1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra
small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect
up to two signal lines from the damage caused by ESD and other transient s.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Rev. 04 — 26 January 2010 Product data sheet
Unidirectional ESD protection of up to
two lines
ESD protection up to 30 kV
Max. peak pulse power: PPP =150W
at tp=8/20μs
IEC 61000-4-2; level 4 (ESD)
Low clamping voltage: VCL =20V
at IPP =15A
IEC 61000-4-5 (surge); IPP =15A
at tp=8/20μs
Low reverse leakage current: IRM <1nA
Computers and peripherals High-speed data lines
Audio and video equipment Parallel ports
Communication systems
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage
PESD3V3S2UQ - - 3.3 V
PESD5V0S2UQ - - 5 V
PESD12VS2UQ - - 12 V
PESD15VS2UQ - - 15 V
PESD24VS2UQ - - 24 V
Cddiode capacitance f = 1 MHz; VR=0V
PESD3V3S2UQ - 200 275 pF
PESD5V0S2UQ - 150 215 pF
PESD12VS2UQ - 38 100 pF
PESD15VS2UQ - 32 70 pF
PESD24VS2UQ - 23 50 pF
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 2 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
2. Pinning information
3. Ordering information
4. Marking
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode 1
2 cathode 2
3 common anode
12
3
006aaa15
4
12
3
Table 3. Ordering i nformation
Type number Package
Name Description Version
PESD3V3S2UQ - plastic surface-mounted package; 3 leads SOT663
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
Table 4. Marking codes
Type number Marking code
PESD3V3S2UQ E1
PESD5V0S2UQ E2
PESD12VS2UQ E3
PESD15VS2UQ E4
PESD24VS2UQ E5
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 3 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
5. Limiting values
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured across either pins 1 and 3 or pins 2 and 3.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured across either pins 1 and 3 or pins 2 and 3.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPP peak pulse power tp=8/20μs[1][2] -150W
IPP peak pulse current tp=8/20μs[1][2]
PESD3V3S2UQ - 15 A
PESD5V0S2UQ - 15 A
PESD12VS2UQ - 5 A
PESD15VS2UQ - 5 A
PESD24VS2UQ - 3 A
Per device
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Tstg storage temperature 65 +150 °C
Table 6. ESD maximum ratings
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
VESD electrostatic discharge
voltage IEC 61000-4-2
(contact discharge) [1][2]
PESD3V3S2UQ - 30 kV
PESD5V0S2UQ - 30 kV
PESD12VS2UQ - 30 kV
PESD15VS2UQ - 30 kV
PESD24VS2UQ - 23 kV
PESDxS2UQ series MIL-STD-883
(human body model) -10kV
Table 7. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (ai r); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 4 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
6. Characteristics
Fig 1. 8/20 μs pulse wavefo r m ac c or ding to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (μs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
et
100 % IPP; 8 μs
50 % IPP; 20 μs
001aaa63
1
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.7 ns to 1 ns
Table 8. Characteristics
Tj=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff
voltage
PESD3V3S2UQ - - 3.3 V
PESD5V0S2UQ - - 5 V
PESD12VS2UQ - - 12 V
PESD15VS2UQ - - 15 V
PESD24VS2UQ - - 24 V
IRM reverse leakage current
PESD3V3S2UQ VRWM = 3.3 V - 0.55 3 μA
PESD5V0S2UQ VRWM = 5 V - 50 300 nA
PESD12VS2UQ VRWM =12V - <1 30 nA
PESD15VS2UQ VRWM =15V - <1 50 nA
PESD24VS2UQ VRWM =24V - <1 50 nA
VBR breakdown voltage IR=5mA
PESD3V3S2UQ 5.2 5.6 6.0 V
PESD5V0S2UQ 6.4 6.8 7.2 V
PESD12VS2UQ 14.7 15.0 15.3 V
PESD15VS2UQ 17.6 18.0 18.4 V
PESD24VS2UQ 26.5 27.0 27.5 V
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 5 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured across either pins 1 and 3 or pins 2 and 3.
