Document Number: 001-98525 Rev. *B Page 2 of 78
General Description
The S29GL-N family of devices are 3.0-Volt single-po wer F lash
memory manufactured using 110 nm MirrorBit technology. The
S29GL064N is a 64-Mb device organized as 4,194,304 words
or 8,388,608 bytes. The S29GL032N is a 32-Mb device
organized as 2,097,152 words or 4,194,304 bytes. Depending
on the model number, the devices have 16-bit wide data bus
only, or a 16-bit wide data bus that can also function as an 8-bit
wide data bus by using the BYTE# input. The device s can be
programmed either in the host system or in standard EPROM
programmers.
Access times as fast as 90 ns are available. Note that each
access time has a specific operating voltage range (VCC) as
specified in the Product Selector Guide and the Ordering
Information–S29GL032N, and Ordering Information–
S29GL064N. Package offerings include 48-pin TSOP, 56-pin
TSOP, 48-ball fine-pitch BGA and 64-ball Fortified BGA,
depending on model number. Each device has separate chip
enable (CE#), write enable (WE#) and output enable (OE#)
controls.
Each device requires only a single 3.0-Vo lt power supply for
both read and write functions. In addition to a VCC input, a
high-voltage accelerated program (ACC) feature provides
shorter programming times through increased voltage on the
WP#/ACC or ACC input. This feature i s intended to facilitate
factory throughput during system production, but may also be
used in the field if desired.
The device is entirely command set compatible with the JEDEC
single-power-supply Flash standard. Commands are written
to the device using standard microprocesso r write timing. Write
cycles also internally latch addresses and data needed for the
programming and erase operations.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data contents
of other sectors. The device is fully erased when shipped from
the factory.
The Advan ced Sector Protection features several levels of
sector protection, which can disable both the program and
erase operations in certain sectors. Persistent Sector
Protection is a method that replaces the previous 12-volt
controlled protection method. Password Sector Protection is a
highly sophisticated protection method that requires a
password before changes to certain sectors are permitted.
Device programming and erasure are initiated through
command sequences. Once a program or erase operation
begins, the host system need only poll the DQ7 (Data# Polling)
or DQ6 (toggle) status bits or monitor the Ready/Busy#
(RY/BY#) output to determine whether the operation is
complete. To facilitate programming, an Unlock Bypass mode
reduces command sequence ove rhead by requiring only two
write cycles to program data instead of four.
Hardware data protection measures include a low VCC
detector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any combination
of sectors of memory. This can be achieved in-system or via
programming equipment.
The Erase Suspend/Erase Resume feature allows the host
system to pause an erase operation in a given sector to read or
program any other sector and then complete the erase
operation. The Program Suspend/Program Resume feature
enables the host system to pause a program operation in a
given sector to read any other sector and then complete the
program operation.
The hardware RESET# pin terminates any operation in
progress and resets the device, after which it is then ready for a
new operation. The RESET# pin may be tied to the system
reset circuitry. A system reset would thus also reset the device,
enabling the host system to read boot-up firmware from the
Flash memory device.
The device reduces power consumpti on in the standby mode
when it detects specific voltage levels on CE# and RESET#, or
when addresses are stable for a specified period of time.
The Write Protect (WP#) feature protects the first or last sector
by asserting a logic low on the WP#/ACC pin or WP# pin,
depending on model number. The protected sector is still
protected even during accelerated programming.
The Secured Silicon Sector provides a 128-word/256-byte
area for code or data that can be permanently prot ected. Once
this sector is protected, no further changes within the sector can
occur.
Cypress MirrorBit flash technology combines years of Flash
memory manufacturing experience to produce the highest
levels of quality, reliability a nd cost effectiveness. The device
electrically erases all bits within a sector simultan eously via
hot-hole assisted erase. The data is programmed using hot
electron injection.