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FQP12N60C / FQPF12N60C Rev. B1
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
September 2007
QFET®
FQP12N60C / FQPF12N60C
600V N-Channel MOSFET
Features
12A, 600V, RDS(on) = 0.65 @VGS = 10 V
Low gate charge ( typical 48 nC)
Low Crss ( typical 21pF)
•Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
TO-220F
FQPF Series
GS
D
D
G
S
Symbol Parameter FQP12N60C FQPF12N60C Unit
VDSS Drain-Source Voltage 600 V
IDDrain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
12
7.4
12*
7.4*
A
A
IDM Drain Current - Pulsed (Note 1) 48 48* A
VGSS Gate-Source voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 870 mJ
IAR Avalanche Current (Note 1) 12 A
EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C)
- Derate above 25°C
225
1.78
51
0.41
W
W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 °C
Symbol Parameter FQP12N60C FQPF12N60C Unit
RθJC Thermal Resistance, Junction-to-Case 0.56 2.43 °C/W
RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TO-220
FQP S er ies
GS
D
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FQP12N60C / FQPF12N60C Rev. B1
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 12A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FQP12N60C FQP12N60C TO-220 - - 50
FQPF12N60C FQPF12N60C TO-220F - - 50
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = 250µA, Referenced to 25°C--0.5--V/°C
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
--
--
--
--
1
10
µA
µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA2.0--4.0V
RDS(on) Static Drain-Source
On-Resistance VGS = 10V, ID = 6A -- 0.53 0.65
gFS Forward Transconductance VDS = 40V, ID = 6A (Note 4) -- 13 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V,
f = 1.0MHz
-- 1760 2290 pF
Coss Output Capacitance -- 182 235 pF
Crss Reverse Transfer Capacitance -- 21 28 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300V, ID = 12A
RG = 25
(Note 4, 5)
-- 30 70 ns
trTurn-On Rise Time -- 85 180 ns
td(off) Turn-Off Delay Time -- 140 280 ns
tfTurn-Off Fall Time -- 90 190 ns
QgTotal Gate Charge VDS = 400V, ID = 12A
VGS = 10V
(Note 4, 5)
-- 48 63 nC
Qgs Gate-Source Charge -- 8.5 -- nC
Qgd Gate-Drain Charge -- 21 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 12 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 12A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 12A
dIF/dt =100A/µs (Note 4)
-- 420 -- ns
Qrr Reverse Recovery Charge -- 4.9 -- µC
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FQP12N60C / FQPF12N60C Rev. B1
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
100101
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250µ s Pulse Test
2. TC
= 25
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
10-1
100
101
150oC
25oC
-55oC
Not es :
1. VDS = 40V
2. 250µ s Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
0 5 10 15 20 25 30 35
0.5
1.0
1.5
VGS = 20V
VGS = 10V
Note : TJ = 25
RDS(ON) [],
Drain-Source On-Resistance
ID
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150
Not es :
1. VGS = 0V
2. 250µ s Pulse Test
25
IDR, Reverse Drain Current [A]
V
SD, Source-Drain voltage [V]
10-1 100101
0
500
1000
1500
2000
2500
3000
3500
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Not es ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
C
iss
Capacitance [pF]
V
DS, Drain-Source Voltage [V]
0 1020304050
0
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
Note : ID
= 12A
VGS, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
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FQP12N60C / FQPF12N60C Rev. B1
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Volt age Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP12N60C for FQPF12N60 C
Figure 10. Maximum Drain Current
vs. Case Temperature
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
1. VGS = 0 V
2. ID
= 250 µ A
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. VGS = 10 V
2. ID
= 6.0 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102103
10-2
10-1
100
101
102
100 ms
10 µs
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R DS(on)
Notes :
1. TC
= 25 o
C
2. TJ = 150 o
C
3. Single Pulse
ID, Drain Current [A]
V
DS, Drain-Source Voltage [V] 100101102103
10-2
10-1
100
101
102
100 ms
10 µs
DC
10 ms
1 ms
100 µs
Operation i n This Area
is Limited by R DS(on)
Notes :
1. TC
= 25 o
C
2. TJ
= 150 o
C
3. Single Pulse
ID, Drain Current [A]
V
DS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
2
4
6
8
10
12
14
ID, Drain Current [A]
TC
, Case Temperature [ ]
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FQP12N60C / FQPF12N60C Rev. B1
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP12N60C
Figure 11-2. Transient The rmal Response Curve for FQPF12N60C
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
Notes :
1. Z θJC(t) = 0.56 /W M ax.
2. D uty Factor, D = t1/t2
3. T JM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t1
PDM
t2
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
N otes :
1. ZθJC(t) = 2.43 /W M ax.
2. D uty Facto r, D =t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t1
PDM
t2
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FQP12N60C / FQPF12N60C Rev. B1
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FQP12N60C / FQPF12N60C Rev. B1
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
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FQP12N60C / FQPF12N60C Rev. B1
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Mechanical Dimensions
Dimensions in Millimeters
TO - 220
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FQP12N60C / FQPF12N60C Rev. B1
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.1
0
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.2
0
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
Dimensions in Millimeters
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FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
FQP12N60C / FQPF12N60C Rev. B1
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Definition of Terms
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CROSSVOLT
CTL™
Current Transfer Logic™
EcoSPARK®
Fairchild®
Fairchild Semiconductor®
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IntelliMAX™
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®
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RapidConfigure™
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SuperSOT™-3
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®
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Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary First Production
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
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