SM15T Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors Breakdown Voltage 6.8 to 220V Peak Pulse Power 1500W DO-214AB (SMC J-Bend) Cathode Band Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.185 MAX. (4.69 MAX.) 0.280 (7.11) 0.260 (6.60) 0.126 MIN. (3.20 MIN.) 0.012 (0.305) 0.006 (0.152) 0.060 MIN. (1.52 MIN.) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) 0.008 (0.203) Max. Dimensions in inches and (millimeters) 0.320 REF Mechanical Data Features Case: JEDEC DO-214AB (SMC) molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation Standard Packaging: 12mm tape (EIA STD RS-481) Weight: 0.003 oz., 0.093 g Packaging Codes - Options (Antistatic): 51 - 1K per Bulk box, 10K/carton 57 - 850 per 7" plastic Reel (16mm tape), 8.5K/carton 9A - 3.5K per 13" plastic Reel (16mm tape), 35K/carton * Low profile package with built-in strain relief for surface mounted applications * Glass passivated junction * Low inductance * Excellent clamping capability * 1500W peak pulse power capability with a 10/1000s waveform, repetition rate (duty cycle): 0.01% * Fast response time: theoretically (with no parisitic inductance) less than 1ps from 0 Volts to V(BR) for undirectional and 5ns for bidirectional types * High temperature soldering: 250C/10 seconds at terminals * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. SM15T10CA). Electrical characteristics apply in both directions. Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Peak pulse power dissipation with a 10/1000s waveform(1)(2) (Fig. 1) Peak pulse current with a 10/1000s waveform(1) (Fig. 3) Power dissipation on infinite heatsink, TA = 50C Peak forward surge current 10ms single half sine-wave uni-directional only (2) Typical thermal resistance junction to ambient air (3) Typical thermal resistance junction to leads Operating junction and storage temperature range Symbol Value Unit PPPM Minimum 1500 W IPPM PM(AV) See Next Table 6.5 A W IFSM 200 A RJA RJL TJ, TSTG 75 15 -65 to +150 C/W C/W C Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25C per Fig. 2 (2) Mounted on 0.31 x 0.31" (8.0 x 8.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout Document Number 88380 09-Feb-04 www.vishay.com 1 SM15T Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T =25C unless otherwise noted) A Test Standoff Leakage Voltage Current(3 Breakdown Voltage Current (2) ) VBR @ IT (V) IT VRM (V) Min Max (mA) IRM @VR Type(1) Device Marking Code Uni Bi SM15T6V8A GDE7 GDE7 5.80 SM15T7V5A GDK7 BDK7 SM15T10A GDT7 BDT7 SM15T12A GDX7 SM15T15A 10 Clamping Voltage VC @ IPP (10/1000s) (V) (A) Clamping Voltage VC @ IPP (8/20s) (V) (A) T Max 10-4/C 1000 6.45 7.14 10.5 143 13.4 746 5.7 6.40 500 7.13 7.88 8.55 10.0 9.50 10.5 10 11.3 132 14.5 690 6.1 1.0 14.5 103 18.6 538 7.3 BDX7 10.2 5.0 11.4 12.6 1.0 16.7 90.0 21.7 461 7.8 GEG7 GEG7 12.8 1.0 14.3 15.8 1.0 21.2 71.0 27.2 368 8.4 SM15T18A GEM7 BEM7 15.3 1.0 17.1 18.9 1.0 25.2 59.5 32.5 308 8.8 SM15T22A GET7 BET7 18.8 1.0 20.9 23.1 1.0 30.6 49.0 39.3 254 9.2 SM15T24A GEV7 GEV7 20.5 1.0 22.8 25.2 1.0 33.2 45.0 42.8 234 9.4 SM15T27A GEX7 BEX7 23.1 1.0 25.7 28.4 1.0 37.5 40.0 48.3 207 9.6 SM15T30A GFE7 BFE7 25.6 1.0 28.5 31.5 1.0 41.5 36.0 53.5 187 9.7 SM15T33A GFG7 GFG7 28.2 1.0 31.4 34.7 1.0 45.7 33.0 59.0 169 9.8 SM15T36A GFK7 BFK7 30.8 1.0 34.2 37.8 1.0 49.9 30.0 64.3 156 9.9 SM15T39A GFM7 BFM7 33.3 1.0 37.1 41.0 1.0 53.9 28.0 69.7 143 10.0 SM15T68A GGG7 GGG7 58.1 1.0 64.6 71.4 1.0 92.0 16.3 121 83 10.4 SM15T100A GGV7 GGV7 85.5 1.0 95.0 105 1.0 137 11.0 178 56 10.6 SM15T150A GHK7 GHK7 128 1.0 143 158 1.0 207 7.20 265 38 10.8 SM15T200A GHR7 GHR7 171 1.0 190 210 1.0 274 5.50 353 28 10.8 SM15T220A GHR8 GHR8 188 1.0 209 231 1.0 328 4.60 388 26 10.8 Notes: (1) For bi-directional devices add suffix "CA" instead of "A" (2) VBR measured after IT applied for 300s square wave pulse (3) For bipolar devices with VR=10 Volts or under, the IT limit is doubled Application Notes A 1500W (SMC) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also used to protect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough to limit the current within the peak pulse current (IPP) rating of this series. In an overstress condition, the failure mode is a short circuit. www.vishay.com 2 Document Number 88380 09-Feb-04 SM15T Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Pulse Derating Curve Fig. 1 - Peak Pulse Power Rating Curve 100 Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % PPPM -- Peak Pulse Power (kW) 100 10 1 0.31 x 0.31" (8.0 x 8.0mm) Copper Pad Areas 50 25 0 0.1 0.1s 1.0s 10s 100s 1.0ms 10ms 0 50 75 100 150 175 Fig. 3 - Pulse Waveform Fig. 4 - Typical Junction Capacitance Uni-Directional 20,000 TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM Half Value -- IPP 2 IPPM 50 10/1000sec. Waveform as defined by R.E.A. 1,000 VR, Measured at Stand-Off Voltage, VWM 100 Uni-Directional Bi-Directional TJ = 25C f = 1.0MHz Vsig = 50mVp-p td 1.0 0 3.0 2.0 200 Measured at Zero Bias 10,000 CJ -- Junction Capacitance (pF) Peak Value IPPM 100 125 TA -- Ambient Temperature (C) tr = 10sec. 0 10 4.0 1 10 100 400 VWM -- Reverse Stand-Off Voltage (V) t -- Time (ms) Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Use Only Fig. 5 - Typical Transient Thermal Impedance 100 200 Peak Forward Surge Current, Amperes Transient Thermal Impedance (C/W) 25 td -- Pulse Width (sec.) 150 IPPM -- Peak Pulse Current, % IRSM 75 100 10 1.0 0.1 0.001 8.3ms Single Half Sine-Wave (JEDEC Method) TJ = TJ max. 10 0.01 0.1 1 10 tp -- Pulse Duration (sec) Document Number 88380 09-Feb-04 100 1000 1 10 100 Number of Cycles at 60Hz www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1