semitronics semiconpuctors 4svete Semitronics Corp. silicon transistors silicon small signal transistors general purpose alloy Power . Dissipation hre @ Ic Vce (sat) @ Ie @ 25 Ta BYcso BVcE f Case Polarity (mW) {C) (volts) (vatts) (Min.) (Max.) (mA) {volts) (mA) hf (MHz) Style NOTE 1 NOTE 2 NOTE 3 NOTE 4 PNP 385 (A) 160 50 40 (0) 9.0 22 3.0 0.3 5.0 _ _ TO-5 PNP 385 (A) 200 50 40 (0) 9.0 22 3.0 Q.3 5.0 _ _ TO-5 PNP 385 (A) 160 50 35 (0) 18 44 3.0 0.5 10 _ _ TO-5 PNP 385 (A) 200 50 35 (0) 18 44 3.0 0.5 10 _ _ TO-5 PNP 385 (A) 160 50 30 (0) 36 88 3.0 0.6 15 _ _ TO0-5 PNP 385 (A) 200 50 30 (0) 36 88 3.0 0.6 15 _ _ T0-5 PNP 385 (A) 160 50 30 (0) _ _ PNP 250 (A) 200 40 25 (0) _ _ _ 0.5 5.0 12 (E) 0.8 (B) TO-18 PNP 250 (A) 200 40 25 (0) 9.0 _ 5.0 5.0 24 (EB) 0.8 (B) T0-18 PNP 250 (A) 200 50 40 (0) _ _ 0.5 5.0 10 (E} 0.8 (B) TO-18 PNP 250 (A) 200 50 40 (0) 0.5 5.0 20() 0.8 .(B) TO-18 PNP 250 (A) 200 70 60 (0) _ _ _ 0.5 5.0 8 (EB) 0.8 (B) TO-18 PNP 250 (A) 200 70 60 (0) 5.0 18 (E) 0.8 (B) 79-18 PNP 250 (A) 160 50 40 (0) 22 _ 0.3 5.0 _ _ T0-18 PNP 250 (A) 1 50 35 (0) 18 44 0.5 5.0 _ _ 10-18 250 (A) 160 50 30 (0) 36 88 0.6 5.0 = _ T0-18 250 (A) 175 40 35 (0) _ _ _ 0.3 5.0 9.0 (E) 1.0 (B) T0-18 250 (A) 175 40 35 (0) _ _ _ 0.3 5.0 18 (E) 2.0 (B} TO-18 250 (A) 175 40 35 (0) _ _ _ 0.3 5.0 36 (E} 2.0 (B) TO-18 250 (A) 175 18 15 (U) _ _ _ - _ 9.0 (E) 1.0 {(B) T0-5 250 (A) 175 40 35 (U) _ _ _ _ _ 9.0 (E) 1.0 (B) TO-5 250 (A) 175 40 35 (U) _ _ _ _ _ 18 (EB) 2.0 (B) TO-5 250 (A) 175 18 15 (U) _ _ _ _ _ 18 - (E) 4.0 (B) T0-5 250 (A) 175 12 10 (U) = _ _ ~ 9.0 (E) 7.2 (Tt) 10-5 150 (A) 140 25 25 (U} _ _ _ _ _ 15 (E) 8.0 (M) TQ-5 150 (A) 140 25 25 (U) 25 15 15 (6) 8.0 (M) T0-5 150 (A) 140 10 10 (U) 15 _ 15 0.15 5.0 7.2 (1) T0-5 250 I 175 x 25 (0) 18 _ .0 _ _ _ 5.0 (B) TO-5 250 (A) 175 30 25 (0) _ _ _ 0.5 _ 2.0 (B) TO-5 250 (A) 175 30 25 (0) _ _ _ _ 18 () 5.0 (B) TO-5 250 (A) 175 30 25 (QO) _ _ _ _ 9.0 (E) 2.0 (B) TO-5 250 (A) 175 40 40 (0) _ _ _ _ 6.0 (E) T0-5 (A) 160 15 15 (0) _ _ _ 0.2 10 14 (E) _ TO-5 400 (A) 160 1$ 15 (0) _ _ _ 0.2 10 28 (E) _ T0-5 400 (A) 160 35 35 (0) = = 0.2 10 14 () _ T0-5 400 i] 160 35 35 (0) _ _ _ 0.2 10 28 (E) _ TO-5 400 (A 160 60 60 (0) _ _ _ 0.2 10 14 (E) TO-5 400 (A) 160 60 60 (0) _ _ _ 0.2 10 28 (E) TO-5 400 (A) 160 110 110 (0) ~ _ _ 0.2 10 14 (BE T0-5 1000 (A) 160 15 15 (0) _ _ _ 0.2 10 14 () TO-1 1000 (A) 160 15 15 (Q) _ _ _ 0.2 10 28 (E} _ TO-1 1000 (A) 160 35 35 (0) - _ _ 0.2 10 14 (6) TO-1 1000 (A) 160 35 35 (0) _ _ _- 0.2 10 28 (EB) _ 10-1 4A) 160 60 60 (0) _ _ _ 0.2 10 14 (E) _ TO-1 1000 (A) 160 60 60 (0) = = _ 0.2 10 28__(E) = 10-1 1000 (A) 160 110 110 (Q) => _ 0.2 10 14 (E) _ TO-1 250 (A) 160 100 (0) 9 25 1.0 0.3 5.0 100* (B) T0-5 100 (A) 140 6 6 (0) 12 5.0 0.1 5.0 25 (E) 16 (7) T0-5 400 (A) 200 50 50 (0) _ _ _ 0.25 5.0 9.0 (E) 0.5 (B) TO-5 400 (A) 200 60 50 (0) _ _ _ 0.25 5.0 9.0 (E) 1.0 (B) TO-5 400 (A) 200 0 35 (0) _ _ _ 0.25 5.0 18 = (E) 1.0 (B) TO-5 400 (A) 200 50 (0) _ - _- 0.25 5.0 30 (E) 1.0 (B) T0-5 400 (A) 50 15 (0) _ 0.25 5.0 50 (E) 1.0 (B) 10-5 250 (A) 175 40 35 (U) _ - _ _ _ 36 (EB) 2.0 (B) 10-5 250 (A) 175 60 60 (U) _ _ _ _ _ 12 (EB) 1.0 (B) TO-5 250 (A) 175 60 60 (U) _ _ _ _ _ 18 (E) 2.0 (B) TO-5 250 (A) 175 60 60 (U) _ _ _ 36 (E) 1.0 (8) TO-5 250 (A) 175 100 100 (U) _ _ _ _ _ 12 (E) 1.0 (B) TO-5 250 (A) 175 100 100 (U) _ _ _ _ _ 30. (BE) 1.0 (B) T0-5 250 (A) 160 50 20 (0) 9.0 40 1.0 0.3 5.0 100* (B) TO-5 250 (A) 160 25 25 (U) 10 25 -100 _ _ _ _ TO-5 250 (A) 160 100 80 (0) 20 45 1.0 0.3 5.0 _ 100* (B) TO-5 250 (A) 160 125 100 (0) 10 22 1.0 0.3 5.0 100* (B) TO-5 250 (A) 160 125 100 (0) 20 45 1.0 0.3 5.0 _ 100* (B) 70-5 100 (A) 175 6 6 (0) 30 020 _ 10_(7) 70-5 100 (A) 175 6 6 (0) 30 _ 020 _ _ 10 (T) TO-18 100 (A) 160 6 6 (0) 15 _ 005 _ _ 50 (E) 8.0 (B) T0-5 100 (A) 160 6 6 (0) 15 005 _ _ 50 (E) 8.0 (B) T0-18 250 (A} 75 20 8 (0) 30 _ 5.0 0.1 5.0 _ _ T0-5 25 (A) 175 25 8 (0) 20 = .25 _ _ 2.0 (T) TO-5 250 (A) 175 30 30 (0) 25 1.0 _ 2.0 (T) TO-5 250 (A) 175 50 50 (0) 15 1.0 _ 2.0 (T) T0-5 250 (A) 175 50 0 (0) 25 _ 1.0 _ _ _ 2.0 {T) TO-5 NOTES: NOTE 1 (for P Dissipation @ 25C) NOTE 3 (for hf) The following notes define test conditions or parameters. or eiiel ssipation or : They are inserted directly below their appropriate column A = Ambient Temperature E = Common Emitter headings throughout the transistor section. C = Case Temperature B = Common Base # = Junction Temperature =Common Collector NOTE 2(for BVe._) NOTE 4 (for f) O = Base Open B = Common Base Cutoff g = Bbec ified Resistance E = rommon Emitter Cutoff = Base Shor = Minimum Frequency of 24 || V = Used only when Voltage Bias Oscillations = Hob Fekb OO 0 0 4 40 de is applied T = Current Gain-Bandwidth X = Base-Emitter Back Biased Product