MMBT2222AT — NPN Epit axial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 1
September 2008
MMBT2222AT
NPN Epitaxial Silicon Transistor
Features
General purpose amplifier transistor.
Ultra-Small Surface Mount Package for all types.
General purpose switching & amplification application
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* Ta=25°C unless otherwise noted
* Minimum land pad.
Electrical Characteristics* Ta=25°C unless otherwise note d
* DC Item are tested by Pulse Test : Pulse Width300us, Duty Cycle2%
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 600 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 ~ 150 °C
Symbol Parameter Max Unit
PCCollector Power Dissipation, by RθJA 250 mW
RθJA Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Condition Min. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 75 V
BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 40 V
BVEBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6 V
ICEX Collector Cut-off Current VCE = 60V, VEB(OFF) = 3V 10 nA
hFE DC Current Gain VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 150mA
35
50
75
100
VCE (sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.3
1.0 V
V
VBE (sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.6 1.2
2.0 V
V
fTCurrent Gain Bandwidth Product VCE = 20V, IC = 20mA, f = 100MHz 300 MHz
Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8pF
Cib Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 30 pF
tdDelay Time VCC = 30V, IC = 150mA
IB1 =- IB2 = 15mA 10 ns
trRise Time 25 ns
tsStorage Time 225 ns
tfFall Time 60 ns
SOT-523F
Marking : A02
B
C
E
MMBT2222AT — NPN Epit axial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 2
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation voltage
Figure 5. Collector- Base Leakage Current Figure 6. Collector-Base Capapcitance
1 10 100 1000
10
100
Vce=10V
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Current Gain
Collector Current, [mA] 1 10 100 1000
100
Vce=5V
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Current Gain
Collector Current, [mA]
10 100
10
100
1000 Ic=10*Ib
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Collector-Emitter Voltage,[mV]
Collector Cu rren t, [mA ] 10 100
100
1000
Ic=10*Ib
TJ=-25 oC
TJ=25 oC
TJ=75 oC
TJ=125 oC
Base- Emitter V oltage,[mV ]
Collector Current, [mA]
10 20 30 40 50 60 70
1
10
100
1000
TJ=-25 oC
TJ=25 oC
TJ=75 oC
TJ=125 oC
Base-Collector Leakage Current,[nA]
Base-Collector Revere Voltage, [V]
0510
5
8
10
13
15
f=1mhz
Base- Collector Juntion Capacitance, Cob[pF]
Base- Collector Reverse Voltage, Vcb[V]
MMBT2222AT — NPN Epit axial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 3
Typical Performance Characteristics
Figure 7. Power Derating
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Power Dissipation, [mW]
Ambient Tempe rature, Ta[oC]
MMBT2222AT — NPN Epit axial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 4
Package Dimensions
SOT-523F
Case : SOT-523F
Case Material(Molded Plastic): KTMC1060SC
UL Flammability classification rating : “V0”
Moisture Sensitivity level per JESD22-A1113B : MSL 1
Lead terminals solderable per MIL-STD7502026 /JESD22A121
Lead Free Plating : Pure Tin(Mat te)
Dimensions in Millimeters
MMBT2222AT NPN Epit axial Silicon TransistorMMBT2222AT
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 5
Rev. I31
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Definition of Terms
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Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary dat a will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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the right to make changes at any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semic onductor. The datasheet is printed for reference infor-
mation only.