IHW20T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop(R) and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode * * * * * * * * C Short circuit withstand time - 10s Designed for : - Soft Switching Applications - Induction Heating Trenchstop(R) and Fieldstop technology for 1200 V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) TM Very soft, fast recovery anti-parallel EmCon HE diode Low EMI 1 Qualified according to JEDEC for target applications Application specific optimisation of inverse diode Pb-free lead plating; RoHS compliant Type IHW20T120 G E PG-TO-247-3-21 VCE IC VCE(sat),Tj=25C Tj,max Marking Package 1200V 20A 1.7V 150C H20T120 PG-TO-247-3-21 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25C 40 TC = 100C 20 Pulsed collector current, tp limited by Tjmax ICpul s 60 Turn off safe operating area VCE 1200V, Tj 150C - 60 Diode forward current IF TC = 25C 23 TC = 100C 13 Diode pulsed current, tp limited by Tjmax IFpul s Diode surge non repetitive current, tp limited by Tjmax IFSM 36 A TC = 25C, tp = 10ms, sine halfwave 50 TC = 25C, tp 2.5s, sine halfwave 130 TC = 100C, tp 2.5s, sine halfwave 120 VGE 20 V tSC 10 s Power dissipation, TC = 25C Ptot 178 W Operating junction temperature Tj -40...+150 C Storage temperature Tstg -55...+150 C Gate-emitter voltage 2) Short circuit withstand time VGE = 15V, VCC 1200V, Tj 150C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors 2 http://store.iiic.cc/ - 260 Rev. 2.2 May 06 IHW20T120 Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit K/W Characteristic IGBT thermal resistance, junction - case RthJC 0.7 Diode thermal resistance, junction - case RthJCD 1.3 Thermal resistance, junction - ambient RthJA 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j =2 5 C - 1.7 2.2 T j =1 2 5 C - 2.0 - T j =1 5 0 C - 2.2 - T j =2 5 C - 1.7 2.2 T j =1 2 5 C - 1.7 - T j =1 5 0 C - 1.7 - 5.0 5.8 6.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A Collector-emitter saturation voltage VCE(sat) VF Diode forward voltage V V G E = 15 V , I C = 20 A V G E = 0V , I F = 9 A Gate-emitter threshold voltage VGE(th) I C = 30 0 A , V C E = V G E Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V T j =2 5 C T j =1 5 0 C - - 250 2500 A Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 600 nA Transconductance gfs V C E = 20 V , I C = 20 A - 13 - S Input capacitance Ciss V C E = 25 V , - 1460 - pF Output capacitance Coss V G E = 0V , - 78 - Reverse transfer capacitance Crss f= 1 MH z - 65 - Gate charge QGate V C C = 96 0 V, I C =2 0 A V G E = 15 V - 120 - nC Internal emitter inductance LE - 13 - nH - 120 - A Dynamic Characteristic measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C 10 s V C C = 6 0 0 V, T j = 25 C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 3 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unit min. typ. max. - 50 - - 30 - - 560 - - 70 - - 1.8 - - 1.5 - - 3.3 - - 140 - - 950 nC - 13.3 A IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 C , V C C = 60 0 V, I C = 2 0 A, V G E = 0/ 15 V , R G = 28 , Energy losses include "tail" and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm T j =2 5 C , V R = 8 00 V , I F = 9 A, d i F / d t =7 5 0 A/ s ns Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value Unit min. typ. max. - 50 - - 32 - - 660 - - 130 - - 2.6 - - 2.6 - - 5.2 - - 210 - ns - 1600 - nC - 16.5 - A IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 5 0 C V C C = 60 0 V, I C = 20 A , V G E = 0/ 15 V , R G = 2 8 Energy losses include "tail" and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Power Semiconductors T j =1 5 0 C V R = 8 00 V , I F = 1 8 A, d i F / d t =7 5 0 A/ s 4 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series 70A t p =2s 60A T C =80C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 50A 40A T C =110C 30A Ic 20A Ic 10A 10A 10s 50s 200s 1A 500s 2ms DC 0A 10H z 100H z 1kH z 10kH z 0,1A 1V 100kH z f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 28) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V) 180W 40A 160W IC, COLLECTOR CURRENT Ptot, DISSIPATED POWER 140W 120W 100W 80W 60W 40W 30A 20A 10A 20W 0W 25C 50C 75C 100C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) Power Semiconductors 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) 5 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series 60A 60A 50A 50A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT V G E =17V 15V 40A 13V 11V 30A 9V 7V 20A 10A 0V 1V 2V 