Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors TIP31/31A/31B/31C TRANSISTOR (NPN) FEATURES Power dissipation TO-220 1. BASE PCM: 2 W (Tamb=25) 2. COLLECTOR Collector current ICM: 3 A Collector-base voltage V(BR)CBO: TIP31: 40 V TIP31A: 60 V TIP31B: 80 V TIP31C: 100 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions 31A 31B Collector-emitter breakdown voltage V(BR)CBO Ic= 100 A, IE=0 100 40 V(BR)CEO Ic= 30 mA, IB=0 60 V 80 100 31C V(BR)EBO Emitter-base breakdown voltage UNIT V 80 31 31B Collector cut-off current 60 31C 31A MAX 40 31 Collector-base breakdown voltage MIN 31 31A 31B 31C ICBO 31/31A 31B/31C ICEO IE= 100A, IC=0 5 VCB= 40V, IE=0 VCB= 60V, IE=0 VCB= 80V, IE=0 VCB= 100V, IE=0 V 0.2 mA VCE= 30V , IB= 0 0.3 VCE= 60V , IB= 0 0.3 IEBO VEB=5V, IC=0 1 hFE(1) VCE= 4V, IC= 3A 10 hFE(2) VCE= 4V, IC= 1A 25 Collector-emitter saturation voltage VCE(sat) IC=3A, IB=375mA 1.2 V Base-emitter VBE(on) VCE= 4V, IC=3A 1.8 V fT VCE=10V , IC=500mA Collector cut-off curremt Emitter cut-off current mA mA 50 DC current gain voltage Transition frequency 3 MHZ