BC817 ... BC818 BC817 ... BC818 IC = 800 mA hFE ~ 160/250/400 Tjmax = 150C SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren VCES = 30...50 V Ptot = 310 mW Version 2017-08-15 Typical Applications Signal processing, Switching, Amplification Commercial grade 1) +0.1 1.1 -0.2 2.9 0.1 3 1 1.30.1 Type Code Taped and reeled 1.90.1 2=E RoHS Pb Besonderheiten Universell anwendbar Drei Stromverstarkungsklassen Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) 2 1=B Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) EE WE 2.4 0.2 0.4 +0.1 -0.05 Typische Anwendungen Signalverarbeitung, Schalten, Verstarken Standardausfuhrung 1) EL V SOT-23 (TO-236) Mechanische Daten 1) 3000 / 7" Weight approx. 3=C Dimensions - Mae [mm] Gegurtet auf Rolle 0.01 g Gewicht ca. Case material UL 94V-0 Gehausematerial Solder & assembly conditions 260C/10s Lot- und Einbaubedingungen MSL = 1 Type Code BC817-16 = 6A or 6CR BC817-25 = 6B or 6CS BC817-40 = 6C or 6CT Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren BC818-16 = 6E or 6CR BC818-25 = 6F or 6CS BC818-40 = 6G or 6CT BC807, BC808 Maximum ratings 2) Grenzwerte 2) BC817 BC818 Collector-Emitter-volt. - Kollektor-Emitter-Spannung E-B short VCES 50 V 30 V Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 45 V 25 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 5V Ptot 310 mW 3) IC 800 mA ICM 1A - IEM 1A Peak Base current - Basis-Spitzenstrom IBM 200 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Power dissipation - Verlustleistung Collector current - Kollektorstrom DC Peak Collector current - Kollektor-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom 1 2 3 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25C, unless otherwise specified - TA = 25C, wenn nicht anders angegeben Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Lotpad je Anschluss (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC817 ... BC818 Characteristics Kennwerte Tj = 25C Min. Typ. Max. hFE 100 160 250 - - - 250 400 630 hFE 40 - - VCEsat - - 0.7 V VBEsat - - 1.3 V VBE - - 1.2 V ICB0 - - - - 100 nA 5 A IEB0 - - 100 nA fT - 100 MHz - CCBO - 12 pF - 1 DC current gain - Kollektor-Basis-Stromverhaltnis ) Group -16 Group -25 Group -40 VCE = 1 V, IC = 100 mA VCE = 1 V, IC = 500 mA 2 Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. ) IC = 500 mA, IB = 50 mA Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung ) 2 IC = 500 mA, IB = 50 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) VCE = 1 V, IC = 500 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 20 V, (E open) VCB = 20 V, Tj = 125C, (E open) Emitter-Base cutoff current - Emitter-Basis-Reststrom VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient Warmewiderstand Sperrschicht - Umgebung RthA < 420 K/W 2) 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] 1 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp.1) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 2 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG