL () 12 (2.54) 1.00.25 4.00.2 VCE (sat) (Ta=25C) Unit A mA V 9.00.2 ICBO IEBO VCEO hFE Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800120 2.00.4 50min 1.20.2 Tj Tstg Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A 0.50.15 PT Symbol Unit V V V A mA W W C C 2.30.2 Ratings 355 365 6 2 (pulse 3*) 30 3 (Ta=25C) 13.5 (Tc=25C) 150 -55 to +150 11.30.2 Symbol VCBO VCEO VEBO IC IB 4.70.5 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 3 IC/IB = 100 8mA 5mA IC (A) 3mA 2mA 1 IB = 1mA 2 3 4 5 1 6 10 500 Ta = 125C 75C 25C -40C 1 VCC = 12V IB = 5mA -IB = 0A tstg tf ton 1 0.5 4 j-a -- t 10 5 1 0 0.5 1.0 1.5 2.0 1 10 100 1000 t (ms) PT -- Ta Derating (per element) 5 Characteristics Ic (A) Safe Operating Area (single pulse) 1 Single pulse 5 IC (A) 5 0.5 20 10 0.1 0.5 50 ton * tstg * tf (S) 1000 0.1 0 IC (A) ton* tstg *t f -- IC Characteristics (typ.) (VCE = 4V) 3000 50 0.01 0 400 IB (mA) hFE -- IC Temperature Characteristics 100 100 (C/W) 1 VCE (V) hFE 1 0 0 Ta = 125C 75C 25C -40C j-a 0 Ta = 125C 75C 25C -40C 0.25 2 VCE (sat) (V) VCE (sat) (V) 2 Equivalent Circuit Diagram 20 1m s 10 m s 5 PT (W) IC (A) 3 1 0.5 7 W ith 10 inf ini te he 2 at sin RB 4 6 k RBE 1 Without heatsink natural air cooling Withou 8 t heat 0.1 1 5 10 VCE (V) 50 0 0 sink 50 100 150 Ta (C) 101 Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE (sat) Es/b (Ta=25C) Unit A A V Ratings 10max 10max 355 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.20.2 V mJ b 9.00.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 1A, IB = 5mA L = 10mH, single pulse a 0.50.15 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 7*2.54=17.780.25 IB2 (mA) 5 ton (s) 1.3 tstg (s) 4.7 tf (s) 1.2 C1.50.5 1 2 C 3 B 4 E 5 E 6 B 7 C 4.00.2 VCC (V) 12 (2.54) 1.00.25 Typical Switching Characteristics 1.20.2 Tj Tstg Symbol 0.50.15 PT Electrical Characteristics Unit V V V A A W W C C 2.30.2 Ratings 355 355 6 3 1 2.5 (Ta=25C) 12 (Tc=25C) 150 -55 to +150 11.30.2 Symbol VCBO VCEO VEBO IC IB 4.70.5 Absolute Maximum Ratings (Ta=25C) 8 a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics (typ.) 15m A 10 m A 3 8m VCE (sat) -- IB Temperature Characteristics A 6m A VCE = 4V 4mA 3 2mA IB =1mA 1 2 Ta = 125C 75C 25C -55C 0 0.002 3 0.01 0.05 0.1 VCE (V) 20 0 0.5 500 Ta = 125C 75C 25C -55C 1 3 tstg VCE = 12V IB1 = - IB2 = 5mA 10 j-a -- t Characteristics tf 1 Single pulse 10 5 5 1 0.5 ton 0.3 0.05 0.1 0.5 IC (A) 1 5 0.1 0.1 1 10 Ic (A) Safe Operating Area (single pulse) 100 1000 t (ms) PT -- Ta Derating (per element) 1.5 20 0.5 0.5 1.0 VBE (V) (C/W) ton * tstg * tf (S) 1000 10 0 0.4 ton* tstg* t f -- IC Characteristics (typ.) (VCE = 4V) 5000 0.05 0.1 Ta = -55C 25C 75C 125C IB (A) hFE -- IC Temperature Characteristics (typ.) 100 0.01 2 1 j-a 0 0.5 IC (A) IC (A) VCE (sat) (V) 3mA 1 hFE 4 5mA 2 0 IC -- VBE Temperature Characteristics (typ.) (IC = 1A) 1 Equivalent Circuit Diagram 15 1m s 10 5 W m ith s (T c= 25 at ) 10 102 ci rc ui op er 50 0 3 at t heat VCE (V) (A ts Withou 5 nk ll 0.5 0.2 7 si 5 C 2 2 he PT (W) IC (A) 1 ite 10 0m DC in fin 10 0 sink (A ll circui e) 4 ts oper 50 ate) 100 Ta (C) 6 150 5 5000 Power Transistor Array STA415A L = 10mH, single pulse 0.2 2.3 9.0 0.2 0.2 V V V k mJ b a 0.25 IC -- VCE Characteristics (typ.) 30m A 3 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 0.3 0 0.05 9 * 2.54=22.86 0.5 C1.5 tstg (s) 8.5 tf (s) 2.5 a) Part No. b) Lot No. (Unit: mm) VCE (sat) -- IC Temperature Characteristics (IC = 0.5A) 0.5 A 0.3 1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E VCE (sat) -- IB Temperature Characteristics m 12 RL () 12 0.5 0 Typical Switching Characteristics VCC (V) 12 (2.54) 0.15 1.0 0.2 25% 0.2 25.25 0.2 VFEC RB RBE Es/b External Dimensions STA4 (LF412) 4.0 VCE (sat) (Ta=25C) Unit A mA V 0.15 * PW 1ms, Duty ICBO IEBO VCEO hFE Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800120 2.00.4 50min 1.2 Tj Tstg Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A 0.5 PT Symbol Unit V V V A mA W W C C 11.3 Ratings 355 365 6 2 (pulse 3*) 30 4 (Ta = 25C) 18 (Tc = 25C) 150 -55 to +150 0.5 Symbol VCBO VCEO VEBO IC IB 3.5 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 3 IC /IB = 100 8mA 5mA IC (A) 3mA 2mA 1 IB = 1mA 2 3 4 5 1 6 10 500 Ta = 125C 75C 25C -40C 1 VCC = 12V IB = 5mA -IB = 0A tstg 1 j-a -- t Characteristics Single pulse tf ton 1 0.5 4 5 1 0 0.5 1.0 1.5 2.0 1 10 100 Ic (A) Safe Operating Area (single pulse) 1000 t (ms) PT -- Ta Derating (per element) 5 10 5 IC (A) 5 0.5 20 10 0.1 0.5 50 ton * tstg* tf (S) 1000 0.1 0 IC (A) ton*tstg*tf -- IC Characteristics (typ.) (VCE = 4V) 3000 50 0.01 0 400 IB (mA) hFE -- IC Temperature Characteristics 100 100 (C/W) 1 VCE (V) hFE 1 0 0 Ta = 125C 75C 25C -40C j-a 0 Ta = 125C 75C 25C -40C 0.25 2 VCE (sat) (V) VCE (sat) (V) 2 Equivalent Circuit Diagram 20 1m s 10 m s 3 7 9 he 10 si at nk PT (W) 5 ite 0.5 fin in IC (A) ith W 1 2 RB 4 6 8 RBE 1 Without heatsink natural air cooling With out h 0.1 1 5 10 VCE (V) 50 0 0 10 eatsin 50 k 100 150 Ta (C) 103 Power Transistor Array STA460C 0.2 b a V V mJ 0.25 (2.54) 0.15 1.0 0.5 0.3 0.3 0 0 0.05 0.5 0.5 C1.5 0.2 9*2.54 = 22.86 0.2 200 0.2 25.25 A A V 9.0 60 1500 0.09 1.25 50 700 Unit 0.2 VCB = 50V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse max 10 10 70 3000 0.15 1.5 0.2 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b min 2.3 Test Conditions 4.0 C C Symbol External Dimensions STA4 (LF412) 0.15 Tj Tstg W (Ta=25C) Ratings typ 1.2 PT Unit V V V A A 11.3 Ratings 6010 6010 6 6 10 (Pw 1ms, Du 50%) 3.2 (Ta = 25C) 18 (Tc = 25C) 150 -40 to +15 0.5 Symbol VCBO VCEO VEBO IC ICP 3.5 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics (typ.) hFE -- IC Characteristics (typ.) typ 75C 25C 1000 A 10m 5 5mA 4 500 500 3mA 3 2 100 1mA 1 0 1000 -55C h FE 6 2 1 3 4 5 30 0.01 VCE (V) 0.25 50 0.05 0.1 0.5 1 5 30 0.01 10 0.05 0.1 IC (A) VCE (sat) -- IB Temperature Characteristics (typ.) Ta = -55C 25C 75C 125C 0.5 100 50 0 (IC /IB = 100) 0.75 Ta = 125C VCE (sat) (V) 7 IC (A) mA 20 IB =3 8 (VCE = 1V) 5000 h FE 0m A 9 hFE -- IC Temperature Characteristics (typ.) VCE (sat) -- IC Temperature Characteristics (typ.) (VCE = 1V) 5000 10 0.5 1 0 0.01 10 0.05 0.1 0.5 1 IC (A) IC -- VBE Temperature Characteristics (typ.) 0.75 5 j-a -- PW (VCE = 1V) 6 5 10 IC (A) Characteristics 20 10 5 j-a (C/W) 4 IC (A) 2 0.25 IC = 3A 1 1.5A 0.5A 0 1 5 10 50 100 0 500 75C Ta = 125 C 3 25C -55C VCE (sat) (V) 5 0.5 0.5 0 IB (mA) 1 0.5 0.1 0.05 0.1 1.5 1.0 0.5 1 VBE (V) 5 10 50 100 500 1000 2000 PW (ms) Equivalent Circuit Diagram PT -- Ta Derating Safe Operating Area 20 20 10 s 10m 1m 5 3 8 s ith W 15 ms 0.5 Silicone grease used Vertical self-excitation IC (A) he k sin at PT (W) te ini inf 10 2 1 7 0.5 5 Without heatsink Single pulse 4 0.1 Without heatsink 0 -55 Ta=25C 0 50 Ta (C) 104 100 150 0.05 0.5 1 5 10 VCE (V) 50 100 9 Power Transistor Array STA461C External Dimensions STA4 (LF400B) 0.2 25.25 V V mJ 0.2 b 9.0 0.2 (Ta=25C) Unit A A V 0.2 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min 2.3 Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse a (2.54) 0.15 0.25 0.5 1.0 0.05 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 IB2 (mA) -30 ton (s) 0.2 t stg (s) 3.9 0.5 C1.5 tf (s) 0.2 1 2 3 4 B C E 5 6 0.2 IC (A) 1 0.2 RL () 12 4.0 VCC (V) 12 0.15 9 * 2.54=22.86 Typical Switching Characteristics 1.2 Tj Tstg Symbol 0.5 PT Unit V V V A A W W C C 11.3 Ratings 655 655 6 6 (pulse 10) 1 3.2 (Ta = 25C) 18 (Tc = 25C) 150 -55 to +150 0.5 Symbol VCBO VCEO VEBO IC IB 4.7 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 7 8 9 10 B C E a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics (typ.) 7 (VCE = 1V) 6 0.75 30mA IC / IB = 100 20mA 6 IC -- VBE Temperature Characteristics (typ.) VCE (sat) -- IC Temperature Characteristics (typ.) 5 5 5mA 3 Ta = -55C 25C 75C 125C 3mA 0.25 2 0 1 2 3 4 0 0 0.01 5 0.1 1 0 10 Ta = 125C 75C 25C -55C 1 Characteristics VCC = 12V IB1 = - IB2 = 30mA 1 Single pulse 5 0.5 1 0.5 tf 0 10 0.1 ton 0.1 0.1 j-a -- t (C/W) ton*tstg*tf (S) hFE 500 1 2 3 0.05 0.1 1 Ic (A) IC (A) Safe Operating Area (single pulse) 1.5 10 5 tstg 1000 1.0 VBE (V) ton* tstg * t f -- IC Characteristics (VCE = 1V) 2000 50 0.01 0.5 IC (A) hFE -- IC Temperature Characteristics (typ.) 10 100 2000 t (ms) PT -- Ta Derating 20 Equivalent Circuit Diagram 20 0.5m 10 s ith W 15 PT (W) 0.5 8 nk si at he 1 3 ite fin in s 10m s 1m 5 IC (A) 2 1 VCE (V) 100 Ta = 125C 75C 25C -55C 3 IB = 1mA 1 0 4 0.5 j-a IC (A) 4 IC (A) VCE (sat) (V) 10mA 10 2 7 5 Withou t heat Without heatsink natural air cooling 0.1 1 5 10 VCE (V) 50 100 0 0 sink 50 4 100 9 150 Ta (C) 105 Power Transistor Array STA463C External Dimensions STA4 (LF400B) 0.2 25.25 V V mJ 0.2 b 9.0 0.2 (Ta=25C) Unit A A V 0.2 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Ratings 10max 10max 105 to 125 400 to 1500 0.12max 1.5max 45min 2.3 Test Conditions VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA IFEC = 6A L = 10mH, single pulse a (2.54) 0.15 0.25 0.5 1.0 0.05 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 IB2 (mA) -30 t on (s) 0.2 t stg (s) 5.7 0.5 C1.5 tf (s) 0.4 1 2 3 4 B C E 5 6 0.2 IC (A) 1 0.2 RL () 12 4.0 VCC (V) 12 0.15 9 *2.54=22.86 Typical Switching Characteristics 1.2 Tj Tstg Symbol 0.5 PT Electrical Characteristics Unit V V V A A W W C C 11.3 Ratings 11510 11510 6 6 (pulse 10) 1 3.2 (Ta=250C) 18 (Tc=25C) 150 -55 to +150 0.5 Symbol VCBO VCEO VEBO IC IB 4.7 Absolute Maximum Ratings (Ta=25C) 7 8 9 10 B C E a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics (typ.) VCE (sat) -- IC Temperature Characteristics (typ.) 20mA 6 10mA 5mA 4 3 3mA Ta = -55C 25C 75C 150C 0.25 4 3 2 2 1 IB = 1mA 1 0 1 2 3 4 5 0 0 0.01 6 0.1 (VCE = 4V) 2000 5 tstg 1 0.5 1.0 ton 0 10 1 2 Characteristics VCE (sat) -- IB Temperature Characteristics (typ.) 3 Single transistor operated 10 5 1 0.1 0.0001 0.001 0.01 0.1 1 10 t (s) PT -- Ta Derating (Tc = 25C) 20 0.75 Dual transistor operated Single pulse Ic (A) IC (A) 1.5 0.5 VCC = 12V IB1 = - IB2 = 30mA tf 0.1 1 j-a -- t 100 50 (C/W) Ta = 150C 75C 25C -55C j-a ton*tstg*tf (S) 500 hFE 0.5 VBE (V) 10 1000 0.1 0 5 ton* tstg * t f -- IC Characteristics hFE -- IC Temperature Characteristics (typ.) 50 30 0.01 1 IC (A) VCE (V) 100 Ta = 150C 75C 25C -55C 5 0.5 IC (A) 30mA 6 VCE (sat) (V) 7 0 (VCE = 1V) 7 I C /IB = 100 5 IC (A) IC -- VBE Temperature Characteristics (typ.) 0.75 8 Equivalent Circuit Diagram 15 PT (W) nk si at he 0.25 8 ite fin in 0.5 Ta = 150C 75C 25C -55C 3 ith W VCE (sat) (V) IC = 1.2A 10 2 7 5 Withou t heat 0 1 10 100 IB (mA) 106 1000 0 0 4 sink 50 100 Ta (C) 150 9 100 1000 Power Transistor Array STA464C 0.2 a V V mJ (2.54) 0.15 0.25 0.5 1.0 0.05 0.5 0.5 C1.5 0.2 9 *2.54= (22.86) (Root dimension) 0.2 80 0.2 b 9.0 60 400 25.25 A A V 0.2 65 800 0.09 1.25 10 10 70 1500 0.15 1.5 Unit 0.2 VCB=60V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.5A, IB=15mA IFEC=6A L=10mH max 2.3 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b min 4.0 C C Test Conditions External Dimensions STA4 0.15 Tj Tstg W Symbol (Ta=25C) Ratings typ 1.2 PC Electrical Characteristics Unit V V V A A 11.3 Ratings 655 655 6 6 (pulse 10) 1 20 (Tc=25C) 4 (Ta=25C) 150 -55 to +150 0.5 Symbol VCBO VCEO VEBO IC IB 3.5 Absolute Maximum Ratings (Ta=25C) 1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E a) Part No. b) Lot No. (Unit: mm) VCE (sat) -- IC Temperature Characteristics (typ.) IC -- VCE Characteristics (typ.) 7 30mA (VCE = 1V) 6 I C /IB = 100 20mA 6 IC -- VBE Temperature Characteristics (typ.) 0.75 5 IC (A) 4 5mA 3 Ta= -55C 25C 75C 125C 3mA 0.25 2 0 1 2 3 4 3 1 0 0 0.01 5 0.1 1 VCE (V) 0 10 0.5 1.0 ton* tstg * t f -- IC Characteristics (VCE = 1V) 2000 1.5 VBE (V) IC (A) hFE -- IC Temperature Characteristics (typ.) 5 tstg ton*tstg*tf (S) 1000 hFE 500 Ta = 125C 75C 25C -55C 100 VCC = 12V IB1 = - IB2 = 30mA 1 0.5 tf ton 0.1 50 0.01 0.1 1 0 10 1 2 3 Ic (A) IC (A) Safe Operating Area (single pulse) PT -- Ta Derating 20 Equivalent Circuit Diagram 20 0.5m 10 s ith W 15 fin in s 1m s 10m 5 3 5 2 4 5 Witho ut he Without heatsink natural air cooling 0.1 1 5 10 VCE (V) 50 100 9 k sin 10 1 0.5 7 at 1 he PT (W) ite IC (A) Ta = 125C 75C 25C -55C 2 IB = 1mA 1 0 4 0.5 IC (A) VCE (sat) (V) 10mA 5 0 0 6 8 10 atsin k 50 100 150 Ta (C) 107 MOS FET 2SK3710 (under development) Features Applications ON resistance 0.0060 max. Built-in G-S bidirectional Zener diode Trench MOS structure Power steering motor Various motors Replaces mechanical relays External Dimensions 108 130 400 150 -55 to +150 Unit V V A A W mJ C C Symbol Test Conditions V(BR) DSS IGSS IDSS VTH RDS (ON) VSD t rr Ciss Coss Crss ID = 100A VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250A VGS = 10V, ID = 35A ISD = 50A ISD = 25A, di/dt = 50A/s VDS = 10V VGS = 10V f = 1.0MHz min Ratings typ max 60 2 5.0 0.9 110 9400 1400 1100 10 100 4 6.0 1.5 Unit V A A V m V ns pF pF pF (1.4) +0.3 9.10.3 +0.2 0.1 -0.1 +0.2 0.86 -0.1 3 -0.5 +0.3 1.20.2 2.540.1 2.540.1 10.2 0.3 0.1 0.4 (5.4) 1.40.2 Ratings 60 20 70 140 (Ta=25C) (1.3) Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Electrical