QFET (R) FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description * * * * * * * These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 12A, 600V, RDS(on) = 0.65 @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant D G G DS TO-220 FQP Series TO-220F GD S FQPF Series S Absolute Maximum Ratings Symbol Parameter FQP12N60C VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR FQPF12N60C 600 (Note 1) Unit V 12 7.4 12* 7.4* A A 48 48* A 30 V Single Pulsed Avalanche Energy (Note 2) 870 mJ Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25C) - Derate above 25C 225 1.78 TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds 51 0.41 W W/C -55 to +150 C 300 C *Drain current limited by maximum junction temperature Thermal Characteristics FQP12N60C FQPF12N60C Unit RJC Symbol Thermal Resistance, Junction-to-Case Parameter 0.56 2.43 C/W RJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W (c)2007 Fairchild Semiconductor Corporation 1 FQP12N60C / FQPF12N60C Rev. B1 http://store.iiic.cc/ www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET September 2007 Device Marking Device Package Reel Size Tape Width Quantity FQP12N60C FQP12N60C TO-220 - - 50 FQPF12N60C FQPF12N60C TO-220F - - 50 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A, TJ = 25C 600 -- -- V BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25C -- 0.5 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125C --- --- 1 10 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 2.0 -- 4.0 V -- 0.53 0.65 -- 13 -- S -- 1760 2290 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 6A gFS Forward Transconductance VDS = 40V, ID = 6A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 182 235 pF -- 21 28 pF -- 30 70 ns -- 85 180 ns -- 140 280 ns -- 90 190 ns -- 48 63 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300V, ID = 12A RG = 25 (Note 4, 5) VDS = 400V, ID = 12A VGS = 10V (Note 4, 5) -- 8.5 -- nC -- 21 -- nC 12 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 12A -- -- 1.4 V trr Reverse Recovery Time 420 -- ns Reverse Recovery Charge VGS = 0V, IS = 12A dIF/dt =100A/s -- Qrr -- 4.9 -- C (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FQP12N60C / FQPF12N60C Rev. B1 2 http://store.iiic.cc/ www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Package Marking and Ordering Information FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 1 10 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : o 150 C o -55 C o 25 C 0 10 Notes : 1. 250s Pulse Test 2. TC = 25 0 10 Notes : 1. VDS = 40V 2. 250s Pulse Test -1 10 0 1 10 10 2 4 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage VGS = 10V 1.0 VGS = 20V 0.5 6 VGS, Gate-Source Voltage [V] 1 10 0 10 150 Notes : 1. VGS = 0V 2. 250s Pulse Test 25 Note : TJ = 25 -1 0 5 10 15 20 25 30 10 35 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics 3500 VGS, Gate-Source Voltage [V] Capacitance [pF] Coss 1500 1000 1.4 VDS = 120V Ciss 2000 1.2 12 10 2500 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 0.8 VSD, Source-Drain voltage [V] Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 500 VDS = 300V VDS = 480V 8 6 4 2 Note : ID = 12A 0 -1 10 0 0 10 1 10 FQP12N60C / FQPF12N60C Rev. B1 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 http://store.iiic.cc/ www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 6.0 A 0.5 0.0 -100 200 100 10 s 1 ms 10 ms 1 100 ms DC 0 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 200 10 s 100 s 100 s 10 150 Operation in This Area is Limited by R DS(on) 10 ID, Drain Current [A] ID, Drain Current [A] 50 Figure 9-2. Maximum Safe Operating Area for FQPF12N60C 2 Operation in This Area is Limited by R DS(on) 2 0 o Figure 9-1. Maximum Safe Operating Area for FQP12N60C 10 -50 TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] 1 10 1 ms 10 ms 100 ms DC 0 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 -2 10 0 1 10 2 10 -2 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 14 ID, Drain Current [A] 12 10 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [] FQP12N60C / FQPF12N60C Rev. B1 4 http://store.iiic.cc/ www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP12N60C Z JC(t), Thermal Response 10 0 D = 0 .5 10 0 .2 -1 N o te s : 1 . Z J C (t) = 0 .5 6 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 0 .0 5 10 10 PDM 0 .0 2 0 .0 1 -2 t1 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Z JC(t), Thermal Response Figure 11-2. Transient Thermal Response Curve for FQPF12N60C 10 D = 0 .5 0 0 .2 N o te s : 1 . Z J C (t) = 2 .4 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 10 0 .0 5 -1 0 .0 2 PDM 0 .0 1 t1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQP12N60C / FQPF12N60C Rev. B1 5 http://store.iiic.cc/ www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQP12N60C / FQPF12N60C Rev. B1 6 http://store.iiic.cc/ www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQP12N60C / FQPF12N60C Rev. B1 7 http://store.iiic.cc/ www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Mechanical Dimensions TO - 220 Dimensions in Millimeters FQP12N60C / FQPF12N60C Rev. B1 8 http://store.iiic.cc/ www.fairchildsemi.com (Continued) 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters FQP12N60C / FQPF12N60C Rev. B1 9 http://store.iiic.cc/ www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 10 FQP12N60C / FQPF12N60C Rev. B1 http://store.iiic.cc/ www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET TRADEMARKS