Zener Diode
1N5931B-1N5946B
Page <1> 07/04/11 V1.1
Features:
••Lower profile package.
••Excellent clamping capability.
••Glass passivated junction.
••Vz-tolerance ±5%.
Applications:
Voltage stabilization.
Absolute Maximum Ratings Tj= 25°C
Parameter Test Conditions Symbol Value Unit
Power dissipation Tamb ≥ 50°C Pv3 W
Z-current IzPv/VzmA
Junction temperature Tj150 °C
Storage temperature range Tstg -55 to +175
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics Tj= 25°C
Parameter Test Conditions Symbol Maximum Unit
Forward voltage IF= 200mA VF1.5 V
Description VZnom1) IZT for rZjT rZjk at IZK IRat VRPart Number
V mA ΩΩΩΩmA µµAV
Zener Diode 5.6 66.9 < 2 < 250
1< 5
3 1N5919B
Zener Diode 6.2 60.5 < 200 4 1N5920B
Zener Diode 6.8 55.1 < 2.5 5.2 1N5921B
Zener Diode 10 37.5 < 4.5 < 500
0.25
8 1N5925B
Zener Diode 12 31.2 < 6.5 < 550
<1
9.1 1N5927B
Zener Diode 15 25 < 9 < 600 11.4 1N5929B
Zener Diode 18 20.8 < 12 < 650 13.7 1N5931B
Zener Diode 20 18.7 < 14 15.2 1N5932B
Zener Diode 24 15.6 < 19 < 700 18.2 1N5934B
Specification Table
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature (TL) at 30°C, 9.5mm (3/8 inches) from
the diode body.