Characteristics 1.30.2 2.60.2 (1.5) Absolute Maximum Ratings (Ta=25C) 4.440.2 10.5 -0.5 (0.45) (5) TO220S 1 2 3 Details of the back (S=2/1) (Unit: mm) MOS FET 2SK3711 External Dimensions Electrical Characteristics Unit V V A A W mJ C C 130 To be defined 150 -55 to +150 * 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50 * Contact your sales rep for the details of warranty at Tch = 175C ID -- VDS Characteristics (typ.) Test Conditions V(BR) DSS IGSS IDSS VTH RDS (ON) VSD t rr Ciss Coss Crss ID = 100A VGS = +20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250A VGS = 10V, ID = 35A ISD = 50A ISD = 25A, di/dt = 50A/s 70 60 60 10V 8V 6V 40 VGS = 5V 30 10 0.5 0 0 1 2 0 (3) (Unit: mm) Re (yfs) -- ID Characteristics (typ.) 0.6 0.4 0 8 (VDS = 10V) Tc = -55C 25C 150C ID = 70A 10 35A 1 0 10 5 15 20 1 10 VGS (V) 70 ID (A) j-c -- Pw VGS = 10V 12.0 6.0 Characteristics 10 4.0 3.0 2.0 j-c (C/W) RDS (ON) (m) 10.0 5.0 8.0 6.0 4.0 1 0.1 2.0 0 10 20 30 40 50 60 0 -60 -50 70 0 ID (A) 50 100 0.01 Tc (C) (Ta = 25C) 60 Ciss 50 100 40 10 100 t) (O t) ms 80 60 20 t) ho (1s Tc = 150C 25C -55C ho 10 IC (A) N) S RD (With infinite heatsink) 120 0 s( 1s ED IT M LI ho Coss 100 30 10 140 50 1s 1000 ID (pulse) max s( IDR (A) 10000 (Ta = 25C) 500 1m VGS = 0V f = 1MHz 1 Safe Operating Area (single pulse) PD -- TC Characteristics (Ta = 25C) 70 0.1 Pw (sec) Capacitance -- VDS Characteristics IDR -- VSD Characteristics 50000 0.01 0.0001 0.001 150 PD (W) 1.0 Capacitance (pF) (2) a) Part No. b) Lot No. 1. Gate 2. Drain 3. Source 500 RDS (ON) -- TC Characteristics (typ.) ID = 35A VGS = 10V 7.0 RDS (ON) (m) 6 1.4 5.450.1 (1) 0.2 4 0.65 -0.1 15.80.2 1.0 VGS (V) RDS (ON) -- I D Characteristics (typ.) Ta = 25C 5.450.1 VDS -- VGS Characteristics (typ.) Tc = 150C 100C 50C 25C 0C -40C +0.2 +0.2 1.05 -0.1 100 VDS (V) 0 5.0 0.9 70 7800 1250 990 2 3 0.8 30 10 V A A V m V ns pF pF pF 10 100 4 6.0 1.2 2 (VDS = 10V) 40 20 Unit max 60 50 20 0 min Ratings typ VDS = 10V VGS = 10V f = 1.0MHz 80 ID (A) ID (A) Symbol 70 50 (Ta=25C) ID -- VGS Characteristics (typ.) (Ta = 25C) 80 2.00.1 3.20.1 a Re (yfs) (S) Ratings 60 20 70 140 VDS (V) Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg 4.80.2 b 20.0 min 4.0 max Absolute Maximum Ratings (Ta=25C) 15.60.4 13.6 9.6 TO-3P 1.8 5.00.2 Power steering motor Various motors Replaces mechanical relays 2.0 Applications ON resistance 0.006 max. Built-in G-S bidirectional Zener diode Trench MOS structure 19.90.3 4.0 Features 1 40 Crss 10 100 20 0 0 10 20 30 VDS (V) 40 50 0 0.2 0.4 0.6 0.8 VSD (V) 1.0 1.2 1.4 0.1 0.1 0 1 10 VDS (V) 100 0 50 100 150 Tc (C) 109 MOS FET 2SK3724 (under development) External Dimensions 60 To be defined 150 -55 to +150 Unit V V A A W mJ C C * Contact your sales rep for the details of warranty at Tch = 175C 110 Symbol Test Conditions V(BR) DSS IGSS IDSS VTH RDS (ON) VSD t rr Ciss Coss Crss ID = 100A VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 40A ISD = 50A ISD = 25A, di/dt = 50A/s VDS = 10V VGS = 10V f = 1.0MHz min Ratings typ max 60 1 4.0 0.9 To be defined 10600 1600 1300 10 100 2 5.0 1.5 Unit V A A V m V ns pF pF pF 9.10.3 +0.2 0.1 -0.1 +0.2 0.86 -0.1 2.540.1 2.540.1 10.20.3 3 -0.5 +0.3 1.20.2 0.1 0.4 (5.4) 1.40.2 Ratings 60 20 80 160 (Ta=25C) 1.30.2 2.60.2 (1.3) Symbol VDSS VGSS ID ID (pulse) PD EAS Tch * Tstg Electrical Characteristics (1.5) Absolute Maximum Ratings (Ta=25C) 4.440.2 (1.4) (5) TO220S +0.3 Power steering motor Various motors Replaces mechanical relays 10.5 -0.5 Applications ON resistance 0.005 max. Built-in G-S bidirectional Zener diode Trench MOS structure (0.45) Features 1 2 3 Details of the back (S=2/1) (Unit: mm) MOS FET 2SK3800 ID -- VDS Characteristics (typ.) VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22 RL = 0.57, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s 70 60 60 50 50 1.2 2.540.1 1 2 3 30 20 20 10 10 (VDS = 10V) 500 0.5 0 1.0 1.5 0 2.0 0 1.0 2.0 VDS (V) Ta = 25C VGS = 10V ID = 70A 0.2 4.0 5.0 6.0 Tc = -55C 25C 150C 35A 1 0 10 5 15 20 1 j-c -- t Characteristics (Single pulse) (ID = 35A) 30 2.0 15 VDS 8.0 6.0 4.0 20 1 10 VDS (V) 3.0 70 Dynamic I/O Characteristics (typ.) 10 j-c (C/W) 4.0 10 ID (A) 10.0 5.0 VGS VDD = 8V 12V 14V 16V 24V 10 0.1 5 2.0 0 10 20 30 40 50 60 0 -60 -50 70 0 ID (A) 50 100 150 (Ta = 25C) 50000 0.01 0.00001 0.0001 0.001 0.01 Tc (C) PT N) IC (A) IDR (A) IT M 50 40 Ta = 150C 25C -55C Coss 20 S 10 PT ED Ciss 1000 100 LI PT (O RD PT =1 =1 30 VDS (V) 40 50 0 150 70 00 s =1 60 m 0m s s 50 40 30 1 20 10 0 20 100 80 0 s 10 10 50 90 =1 Crss 0 0 (Ta = 25C) 100 30 10 Qg (nC) 500 60 10000 1 Safe Operating Area (single pulse) PD -- TC Characteristics 70 VGS = 0V f = 1MHz 0 0.1 t (s) Capacitance -- VDS Characteristics (typ.) IDR -- VSD Characteristics (typ.) 100 10 VGS (V) ID = 35A VGS = 10V 12.0 1.0 Capacitance (pF) 0 7.0 RDS (ON) -- TC Characteristics (typ.) RDS (ON) (m) RDS (ON) (m) 6.0 0 0.4 VGS (V) RDS (ON) -- I D Characteristics (typ.) 7.0 3.0 0.6 PD (W) 0 Ta = 150C 25C -55C Details of the back (S=2/1) Re (yfs) -- ID Characteristics (typ.) (Ta = 25C) Re (yfs) (S) VGS = 4.5V (5.4) (Unit: mm) 100 40 0.1 0.4 2.540.1 10.20.3 1.0 VDS (V) 30 ID (A) ID (A) 10V 5.5V 5.0V +0.2 0.1 -0.1 +0.3 +0.2 0.86 -0.1 0.8 40 2.60.2 1.20.2 VDS -- VGS Characteristics (typ.) (VDS = 10V) 1.30.2 3 -0.5 6.0 1.56 62.5 ID -- VGS Characteristics (typ.) 70 10 100 4.0 3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 110 2.0 30 (5) V A A V S m pF pF pF ns ns ns ns V ns C/W C/W 4.440.2 (1.4) 40 +0.3 ID = 100A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A Unit max VGS (V) RG = 50 V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr R th (ch-c) R th (ch-a) min 1.40.2 * 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, Test Conditions (1.3) 80 (Tc=25C) 400 150 -40 to +150 Symbol External Dimensions TO220S (Ta=25C) Ratings typ 9.10.3 Electrical Characteristics Unit V V A A W mJ C C 10.5 -0.5 Ratings 40 20 70 140 (1.5) Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*2 Tch Tstg (0.45) Absolute Maximum Ratings (Ta=25C) 0 0.2 0.4 0.6 0.8 VSD (V) 1.0 1.2 1.4 0.1 0.1 0 1 10 VDS (V) 100 0 20 40 60 80 100 120 140 160 Tc (C) 111 MOS FET 2SK3801 100 (Tc=25C) 400 150 -40 to +150 * 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50 ID -- VDS Characteristics (typ.) Symbol Test Conditions V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr R th (ch-c) R th (ch-a) ID = 100A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A min VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22 RL = 0.57, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s 70 60 60 V A A V S m pF pF pF ns ns ns ns V ns C/W C/W 10 100 4.0 3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 100 2.0 30 6.0 1.5 1.25 35.71 2 30 20 20 10 10 0 0.5 0 1.0 1.5 0 2.0 Ta = 150C 25C -55C 0 1.0 2.0 (1) (2) VDS (V) 0.4 (3) 4.0 5.0 6.0 0 7.0 Ta = 25C VGS = 10V (VDS = 10V) 1000 ID = 35A VGS = 10V 10.0 Tc = -55C 25C 150C 100 10 1 5 0 10 15 1 20 10 VGS (V) RDS (ON) -- TC Characteristics (typ.) (Unit: mm) 35A VGS (V) RDS (ON) -- I D Characteristics (typ.) 7.0 0.6 0.2 a) Part No. b) Lot No. 1. Gate 2. Drain 3. Source Re (yfs) -- ID Characteristics (typ.) (Ta = 25C) ID = 70A 3.0 1.4 5.450.1 Re (yfs) (S) VGS = 4.5V 40 0.65 -0.1 15.80.2 1.0 VDS (V) 30 ID (A) ID (A) 40 +0.2 +0.2 1.05 -0.1 50 10V 5.5V 5.0V 2.00.1 3 0.8 50 4.80.2 3.20.1 a b 5.450.1 VDS -- VGS Characteristics (typ.) (VDS = 10V) 15.60.4 13.6 9.6 Unit max 40 ID -- VGS Characteristics (typ.) 70 External Dimensions TO-3P (Ta=25C) Ratings typ 1.8 5.00.2 Electrical Characteristics Unit V V A A W mJ C C 2.0 Ratings 40 20 70 140 19.90.3 4.0 Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*1 Tch Tstg 20.0 min 4.0 max Absolute Maximum Ratings (Ta=25C) j-c 70 ID (A) -- Pw Characteristics (Single pulse) Dynamic I/O Characteristics (typ.) (ID = 35A) 30 10 6.0 15 VDS 2.0 4.0 20 1 10 VGS VDD = 8V 12V 14V 16V 24V 10 0.1 VGS (V) 3.0 6.0 VDS (V) 4.0 j-c (C/W) RDS (ON) (m) RDS (ON) (m) 8.0 5.0 5 2.0 1.0 0 10 20 30 40 50 60 0 -60 -50 70 0 ID (A) 50 100 150 Tc (C) (Ta = 25C) 10 100 ED N) Ciss IDR (A) PT IT 50 40 Ta = 150C 25C -55C 30 Coss 20 S 10 M LI PT (O RD PT =1 0 20 30 VDS (V) 112 40 50 0 150 =1 100 00 =1 m 0m s s s 80 60 40 1 20 0 10 100 120 s 10 0 50 =1 Crss 100 0 (Ta = 25C) PT 60 10000 100 Qg (nC) 500 IC (A) Capacitance (pF) 1 Safe Operating Area (single pulse) PD -- TC Characteristics 70 VGS = 0V f = 1MHz 1000 0 0.1 Pw (s) Capacitance -- VDS Characteristics (typ.) IDR -- VSD Characteristics (typ.) 50000 0.01 0.00001 0.0001 0.001 0.01 PD (W) 0 0 0.2 0.4 0.6 0.8 VSD (V) 1.0 1.2 1.4 0.1 0.1 0 1 10 VDS (V) 100 0 20 40 60 80 100 120 140 160 Tc (C) MOS FET 2SK3803 (under development) * 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50 V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr ID = 100A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 42A VGS = 10V, ID = 42A VDS = 10V f = 1.0MHz VGS = 0V ID = 42A VDD = 20V, RG = 22 VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s min max 40 10 100 4.0 2.0 50 2.1 10500 2400 1900 90 230 490 760 0.85 90 3.0 1.2 Unit V A A V S m pF pF pF ns ns ns ns V ns 4.440.2 10.20.3 1.30.2 a 1.6 b (1.5) Test Conditions External Dimensions TO220S (1.4) Symbol (Ta=25C) Ratings typ +0.3 Electrical Characteristics 10.0 -0.5 100 (Tc=25C) 730 150 -55 to +150 Unit V V A A W mJ C C 8.60.3 Ratings 40 20 85 170 +0.2 0.1-0.1 1.270.2 +0.3 Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*2 Tch Tstg 3.0 -0.5 Absolute Maximum Ratings (Ta=25C) +0.2 0.86 -0.1 0.40.1 1.20.2 2.540.5 2.540.5 a) Part No. b) Lot No. (Unit: mm) 113 MOS FET 2SK3851 150 280 150 -55 to +150 * 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped ID -- VDS Characteristics V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr ID = 100A, VGS = 0V VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 42A VGS = 10V, ID = 42A min 60 2.0 30 4.0 11500 1500 1100 60 25 370 65 0.87 70 VDS = 10V f = 1.0MHz VGS = 0V ID = 42A VDD 16V RG = 22 VGS = 10V ISD = 50A, VGS = 0V ISD = 50A, di/dt = 100A/S 4.7 1.5 4.80.2 2.00.1 3.20.1 a b 2 3 +0.2 +0.2 0.65 -0.1 1.05 -0.1 5.450.1 1.4 5.450.1 15.80.2 (1) VDS -- VGS Characteristics (VDS = 10V) 100 V A A V S m pF pF pF ns ns ns ns V ns 10 100 3.0 2.5 15.60.4 13.6 9.6 Unit max (3) a) Part No. b) Lot No. (Unit: mm) Re (yfs) -- ID Characteristics (Ta = 25C) 1.0 (2) 1. Gate 2. Drain 3. Source (VDS = 10V) 500 10V 80 0.8 80 70 100 40 VGS = 4.0V 30 20 60 Ta = 150C 25C -55C 40 Re (yfs) (S) ID (A) 50 VDS (V) 4.5V 60 ID (A) Test Conditions ID -- VGS Characteristics (Ta = 25C) 90 Symbol External Dimensions TO-3P (Ta=25C) Ratings typ 2.0 Unit V V A A W mJ C C 19.90.3 4.0 Ratings 60 20 85 280 20.0 min 4.0 max Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*2 Tch Tstg 1.8 5.00.2 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 0.6 0.4 ID = 85A 0.2 20 -55C 25C 150C 10 ID = 42A 10 0 0 0.4 0.8 1.2 1.6 2.0 0 1 0 2 VDS (V) 4 5 6.0 2 4 8 6 1 10 12 14 16 18 1 5 VGS (V) RDS (ON) -- TC Characteristics Ta = 25C VGS = 10V 8.0 VGS = 10V ID = 25A j-c -- t RDS (ON) (m) 4.0 Characteristics (Single pulse) 10 3.0 2.0 1.0 6.0 5.0 4.0 3.0 1 0.1 2.0 1.0 0 0 10 20 30 40 50 60 70 80 0 -100 90 -50 0 ID (A) 50 120 Ta = 150C 25C -55C IDR (A) 50 PD (W) Capacitance (pF) 140 60 40 Crss 30 VDS (V) 40 50 60 60 0 0 20 80 20 10 500 100 40 20 Coss 10 160 70 30 0 0.01 0.001 PD -- TC Characteristics 80 Ciss 1000 0.01 0.0001 t (s) (Ta = 25C) 90 Ta = 25C VGS = 0V f = 1MHz 10000 150 Tc (C) Capacitance -- VDS Characteristics IDR -- VSD Characteristics 50000 100 0 0.2 0.4 0.6 0.8 VSD (V) 1.0 1.2 1.4 0 25 50 75 100 Tc (C) 10 ID (A) 7.0 5.0 114 0 6 VGS (V) RDS (ON) -- I D Characteristics RDS (ON) (m) 3 j-c (C/W) 0 125 150 0.1 1 10 50 100 MOS FET FKV460S Electrical Characteristics ID -- VDS Characteristics (typ.) IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD ID = 25A VDD = 12V RL = 0.48 VGS = 10V ISD = 50A, VGS = 0V (1.4) A V S m pF pF pF ns ns ns ns V 9 1.5 1.30.2 a 1.6 b +0.2 0.1-0.1 1.270.2 +0.2 0.40.1 0.86 -0.1 1.20.2 2.540.5 2.540.5 a) Part No. b) Lot No. (Unit: mm) VDS -- VGS Characteristics (typ.) (VDS = 10V) Re (yfs) -- ID Characteristics (Ta = 25C) 1.0 (VDS = 10V) 500 0.8 Ta = 150C 25C -55C 30 20 0.6 ID = 60A 0.4 0.2 10 10 0 0 3 4 5 0 1 2 3 4 5 0 10 VGS (V) 14 RDS (ON) -- TC Characteristics Ta = 25C VGS = 10V 14 VGS = 10V ID = 25A 10 8.0 6.0 4.0 1 5 j-a -- t j-c * 10 60 ID (A) Characteristics (Single pulse) 50 12 RDS (ON) (m) 12 5 20 VGS (V) 10 8.0 6.0 4.0 (C/W) RDS (ON) -- I D Characteristics 15 50 10 10A 0 10 j-a 2 1 -55C 25C 150C 100 25A 1 j-c * 0 Re (yfs) (S) VGS = 3.0V VDS (V) 40 ID (A) 30 VDS (V) 0.1 j-a FR4 (70 * 100 * 1.6mm) Use substrate j-c 2.0 2.0 10 20 30 40 50 0 -60 -50 60 0 50 100 (Ta = 25C) VGS = 0V f = 1MHz 0.01 Crss (Ta = 25C) 200 ID (pulse) max 100 50 ED IT PT IM 5V IC (A) 40 30 VGS = 10V 20 10 R PT L N) (O DS =1 m 60 s 50 0m s 1 10 20 VDS (V) 30 35 40 30 20 10 0 0 10 70 =1 10 100 1 Safe Operating Area (single pulse) PD -- TC Characteristics 10V IDR (A) Coss 0.1 t (s) (Ta = 25C) 60 Ciss 1000 0.001 Tc (C) Capacitance -- VDS Characteristics IDR -- VSD Characteristics 10000 0.01 0.0001 150 PD (W) 0 ID (A) Capacitance (pF) A 50 20 RDS (ON) (m) 7 2800 1400 600 20 600 250 100 1.0 4.440.2 10.20.3 V +10 -5 100 2.3 1.3 20.0 ID -- VGS Characteristics (typ.) 10V 5.0V 4.0V 40 0 40 VDS = 10V f = 1.0MHz VGS = 0V 70 Unit max 60 50 ID (A) ID = 100A, VGS = 0V VGS = +20V VGS = -10V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS (Ta = 25C) 3.5V 60 V(BR) DSS Ratings typ min (1.5) * PW Test Conditions +0.3 60 (Tc=25C) 150 -55 to +150 100s, duty 1% Symbol 10.0 -0.5 Unit V V A A W C C 8.60.3 Ratings 40 +20, -10 60 180 +0.3 Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg External Dimensions TO220S (Ta=25C) 3.0 -0.5 Absolute Maximum Ratings (Ta=25C) 0 0.2 0.4 0.6 0.8 VSD (V) 1.0 1.2 0.1 0.1 0 1 VDS (V) 10 50 0 25 50 75 100 125 150 Tc (C) 115 MOS FET FKV660S Electrical Characteristics 160 ID=25A VDD=12V RL=0.48 VGS=10V ISD=50A, VGS=0V 20 4 6 8 10 12 0 2 1 3 VDS (V) 4 (1.4) +0.3 (Unit : mm) Re (yfs) -- ID Characteristics ID = 60A 0.6 0.4 0.2 5 0 6 0.010 VGS = 10V 1 10 100 15 ID (A) (Ta = 25C) 10000 VGS = 4V 0.015 VGS = 10V 0.010 0 -60 -50 0 50 100 Tc (C) Ciss 1000 Coss 150 Crss 100 0 10 20 30 VDS (V) 180 Ta = 25C VGS = 0V Safe Operating Area (single pulse) (Ta = 25C) 500 ID (pulse) max 160 100 140 ED IT IM ID (A) IDR (A) 120 100 80 10 R DS L N) (O PT PT =1 m s 0m s =1 60 1 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD (V) 116 0.1 0.1 10 VGS = 0V f = 1MHz ID (A) IDR -- VSD Characteristics 1 20 Capacitance -- VDS Characteristics (ID = 25A) 0.020 200 10 VGS (V) 0.005 0.005 100 1 10 Capacitance (pF) RDS (ON) () VGS = 4V 0.015 -55C 25C 150C 10A 5 0 0.025 0.020 (VDS = 10V) 1000 25A 0.030 0.025 1 10 VDS (V) 0.40.1 a) Part No. b) Lot No. 0.8 RDS (ON) -- TC Characteristics (Ta = 25C) 0.030 +0.2 0.1- 0.1 1.20.2 2.540.5 2.540.5 (Ta = 25C) VGS (V) RDS (ON) -- I D Characteristics 0 VDS (V) ID (A) Ta = 150C 100C 50C 25C 0C -55C 0.01 2 1.6 b 1.270.2 +0.2 0.86 - 0.1 1.0 40 0 1.5 a 1.4 1 0.001 14 1.30.2 1.2 0.1 VGS = 3.5V A V S m pF pF pF ns ns ns ns V VDS -- VGS Characteristics (VDS = 10V) 10 80 A (1.5) 11 2500 900 150 50 400 400 300 1.0 100 4V 60 RDS (ON) () 1.0 20 4.440.2 10.20.3 V +10 -5 100 2.5 VDS=10V f=1.0MHz VGS=0V 1000 Unit max 60 4.5V 100 0 min ID -- VGS Characteristics 120 ID (A) ID=100A, VGS=0V VGS =+20V VGS =-10V VDS=60V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=25A VGS=10V, ID=25A IDSS VTH Re (yfs) RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD 10V 6V 140 V(BR)DSS IGSS (Ta = 25C) 180 Test Conditions Re (yfs) (S) ID -- VDS Characteristics Symbol External Dimensions TO220S ( Ta=25C) Ratings typ 10.0 -0.5 8.60.3 Unit V V A A W C C +0.3 Symbol Ratings VDSS 60 +20, -10 VGSS 60 ID 180 ID(pulse) PD 60(Tc=25C) Tch 150 Tstg -40 to +150 PW 100s, duty 1% 3.0 -0.5 Absolute Maximum Ratings (Ta=25C) 100 40 50 100 200 Surface-mount MOS FET Array SDK06 RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD ID -- VDS Characteristics 52 1.0 1.0 57 1.0 100 2.5 1.8 0.2 0.25 200 120 20 VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12 VGS = 5V RG1 = 50, RG2 = 10k 0.25 0.3 2.0 7.4 3.3 4.2 1.0 ISD = 1A, VGS = 0V V A A V S pF pF pF s s s s V 1.5 16 0.3 9 a b +0.15 -0.05 Pin 1 19.56 a) Part No. b) Lot No. (Unit: mm) 0.8 VGS = 4V VDS = 10V 10 5 Ta = 150C VGS = 5V VGS = 10V 0.6 3 2 RDS (ON) () ID (A) 1 0.1 VGS = 3V 1 0 2 4 6 8 10 12 0.01 14 1 2 0.2 4 5 6 1 2 3 4 5 6 ID (A) Re (yfs) -- I D Characteristics 0.5 I DR -- VSD Characteristics 10 10 ID = 1A VDS = 10V 5 Re (yfs) (S) VGS = 4V typ. 0.4 0.3 VGS = 10V typ. 0.2 8 1 Ta = -55C 25C 150C 0.5 0.1 0.2 0.05 0.1 0 50 100 150 0.5 Ta = 150C 75C 25C -55C 6 4 2 1 0 6 0 0.2 0.4 ID (A) Tc (C) (Tc = 25C) 10 ED 1.2 1.4 Equivalent Circuit Diagram s (o m 10 R LI 1.0 0 s 1m IT M n) S D 0.8 10 ID (pulse) max 5 0.6 VSD (V) Safe Operating Area (single pulse) 15 16 s ID (A) 0 0 VGS (V) R DS (ON) -- TC Characteristics RDS (ON) () 3 25C 0.4 0 0 VDS (V) -50 75C -55C Ta = -55C 25C 75C 150C IDR (A) ID (A) 4 0 8 20.0max 0.2 20 VGS = 4V +0.15 0.75 -0.05 R DS (ON) -- I D Characteristics ID -- VGS Characteristics 6 2.540.25 0.890.15 0.25 6.8max 47 3.60.2 ID = 1mA, VGS = 0V VGS = 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A Unit max 1.40.2 V(BR) DSS IGSS IDSS VTH Re (yfs) min 1.00.3 Test Conditions External Dimensions SMD-16A 6.30.2 8.00.5 40 150 -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10 Symbol (Ta=25C) Ratings typ 4.0max 3 (Tc=25C, 4 circuits operate) Electrical Characteristics Unit V V A A W mJ C C 9.80.3 Ratings 525 20 3 6 3.00.2 Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg 0 to 0.15 Absolute Maximum Ratings (Ta=25C) 13 14 11 12 9 10 1 1 3 5 7 0.5 2 0.1 0.5 1 5 10 4 6 8 50 VDS (V) 117 Surface-mount MOS FET Array SDK08 ID = 4A VDD 12V RL = 3 VGS = 5V RG = 50 50 80 60 40 1.0 ISD = 6A, VGS = 0V 8 0.1 Ta = 150C 75C 25C 0C -55C VGS = 3V 0.01 4 2 0 0 3 9 6 12 15 0.001 0 2 1 VDS (V) 4 0 5 0.10 0 2 4 25C 0C 0 0 6 8 6.8max 0.1 0.05 0.1 10 1 10 ID (A) (single pulse) (Ta = 25C) (ID = 4A) 0.20 Ta = 150C 0.10 0.05 1 500 VDD = 12V constant RGS = 50 VGS = 5V 75C 0.05 10 RDS (ON) -- TC Characteristics (typ.) S/W Time W -- ID Characteristics (VGS = 4V) 0.15 Ta = 150C 25C -55C VGS (V) 0.20 RDS (ON) () RDS (ON) () Ta = 150C 75C 25C 0C -55C (VDS = 10V) 100 0.2 RDS (ON) -- I D Characteristics (VGS = 10V) 0.20 Re (yfs) -- ID Characteristics 0.6 VGS (V) RDS (ON) -- I D Characteristics 0.15 3 8 20.0max (Unit: mm) Ta = 150C 75C 25C 0C -55C 0.8 Pin 1 a) Part No. b) Lot No. 0.4 RDS (ON) () 6 VDS (V) ID (A) ID (A) VGS = 10V b 19.56 (ID = 4A) 1.0 1 9 a 0.2 1.4 1.2 10 +0.15 0.3 -0.05 VDS -- VGS Characteristics (typ.) (VDS = 10V) 14 12 16 Re (yfs) (S) ID -- VGS Characteristics 1.5 2.540.25 +0.15 0.75 -0.05 3.60.2 1.8 9.0 0.07 0.09 700 300 90 0.890.15 0.25 1.40.2 1.3 5.0 V nA A V S pF pF pF ns ns ns ns V 100 100 2.3 13.0 0.08 0.1 6.30.2 8.00.5 50 VDS = 10V f = 1.0MHz VGS = 0V 20 10 Unit max 4.0max min 1.00.3 ID = 100A, VGS = 0V VGS = 20V VDS = 50V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A Ciss Coss Crss t d (on) tr t d (off) tf VSD VGS = 4V 16 V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) (Ta = 25C) 18 Test Conditions 0.15 VGS = 4V 0.10 VGS = 10V 0.05 -55C S/W Time (ns) ID -- VDS Characteristics (typ.) Symbol External Dimensions SMD-16A (Ta=25C) Ratings typ 0 to 0.15 Ratings 50 20 4.5 9 9.80.3 (Ta=25C) Unit V V A A W 4 (Tc=25C, 4 circuits operate) 80 mJ C 150 C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50 Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg 3.00.2 Electrical Characteristics Absolute Maximum Ratings 100 tr t d (off) t d (on) tf 10 0 2 4 6 8 10 12 0 2 4 ID (A) 6 8 10 0 -60 -50 12 0 ID (A) 50 100 5 0.1 150 0.5 Tc (C) 1 5 10 ID (A) Equivalent Circuit Diagram Capacitance -- VDS Characteristics ISD -- VSD Characteristics (typ.) (Ta = 25C) 5000 8 1000 6 Coss 100 Crss 4 circuits operate 3 circuits operate 2 circuits operate 1 circuits operate 3 5 P T (W) Ciss Ta = 150C 75C 25C 0C -55C 4 3 2 15 2 1 0 0 1 10 VDS (V) 100 0 0.3 0.6 0.9 VSD (V) 1.2 1.5 0 50 100 Ta (C) 150 16 13 3 2 1 1 10 118 4 7 ISD (A) Capacitance (pF) VGS = 0V f = 1MHz 5 0.1 PT -- Ta Characteristics 14 11 5 4 12 9 7 6 8 10 Surface-mount MOS FET Array SDK09 ID -- VDS Characteristics 1.0 5.0 0.15 0.2 400 130 30 VDS=10V f=1.0MHz VGS=0V ID=4A VDD=12V RL=3 VGS=5V RG=50 0.2 0.25 100 300 250 200 1.0 ISD=6A, VGS=0V Pin 1 19.56 a) Part No. b) Lot No. (Unit: mm) R DS (ON) -- I D Characteristics 0.30 0.25 VGS=4.5V RDS (ON) () VGS=4V ID (A) 6 Ta=-55C 25C 75C 150C 4 4 2 0 1 2 3 4 5 0 6 0.15 VGS=10V 0.10 0 1.0 2.0 3.0 0 4.0 0 2 4 VGS (V) 8 10 1.0 1.2 I DR -- VSD Characteristics 50 0.45 6 ID (A) Re (yfs) -- I D Characteristics R DS (ON) -- TC Characteristics ID=4A 0.20 0.05 VDS (V) 0.40 8 20.0max VDS=10V 8 0 b 0.2 8 12 9 a +0.15 0.3 -0.05 10 VGS=10V ID (A) 16 pF pF pF ns ns ns ns V ID -- VGS Characteristics 16 +0.15 0.75 -0.05 1.5 2.540.25 0.890.15 0.25 6.8max V A A V S 5 100 2.0 3.60.2 Ciss Coss Crss t d (on) tr t d (off) tf VSD 120 1.40.2 ID=100A, VGS=0V VGS=20V VDS=120V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A Unit max 6.30.2 8.00.5 V(BR) DSS IGSS IDSS VTH Re (yfs) min 4.0max Test Conditions External Dimensions SMD-16A 1.00.3 Symbol RDS (ON) *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50 (Ta=25C) Ratings typ 9.80.3 Unit V V A A W mJ C C 3.00.2 Symbol Ratings 120 VDSS 20 VGSS 6 ID 10 ID (pulse) *1 3 (Tc=25C, 4 circuits operate) PT EAS *2 80 Tch 150 Tstg -55 to +150 0 to 0.15 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 6 VGS=0V VGS=4V 5 VGS=10V 0.20 Ta=-55C 25C 75C 150C 1 0.5 0.10 0.1 0.05 0.1 0 -50 0 50 100 150 0.5 1 5 3 2 1 0 10 0 0.2 0.4 ID (A) Tc (C) (Ta = 25C) 20 1000 500 ID (pulse) max 10 Ciss 5 ID (A) Coss Equivalent Circuit Diagram 0 s 1m s 10 15 m RDS (on) LIMITED 100 16 13 14 11 12 9 10 s 10 0m s 1 1 50 0.8 10 ID (DC) max VGS =0V f=1MHz 0.6 VSD (V) Safe Operating Area (single pulse) Capacitance -- VDS Characteristics Capacitance (pF) Ta=150C 75C 25C -55C 4 5 IDR (A) Re (yfs) (S) RDS (ON) () 10 0.30 3 5 7 0.5 2 4 6 8 Crss 0.1 10 0 10 20 30 VDS (V) 40 50 1 5 10 50 100 200 VDS (V) 119 MOS FET Array SLA5027 j-c VISO Tch Tstg (Fin to lead terminal) AC1000 mJ C/W Vrms C C V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) ID = 100A, VGS = 0V VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 8A VGS = 4V, ID = 8A Ciss Coss Crss t d (on) tr t d (off) tf VSD 150 -55 to +150 *1 PW 250s, duty 1% *2 VDD = 30V, L = 10mH, unclamped, RG = 50 min Unit max 60 1.0 6.0 1.5 12.0 0.07 1100 500 170 VDS = 10V f = 1.0MHz VGS = 0V ID = 8A VDD 30V RL = 3.75 VGS = 5V RG = 50 0.08 50 250 250 180 1.0 ISD = 10A, VGS = 0V V A A V S pF pF pF ns ns ns ns V 100 100 2.0 1.5 Ellipse 3.20.15 * 3.8 31.00.2 3.20.15 24.40.2 4.80.2 1.70.1 0.2 16.4 Lead plate thickness resins 0.8 max 250 2.08 Test Conditions 8.5max EAS*2 Symbol External Dimensions SLA 12pin (LF800) 16.00.2 60 (Tc=25C,4 circuits operate) (Ta=25C) Ratings typ 13.00.2 5 (Ta=25C, 4 circuits operate) PT Unit V V A A W W 9.90.2 Ratings 60 20 12 48 a b 2.7 Symbol VDSS VGSS ID ID (pulse)*1 9.5min (10.4) Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 12 Pin 1 +0.2 -0.1 0.85 1.20.15 0.55 1.450.15 2.20.7 +0.2 -0.1 11*P2.540.7 =27.941.0 31.5 max 1 2 3 4 5 6 7 8 9 10 11 12 a) Part No. b) Lot No. (Unit: mm) ID -- VDS Characteristics ID -- VGS Characteristics 10 R DS (ON) -- I D Characteristics 0.1 12 VDS = 10V 10 VGS = 4V 4V 5V 10V 8 RDS (on) () 8 ID (A) ID (A) 6 VGS = 3V 4 6 Ta = 150C 75C 25C -55C 4 2 0 0.05 VGS = 10V 2 0 1 2 3 4 5 0 6 0 1 VDS (V) 2 3 0 0.1 4 1 VGS (V) Re (yfs) -- I D Characteristics R DS (ON) -- TC Characteristics 20 I DR -- VSD Characteristics 30 0.12 10 ID (A) 20 VDS = 10V VGS = 4V VGS = 0V 10 0.10 VGS = 10V 0.06 0.02 -50 0 50 100 10 IDR (A) Re (yfs) (S) RDS (ON) () 5 5 2 0.4 150 1 5 Capacitance -- VDS Characteristics D As R VDS (V) 7 10 s ID (A) s 1 4 2 50 6 0m Capacitance (pF) s 5m 1m s 10 5 1 10 Equivalent Circuit Diagram 3 Crss 50 1.2 m Coss 10 ID (DC) max 10 500 0.8 VSD (V) (Ta = 25C) Ciss 5 0.4 0. VGS = 0V f = 1MHz 1 0 ID (pulse) max S (o n) LI su me M IT dV ED GS =4 V li ne 50 100 0.1 20 Safe Operating Area (single pulse) 2000 120 10 ID (A) Tc (C) 1000 1 0.5 0.5 0.5 1 5 10 VDS (V) 50 100 8 5 11 9 12 MOS FET Array SLA5098 (under development) PT Tch Tstg ) W Tc=25C, 90 ( All circuits operate ) W 150 -55 to +150 C C * PW 100s, duty 1% V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD ID = 100A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 10A VGS = 10V, ID = 10A t rr VDS = 10V f = 1.0MHz VGS = 0V ID = 10A VDD = 14V RL = 1.4 VGS = 10V RG = 50 ISD = 10A, VGS = 0V ISD = 10A, VGS = 0V di/dt = 100A/s min max 40 10 100 1.5 10 2.5 17 1450 420 260 40 40 200 100 0.85 45 1.2 Unit V A A V S m pF pF pF ns ns ns ns V Ellipse 3.20.1 * 3.8 31.00.2 3.20.1 24.40.2 4.80.2 1.70.1 0.2 16.4 Lead plate thickness resins 0.8 max Without heatsink, Ta=25C, All circuits operate Test Conditions External Dimensions STA4 (LF412) 9.90.2 mJ A Symbol (Ta=25C) Ratings typ 16.00.2 To be defined To be defined Electrical Characteristics 13.00.2 Unit V V A A 8.5max 5( Ratings 40 20 20 40 a b 2.7 Symbol VDSS VGSS ID ID (pulse)* EAS IAS 9.5min (10.4) Absolute Maximum Ratings (Ta=25C) 15 Pin 1 +0.2 +0.2 0.65 -0.1 1.20.15 2.20.7 0.55 -0.1 +0.2 1.15 -0.1 14*P2.030.4 = 28.420.8 31.5 max a) Part No. b) Lot No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 (Unit: mm) ns Equivalent Circuit Diagram 4 9 5 14 10 15 3 2 8 7 1 13 12 6 11 121 MOS FET Array SMA5113 35 (Tc=25C, All circuits operate, Fin) Unit V V A A W W 130 7 mJ A 4 (Ta=25C, All circuits operate, No Fin) PT EAS *2 IAS j-a 31.2 Junction - Ambientare, Ta=25C, All circuits operate C/W j-c 3.57 Junction - Case, Ta=25C, All circuits operate C/W Electrical Characteristics Symbol Test Conditions V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) ID = 100A, VGS = 0V VGS = 30V VDS = 450V, VGS = 0V VDS = 10V, ID = 1mA VDS = 20V, ID = 3.5A VGS = 10V, ID = 3.5A Ciss Coss Crss t d (on) tr t d (off) tf VSD Tch Tstg C 150 C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50 Unit max 450 V nA A V S pF pF pF ns ns ns ns V 100 100 4.0 2.0 3.5 5.0 0.84 720 150 65 VDS = 10V f = 1.0MHz VGS = 0V ID = 3.5A VDD 200V RL = 57 VGS = 10V RG = 50 1.1 25 40 70 50 1.0 ISD = 7A, VGS = 0V 1.5 ID -- VGS Characteristics 4.00.2 31.00.2 5 5 4 4 5V 3 +0.2 1.20.1 31.5 max (Including both-side resin burr) 1 2 3 4 5 6 7 8 9 10 11 12 a) Part No. b) Lot No. VGS = 10V VDS = 20V 3 15 0 20 1.0 0.5 Ta = -55C 25C 150C 1 1 10 +0.2 0.55 -0.1 RDS (ON) -- ID Characteristics 2 VGS = 4.5V 5 1.210.15 1.460.15 0.85 -0.1 RDS (ON) () 6 ID (A) 6 0 b a 1.5 5.5V 10V 2 2.50.2 30 11* P2.540.1=27.94 7 7 ID (A) min External Dimensions SMA (LF1000) (Unit: mm) ID -- VDS Characteristics 0 (Ta=25C) Ratings typ 10.20.2 Ratings 450 30 7 28 2.4 Symbol VDSS VGSS ID ID (pulse) *1 (10.4) Absolute Maximum Ratings (Ta=25C) 0 2 VDS (V) 4 6 8 0 10 0 1 2 3 VGS (V) RDS (ON) -- TC Characteristics Re (yfs) -- ID Characteristics 2.5 5 6 7 IDR -- VSD Characteristics 100 7 VDS = 20V VGS = 10V ID = 3.5A VGS = 0V 6 50 2.0 4 ID (A) 1.0 IDR (A) Re (yfs) (S) RDS (ON) () 5 1.5 Ta = -55C 25C 150C 10 4 3 2 5 0.5 1 2 0.05 0.1 0 -50 0 50 100 150 0.5 Tc (C) 1 0.2 0.4 (Ta = 25C) 50 Ciss 0.6 0.8 1.0 VSD (V) Safe Operating Area (single pulse) 1000 Equivalent Circuit Diagram ID (pulse) max 10 500 VGS = 0V f = 1MHz 100 ED IT IM )L 10 ID (DC) max Coss S (o 0 s 1m s n 5 ID (A) Capacitance (pF) 0 ID (A) Capacitance -- VDS Characteristics 10 RD 10 3 6 7 10 m s 0m s 1 1 4 8 11 0.5 50 2 Crss 0.1 0.05 20 0 10 20 30 VDS (V) 122 0 7 40 50 3 5 10 50 VDS (V) 100 500 5 9 12 MOS FET Array STA508A ID -- VDS Characteristics VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3 VGS = 5V RG = 50 ISD = 6A, VGS = 0V 0.2 0.25 1.5 ID -- VGS Characteristics 16 0.5 C1.5 1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S a) Part No. b) Lot No. (Unit: mm) R DS (ON) -- I D Characteristics 0.30 0.25 VGS = 4.5V RDS (ON) () VGS = 4V ID (A) 6 Ta = -55C 25C 75C 150C 4 4 2 0 1 2 3 4 5 0 6 0.15 VGS = 10V 0.10 0 1.0 2.0 3.0 0 4.0 0 2 4 VGS (V) 8 10 1.0 1.2 I DR -- VSD Characteristics 50 0.45 6 ID (A) Re (yfs) -- I D Characteristics R DS (ON) -- TC Characteristics ID = 4A 0.20 0.05 VDS (V) 0.40 0.3 0 0.05 VDS = 10V 8 0 0.3 9 *2.54=22.86 8 12 (2.54) 0.15 0.5 0 10 VGS = 10V ID (A) 0.25 1.0 0.2 0.15 0.2 400 130 30 100 300 250 200 1.0 0.2 1.0 5.0 b a 4.0 5 100 2.0 0.2 0.15 Ciss Coss Crss t d (on) tr t d (off) tf VSD V A A V S pF pF pF ns ns ns ns V 1.2 RDS (ON) 25.25 120 0.2 ID = 100A, VGS = 0V VGS = 20V VDS = 120V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A Unit max 9.0 V(BR) DSS IGSS IDSS VTH Re (yfs) min 0.2 Test Conditions 0.2 Symbol External Dimensions STA4 (LF412) 0.5 4 (Ta = 25C) 20 (Tc = 25C) EAS *2 80 mJ Tch C 150 Tstg C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50 PT (Ta=25C) Ratings typ 2.3 Electrical Characteristics (Ta=25C) Unit V V A A W W 11.3 Ratings 120 20 6 10 0.5 Symbol VDSS VGSS ID ID (pulse)*1 3.5 Absolute Maximum Ratings 6 VGS = 0V VGS = 4V 5 VGS = 10V 0.20 Ta = -55C 25C 75C 150C 1 0.5 0.10 0.1 0.05 0.1 0 -50 0 50 100 150 0.5 Tc (C) 1 5 3 2 1 0 10 0 0.2 0.4 ID (A) (Ta = 25C) 20 1000 500 ID (pulse) max 10 Ciss 5 ID (A) Coss 50 Equivalent Circuit Diagram 0 s 1m s 10 m RDS (on) LIMITED 100 0.8 10 ID (DC) max VGS = 0V f = 1MHz 0.6 VSD (V) Safe Operating Area (single pulse) Capacitance -- VDS Characteristics Capacitance (pF) Ta = 150C 75C 25C -55C 4 5 IDR (A) Re (yfs) (S) RDS (ON) () 10 0.30 s 10 5 3 7 9 0m s 1 2 0.5 1 4 6 8 10 Crss 0.1 10 0 10 20 30 VDS (V) 40 50 1 5 10 50 100 200 VDS (V) 123 MOS FET Array STA509A ID -- VDS Characteristics ID = 1A VDD 12V RL = 12 VGS = 5V RG1 = 50, RG2 = 10 ISD = 6A, VGS = 0V 1.5 0.2 0.3 0.3 0 0 0.05 9 *2.54=22.86 0.5 C1.5 1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S a) Part No. b) Lot No. (Unit: mm) 0.8 20 VGS = 4V (2.54) 0.15 0.5 R DS (ON) -- I D Characteristics ID -- VGS Characteristics 6 0.25 1.0 VGS = 4V VDS = 10V 10 5 Ta = 150C VGS = 5V VGS = 10V 0.6 RDS (ON) () 4 ID (A) 3 2 0.1 VGS = 3V Ta = -55C 25C 75C 150C 1 0 2 4 6 8 10 12 0.01 14 1 2 4 5 6 1 2 3 4 5 6 I DR -- VSD Characteristics 10 10 ID = 1A VDS = 10V 5 Re (yfs) (S) VGS = 4V typ. 0.4 0.3 VGS = 10V typ. 0.2 8 1 Ta = -55C 25C 150C 0.5 0.1 0.2 0.05 0.1 0 50 100 150 0.5 Ta = 150C 75C 25C -55C 6 4 2 1 0 6 0 0.2 0.4 ID (A) Tc (C) (Tc = 25C) 10 ED 1.4 Equivalent Circuit Diagram s (o m 3 s ID (A) 1.2 10 R LI 1.0 0 s 1m IT M n) S D 0.8 10 ID (pulse) max 5 0.6 VSD (V) Safe Operating Area (single pulse) 5 7 9 1 2 0.5 0.1 0.5 1 1 5 VDS (V) 124 0 ID (A) Re (yfs) -- I D Characteristics 0.5 0 -55C VGS (V) R DS (ON) -- TC Characteristics RDS (ON) () 3 25C 0.4 0 0 VDS (V) -50 75C 0.2 IDR (A) ID (A) 1 0 0.2 VDS = 10V f = 1.0MHz VGS = 0V 0.25 0.3 b a 0.2 0.2 0.25 200 120 20 2.0 7.4 3.3 4.2 1.0 V A A V S pF pF pF s s s s V 4.0 1.0 1.0 0.2 25.25 57 1.0 100 2.5 0.15 Ciss Coss Crss t d (on) tr t d (off) tf VSD 52 1.2 RDS (ON) 47 9.0 ID = 1mA, VGS = 0V VGS = 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A Unit max 0.2 V(BR) DSS IGSS IDSS VTH Re (yfs) min 0.2 Test Conditions External Dimensions STA 0.5 4 (Ta = 25C) 20 (Tc = 25C) EAS *2 40 mJ Tch C 150 Tstg C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10 PT Symbol (Ta=25C) Ratings typ 2.3 Electrical Characteristics Unit V V A A W W 11.3 Ratings 525 20 3 6 0.5 Symbol VDSS VGSS ID ID (pulse) *1 3.5 Absolute Maximum Ratings (Ta=25C) 10 50 4 6 8 10 Thyristor with built-in reverse diode for HID lamp ignition TFC561D External Dimensions (unit: mm) 4.440.2 (1.4) 1.30.2 11.30.5 8.60.3 10.20.3 +0.3 Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=430A Critical rate-of-rise of on-state current: di/dt=1200A/s Gate trigger current: I GT=20mA max With built-in reverse diode 10.0 -0.5 Features 1.20.2 2.590.2 0.5 1.270.2 +0.2 Parameter Symbol 0.760.1 Ratings Unit Conditions VDRM 600 V Repetitive surge peak on-state current ITRM 430 A Critical rate-of-rise of on-state current di/dt 1200 A/s * Peak forward gate current IFGM 2.0 A f 50Hz, duty 10% f 50Hz, duty 10% f 50Hz PGM 5.0 W Average gate power loss PG (AV) 0.5 W Peak reverse gate voltage VRGM 5 V Diode repetitive peak surge forward current I FRM 240 A Junction temperature Tj -40 to +125 C Storage temperature Tstg -40 to +125 C 2.540.5 Tj=-40 to +125C, Repetitive peak off-state voltage Peak gate power loss 11.0 0.86 -0.1 Absolute Maximum Ratings 2.540.5 RGK=1k VD 430V, 100kcycle, * 0.40.1 (1). Cathode (K) (2). Anode (A) (3). Gate (G) (1) (2) (3) Wp=1.3s, Ta=125C VD Weight: Approx. 1.5g Measurement circuit 430V, 100kcycle, L * Wp=1.3s, Ta=125C * The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to VD Sample C G1 cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles. G2 Electrical Characteristics (Tj=25C) Ratings Symbol min typ Unit Conditions max IT=10A On-state voltage VTM 1.4 V Gate trigger voltage VGT 1.5 V VD=6V, RL=10 Gate trigger current IGT 20 mA VD=6V, RL=10 Gate non-trigger voltage VGD Holding current IH 0.1 2 10.0 V VD=480V, Tj=125C mA RG-K=1k, Tj=25C Off-state current (1) IDRM (1) 100 A VD=VDRM, RG-K=1k, Tj=25C Off-state current (2) IDRM (2) 1 mA VD=VDRM, RG-K=1k, Tj=125C Thermal resistance Rth 4.0 C/W Diode forward voltage VF 1.4 V Junction to case IF=10A Current waveform (1cycle) (Ta=25C) 100A/div Parameter 2s/div 125 Thyristor with built-in reverse diode for HID lamp ignition TFC562D External Dimensions (unit: mm) Features 4.440.2 (1.4) 9.10.3 (2.69) (1.8) +0.2 1.34 -0.1 +0.2 0.86-0.1 Symbol Ratings Unit Repetitive peak off-state voltage VDRM 600 V Repetitive surge peak on-state current ITRM 600 A Critical rate-of-rise of on-state current di/dt 1600 A/s Peak forward gate current IFGM 2 A f 50Hz, duty 10% Peak gate power loss PGM 5 W f 50Hz, duty 10% Average gate power loss PG (AV) 0.5 W Peak reverse gate voltage VRGM 5 V f 50Hz Diode repetitive peak surge forward current I FRM 460 A Ta = 100C, VD 430V, WP = 1.05s, 100kcycle*, See the examples of current waveforms Junction temperature Tj -40 to +125 C Storage temperature Tstg -40 to +125 C Conditions Tj = -40 to +125C, 0.760.1 RGK = 1k Ta = 100C, VD 430V, WP = 1.05s, IG = 70mA, dig/dt = 0.5A/s, 100kcycle*, See the examples of current waveforms 0.40.1 2.540.1 (Root dimension) 2.540.1 (Root dimension) 10.20.3 1 2 3 Current waveform (1cycle) * The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to (Ta=100C) cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles. Electrical Characteristics min typ max Unit Conditions On-state voltage VTM 1.4 V IT = 10A Gate trigger voltage VGT 1.5 V VD = 6V, RL = 10 Gate trigger current IGT (1) 20 mA VD = 6V, RL = 10 Gate non-trigger voltage Holding current 126 Symbol (Tj=25C) Ratings VGD 0.1 IH 2 5 V VD = 480V, Tj = 125C mA RG-K = 1k, Tj = 25C Off-state current (1) IDRM (1) 10 A VD = VDRM, RG-K = 1k, Tj = 25C Off-state current (2) IDRM (2) 1 mA VD = VDRM, RG-K = 1k, Tj = 125C Thermal resistance Rth 4.0 C/W Junction to case, With infinite heatsink Diode forward voltage VF 1.4 V IF = 10A V: 200A/div Parameter 2.60.2 (Root dimension) 11.00.5 Parameter a b Absolute Maximum Ratings 1.30.2 +0.3 (0.45) (5) 10.5 - 0.5 Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=600A Critical rate-of-rise of on-state current: di/dt=1600A/s Gate trigger current: I GT=20mA max With built-in reverse diode H: 2s/div * A single cycle operation consists of a continuous impression of 50 rounds with period T = 10ms followed by a rest time for the junction temperature of the element to cool down to 100C (= Ta). Repeat this cycle operation. Rectifier Diodes for Alternators Normal Type Part No. Absolute maximum ratings Tstg Tj IF (AV) IFSM (A) (A) (C) VRM (V) SG-9CNS SG-9CNR SG-9LCNS SG-9LCNR SG-9LLCNS SG-9LLCNR SG-10LS SG-10LR SG-10LXS SG-10LXR SG-10LLS SG-10LLR SG-10LLXS SG-10LLXR VF (V) max Electrical Characteristics IR VZ Condition (mA) (V) IF (A) max Condition IZ (mA) 200 20 200 -40 to +150 1.10 20 0.25 -- -- 200 30 300 -40 to +150 1.10 30 0.25 -- -- 200 35 350 -40 to +150 1.10 35 0.25 -- -- 200 30 300 -40 to +150 1.2 100 0.25 -- -- 150 35 350 -40 to +150 1.05 100 0.25 -- -- 200 40 400 -40 to +150 1.05 100 0.25 -- -- 150 45 450 -40 to +150 1.0 100 0.25 -- -- Fig. No. 1 2 3 Zener Type Part No. Absolute maximum ratings Tj Tstg IF (AV) IFSM (A) (A) (C) VRM (V) SG-9CZS SG-9CZR SG-9LLCZS SG-9LLCZR SG-10LZ23S SG-10LZ23R SG-10LLZ23S SG-10LLZ23R SG-14LXZS SG-14LXZR VF (V) max Electrical Characteristics IR VZ Condition (mA) (V) IF (A) max Condition IZ (mA) Fig. No. 17 20 200 -40 to +200 1.10 20 0.05 233 10 1 17 35 350 -40 to +200 1.10 35 0.05 233 10 2 17 30 300 -40 to +150 1.2 100 0.05 233 10 17 40 400 -40 to +150 1.05 100 0.05 233 10 16 35 350 -40 to +200 1.15 100 0.05 223 100 3 4 External Dimensions (unit: mm) 1.5 1.5 3.10.1 3.10.1 S: 19.01.0 R: 23.01.0 Fig. 2 S: 19.01.0 R: 23.01.0 Fig. 1 1 8.40.2 S type 5.0 Fig. 4 2 R type 12.84 11.5 1.26 S : 20.5 R : 28.5 (1.5) (4) (2) 24.0 2.0 R1.2 ) 3.0 4.2 5.0 ) 0.4 1.0 Polarity Polarity 0.6 4.0 4.7 8max 10max (30 3.6 1.4 (45 4.4 R type S type 9.0 0.3 2.5 (5.8) S type 10.7 13.5 10.0 9.50.2 R type Polarity 1.2 7.00.2 8.40.2 Fig. 3 50.4 Polarity 1.2 50.4 1 (R0.5) S type R type 127 High-voltage Diodes for Igniters Part No. VRM (kV) Electrical Characteristics (Ta=25C) Absolute Maximum Ratings IRSM IRSM IF (AV) (mA) (mA) (A) Peak value of 50 Hz Peak value single shot half-wave triangular of 50 Hz wave signal half-wave with 100s half-power average signal bandwidth SHV-01JN 0.5 30 30 3 SHV-05J 2.5 30 30 3 SHV-06JN 3.0 30 10 3 Tj Tstg VF (V) max (C) IR Vz (A) (kV) VR =VRM IR =100A IF (mA) max Condition 1 -40 to +150 5 10 10 6 Fig. No. 0.55 to 1.0 2 2.6 to 5.0 1 3.2 to 6.0 2 External Dimensions (unit: mm) Fig. 2 (SHV-06JN) 2.5 C0.5 0.2 2.50.2 0.5 0.5 Fig. 1 (SHV-05J) C0.5 27min 27min 50.2 128 27min 6.5 27min Power Zener Diode (Ta=25C) Absolute Maximum Ratings Part No. P (W) SFPZ-68 1 SJPZ-K28 * 1 SJPZ-E18 * 1 SJPZ-E27 * 1 SJPZ-E33 * 1 SJPZ-E36 * 1 PZ628 5 Condition (C) -40 to +150 25.0 to 31.0 1 10 1 2 -55 to +150 25.0 to 31.0 1 10 2 -- -55 to +150 16.8 to 19.1 1 10 2 -- -55 to +150 25.1 to 28.9 1 10 2 25 -- -55 to +150 31.0 to 35.0 1 10 2 27 -- -55 to +150 34.0 to 38.0 1 10 2 20 65*1 -40 to +150 25.0 to 31.0 10 50 3 VDC (V) I ZSM (A) 50 (5ms) 20 2 20 13 20 1500 (5ms) IR Fig. VR =VDC No. (A) IZ (mA) max VZ (V) 1mA instantaneous current PR (W) 85 (500s) Electrical Characteristics Tj Tstg SZ-10N27 5 -- 22 70*1 -55 to +175 24 to 30 10 10 4 SZ-10N40 * 5 -- 22 40*1 -55 to +175 36 to 40 10 10 4 SZ-10NN27 6 -- 22 90*1 -55 to +175 24 to 30 10 10 4 SZ-10NN40 * 6 -- 22 55*1 -55 to +175 36 to 40 10 10 4 Remarks Surface-mount type Axial type * 1: IZSM conditions IRSM IRSM Surface-mount type 2 0 10ms Time * under development External Dimensions (unit: mm) Fig. 1 Fig. 2 4.50.2 2.0min 5.1 Fig. 3 1.35 0.4 +0.4 -0.1 1.10.2 1.30.4 1.3 0.05 C2 Cathode marking 0.05-0.05 +0.1 +0.4 1.30.4 1.50.2 5.0 -0.1 1.50.2 Fig. 3 8.50.5 100.3 50.3 2.70.3 7.20.5 (9.75) 15.50.5 100.3 10.0 0.2 13.50.3 56.0 0.7 10.0 0.02 20.3 30.5 2.00.5 1.35 0.4 2.150.2 0.05 2.05 0.2 2.60.2 2.6 0.2 4.5 0.2 129 General-purpose Diodes Rectifier Diodes Surface-mount VRM (V) Part No. SFPM-52 I F (AV) (A) I FSM (A) Peak value of 50 Hz half-wave signal Tj (C) Tstg (C) I R (H) (mA) IR (A) VF (V) max Condition I F (A) VR=VRM max VR=VRM Condition Ta (C) max Rth (j-l) (C/W) Package Weight (g) 0.9 30 1.0 1.0 10 50 100 20 1 0.072 SFPM-62 1.0 45 0.98 1.0 10 50 100 20 1 0.072 SFPM-54 0.9 30 1.0 1.0 10 50 100 20 1 0.072 1.0 45 0.98 1.0 10 50 100 20 1 0.072 200 -40 to +150 400 SFPM-64 Ultra Fast Recovery Rectifier Diodes Surface-mount VRM (V) Part No. I F (AV) (A) I FSM (A) Peak value of 50 Hz half-wave signal Tj (C) Tstg (C) I R (H) (mA) IR (A) VF (V) max Condition I F (A) VR=VRM max t rr (ns) VR=VRM Condition Ta (C) max Condition I F/IRP (mA) t rr (ns) Condition I F/IRP (mA) Rth (j-l) (C/W) Package Weight (g) SFPL-52 0.9 25 0.98 1.0 10 1 150 (Tj) 50 100/100 35 100/200 20 1 0.072 SFPL-62 1.0 25 0.98 2.0 10 1 150 (Tj) 50 100/100 35 100/200 20 1 0.072 MPL-102S 10.0 65 0.98 5.0 100 0.2 150 40 100/100 30 100/200 2.5 2 1.4 MP2-202S 20.0 110 0.98 10.0 200 0.4 150 50 100/100 35 100/200 2.5 2 1.4 1.0 25 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 1 0.072 IR (A) I R (H) (mA) 200 400 SFPL-64 -40 to +150 Schottky Barrier Diodes Surface-mount Part No. VRM (V) I F (AV) (A) I FSM (A) Peak value of 50 Hz half-wave signal Tj (C) Tstg (C) VF (V) max Condition I F (A) VR=VRM max VR=VRM Condition Ta (C) max Rth (j-l) (C/W) Package Weight (g) SFPJ-53 * 30 1.0 30 0.45 1.0 1.0 35 150 20 1 0.072 SFPJ-63 30 2.0 40 0.45 2.0 2.0 70 150 20 1 0.072 SFPJ-73 30 3.0 50 0.45 3.0 3.0 100 150 20 1 0.072 SFPB-54 40 1.0 30 0.55 1.0 1 35 150 20 1 0.072 SFPB-64 40 2.0 60 0.55 2.0 5 70 150 20 1 0.072 SFPE-64 40 2.0 40 0.6 2.0 0.2 70 150 20 1 0.072 SFPB-74 40 3.0 60 0.5 2.0 5 100 150 20 1 0.072 SFPB-56 60 0.7 10 0.62 0.7 1 30 150 20 1 0.072 SFPW-56 60 1.5 25 0.7 1.5 1 70 150 20 1 0.072 SFPB-66 60 2.0 25 0.69 2.0 1 55 150 20 1 0.072 SFPB-76 60 2.0 40 0.62 2.0 2 70 150 20 1 0.072 SFPB-59 90 0.7 10 0.81 0.7 1 30 150 20 1 0.072 SFPB-69 90 1.5 40 0.81 1.5 2 55 150 20 1 0.072 -40 to +150 * under development External Dimensions (unit: mm) 0.7 c 4.9 0 to 0.25 1.15 0.1 2.29 0.5 2.29 0.5 0.8 0.1 a) Part No. b) Polarity c) Lot No. 0.5 0.2 1.1 0.2 1.2max b 2.5 0.4 0.05 +0.4 5.1 -0.1 1.35 0.4 0.16 2.9 5.5 0.4 2.6 0.2 2.05 0.2 2.0min 5.4 4.1 1.37 0.55 0.1 a 0.80.1 1.35 0.4 2.30.4 6.5 0.4 5.4 0.4 1.7 0.5 4.5 2: (TO-220S) 0.2 0.55 0.1 1.5 0.2 (Common with heatsink) 1.5 max N.C 130 5.0 1: (Surface-mount SFP) Cathode Anode General-purpose Diodes - Taping Specifications Taping Specifications Taping Name 1.35 0.4 2.0min Marking of Part No., Lot No., quantity, etc. 1.5 5.5 0.05 4.0 +0.1 -0 0.1 2.0 0.5 5.5 13 0.5 1,800 pcs. 65 1.35 0.4 12.0 0.3 2.05 0.2 + 0.1 0.05 -0.05 2.6 0.2 4.5 0.2 0.2 1.1 1.5 0.2 +0.4 5.1 - 0.1 Packaging Quantity Reel 1.75 0.1 Emboss taping V Packaging Dimensions (mm) and Markings Taping Dimensions (mm) 2.0 per reel 210.8 R1.0 2.6 Pull out direction 4.0 0.1 A suffix "V" is added to Part No. for tape packaging. 141.5 178 2 3.1 (1) The right side of the tape is the cathode viewing in the unfold direction. (2) The product is inserted into the case with the installed electrode on the lower side. (3) A leader tape 150 to 200mm long is provided on the unfolding edge. (4) A space of at least 10 pitches equivalent is provided on either end of the tape. (5) Taping with reversed diode polarity is available on request (taping name VL). 2.0 0.5 Power Surface-mount - Taping Specifications Taping Name Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Part No. Pull out direction Materials Disc: both-face white corrugated cardboard Core: foamed styrol Quantity VL Taping name (type) Packaging Quantity Lot No. 3,000 pcs. 1 3 8 10 1001 3302 130.2 40 60 22 B 20 11.50.1 per reel 4.90.1 80 (Seal part) 120.1 240.3 14.40.1 40.1 (Bottom dimensions) 21.50.1 20.1 120 10.80.1 (Seal part) R135 0.1 (Bottom dimensions) VR 25.51 29.51 0.40.1 2.5 Pull out direction (Cover tape) +0.1 1.5 0 1 3 8 10 A suffix "VL" is added to Part No. for tape packaging. 1.75 0.1 35 5.4max 3,000 pcs. 7 0.5 90.5 per reel 20.5 210.8 .5 0 5 A suffix "VR" is added to Part No. for tape packaging. .2 0 13 130.5 High-voltage diodes for ignition - Taping Specifications Taping Name Packaging Dimensions (mm) and Markings Taping Dimensions (mm) Packaging Quantity 50.5 Axial taping Part No. 1.2 max V1 Lot No. Quantity 1.5 1.0 max 6 1.0 58 1 6 1.0 25 A suffix "V1" is added to Part No. for tape packaging. per reel 1 29 75 1.5 5,000 pcs. 3402 131 General-purpose Diodes - Taping Specifications Power Zener Surface-mount - Taping Specifications Taping Name Packaging Dimensions (mm) and Markings Taping Dimensions (mm) Packaging Quantity Pull out direction VL 750 pcs. 1 3 B 4 VR R TYPE L TYPE 25.51 29.51 0.400.05 10.800.1 8 per reel 20.5 210.8 5 0. 5 0 13 .2 132 750 pcs. 90.5 7 0.5 8 A suffix "VR" is added to Part No. for tape packaging. 1001 3302 40 20 60 80 120 1.500.25 16.000.1 130.2 B 22 16.000.1 10 R135 Pull out direction per reel 5.640.1 4 11.500.1 2.000.1 +0.3 4.000.1 24.00-0.1 1.500.1 1 3 B 10 A suffix "VL" is added to Part No. for tape packaging. 1.750.1 35 130.5 The label showing the product name, quantity and production lot is attached to the reel. 3 LEDs 3-1. Uni-Color LED Lamps .............. 134 3-2. Bi-Color LED Lamps .................. 137 3-3. Surface Mount LEDs .................. 138 ..................................... 140 3-4. Infrared LEDs 3-5. Ultraviolet LEDs ............................... 141 3-6. Multi-chip Modules ..................... 142 133 General-purpose LEDs Uni-Color LED Lamps Absolute Maximum Ratings mW GaAsP A GaInP mA 30 mA /C - 0.45 I FP mA VR V Top C Tstg C Deep red High-intensity red Red Amber Orange Yellow Green Pure green Red Amber 5 Round Orange Yellow Green Pure green Ultra high-intensity red Ultra high-intensity orange Ultra high-intensity pure green Ultra high-intensity blue Ultra high-intensity blue Ultra high-intensity red Red Amber Orange Green Pure green Ultra high-intensity pure green Ultra high-intensity blue High-intensity red 4.65.6 Egg-shaped Ultra high-intensity red Green Deep red Red 4 Round Amber Orange Yellow GaN Conditions 120 IF Emitting color InGaN 75 I F Outline 134 GaP Above 25C 100 70 3 f=1kHz, tw=100s 5 -30 to +80 -30 to +85 -30 to +100 Part No. SEL1110R SEL1110W SEL1110S SEL1610W SEL1610C SEL1210R SEL1210S SEL1810D SEL1810A SEL1910D SEL1910A SEL1710Y SEL1710K SEL1410G SEL1410E SEL1510C SEL1210RM SEL1210SM SEL1810DM SEL1810AM SEL1910DM SEL1910AM SEL1710KM SEL1410GM SEL1410EM SEL1510CM SELU1210CXM SELU1910CXM-S SELU1D10CXM SELU1E10CXM SELS1E10CXM-M SELU1250CM SEL1250SM SEL1250RM SEL1850AM SEL1850DM SEL1950KM SEL1450EKM SEL1450GM-YG SEL1550CM SELU1D50CM SELU1E50CM SEL1615C SELU1253CMKT SEL1453CEMKT SEL4110S SEL4110R SEL4210S SEL4210R SEL4810A SEL4810D SEL4910A SEL4910D SEL4710K SEL4710Y VF (V) Lens color typ max 2.0 2.5 1.75 2.2 1.9 2.5 1.9 2.5 1.9 2.5 2.0 2.5 2.0 2.5 2.0 2.5 1.9 2.5 1.9 2.5 1.9 2.5 2.0 2.5 2.0 2.5 2.0 2.0 2.0 3.3 3.3 3.7 2.0 2.5 2.5 2.5 4.0 4.0 4.2 2.5 1.9 2.5 1.9 2.5 1.9 2.5 2.0 2.5 2.0 3.3 3.3 1.75 2.0 2.0 2.5 4.0 4.0 2.2 2.5 2.5 2.0 2.5 1.9 2.5 1.9 2.5 1.9 2.5 2.0 2.5 Diffused red Diffused white Tinted red Diffused white Clear Diffused red Tinted red Diffused orange Tinted orange Diffused orange Tinted orange Diffused yellow Tinted yellow Diffused green Tinted green Clear Diffused red Tinted red Diffused orange Tinted orange Diffused orange Tinted orange Tinted yellow Diffused green Tinted green Clear Clear Clear Clear Clear Clear Clear Tinted red Diffused red Tinted orange Diffused orange Tinted orange Tinted green Diffused green Clear Clear Clear Clear Clear Tinted green Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) p (nm) (mcd) Condition IF (mA) typ typ typ 2.8 5 2.8 625 700 4.5 250 20 642 660 300 26 20 620 630 75 18 10 605 610 37 14 10 590 587 25 22 10 571 570 65 32 20 567 560 84 20 50 559 555 36 20 620 630 75 18 10 605 610 37 19 10 590 587 34 10 65 571 570 30 20 567 560 84 20 50 559 555 20 280 625 635 20 450 589 591 20 2000 530 525 20 600 470 468 20 1000 470 468 20 900 625 635 75 20 620 630 48 90 20 605 610 60 20 96 590 587 190 20 567 560 120 20 72 559 555 20 6000 530 525 20 1850 470 468 20 170 642 660 20 200 625 635 20 140 567 560 2.4 5 625 700 1.7 30 20 620 630 17 20 10 605 610 15 26 10 590 587 16 36 10 571 570 14 Chip material Fig. No. Unit PD Contact mount Parameter (Ta=25C) Ratings GaA As GaP GaA As GaAsP GaAsP 1 GaAsP GaP GaP GaP GaAsP GaAsP GaAsP 2 GaP GaP GaP A GaInP A GaInP InGaN InGaN InGaN A GaInP 3 GaAsP GaAsP GaAsP 4 GaP GaP InGaN InGaN GaA As A GaInP GaP 5 6 GaP GaAsP GaAsP GaAsP GaP 7 General-purpose LEDs Emitting color Green Ultra high-intensity green Pure green Deep red Red 4 Round Amber Orange Yellow Green Pure green Deep red Red Amber Ultra high-intensity orange Orange Yellow Green Pure green Blue Ultra high-intensity deep red Ultra high-intensity red Red Amber Ultra high-intensity light amber Ultra high-intensity orange Orange 3 Round Ultra high-intensity yellow Yellow Green Ultra high-intensity green Deep green Pure green Ultra high-intensity pure green Ultra high-intensity blue Red Orange Yellow Green Pure green Deep red High-intensity red Ultra high-intensity deep red Red Amber Ultra high-intensity light amber Part No. SEL4410E SEL4410G SELU4410CKT-S SEL4510C SEL4114S SEL4114R SEL4214S SEL4214R SEL4814A SEL4814D SEL4914A SEL4914D SEL4714K SEL4714Y SEL4414E SEL4414G SEL4514C SEL6110S SEL6110R SEL6210S SEL6210R SEL6810A SEL6810D SELU6910C-S SEL6910A SEL6910D SEL6710K SEL6710Y SEL6410E SEL6410G SEL6510C SEL6510G SEL6E10C SELU6614C-S SELU6614W-S SELU6214C SEL6214S SEL6814A SELS6B14C SELU6914C-S SEL6914A SEL6914W SELU6714C SEL6714K SEL6714W SEL6414E SELU6414G-S SEL6414E-TG SEL6514C SELS6D14C SELS6E14C-M SEL6215S SEL6915A SEL6715C SEL6415E SEL6515C SEL2110S SEL2110R SEL2110W SEL2610C SELU2610C-S SEL2210S SEL2210R SEL2210W SEL2810A SEL2810D SELU2B10A-S Lens color Tinted green VF (V) typ max 2.0 2.5 2.1 2.0 2.5 2.5 2.0 2.5 1.9 2.5 1.9 2.5 1.9 2.5 2.0 2.5 2.0 2.5 2.0 2.5 2.0 2.5 1.9 2.5 1.9 2.5 2.0 2.5 1.9 2.5 2.0 2.5 2.0 2.5 2.0 2.5 4.0 4.8 2.0 2.5 2.0 1.9 1.9 2. 2.0 2.5 2.5 2.5 2.5 2.5 1.9 2.5 2.1 2.5 2.0 2.5 2.0 2.1 2.0 2.0 3.3 3.7 1.9 1.9 2.0 2.0 2.0 2.5 2.5 2.5 2.5 4.0 4.2 2.5 2.5 2.5 2.5 2.5 2.0 2.5 1.75 2.0 2.2 2.5 1.9 2.5 1.9 2.5 2.0 2.5 Diffused green Clear Clear Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Clear Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Diffused green Clear Clear Diffused white Clear Tinted red Tinted orange Clear Clear Tinted orange Diffused white Clear Tinted yellow Diffused white Tinted green Diffused green Tinted green Clear Clear Clear Tinted red Tinted orange Clear Tinted green Clear Tinted red Diffused red Diffused white Clear Clear Tinted red Diffused red Diffused white Tinted orange Diffused orange Tinted orange Electro-optical characteristics (Ta=25C) IV Peak wavelength Dominant wavelength (mcd) Condition p (nm) p (nm) typ typ typ IF (mA) 87 20 560 567 34 20 560 562 170 20 555 559 45 3.8 10 700 625 2.8 40 20 630 620 24 20 10 610 605 15 26 10 587 590 11 38 10 570 571 27 69 20 560 567 48 20 26 555 559 3.9 10 700 625 2.6 41 20 630 620 18 22 10 610 605 9.6 20 550 591 589 22 10 587 590 11 37 10 570 571 11 90 20 560 567 30 42 20 555 559 9.6 20 60 430 466 150 20 650 639 90 20 180 635 625 20 18 630 620 10 9.0 610 605 20 120 600 596 20 180 591 589 8.0 10 587 590 5.0 20 60 572 571 66 20 570 571 30 42 20 560 567 30 20 560 562 18 20 558 564 12 20 555 559 300 20 518 525 70 20 468 470 45 20 630 620 60 20 587 590 90 20 570 571 81 20 560 567 44 20 555 559 4 1.8 10 700 625 1.8 60 20 660 642 300 20 650 639 40 15 20 630 620 15 22 10 610 605 9.0 300 20 598 595 Chip material Fig. No. Outline Contact mount Uni-Color LED Lamps GaP A GaInP GaP 7 GaP GaAsP GaAsP GaAsP 8 GaP GaP GaP GaP GaAsP GaAsP A GaInP GaAsP 9 GaP GaP GaP GaN A GaInP A GaInP GaAsP GaAsP A GaInP A GaInP GaAsP A GaInP 10 GaP GaP A GaInP GaP GaP InGaN InGaN GaAsP GaAsP GaP GaP GaP 11 GaP GaA As A GaInP 12 GaAsP GaAsP A GaInP 135 General-purpose LEDs Emitting color Orange Ultra high-intensity yellow Yellow Green Pure green Ultra high-intensity pure green Ultra high-intensity blue 3 Round Blue Ultra high-intensity red Red Amber Orange Yellow Green Pure green Red Amber Orange Yellow Green Pure green Ultra high-intensity red Ultra high-intensity light amber Inverted-cone typ for surface illumination Green Deep green Pure green High-intensity red Red Amber Orange Yellow Green Pure green High-intensity red Ultra high-intensity deep red Ultra high-intensity red Red Ultra high-intensity amber 5mm Pitch lead rectangular Amber Ultra high-intensity light amber Orange Ultra high-intensity yellow Green Pure green Blue Ultra high-intensity red Red Amber Ultra high-intensity light amber Ultra high-intensity orange 5mm Pitch lead bow-shaped Orange Ultra high-intensity yellow Yellow Green Pure green Ultra high-intensity blue Blue 136 Part No. SEL2910A SEL2910D SELU2710C SEL2710K SEL2710Y SEL2410E SEL2410G SEL2510C SEL2510G SELU2D10C SELU2E10C SEL2E10C SELU2215R-S SEL2215S SEL2215R SEL2815A SEL2815D SEL2915A SEL2915D SEL2715K SEL2715Y SEL2415E SEL2415G SEL2515C SEL1213C SEL1813A SEL1913K SEL1713K SEL1413E SEL1513E SELU6213C-S SELS6B13W SEL6413E SEL6413E-TG SEL6513C SEL2613CS-S SEL2213C SEL2813A SEL2913K SEL2713K SEL2413E SEL2413G SEL2513E SEL5620C SELU5620S-S SELU5220C-S SEL5220S SELU5820C-S SEL5820A SELU5B20C SEL5920A SELU5720C SEL5420E SEL5520C SEL5E20C SELS5223C SEL5223S SEL5823A SELS5B23C SELS5923C SEL5923A SELU5723C SEL5723C SEL5423E SEL5523C SELU5E23C SEL5E23C Lens color Tinted orange VF (V) typ max 1.9 2.5 2.1 2.5 2.0 2.5 2.0 2.5 2.0 2.5 3.3 3.3 4.0 2.0 4.0 4.0 4.8 2.5 1.9 2.5 1.9 2.5 1.9 2.5 2.0 2.5 2.0 2.5 2.0 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 1.75 1.9 1.9 1.9 2.