BCV46T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 08 2004 Jan 13

DISCRETE SEMICONDUCTORS

BCV26; BCV46

PNP Darlington transistors

2004 Jan 13 2

NXP Semiconductors Product data sheet

PNP Darlington transistors BCV26; BCV46

FEATURES

•High current (max. 500 mA)

•Low voltage (max. 60 V)

•Very high DC current gain (min . 10 000).

APPLICATIONS

•Where very high amplification is required.

DESCRIPTION

PNP Darlington transistor in a SOT23 plastic package.

NPN complements: BCV27 and BCV47.

MARKING

Note

1. * = p : Made in Hong Kong .

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

BCV26 FD*

BCV46 FE*

PIN DESCRIPTION

1base

2emitter

3collector

Fig.1 Simplified outline (SOT23 ) and symbo l .

handbook, halfpage

MAM299

TR2

TR1

Top view

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BCV26 −plastic surface mounted pa ckage; 3 leads SOT23

BCV46

2004 Jan 13 3

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BCV26; BCV46

LIMITING VALUES

In accordance with th e Absolute Ma ximum Ratin g System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit boar d.

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-circuit boar d.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter

BCV26 − −40 V

BCV46 − −80 V

VCES collector-emitter voltage VBE = 0

BCV26 − −30 V

BCV46 − −60 V

VEBO emitter-base voltage open collector − −10 V

ICcollector current (DC) − −500 mA

ICM peak collector current − −800 mA

IBbase current (DC) − −100 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

2004 Jan 13 4

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BCV26; BCV46

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current

BCV26 IE = 0; VCB = −30 V − − −100 nA

BCV46 IE = 0; VCB = −60 V − − −100 nA

IEBO emitter cut-off current IC = 0; VEB = −10 V − − −100 nA

hFE DC current gain IC = −1 mA; VCE = −5 V; (see Fig.2)

BCV26 4 000 − −

BCV46 2 000 − −

DC current gain IC = −10 mA; VCE = −5 V ; (see Fig.2)

BCV26 10 000 − −

BCV46 4 000 − −

DC current gain IC = −100 mA; VCE = −5 V; (see Fig.2)

BCV26 20 000 − −

BCV46 10 000 − −

VCEsat collector-emitter saturation

voltage IC = −100 mA; IB = −0.1 mA − − −1 V

VBEsat base-emitt er saturation voltage IC = −100 mA; IB = −0.1 mA − − −1.5 V

VBEon base-emitter on-state voltage IC = −10 mA; VCE = −5 V − − −1.4 V

fTtransition freque ncy IC = −30 mA; VCE = −5 V; f = 100 MHz −220 −MHz

Fig.2 DC current gain; typical values.

VCE = −2 V.

handbook, full pagewidth

100000

20000

40000

60000

80000

hFE

MGD836

−1−10 IC (mA)

−102−103

2004 Jan 13 5

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BCV26; BCV46

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2004 Jan 13 6

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BCV26; BCV46

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this do cument was publishe d

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

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not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reas onably be

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property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, exc ept for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/05/pp7 Date of release: 2004 Jan 13 Document orde r number: 9397 750 12401