3V 4V 5V 13V 11V 30A 9V 7V 20A 0A 6V 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C) 3,5V VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 60A 50A IC, COLLECTOR CURRENT 15V 40A 10A 0A 40A 30A 20A T J = 1 5 0 C 10A 0A V G E =17V 2 5 C 0V 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors IC =40A 3,0V 2,5V IC =20A 2,0V IC =10A 1,5V 1,0V IC =5A 0,5V 0,0V -50C 0C 50C 100C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series t d(off) 1s td(off) t, SWITCHING TIMES t, SWITCHING TIMES 1000ns tf 100ns t d(on) tf 100ns td(on) tr tr 10ns 0A 10A 10ns 10 20A t, SWITCHING TIMES t d(off) tf 100ns t d(on) tr 10ns 0C 50C 100C 150 TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=20A, RG=35, Dynamic test circuit in Figure E) Power Semiconductors 60 85 110 RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=20A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=35, Dynamic test circuit in Figure E) 35 7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 7 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series 7 mJ 8 ,0m J 6 ,0m J E ts * 4 ,0m J E off 2 ,0m J E on * 5 mJ 4 mJ 10A 1 5A 20A 25A 3 0A 35A E on* 2 mJ 1 mJ 40 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=35, Dynamic test circuit in Figure E) 55 80 *) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES d u e to d io d e re c o v e ry 5m J E, SWITCHING ENERGY LOSSES 30 5m J *) E on a n d E ts in c lu d e lo s s e s 4m J 3m J E * ts 1m J 5 RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=20A, Dynamic test circuit in Figure E) 6m J 2m J E off 3 mJ 0 mJ 0 ,0m J 5A E ts* due to diode recovery 6 mJ due to diode recov ery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on and E ts include losses *) E on and E ts include los ses E o ff E on * 4m J 3m J E ts * 2m J E off 1m J E on * 0m J 5 0 C 1 0 0 C 1 5 0 C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=20A, RG=35, Dynamic test circuit in Figure E) Power Semiconductors 0m J 400V 500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=20A, RG=35, Dynamic test circuit in Figure E) 8 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series C iss 1 5V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 1nF 960V 1 0V C oss 100pF C rss 5V 0V 0nC 5 0nC 100nC 10pF 150n C QGE, GATE CHARGE Figure 17. Typical gate charge (IC=20 A) 0V 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT tSC, SHORT CIRCUIT WITHSTAND TIME 200A 15s 10s 5s 0s 12V 14V 150A 125A 100A 75A 50A 25A 0A 12V 16V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C) Power Semiconductors 175A 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C) 9 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series 0 D=0.5 0.2 -1 10 K/W R,(K/W) 0.3841 0.2088 0.1079 0.1 0.05 R1 , (s) 6.54*10-2 3.12*10-3 2.26*10-4 R2 0.02 0.01 C 1 = 1 /R 1 C 2 = 2 /R 2 single pulse ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE 0 10 K/W 10 K/W D=0.5 0.2 -1 10 K/W , (s) 5.53*10-2 7.07*10-3 8.85*10-4 8.48*10-5 R,(K/W) 0.2440 0.4622 0.4972 0.0946 0.1 0.05 R1 0.02 R2 0.01 C 1 = 1 /R 1 single pulse C 2 = 2 /R 2 -2 10 K/W 10s 100s 1ms 10ms 100m s 10s tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) 300ns TJ=150C 0ns 200A/s TJ=25C 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) Power Semiconductors Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 400ns 100ns 1ms 10ms 100m s tP, PULSE WIDTH Figure 24. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T) 500ns 200ns 100s TJ=150C 2C 1C TJ=25C 0C 200A/s 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) 10 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series 25A TJ=25C 20A 15A 10A 5A 0A 200A/s 400A/s 600A/s TJ=25C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT TJ=150C -600A/s -500A/s TJ=150C -400A/s -300A/s -200A/s -100A/s -0A/s 200A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) TJ=25C 150C 2,0V VF, FORWARD VOLTAGE IF, FORWARD CURRENT 20A 10A IF=15A 1,5V 8A 5A 2,5A 1,0V 0,5V 0A 0V 1V 0,0V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors -50C 0C 50C 100C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature 11 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series PG-TO247-3-21 Power Semiconductors 12 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors 13 http://store.iiic.cc/ Rev. 2.2 May 06 IHW20T120 Soft Switching Series Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 11/6/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 http://store.iiic.cc/ Rev. 2.2 May 06