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.0 2.5 2.0 1.75 2.0 2.0 1.9 2.0 1.9 2.0 1.9 2.1 2.0 2.0 4.0 2.0 1.9 1.9 2.0 2.0 1.9 2.1 2.0 2.0 2.0 3.3 4.0 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.8 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.8 Diffused orange Clear Tinted yellow Diffused yellow Tinted green Diffused green Clear Diffused green Clear Clear Clear Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Tinted red Tinted orange Tinted light orange Tinted yellow Tinted green Tinted light green Clear Diffused white Tinted green Tinted green Clear Tinted light red Tinted red Tinted orange Tinted orange Tinted yellow Tinted green Diffused green Tinted green Clear Tinted red Clear Tinted red Clear Tinted orange Clear Tinted orange Clear Tinted green Clear Clear Clear Tinted red Tinted orange Clear Clear Tinted orange Clear Clear Tinted green Clear Clear Clear Electro-optical characteristics (Ta=25C) IV Peak wavelength Dominant wavelength (mcd) Condition p (nm) p (nm) typ typ typ IF (mA) 16 10 590 587 8.0 20 270 571 572 40 10 571 570 14 77 20 567 560 20 43 20 559 555 8.2 20 1200 530 525 20 400 470 468 20 60 466 430 20 380 624 632 45 20 620 630 38 80 10 605 610 60 81 10 590 587 53 130 10 571 570 110 110 20 567 560 72 20 52 559 555 20 7.0 620 630 20 8.0 605 610 20 8.0 590 587 20 15 571 570 20 12 567 560 20 5.0 559 555 20 30 624 632 20 60 596 600 20 14 567 560 20 6 564 558 20 5.0 559 555 20 20 642 660 20 7.0 620 630 20 8.0 605 610 20 8.0 590 587 20 17 571 570 14 20 567 560 12 20 5.0 559 555 20 100 642 660 20 100 639 650 20 120 624 632 20 20 620 630 20 150 605 611 20 12 605 610 20 120 596 600 20 12 590 587 20 50 571 572 20 20 567 560 20 6.0 559 555 20 10 466 430 20 100 625 635 20 25 620 630 20 35 605 610 20 135 596 600 20 145 589 591 20 35 590 587 20 155 571 572 20 60 571 570 20 40 567 560 20 13 559 555 20 180 470 468 20 20 466 430 Chip material Fig. No. Outline Contact mount Uni-Color LED Lamps GaAsP A GaInP GaP GaP 12 GaP InGaN InGaN GaN A GaInP GaAsP GaAsP GaAsP 13 GaP GaP GaP GaAsP GaAsP GaAsP GaP GaP GaP A GaInP A GaInP GaP GaP GaP GaA As GaAsP GaAsP GaAsP GaP 14 15 16 GaP GaP GaA As A GaInP A GaInP GaAsP A GaInP GaAsP A GaInP GaAsP A GaInP GaP GaP GaN A GaInP GaAsP GaAsP A GaInP A GaInP GaAsP A GaInP GaP GaP GaP InGaN GaN 17 18 General-purpose LEDs Bi-Color LED Lamps Absolute Maximum Ratings mW GaP GaAsP IF mA 30 I F mA /C -0.45 I FP mA 100 VR V Top C -30 to +85 Tstg C -30 to +100 Outline Part No. SML11516C SML1516W SML1216C SML1216W SML1816W 5 Round SML19416W SMLU12E16C SMLU12E16W SMLU12D16W SMLU18D16C SMLU18D16W-S SML72420C 3.36 Rectangular SML78420C SML79420C SML72423C SML72923C SML78423C 3.36 Bow-shaped SML79423C SMLS79723C SMLU72423C-S SMLU79423C-S A GaInP Also applies to simultaneous lighting Above 25C f=1kHz, tw=100s 3 Emitting color Conditions InGaN 120 75 5 Lens color Deep red Clear Pure green Deep red Diffused white Pure green Red Clear Green Red Diffused white Green Amber Diffused white Green Orange Diffused white Green Ultra high-intensity red Clear Ultra high-intensity blue Ultra high-intensity red Diffused white Ultra high-intensity blue Ultra high-intensity red Diffused white Ultra high-intensity pure green VF (V) Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) p (nm) (mcd) Condition typ typ typ IF (mA) Chip material typ max 2.0 2.5 15 20 700 625 GaP 2.0 2.5 50 20 555 559 GaP 2.0 2.5 6.0 20 700 625 GaP 2.0 2.5 20 20 555 559 GaP 1.9 2.5 65 20 630 620 GaAsP 2.0 2.5 90 20 560 567 GaP 1.9 2.5 60 20 630 620 GaAsP 2.0 2.5 60 20 560 567 GaP 1.9 2.5 50 20 610 605 GaAsP 2.0 2.5 60 20 560 567 GaP 1.9 2.5 45 20 587 590 GaAsP 2.0 2.5 60 20 560 567 GaP 2.0 2.5 500 20 632 624 A GaInP 3.3 4.0 400 20 468 470 InGaN 2.0 2.5 250 20 632 624 A GaInP 3.3 4.0 150 20 468 470 InGaN 2.0 2.5 250 20 632 624 A GaInP 3.3 4.0 700 20 525 530 InGaN A GaInP 2.0 2.5 800 20 611 605 Ultra high-intensity pure green 3.3 4.0 2000 20 525 530 InGaN Ultra high-intensity amber 2.0 2.5 300 20 611 605 A GaInP Ultra high-intensity pure green 3.3 4.0 500 20 525 530 InGaN Red 1.9 2.5 15 20 630 620 AGaAsP Green 2.0 2.5 20 20 560 567 GaP Amber 1.9 2.5 10 20 610 605 GaAsP Green 2.0 2.5 20 20 560 567 GaP Orange 1.9 2.5 10 20 587 590 GaAsP Green 2.0 2.5 20 20 560 567 GaP Red 1.9 2.5 25 20 630 620 GaAsP Green 2.0 2.5 35 20 560 567 GaP Red 1.9 2.5 25 20 630 620 GaAsP Orange 1.9 2.5 25 20 587 590 GaAsP Amber 1.9 2.5 25 20 610 605 GaAsP Green 2.0 2.5 35 20 560 567 GaP Orange 1.9 2.5 25 20 587 590 GaAsP 2.0 2.5 35 20 560 657 GaP 2.0 2.5 150 20 590 590 A GaInP 2.0 2.5 40 20 570 571 GaP 2.0 2.5 120 20 635 625 A GaInP 2.2 2.5 30 20 560 567 A GaInP 2.0 2.5 150 20 590 590 A GaInP 2.2 2.5 30 20 560 567 A GaInP Ultra high-intensity amber Clear Diffused white Clear Clear Clear Clear Clear Clear Clear Green Ultra high-intensity orange Clear Yellow Ultra high-intensity red Clear Ultra high-intensity green Ultra high-intensity orange Clear Ultra high-intensity green Common Fig. No. Unit PD Contact mount Parameter (Ta=25C) Ratings GaA As Cathode Cathode Cathode Cathode Cathode Cathode 19 Cathode Cathode Cathode Cathode Cathode Cathode Cathode 20 Cathode Cathode Cathode Cathode Cathode 21 Cathode Cathode Cathode 137 General-purpose LEDs Surface Mount LEDs Absolute Maximum Ratings (Ta=25C) Parameter Unit IF mA Ratings GaA As A GaInP 30 I F mA /C -0.45 I FP mA 70 VR V 4 Top C -30 to +85 Tstg C GaP GaAsP Conditions GaN InGaN Above 25C f=1kHz, tw=100s 5 -25 to +85 -30 to +100 Outline Emitting color Red Amber Orange Side view (flat lens type) Yellow Green Deep green Pure green Ultra high-intensity blue Red Amber Side view (inner lens type) Orange Yellow Green Deep green Pure green Deep red High-intensity red Red Amber Orange 31.5 (flat lens type) Yellow Green Deep green Pure green Ultra high-intensity pure green Ultra high-intensity blue Blue High-intensity red Ultra high-intensity red Red Ultra high-intensity amber 31.5 (inner lens type) Amber Ultra high-intensity orange Orange Yellow Green Deep green Pure green 138 Part No. SEC4201C SEC4801C SEC4901C SEC4701C SEC4401C SEC4401E-TG SEC4501C SECU4E01C SEC4203C SEC4803C SEC4903C SEC4703C SEC4403C SEC4403E-TG SEC4503C SEC1101C SEC1601C SEC1201C SEC1801C SEC1901C SEC1701C-YG SEC1401C SEC1401E-TG SEC1501C SECU1D01C SECU1E01C SEC1E01C SEC1603C SECS1203C SEC1203C SECS1803C SEC1803C SECS1903C SEC1903C SEC1703C SEC1403C SEC1403E-TG SEC1503C Lens color VF (V) Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) (mcd) p (nm) Condition IF (mA) typ typ typ Chip material typ max Clear 1.9 2.5 10 20 630 620 GaAsP Clear 1.9 2.5 16 20 610 605 GaAsP Clear 1.9 2.5 13 20 587 590 GaAsP Clear 2.0 2.5 25 20 570 571 GaP Clear 2.0 2.5 22 20 560 567 GaP Tinted green 2.0 2.5 11 20 558 564 GaP Clear 2.0 2.5 8.0 20 555 559 GaP Clear 3.3 4.0 50 20 468 470 InGaN Clear 1.9 2.5 15 20 630 620 GaAsP Clear 1.9 2.5 20 20 610 605 GaAsP Clear 1.9 2.5 15 20 587 590 GaAsP Clear 2.0 2.5 35 20 570 571 GaP Clear 2.0 2.5 33 20 560 567 GaP Tinted green 2.0 2.5 15 20 558 564 GaP Clear 2.0 2.5 10 20 555 559 GaP Clear 2.0 2.5 1.5 20 700 625 GaP Clear 1.7 2.2 25 20 660 642 GaA As Clear 1.9 2.5 10 20 630 620 GaAsP Clear 1.9 2.5 16 20 610 605 GaAsP Clear 1.9 2.5 13 20 587 590 GaAsP Clear 2.0 2.5 25 20 570 571 GaP Clear 2.0 2.5 22 20 560 567 GaP Tinted green 2.0 2.5 11 20 558 564 GaP Clear 2.0 2.5 8.0 20 555 559 GaP Clear 3.3 4.0 150 20 525 525 InGaN Clear 3.3 4.0 50 20 470 468 InGaN Clear 3.9 4.8 6.0 20 430 466 GaN Clear 1.7 2.2 35 20 660 642 GaA As Clear 1.9 2.5 100 20 635 625 A GaInP Clear 1.9 2.5 15 20 630 620 GaAsP Clear 1.9 2.5 10 3 615 607 A GaInP Clear 1.9 2.5 20 20 610 605 GaAsP Clear 1.9 2.5 70 20 590 590 A GaInP Clear 1.9 2.5 15 20 587 590 GaAsP Clear 2.0 2.5 35 20 570 571 GaP Clear 2.0 2.5 33 20 560 567 GaP Tinted green Clear 2.0 2.5 15 20 558 564 GaP 2.0 2.5 10 20 555 559 GaP Fig. No. Uni-Color Surface Mount LEDs 22 23 24 25 General-purpose LEDs Surface Mount LEDs Outline Part No. SEC2422C SEC2442C SEC2462C 32.5 (flat lens type) SEC2492C SEC2552C SEC2592C SEC2762C-YG SEC2484C SEC2554C 32.5 (inner lens type) SEC2494C SEC2764C SEC2774C Emitting color Red Green Green Green High-intensity red Green Orange Green Pure green Pure green Orange Pure green High-intensity red Yellow Amber Green Pure green Pure green Orange Green High-intensity red Yellow Yellow Yellow Lens color Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear VF (V) Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) p (nm) (mcd) Condition typ typ typ IF (mA) 20 10 620 630 Chip material typ 1.9 max 2.5 2.0 2.5 20 20 560 567 GaP 2.0 2.5 20 20 560 567 GaP 2.0 2.5 20 20 560 567 GaP 1.7 2.2 20 20 660 642 GaA As 2.0 2.5 20 20 560 567 GaP 1.9 2.5 10 20 587 590 GaAsP 2.0 2.5 20 20 560 567 GaP 2.0 2.5 5.0 20 555 559 GaP 2.0 2.5 5.0 20 555 559 GaP 1.9 2.5 10 20 587 590 GaAsP 2.0 2.5 5.0 20 555 559 GaP 1.7 2.2 20 20 660 642 GaA As 2.0 2.5 20 20 570 571 GaP 1.9 2.5 20 20 610 605 GaAsP 2.0 2.5 30 20 560 567 GaP 2.0 2.5 10 20 555 559 GaP 2.0 2.5 10 20 555 559 GaP 1.9 2.5 20 20 587 590 GaAsP 2.0 2.5 30 20 560 567 GaP 1.7 2.2 50 20 660 642 GaA As 2.0 2.5 50 20 570 571 GaP 2.0 2.5 50 20 570 571 GaP 2.0 2.5 50 20 570 571 GaP Fig. No. Uni-color / Bi-color Surface Mount LEDs with two elements GaAsP 26 27 139 General-purpose LEDs Infrared LEDs Absolute Maximum Ratings Parameter Unit (Ta=25C) Conditions Ratings IF mA 150 I F mA /C -1.33 Above 25C I FP mA 1000 f=1kHz, tw=10s VR V 5 Top C -30 to +85 Tstg C -30 to +100 Part No. typ 5 Round 3 Round 3 1.5 (inner lens type) chip 140 SID1010CM SID1K10CM SID1010CXM SID1K10CXM SID1050CM SID303C SID313BP SID1003BQ SID307BR SID1G307C SID1G313C SID2010C SID2K10C SEC1G03C Electro-optical characteristics (Ta=25C) Radiant intensity Ie Peak wavelength p (nm) (mW/sr) Condition max typ typ VF (V) Lens color Chip material Clear 1.3 1.5 130 940 GaAs Clear 1.3 1.5 200 940 GaAs Clear 1.3 1.5 80 940 GaAs Clear 1.3 1.5 110 940 GaAs Clear 1.3 1.5 250 940 GaAs Clear 1.3 1.5 80 940 GaAs Transparent light purple Transparent light navy blue Transparent dark navy blue 1.3 1.5 130 940 GaAs 1.3 1.5 180 940 GaAs 1.3 1.5 200 940 GaAs Clear 1.5 1.8 50 850 GaAs Clear 1.5 1.8 50 850 GaAs Clear 1.3 1.5 7 940 GaAs Clear 1.3 1.5 14 940 GaAs Clear 1.5 1.8 3 850 GaA As (Constant voltage) Vcc=3V, R=2.2 IF=50mA Fig. No. Outline Contact mount Infrared LEDs 28 29 30 31 25 General-purpose LEDs Ultraviolet LEDs Absolute Maximum Ratings Parameter (Ta=25C) Ratings Unit Conditions IF mA 30 I F mA /C -0.45 I FP mA 100 f=1kHz, tw=10s IR mA 100 Max. rating of built-in Zener diode Top C -30 to +85 Tstg C -30 to +100 Above 25C Ultraviolet Surface Mount LEDs 2.8 3.5 Part No. SECU1V0AC typ max IV (mcd) typ 3.7 4.0 2.2 Lens color Clear VF (V) Peak wavelength Condition IF(mA) p (nm) typ 20 385 (V) typ Condition Chip material Fig. No. Electro-optical characteristics (Ta=25C) Outline 4000 100pF, 1.5k InGaN 32 Electrostatic withstand voltage 141 General-purpose LEDs Multi-chip LED Module (under development) Absolute Maximum Ratings Parameter Ratings Conditions With an infinite heatsink mounted IF mA 40 I F mA /C -0.25 I FP mA 100 VR V 5 Topr C -30 to +85 Tstg C -30 to +100 f=1kHz, tw=10s Colors compliant with JIS-Z9112 Color temperature [K] 20mA Total flux [lm] 20mA Chromaticity x, y 20mA SEP8WD4001 Cool white 6400 30 0.32, 0.33 SEP8WN4001 Natural white 5000 30 0.34, 0.35 SEP8WE4001 White 4200 30 0.37, 0.37 SEP8WW4001 Warm white 3450 25 0.41, 0.38 SEP8WL4001 Light bulb 2875 25 0.44, 0.41 Part No. 142 (Per element Ta=25C) Unit Fig. No. 33 General-purpose LEDs - External Dimensions Cathode (1.0) 0.8 Anode 1.0min Resin burr 0.3max 7.70.5 23.5min 5.70.2 Resin heap 1.5max 5.60.2 0.50.1 1.1max 0.5 (2.54) 5.00.2 Cathode 0.5 Resin heap 1.5max 4.60.2 19.0min 0.8 Fig.6 7.60.2 4.70.2 20.0min 5.00.5 2-0.50.1 5.60.2 (2.54) Fig.1 0.65max (Unit: mm) Fig.2 Resin heap 1.5max 0.40.1 (1.5) 0.40.1 Resin heap 1.5max Cathode Resin heap 0.8max Fig.9 0.80.2 4.00.2 0.65max 5.00.2 (2.54) Cathode 5.50.5 3.50.1 Resin heap 0.8max Fig.10 0.8 1.1max 0.5 0.50.1 Resin heap 1.5max 4.00.2 23.0min 4.50.5 (1.6) 2.50.1 Cathode 0.40.1 3.5 (2.54) 5.00.2 Cathode 1.0min 4.4 3.5 0.65max 8.2 (1.0) (2.54) 19.0min 0.8 0.2 0.8 20.0min 5.5 0.5 0.2 5.6 0.2 0.450.1 Fig.5 23.0min (1.7) Cathode 0.40.1 9.40.3 21.0min 1.0min 1.0min 4.4 3.5 3.10.1 Resin heap 0.8max 0.50.1 0.65 max 0.50.1 Resin burr 0.3max (2.54) Anode 0.450.1 Fig.4 0.65max 0.450.1 4.8 0.65max 0.50.1 0.50.1 5.00.2 24.5min 2.2 (2.54) Cathode 1.0min Resin heap 1.5max (2.54) (1.0) 6.90.2 5.00.2 23.0min 1.5 1.1max 4.8 0.65max 0.50.1 1.0min 0.5 0.8 Fig.8 5.60.2 6.5 Cathode Fig.3 5.00.2 25.5min 2.2 (2.54) 0.50.1 1.0min 4.00.2 Cathode Fig.7 4.00.2 (1.0) 7.60.2 0.450.1 23.0min (2.54) 1.0min 5.00.2 5.60.2 Resin heap 0.8max 143 General-purpose LEDs - External Dimensions (Unit: mm) 2.60.1 25.8min 1.7 (2.54) 3.10.1 (1.3) 0.4 Resin heap 0.8max 0.4 0.1 Resin burr 0.3max Resin heap 1.5max 0.65max 0.450.1 0.65max 0.450.1 0.40.1 Cathode 1.0min 3.50.1 (2.54) 4.00.2 Cathode Fig.16 5.5 3.80.1 0.80.2 23.0min (1.7) Resin burr 0.3max 4.4 1.0min 3.5 3.10.1 Fig.11 6.00.2 1.0min 5.80.5 23.0min Resin heap 1.5max Cathode Cathode mark Resin burr 0.3max Resin heap 0.8max 0.50.1 3.1 3.6 6.00.2 3.60.2 3.9 6.2 0.65max 0.450.1 0.40.1 Cathode 3.30.2 Fig.18 0.5+0.1 4.00.1 (1.3) (5.0) 3.10.1 0.50.1 Cathode mark Resin burr 0.3max Resin heap 0.8max 0.65max Cathode 3.6 25.4min 4.20.5 23.0min 1.4 0.65max 0.450.1 Resin heap 1.5max (2.54) 1.55 1.0min 3.8 1.0min 6.2 (2.54) 3.8 0.4 Fig.17 0.65max (1.3) 1.7 Fig.13 3.50.1 0.50.1 25.8min (5.0) Cathode 1.0min 1.4 Fig.12 3.10.1 Cathode mark Fig.20 1.0min 1.5min 144 Resin burr 0.3max Resin heap 0.8max 5.00.2 Resin burr 0.3max Resin heap 1.5max 1.2 0.8 20.0min (2.54) (2.54) 6.2 3.50.1 0.65max Cathode 0.40.1 0.450.1 (2.54) 0.80.2 4.0 0.2 4.4 (1.7) 2.50.1 0.65max Resin heap 1.5max 4.5 10.60.5 1.0 7.60.2 3.9 6.00.2 23.0min 3 - 0.50.1 0.8 1.1max 0.50.1 1.0min 3.5 0.5 3.6 Resin burr 0.3max Resin heap 1.5max 3.3 Fig.15 2.0 0.50.1 0.5 (2.54) 0.5 1.0min 1.5min 17.0min 0.1 0.65max (1.0) 4.90.2 Cathode 19.0min 0.8 Fig.19 5.80.2 0.5+0.1 20.0min 5.00.5 (2.54) (2.54) 5.60.2 5.80.2 Fig.14 General-purpose LEDs - External Dimensions (Unit: mm) 5.80.5 3.9 2.5 1.5 1.0 0.9 1.0 1.5 2.0 3.0 3.60.2 Resin burr 0.3max Resin heap 1.5max Anode 3.10.2 0.50.1 0.65max 0.50.1 6.2 3.6 1.40.1 Cathode (0.5) 0.9 0.60.1 mark Cathode Fig.26 (2.54) (2.54) 1.0min 1.5min 20.0min 6.00.2 Fig.21 Resin B P.C.B. A Fig.22 SEC4001 P.C.B. Cathode mark 1.0 Cathode Resin MAX 0.1 1.40.1 Cathode (0.5) 0.9 0.60.1 mark Cathode 1.4 4-R0.35 1.0 1.5 (0.5) 2.0 3.0 0.9 1.5 0.9 1.0 (1.6) 2.5 1.5 (0.6) 2.0 1.5 3.0 2.5 Fig.27 Anode 0.1 Electrode burr Anode Lens 0.8 Resin P.C.B. 1.8 B 0.1 0.9 (0.5) Electrode burr MAX 0.1 0.45 1.6 2.0 1.7 o1.0 2.53 3.0 A Cathode 1.3 0.6 1.5 1.4 Cathode mark Fig.28 5.60.2 1.0min (1.0) 23.0min A 5.00.2 Fig.23 SEC4003 Cathode Anode 0.50.1 Fig.24 1.5 1.4 Cathode mark 0.9 (0.5) 1.3 Dimension A (mm) SID1010CM 7.60.2 SID1K10CM SID1010CXM 6.90.2 SID1K10CXM Resin burr 0.3max Resin heap 1.5max 1.6 1.5 2.0 3.0 0.6 Cathode 0.65max P.C.B. 0.50.1 Lens (2.54) Resin 0.50.1 1.03 P.C.B. Resin Anode 1.4 0.9 Cathode (0.5) Anode 1.3 (2.54) Cathode mark Lens Resin 0.50.1 Cathode 1.6 1.0 1.7 2.0 3.0 0.6 1.5 21.0min 9.40.3 5.00.2 Fig.25 1.0min 0.65 max 0.50.1 0.50.1 Fig.29 Resin burr 0.3max Resin heap 0.8max P.C.B. Anode 145 General-purpose LEDs - External Dimensions (Unit: mm) Fig.30 Fig.32 8.50.5 24.0min 2.0min A Anode Side view 3.5 3.2 (2.7) 1.4 0.2 2.8 (2.4) Cathode 1.1max 0.85+0.1 0.60.1 0.60.1 (2.54) 4.80.2 5.6 Surface (0.8) Resin burr 0.3max Resin heap 1.5max 0.60.1 Cathode Mark Side view Dimension A (mm) SID303C 3.00.5 SID313BP SID1003BQ SID307BR SID1G307C 3.60.5 Reverse Side 0.8 Inner circuit ZD 4.20.5 2.6 LED Anode Anode Fig.31 Cathode Fig.33 Resin: color White 13.2 Resin burr 0.3max Resin heap 1.5max 8.8 0.3 (0.8) 4.4 0.65max 0.40.1 0.450.1 12 11 10 9 16 15 14 13 (2.54) o3.8 0.4 3.5 12.0 10.0 (0.7) (1.3) 1.7 3.5 4.8 25.8min 5.8 1.0min 0.1 3.10.1 Cathode Heatsink 1 2.0 2 3 4 5 6 7 8 Mark 0.3 0.05 146 Cathode Resin 0.2 0.05 (0.5) 3.00.25 P1.0*3=3.0 0.25 Part Number Index in Alphanumeric Order Part No. Description Page Part No. Description Page Part No. Description Page 2SA1488/A Power transistor 80 SEC2422C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1513E 5o Inverted-cone LED for Surface illumination 136 2SA1567 Power transistor 81 SEC2442C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1550CM 5o Round Narrow-directivity LED, Direct mount supported 134 2SA1568 Power transistor 82 SEC2462C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1610C 5o Round Standard LED (With Stopper) 134 2SA1908 Power transistor 83 SEC2484C 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 139 SEL1610W 5o Round Standard LED (With Stopper) 134 2SB1622 Power transistor 84 SEC2492C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1615C 5o Round Narrow-directivity LED 134 2SC3852 Power transistor 85 SEC2494C 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 139 SEL1710K 5o Round Standard LED (With Stopper) 134 2SC4024 Power transistor 86 SEC2552C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1710KM 5o Round Standard LED 134 2SC4065 Power transistor 87 SEC2554C 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 139 SEL1710Y 5o Round Standard LED (With Stopper) 134 2SC4153 Power transistor 88 SEC2592C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1713K 5o Inverted-cone LED for Surface illumination 136 2SD2141 Power transistor 89 SEC2762C-YG 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1810A 5o Round Standard LED (With Stopper) 134 2SD2382 Power transistor 90 SEC2764C 139 SEL1810AM 5o Round Standard LED 134 2SD2633 Power transistor 91 SEC2774C 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 139 SEL1810D 5o Round Standard LED (With Stopper) 134 2SK3710 MOS FET 108 SEC4201C Side-view Surface Mount LED 138 SEL1810DM 5o Round Standard LED 134 2SK3711 MOS FET 109 SEC4203C Side-view Surface Mount Inner Lens TypeLED 138 SEL1813A 5o Inverted-cone LED for Surface illumination 136 2SK3724 MOS FET 110 SEC4401C Side-view Surface Mount LED 138 SEL1850AM 134 2SK3800 MOS FET 111 SEC4401E-TG Side-view Surface Mount LED 138 SEL1850DM 5o Round Narrow-directivity LED, Direct mount supported 5o Round Narrow-directivity LED, Direct mount supported 2SK3801 MOS FET 112 SEC4403C Side-view Surface Mount Inner Lens TypeLED 138 SEL1910A 5o Round Standard LED (With Stopper) 134 2SK3803 MOS FET 113 SEC4403E-TG Side-view Surface Mount Inner Lens TypeLED 138 SEL1910AM 5o Round Standard LED 134 2SK3851 MOS FET 114 SEC4501C Side-view Surface Mount LED 138 SEL1910D 5o Round Standard LED (With Stopper) 134 FKV460S MOS FET 115 SEC4503C Side-view Surface Mount Inner Lens TypeLED 138 SEL1910DM 5o Round Standard LED 134 FKV660S MOS FET 116 SEC4701C Side-view Surface Mount LED 138 SEL1913K 5o Inverted-cone LED for Surface illumination 136 FP812 Power transistor 92 SEC4703C Side-view Surface Mount Inner Lens TypeLED 138 SEL1950KM 5o Round Narrow-directivity LED, Direct mount supported 134 MN611S Power transistor 93 SEC4801C Side-view Surface Mount LED 138 SEL2110R 3o Round Type LED 135 MN638S Power transistor 94 SEC4803C Side-view Surface Mount Inner Lens TypeLED 138 SEL2110S 3o Round Type LED 135 MP2-202S Ultrafast Recovery Diode (Surface Mount) 130 SEC4901C Side-view Surface Mount LED 138 SEL2110W 3o Round Type LED 135 MPL-102S Ultrafast Recovery Diode (Surface Mount) 130 SEC4903C Side-view Surface Mount Inner Lens TypeLED 138 SEL2210R 3o Round Type LED 135 PZ628 Power Zener Diode (Surface Mount) 129 SECS1203C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL2210S 3o Round Type LED 135 SDA03 Power transistor Array (Surface Mount) 96 SECS1803C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL2210W 3o Round Type LED 135 SDA04 Power transistor Array (Surface Mount) 97 SECS1903C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL2213C 3o Inverted-cone LED for Surface illumination 136 SDC09 Power transistor Array (Surface Mount) 98 SECU1D01C 3 x 1.5 Surface Mount LED 138 SEL2215R 3o Round Type Narrow-directivity LED 136 SDH04 High-side Power Switch IC 24 SECU1E01C 3 x 1.5 Surface Mount LED 138 SEL2215S 3o Round Type Narrow-directivity LED 136 SDK06 MOS FET Array ( Surface mount ) 117 SECU1V0AC 2.8 x 3.5 Ultraviolet Surface Mount LED 141 SEL2410E 3o Round Type LED 136 SDK08 MOS FET Array ( Surface mount ) 118 SECU4E01C Side-view Surface Mount LED 138 SEL2410G 3o Round Type LED 136 SDK09 MOS FET Array ( Surface mount ) 119 SEL1110R 5o Round Standard LED (With Stopper) 134 SEL2413E 3o Inverted-cone LED for Surface illumination 136 SEC1101C 3 x 1.5 Surface Mount LED 138 SEL1110S 5o Round Standard LED (With Stopper) 134 SEL2413G 3o Inverted-cone LED for Surface illumination 136 SEC1201C 3 x 1.5 Surface Mount LED 138 SEL1110W 5o Round Standard LED (With Stopper) 134 SEL2415E 3o Round Type Narrow-directivity LED 136 SEC1203C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1210R 5o Round Standard LED (With Stopper) 134 SEL2415G 3o Round Type Narrow-directivity LED 136 SEC1401C 3 x 1.5 Surface Mount LED 138 SEL1210RM 5o Round Standard LED 134 SEL2510C 3o Round Type LED 136 SEC1401E-TG 3 x 1.5 Surface Mount LED 138 SEL1210S 5o Round Standard LED (With Stopper) 134 SEL2510G 3o Round Type LED 136 SEC1403C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1210SM 5o Round Standard LED 134 SEL2513E 3o Inverted-cone LED for Surface illumination 136 SEC1403E-TG 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1213C 5o Inverted-cone LED for Surface illumination 136 SEL2515C 3o Round Type Narrow-directivity LED 136 SEC1501C 3 x 1.5 Surface Mount LED 138 SEL1250RM 134 SEL2610C 3o Round Type LED 135 SEC1503C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1250SM 5o Round Narrow-directivity LED, Direct mount supported 5o Round Narrow-directivity LED, Direct mount supported 134 SEL2613CS-S 3o Inverted-cone LED for Surface illumination 136 SEC1601C 3 x 1.5 Surface Mount LED 138 SEL1410E 5o Round Standard LED (With Stopper) 134 SEL2710K 3o Round Type LED 136 SEC1603C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1410EM 5o Round Standard LED 134 SEL2710Y 3o Round Type LED 136 SEC1701C-YG 3 x 1.5 Surface Mount LED 138 SEL1410G 5o Round Standard LED (With Stopper) 134 SEL2713K 3o Inverted-cone LED for Surface illumination 136 SEC1703C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1410GM 5o Round Standard LED 134 SEL2715K 3o Round Type Narrow-directivity LED 136 SEC1801C 3 x 1.5 Surface Mount LED 138 SEL1413E 5o Inverted-cone LED for Surface illumination 136 SEL2715Y 3o Round Type Narrow-directivity LED 136 SEC1803C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1450EKM 134 SEL2810A 3o Round Type LED 135 SEC1901C 3 x 1.5 Surface Mount LED 138 SEL1450GM-YG 5o Round Narrow-directivity LED, Direct mount supported 5o Round Narrow-directivity LED, Direct mount supported 134 SEL2810D 3o Round Type LED 135 SEC1903C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1453CEMKT 4.6 x 5.6o Egg-shaped LED 134 SEL2813A 3o Inverted-cone LED for Surface illumination 136 SEC1E01C 3 x 1.5 Surface Mount LED 138 SEL1510C 5o Round Standard LED (With Stopper) 134 SEL2815A 3o Round Type Narrow-directivity LED 136 SEC1G03C 3 x 1.5 Infrared Surface Mount Inner Lens Type LED 140 SEL1510CM 5o Round Standard LED 134 SEL2815D 3o Round Type Narrow-directivity LED 136 134 147 Part Number Index in Alphanumeric Order Part No. Page Part No. Description Page Part No. Description Page SEL2910A 3o Round Type LED 136 SEL6410G 3o Round Type LED, Direct mount supported 135 SEL2910D 3o Round Type LED 136 SEL6413E 136 SEL2913K 3o Inverted-cone LED for Surface illumination 136 SEL6413E-TG SEL2915A 3o Round Type Narrow-directivity LED 136 SEL6414E SEL2915D 3o Round Type Narrow-directivity LED 136 SEL6414E-TG SEL2E10C 3o Round Type LED 136 SEL6415E 3o Inverted-cone LED for Surface illumination, Direct mount supported 3o Inverted-cone LED for Surface illumination, Direct mount supported 3o Round Type Wide-directivity LED, Direct mount supported 3o Round Type Wide-directivity LED, Direct mount supported 3o Round Type Narrow-directivity LED, Direct mount supported SEL4110R 4o Round Type LED 134 SEL6510C 3o Round Type LED, Direct mount supported 135 SEL4110S 4o Round Type LED 134 SEL6510G 3o Round Type LED, Direct mount supported 135 Pitch Lead Rectangular LED, SELU5B20C 5mm Direct mount supported Pitch Lead Bow-shaped LED, SELU5E23C 5mm Direct mount supported 3o Inverted-cone LED for Surface illumination, SELU6213C-S Direct mount supported Round Type Wide-directivity LED, SELU6214C 3o Direct mount supported 3o Round Type Wide-directivity LED, SELU6414G-S Direct mount supported Round Type Wide-directivity LED, SELU6614C-S 3o Direct mount supported 3o Round Type Wide-directivity LED, SELU6614W-S Direct mount supported Round Type Wide-directivity LED, SELU6714C 3o Direct