NPN General Purpose Amplifier Collector 3 1 Base 2 Emitter Features: * * * * * For general AF applications Complementary PNP type available BC807 High collector current High current gain Low collector-emitter saturation voltage Pin Configuration: 1. Base 2. Emitter 3. Collector Applications: * * General purpose medium power amplifier Switching requiring collector currents up to 1.2mA Maximum Ratings Parameter Symbol Value Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 45 Emitter - Base Voltage Vebo 5 Collector Current Continuous IC 500 mA Collector Dissipation PC 300 mW Tj, Tstg -65 to +150 C Junction and Storage Temperature Unit V www.element14.com www.farnell.com www.newark.com Page <1> 05/04/13 V1.0 NPN General Purpose Amplifier Electrical Characteristics (Tamb = 25C unless otherwise noted) Parameter Symbol Test Conditions Min. Collector - Base Breakdown Voltage V(BR)CBO IC=10A, IE=0 50 Collector - Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 45 Emitter - Base Breakdown Voltage 5 Typ. Max. V V(BR)EBO IE=10A, IC=0 Collector Cut-off Current ICBO VCB=25V, IE=0 -0.1 Emitter Cut-off Current IEBO VCE=4V, IE=0 -0.1 DC Current Gain A VCE=1V, IC=-100mA 100 100 160 250 hFE VCE=1V, IC=-300mA 40 60 100 170 Collector - Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA 0.7 Base - Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA 1.2 Output Capacitance Cobo VCB=10V, f=1MHz 6 pF Transition Frequency fT VCE=5V, IC=50mA f=100MHz 170 MHz DC Current Gain BC817 BC817-16 BC817-25 BC817-40 Unit BC817 BC817-16 BC817-25 BC817-40 hFE 600 250 400 600 V Typical Characteristics: Tamb=25C unless otherwise specified Ratings & Characteristic Curves Total power dissipation Ptot = f(TS) Transition frequency fT = f(IC) VCE = 5V www.element14.com www.farnell.com www.newark.com Page <2> 05/04/13 V1.0 NPN General Purpose Amplifier Typical Characteristics: Tamb=25C unless otherwise specified Ratings & Characteristic Curves Permissible pulse load Ptotmax / PtotDC = f(tp) Collector cutoff current ICBO = f(TA) VCBO = 25V Base-emitter saturation voltage IC = f(VBEsat), hFE = 10 Collector-emitter saturation voltage IC = f(VCEsat), hFE = 10 www.element14.com www.farnell.com www.newark.com Page <3> 05/04/13 V1.0 NPN General Purpose Amplifier Package Outline DC current gain hFE = f(IC) VCE = 1V Plastic surface mounted package Dimensions Min. Max. A 1.8 2.2 B 1.15 1.35 C Soldering Footprint 1 Typical D 0.15 0.35 E 0.25 0.4 G 1.2 1.4 H 0.02 0.1 J 0.1 Typical K 2.1 2.3 Dimensions : Millimetres Part Number Table Description Part Number BC817 Dimensions : Millimetres Transistor, NPN, 0.5A, 45V, SOT23 BC817-16 BC817-25 BC817-40 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <4> 05/04/13 V1.0