Cddiode capacitance f = 1 MHz; VR=0V
PESD3V3S2UQ - 200 275 pF
PESD5V0S2UQ - 150 215 pF
PESD12VS2UQ - 38 100 pF
PESD15VS2UQ - 32 70 pF
PESD24VS2UQ - 23 50 pF
VCL clamping voltage [1][2]
PESD3V3S2UQ IPP =1A - - 8 V
IPP =15A - - 20 V
PESD5V0S2UQ IPP =1A - - 9 V
IPP =15A - - 20 V
PESD12VS2UQ IPP =1A - - 19 V
IPP =5A - - 35 V
PESD15VS2UQ IPP =1A - - 23 V
IPP =5A - - 40 V
PESD24VS2UQ IPP =1A - - 36 V
IPP =3A - - 70 V
rdif differential resistance
PESD3V3S2UQ IR=5mA - - 40 Ω
PESD5V0S2UQ IR=5mA - - 15 Ω
PESD12VS2UQ IR=5mA - - 15 Ω
PESD15VS2UQ IR=1mA - - 225 Ω
PESD24VS2UQ IR=0.5mA - - 300 Ω
Table 8. Characteristics …continued
Tj=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 6 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Tamb =25°C
Fig 3. Peak pulse powe r di ss ipation as a function of
pulse duration; typical values Fig 4. Relative variation of peak pulse po we r a s a
function of junction temperature;
typical values
f=1MHz; T
amb =25°C
(1) PESD3V3S2UQ; VRWM =3.3V
(2) PESD5V0S2UQ; VRWM =5V
f=1MHz; T
amb =25°C
(1) PESD12VS2UQ; VRWM =12V
(2) PESD15VS2UQ; VRWM =15V
(3) PESD24VS2UQ; VRWM =24V
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Diode capacitance as a function of reverse
voltage; typical values
tp (μs)
110
3
102
10
001aaa726
103
102
104
PPP
(W)
10
T
j
(°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
P
PP
0
P
PP(25°C)
VR (V)
054231
001aaa727
120
160
80
200
240
Cd
(pF)
40
(1)
(2)
VR (V)
0252010 155
001aaa728
20
30
10
40
50
Cd
(pF)
0
(1)
(3)
(2)
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 7 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
(1) PESD3V3S2UQ; VRWM =3.3V
(2) PESD5V0S2UQ; VRWM =5V
IR is less than 15 nA at 150 °C for:
PESD12VS2UQ; VRWM =12V
PESD15VS2UQ; VRWM =15V
PESD24VS2UQ; VRWM =24V
Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values
001aaa729
1
10
10
1
T
j
(°C)
100 15010005050
I
RM
I
RM(25°C)
(1)
(2)
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 8 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Fig 8. ESD clamping test se tup and waveforms
001aaa73
1
450 Ω
50 Ω
Note 1: IEC61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
DUT: PESDxS2UQ
RG 223/U
50 Ω coax
RZ
CZ
ESD TESTER 4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
GND
GND
GND
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
unclamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
note 1
PESD24VS2UQ
PESD15VS2UQ
PESD12VS2UQ
PESD5V2S2UQ
PESD3V3S2UQ
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 9 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
7. Application information
The PESDxS2UQ series is designed for the protection of up to two unidirectional data
lines from the damage caused by ESD and surge pulses. The devices may be used on
lines where the signal polarities are below ground. The PESDxS2UQ series provides a
surge capability of up to 150 W (PPP) per line for an 8/20 μs waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as clos e to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should b e used whenever possible. For multilaye r PCBs, use ground
vias.
Fig 9. Typical application: ESD protection of data lines
001aaa73
0
PESDxS2UQ
line 1 to be protected
unidirectional protection
of two lines
bidirectional protection
of one line
line 2 to be protected
ground
PESDxS2UQ
line 1 to be protected
ground
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 10 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
Fig 10. Package outline PESDxS2UQ series (SOT663)
Dimensions in mm 02-05-21
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.33
0.23
0.5
12
3
0.6
0.5
0.3
0.1
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quan tity
4000 8000
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
SOT663 2 mm pitch, 8 mm tape and reel - -315
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
SOT663 4 mm pitch, 8 mm tape and reel -115 -
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 11 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESDXS2UQ_SER_4 20100126 Product data sheet - PESDXS2UQ_SER_N_3
Modifications: The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate .
Section 1.1 “General description: amended
Section 1.4 “Quick reference data: amended
Table 2 “Pinning: updated
Section 7 “Application information: amended
Figure 10: superseded by mini mized package outline drawing
Section 9 “Packing information: added
Section 11 “Legal information: updated
PESDXS2UQ_SER_N_3 20080911 Product data sheet - PESDXS2UQ_SERIES_2
PESDXS2UQ_SERIES_2 20040427 Product specification - PESDXS2UQ_SERIES_1
PESDXS2UQ_SERIES_1 20031215 Product specification - -
PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 12 of 13
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict wit h the short data sheet, th e
full data sheet shall pre va il.
11.3 Disclaimers
General — In formation in this document is beli eved to be accurate and
reliable. However, NXP Semiconductors d oes not give any repr esentatio ns or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, milit ary, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warrant y,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet D evelopment This document contain s data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 January 2010
Document identifier: PESDXS2UQ_SER_4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 9
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Packing information . . . . . . . . . . . . . . . . . . . . 10
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Contact information. . . . . . . . . . . . . . . . . . . . . 12
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13