AA032P1-00 - Alpha Industries, Inc.

Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com 1

Specifications subject to change without notice. 12/99A

30–36 GHz GaAs MMIC

Power Amplifier

Features

■Single Gate and Drain Biases

■25 dBm Typical P1 dB Output Power

at 31 GHz

■11 dB Typical Small Signal Gain

■0.25 µm Ti/Pd/Au Gates

■100% On-Wafer RF and DC Testing

■100% Visual Inspection to MIL-STD-883

MT 2010

Chip Outline

AA032P1-00

Description

Alpha’s two-stage reactively-matched Ka band GaAs

MMIC power amplifier has a typical P1 dB of 25 dBm with

10 dB associated gain and 15% power added efficiency

at 31 GHz. The chip uses Alpha’s proven

0.25 µm MESFET technology, and is based upon MBE

layers and electron beam lithography for the highest

uniformity and repeatability. The FETs employ surface

passivation to ensure a rugged, reliable part with

through-substrate via holes and gold-based backside

metallization to facilitate solder or epoxy die attach

processes. Single gate and drain bias pads cover both

stages, with the added convenience that the chip can be

wire bonded from either side for either bias. All chips are

screened for gain, output power, efficiency and S-

parameters prior to shipment for guaranteed performance.

A broad range of applications exist in both the military and

commercial areas where high power and gain are

required.

Parameter Condition Symbol Min. Typ.2Max. Unit

Drain Current (at Saturation) IDS 400 450 mA

Small Signal Gain F = 30–31, 34–36 GHz G 8 11 dB

Input Return Loss F = 30–31, 34–36 GHz RLI-7 -6 dB

Output Return Loss F = 30–31, 34–36 GHz RLO-8 -6 dB

Output Power at 1 dB Gain Compression F = 31 GHz P1 dB 24 25 dBm

Saturated Output Power F = 31 GHz PSAT 25 27 dBm

Gain at Saturation F = 31 GHz GSAT 8dB

Thermal Resistance1ΘJC 42 °C/W

Electrical Specifications at 25°C (VDS = 6 V, VGS = -1 V)

1. Calculated value based on measurement of discrete FET.

2. Typical represents the median parameter value across the specified

frequency range for the median chip.

1.937

1.099

0.597

1.099

0.597

0.000

2.166

0.120

1.143 1.143

2.285

1.929

2.415

0.107

2.179

0.000

Dimensions indicated in mm.

All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.

Chip thickness = 0.1 mm.

Characteristic Value

Operating Temperature (TC) -55°C to +90°C

Storage Temperature (TST) -65°C to +150°C

Bias Voltage (VD)7 V

Power In (PIN) 22 dBm

Junction Temperature (TJ) 175°C

Absolute Maximum Ratings

30–36 GHz GaAs MMIC Power Amplifier AA032P1-00

2Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com

Specifications subject to change without notice. 12/99A

Typical Small Signal Performance

S-Parameters (VDS = 6 V)

-5

-15

-10

-20

-25

-35

-30

26 27 28 29 31 32 33 35 36 3730 34 38

Frequency (GHz)

S-Parameter (dB)

S21

S22

S11

S12

POUT (dBm)

7 8 9 10 11 12 14 15 17 18 20 2113

PIN (dBm)

Typical Output Power Compression

16 19 22

POUT 28 GHz

POUT 31 GHz

POUT 35 GHz

Typical Performance Data

Bias Arrangement

Detail A

SEE

DETAIL A

RF IN RF OUT

VGVD

VG = -1 V VDS = 6 V

.01 µF 50 pF .01 µF50 pF

RF OUTRF IN

Circuit Schematic

The AA032P1-00 can be biased from either or both sides for both gate and

drain biases.

For biasing on, adjust VGS from zero to approximately -1 V. Adjust VDS from

zero to the desired value (4 V–6 V recommended). Adjust VGS to achieve the

desired IDS (400 mA recommended). For biasing off, reverse the biasing on

procedure.