mount supported SEL4114R 135 SEL6513C 136 SELU6910C-S 135 SEL6514C 135 SELU6914C-S 3o Round Type Wide-directivity LED, Direct mount supported 135 SEL4210R 4o Round Type LED 134 SEL6515C 3o Inverted-cone LED for Surface illumination, Direct mount supported 3o Round Type Wide-directivity LED, Direct mount supported 3o Round Type Narrow-directivity LED, Direct mount supported 3o Round Type LED, Direct mount supported SEL4114S 4o Round Type Wide-directivity LED, Direct mount supported 4o Round Type Wide-directivity LED, Direct mount supported 135 SEP8WD4001 Multi-chip LED Module 142 SEL4210S 4o Round Type LED 134 SEL6710K 3o Round Type LED, Direct mount supported 135 SEP8WE4001 Multi-chip LED Module 142 SEL4214R 135 SEL6710Y 3o Round Type LED, Direct mount supported 135 SEP8WL4001 Multi-chip LED Module 142 SEL4214S 4o Round Type Wide-directivity LED, Direct mount supported 4o Round Type Wide-directivity LED, Direct mount supported 135 SEL6714K 135 SEP8WN4001 Multi-chip LED Module 142 SEL4410E 4o Round Type LED 135 SEL6714W 135 SEP8WW4001 Multi-chip LED Module 142 SEL4410G 4o Round Type LED 135 SEL6715C 3o Round Type Wide-directivity LED, Direct mount supported 3o Round Type Wide-directivity LED, Direct mount supported 3o Round Type Narrow-directivity LED, Direct mount supported 135 SFPB-54 Schottky Barrier Diode(Surface Mount) 130 SEL4414E 135 SEL6810A 3o Round Type LED, Direct mount supported 135 SFPB-56 Schottky Barrier Diode(Surface Mount) 130 SEL4414G 4o Round Type Wide-directivity LED, Direct mount supported 4o Round Type Wide-directivity LED, Direct mount supported 135 SEL6810D 3o Round Type LED, Direct mount supported 135 SFPB-59 Schottky Barrier Diode(Surface Mount) 130 SEL4510C 4o Round Type LED 135 SEL6814A 3o Round Type Wide-directivity LED, Direct mount supported 135 SFPB-64 Schottky Barrier Diode(Surface Mount) 130 SEL4514C 4o Round Type Wide-directivity LED, Direct mount supported 135 SEL6910A 3o Round Type LED, Direct mount supported 135 SFPB-66 Schottky Barrier Diode(Surface Mount) 130 SEL4710K 4o Round Type LED 134 SEL6910D 3o Round Type LED, Direct mount supported 135 SFPB-69 Schottky Barrier Diode(Surface Mount) 130 SEL4710Y 4o Round Type LED 134 SEL6914A 135 SFPB-74 Schottky Barrier Diode(Surface Mount) 130 SEL4714K 135 SEL6914W 135 SFPB-76 Schottky Barrier Diode(Surface Mount) 130 SEL4714Y 4o Round Type Wide-directivity LED, Direct mount supported 4o Round Type Wide-directivity LED, Direct mount supported 135 SEL6915A 3o Round Type Wide-directivity LED, Direct mount supported 3o Round Type Wide-directivity LED, Direct mount supported 3o Round Type Narrow-directivity LED, Direct mount supported 135 SFPE-64 Schottky Barrier Diode(Surface Mount) 130 SEL4810A 4o Round Type LED 134 SEL6E10C 3o Round Type LED, Direct mount supported 135 SFPJ-53 Schottky Barrier Diode(Surface Mount) 130 SEL4810D 4o Round Type LED 134 SELS1E10CXM-M 5o Round Wide-directivity LED 134 SFPJ-63 Schottky Barrier Diode(Surface Mount) 130 SEL4814A 135 SELS5223C SFPJ-73 Schottky Barrier Diode(Surface Mount) 130 135 SELS5923C 136 SFPL-52 Ultrafast Recovery Diode(Surface Mount) 130 SEL4910A 4o Round Type LED 134 SELS5B23C 136 SFPL-62 Ultrafast Recovery Diode(Surface Mount) 130 SEL4910D 4o Round Type LED 134 SELS6B13W 136 SFPL-64 Ultrafast Recovery Diode(Surface Mount) 130 SEL4914A 135 SELS6B14C 135 SFPM-52 Rectifier Diode(Surface Mount) 130 135 SELS6D14C 135 SFPM-54 Rectifier Diode(Surface Mount) 130 136 SELS6E14C-M 135 SFPM-62 Rectifier Diode(Surface Mount) 130 136 SELU1210CXM 5o Round Wide-directivity LED 134 SFPM-64 Rectifier Diode(Surface Mount) 130 136 SELU1250CM 5o Round Narrow-directivity LED, Direct mount supported 134 SFPW-56 Schottky Barrier Diode(Surface Mount) 130 136 SELU1253CMKT 4.6 x 5.6o Egg-shaped LED 134 SFPZ-68 Power Zener Diode 129 136 SELU1910CXM-S 5o Round Wide-directivity LED 134 SG-9CNR Rectifier Diode for Alternator 127 136 SELU1D10CXM 5o Round Wide-directivity LED 134 SG-9CNS Rectifier Diode for Alternator 127 136 SELU1D50CM 5o Round Narrow-directivity LED, Direct mount supported 134 SG-9CZR Rectifier Diode for Alternator 127 136 SELU1E10CXM 5o Round Wide-directivity LED 134 SG-9CZS Rectifier Diode for Alternator 127 136 SELU1E50CM 5o Round Narrow-directivity LED, Direct mount supported 134 SG-9LCNR Rectifier Diode for Alternator 127 136 SELU2215R-S 3o Round Type Narrow-directivity LED 136 SG-9LCNS Rectifier Diode for Alternator 127 136 SELU2610C-S 3o Round Type LED 135 SG-9LLCNR Rectifier Diode for Alternator 127 136 SELU2710C 3o Round Type LED 136 SG-9LLCNS Rectifier Diode for Alternator 127 136 SELU2B10A-S 3o Round Type LED 135 SG-9LLCZR Rectifier Diode for Alternator 127 SEL5E23C 4o Round Type Wide-directivity LED, Direct mount supported 4o Round Type Wide-directivity LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 3o Inverted-cone LED for Surface illumination, Direct mount supported 3o Round Type Wide-directivity LED, Direct mount supported 3o Round Type Wide-directivity LED, Direct mount supported 3o Round Type Wide-directivity LED, Direct mount supported 136 SEL4814D 4o Round Type Wide-directivity LED, Direct mount supported 4o Round Type Wide-directivity LED, Direct mount supported 136 SELU2D10C 3o Round Type LED 136 SG-9LLCZS Rectifier Diode for Alternator 127 SEL6110R 3o Round Type LED, Direct mount supported 135 SELU2E10C 3o Round Type LED 136 SG-10LLR Rectifier Diode for Alternator 127 SEL6110S 3o Round Type LED, Direct mount supported 135 SELU4410CKT-S 4o Round Type LED 135 SG-10LLS Rectifier Diode for Alternator 127 SEL6210R 3o Round Type LED, Direct mount supported 135 SELU5220C-S 136 SG-10LLXR Rectifier Diode for Alternator 127 SEL6210S 3o Round Type LED, Direct mount supported 135 SELU5620S-S 136 SG-10LLXS Rectifier Diode for Alternator 127 SEL6214S 135 SELU5720C 136 SG-10LLZ23R Rectifier Diode for Alternator 127 SEL6215S 3o Round Type Wide-directivity LED, Direct mount supported 3o Round Type Narrow-directivity LED, Direct mount supported 135 SELU5723C 136 SG-10LLZ23S Rectifier Diode for Alternator 127 SEL6410E 3o Round Type LED, Direct mount supported 135 SELU5820C-S 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 136 SG-10LR Rectifier Diode for Alternator 127 SEL4914D SEL5220S SEL5223S SEL5420E SEL5423E SEL5520C SEL5523C SEL5620C SEL5723C SEL5820A SEL5823A SEL5920A SEL5923A SEL5E20C 148 Description 136 135 135 135 136 135 136 136 135 135 135 135 135 Part Number Index in Alphanumeric Order Part No. Description Page Part No. Description Page SG-10LS Rectifier Diode for Alternator 127 SML1516W 5o Round Standard Bicolor LED 137 SG-10LXR Rectifier Diode for Alternator 127 SML1816W 5o Round Standard Bicolor LED 137 SG-10LXS Rectifier Diode for Alternator 127 SML19416W 5o Round Standard Bicolor LED 137 SG-10LZ23R Rectifier Diode for Alternator 127 SML72420C 3.3 x 6 Rectangular Type Bicolor LED 137 SG-10LZ23S Rectifier Diode for Alternator 127 SML72423C 3.3 x 6 Bow-Shaped Type Bicolor LED 137 SG-14LXZS Rectifier Diode for Alternator 127 SML72923C 3.3 x 6 Bow-Shaped Type Bicolor LED 137 SG-14LXZS Rectifier Diode for Alternator 127 SML78420C 3.3 x 6 Rectangular Type Bicolor LED 137 SHV-01JN High-Voltage Rectifier Diode for Ignition Coil 128 SML78423C 3.3 x 6 Bow-Shaped Type Bicolor LED 137 SHV-05J High-Voltage Rectifier Diode for Ignition Coil 128 SML79420C 3.3 x 6 Rectangular Type Bicolor LED 137 SHV-06JN High-Voltage Rectifier Diode for Ignition Coil 128 SML79423C 3.3 x 6 Bow-Shaped Type Bicolor LED 137 SI-3001S Linear Regulator IC 8 SMLS79723C 3.3 x 6 Bow-Shaped Type Bicolor LED 137 SI-3003S Linear Regulator IC 10 SMLU12D16W 5o Round Standard Bicolor LED 137 SI-3101S Linear Regulator IC 12 SMLU12E16C 5o Round Standard Bicolor LED 137 SI-3102S Linear Regulator IC 14 SMLU12E16W 5o Round Standard Bicolor LED 137 SI-3201S Switching Regulator IC 22 SMLU18D16C 5o Round Standard Bicolor LED 137 SI-3322S System Regulator IC 16 SMLU18D16W-S 5o Round Standard Bicolor LED 137 SI-5151S High-side Power Switch IC 26 SMLU72423C-S 3.3 x 6 Bow-Shaped Type Bicolor LED 137 SI-5152S High-side Power Switch IC 28 SMLU79423C-S 3.3 x 6 Bow-Shaped Type Bicolor LED 137 SI-5153S High-side Power Switch IC 30 SPF0001 Power transistor Array (Surface Mount) 100 SI-5154S High-side Power Switch IC 32 SPF3004 System Regulator IC 18 SI-5155S High-side Power Switch IC 34 SPF3006 System Regulator IC 20 SI-5300 Full-bridge Motor Driver IC 60 SPF5002A Low-side Power Switch IC 50 SID1003BQ 5o Round Infrade LED 140 SPF5003 High-side Power Switch IC 40 SID1010CM 5o Round Infrade LED 140 SPF5004 High-side Power Switch IC 42 SID1010CXM 5o Round Infrade LED 140 SPF5007 High-side Power Switch IC 44 SID1050CM 5o Round Infrade LED, Direct mount supported 140 SPF5009 Low-side Power Switch IC 52 SID1G307C 5o Round Infrade LED 140 SPF5012 Low-side Power Switch IC 54 SID1G313C 5o Round Infrade LED 140 SPF5017 High-side Power Switch IC 46 SID1K10CM 5o Round Infrade LED 140 SPF5018 High-side Power Switch IC 48 SID1K10CXM 5o Round Infrade LED 140 SPF7211 Stepper-motor Driver IC 58 SID2010C 3o Round Infrade LED 140 SPF7301 Full-bridge Motor Driver IC 62 SID2K10C 3o Round Infrade LED 140 SSD103 Power transistor 95 SID303C 5o Round Infrade LED 140 STA315A Power transistor Array 101 SID307BR 5o Round Infrade LED 140 STA335A Power transistor Array 102 SID313BP 5o Round Infrade LED 140 STA415A Power transistor Array 103 SJPZ-E18 Power Zener Diode (Surface Mount) 129 STA460C Power transistor Array 104 SJPZ-E27 Power Zener Diode (Surface Mount) 129 STA461C Power transistor Array 105 SJPZ-E33 Power Zener Diode (Surface Mount) 129 STA463C Power transistor Array 106 SJPZ-E36 Power Zener Diode (Surface Mount) 129 STA464C Power transistor Array 107 SJPZ-K28 Power Zener Diode (Surface Mount) 129 STA508A MOS FET Array 123 SLA2402M High Voltage Driver IC for HID Lamps 64 STA509A MOS FET Array 124 SLA2403M High Voltage Driver IC for HID Lamps 68 SZ-10N27 Power Zener Diode (Surface Mount) 129 SLA2501M High-side Power Switch IC 36 SZ-10N40 Power Zener Diode (Surface Mount) 129 SLA2502M High-side Power Switch IC 38 SZ-10NN27 Power Zener Diode (Surface Mount) 129 SLA4708M Stepper-motor Driver IC 56 SZ-10NN40 Power Zener Diode (Surface Mount) 129 SLA5027 MOS FET Array 120 TFC561D 125 SLA5098 MOS FET Array 121 TFC562D 3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition 3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition SLA8004 Power transistor Array 99 SMA2409M High Voltage Driver IC for HID Lamps 72 SMA5113 MOS FET Array 122 SML11516C 5o Round Standard Bicolor LED 137 SML1216C 5o Round Standard Bicolor LED 137 SML1216W 5o Round Standard Bicolor LED 137 126 149 *http://www.sanken-ele.co.jp SANKEN ELECTRIC CO.,LTD. ISO 9001/14001 Certified Sanken products are manufactured and delivered to the customer based on a strict quality and environmental control system established and certified by the ISO 9001/14001 international certification standards. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo Tel: 81-3-3986-6164 Fax: 81-3-3986-8637 IProducts: Power IC, Control IC, Hall IC, Bipolar Transistor, MOS FET, IGBT, Thyristor, Rectifier Diode, LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp), Switching Power Supply, UPS (Uninterruptible Power Supply), DC Power Supply, Inverter, Universal Airway Beacon System and Other Power Supplies and Equipments Overseas Sales Offices Asia Singapore North America Sanken Electric Singapore Pte. Ltd. 115 Northeast Cutoff, Worcester, MA 01606 General Information Tel: 1-508-853-5000 Fax: 1-508-853-3353 150 Beach Road, #14-03 The Gateway West Singapore 189720, Singapore Tel: 65-6291-4755 Fax: 65-6297-1744 China Sanken Electric Hong Kong Co., Ltd. Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852-2735-5262 Fax: 852-2735-5494 Allegro MicroSystems, Inc. Europe Sanken Power Systems (UK) Ltd. Abercynon, Mountain Ash, Mid Glamorgan CF45 4XA, U.K. Tel: 44-1443-742-333 Fax: 44-1443-743-354 Sanken Electric (Shanghai) Co., Ltd. Room 3202, Maxdo Centre, Xingyi Road 8 Changning district, Shanghai, China Tel: 86-21-5208-1177 Fax: 86-21-5208-1757 Korea Sanken Electric Korea Co., Ltd. Mirae Asset Life Bldg., 6F 168, Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea Tel: 82-2-714-3700 Fax: 82-2-3272-2145 Taiwan Taiwan Sanken Electric Co., Ltd. Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161 Fax: 886-2-2356-8261 The information contained in this document is correct as of July 2006. *This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following: 1. Resell or retransfer these products/technology to any party intending to disturb international peace and security. 2. Use these products/technology yourself for activities disturbing international peace and security. 3. Allow any other party to use these products/technology for activities disturbing international peace and security. Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad. This document uses 100% recycled paper. H1-C01ED0-0607020TA