SMA6J5.0 thru 40A
Vishay Semiconductors
for merly General Semiconductor
Document Number 88389 www.vishay.com
07-May-02 1
New Product
Surface Mount TRANSZORB®T ransient Voltage Suppressors
Stand-off Voltage 5.0 to 40V
Peak Pulse Power 600W
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak pulse power dissipation with PPPM 600 W
a 10/1000µs wavefor m(1,2) (see fig. 1)
Peak pulse current with a 10/1000µs waveform(1) IPPM See Next Table A
Peak forward surge current 8.3ms single half sine-wave IFSM 70 A
uni-directional only(2)
Typical thermal resistance, junction to ambient(3) RθJA 110 °C/W
Typical thermal resistance, junction to lead RθJL 25 °C/W
Operating junction and storage temperature range TJ, TSTG – 55 to +150 °C
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52) 0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AC (SMA)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance, excellent clamping
capability
• 600W peak pulse power capability with a 10/1000µs
wavefor m, repetition rate (duty cycle): 0.01%
• Ver y fast response time
Mechanical Data
Case: JEDEC DO-214AC molded plastic over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity: The band denotes the cathode, which is
positive with respect to the anode under normal TVS
operation
Mounting Position: Any Weight: 0.002 oz., 0.064 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 20K/car ton
61 – 1.8K per 7" plastic Reel (12mm tape), 36K/car ton
5A – 7.5K per 13" plastic Reel (12mm tape), 75K/carton
0.094 MAX.
(2.38 MAX.)
0.220
(5.58) REF
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Mounting Pad Layout
SMA6J5.0 thru 40A
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88389
207-May-02
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF= 3.5V at IF= 25A (uni-directional only)
Device Breakdown Maximum Maximum Maximum
Device Type Marking Voltage Test Stand-off Reverse Leakage Peak Pulse Surge Clamping
Code V(BR) (V)(1) Current Voltage at VWM Current IPPM Voltage at IPPM
Min Max at IT(mA) VWM (V) ID (µA) (A)(2) VC(V)
SMA6J5.0 6AD 6.40 7.82 10 5.0 800 62.5 9.6
SMA6J5.0A 6AE 6.40 7.07 10 5.0 800 65.2 9.2
SMA6J6.0 6AF 6.67 8.15 10 6.0 800 52.6 11.4
SMA6J6.0A 6AG 6.67 7.37 10 6.0 800 58.3 10.3
SMA6J6.5 6AH 7.22 8.82 10 6.5 500 48.8 12.3
SMA6J6.5A 6AK –7.22 7.98 10 6.5 500 53.6 11.2
SMA6J7.0 6AL 7.78 9.51 10 7.0 200 45.1 13.3
SMA6J7.0A 6AM 7.78 8.60 10 7.0 200 50.0 12.0
SMA6J7.5 6AN 8.33 10.2 1.0 7.5 100 42.0 14.3
SMA6J7.5A 6AP 8.33 9.21 1.0 7.5 100 46.5 12.9
SMA6J8.0 6AQ 8.89 10.9 1.0 8.0 50 40.0 15.0
SMA6J8.0A 6AR 8.89 9.83 1.0 8.0 50 44.1 13.6
SMA6J8.5 6AS 9.44 11.5 1.0 8.5 10 37.7 15.9
SMA6J8.5A 6AT 9.44 10.4 1.0 8.5 10 41.7 14.4
SMA6J9.0 6AU 10.0 12.2 1.0 9.0 5.0 35.5 16.9
SMA6J9.0A 6AV 10.0 11.1 1.0 9.0 5.0 39.0 15.4
SMA6J10 6AW 11.1 13.6 1.0 10 1.0 31.9 18.8
SMA6J10A 6AX 11.1 12.3 1.0 10 1.0 35.3 17.0
SMA6J11 6AY 12.2 14.9 1.0 11 1.0 29.9 20.1
SMA6J11A 6AZ 12.2 13.5 1.0 11 1.0 33.0 18.2
SMA6J12 6BD 13.3 16.3 1.0 12 1.0 27.3 22.0
SMA6J12A 6BE 13.3 14.7 1.0 12 1.0 30.2 19.9
SMA6J13 6BF 14.4 17.6 1.0 13 1.0 25.2 23.8
SMA6J13A 6BG 14.4 15.9 1.0 13 1.0 27.9 21.5
SMA6J14 6BH 15.6 19.1 1.0 14 1.0 23.3 25.8
SMA6J14A 6BK 15.6 17.2 1.0 14 1.0 25.9 23.2
SMA6J15 6BL 16.7 20.4 1.0 15 1.0 22.3 26.9
SMA6J15A 6BM 16.7 18.5 1.0 15 1.0 24.6 24.4
SMA6J16 6BN 17.8 21.8 1.0 16 1.0 20.8 28.8
SMA6J16A 6BP 17.8 19.7 1.0 16 1.0 23.1 26.0
SMA6J17 6BQ 18.9 23.1 1.0 17 1.0 19.7 30.5
SMA6J17A 6BR 18.9 20.9 1.0 17 1.0 21.7 27.6
SMA6J18 6BS 20.0 24.4 1.0 18 1.0 18.6 32.2
SMA6J18A 6BT 20.0 22.1 1.0 18 1.0 20.5 29.2
SMA6J20 6BU 22.2 27.1 1.0 20 1.0 16.8 35.8
SMA6J20A 6BV 22.2 24.5 1.0 20 1.0 18.5 32.4
SMA6J22 6BW 24.4 29.8 1.0 22 1.0 15.2 39.4
SMA6J22A 6BX 24.4 26.9 1.0 22 1.0 16.9 35.5
SMA6J24 6BY 26.7 32.6 1.0 24 1.0 14.0 43.0
SMA6J24A 6BZ 26.7 29.5 1.0 24 1.0 15.4 38.9
SMA6J26 6CD 28.9 35.3 1.0 26 1.0 12.9 46.6
SMA6J26A 6CE 28.9 31.9 1.0 26 1.0 14.3 42.1
SMA6J28 6CF 31.1 38.0 1.0 28 1.0 12.0 50.0
SMA6J28A 6CG 31.1 34.4 1.0 28 1.0 13.2 45.4
SMA6J30 6CH 33.3 40.7 1.0 30 1.0 11.2 53.5
SMA6J30A 6CK 33.3 36.8 1.0 30 1.0 12.4 48.4
Notes: (1) V(BR) measured after ITapplied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig.2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
SMA6J5.0 thru 40A
Vishay Semiconductors
for merly General Semiconductor
Document Number 88389 www.vishay.com
07-May-02 3
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF= 3.5V at IF= 25A (uni-directional only)
Device Breakdown Maximum Maximum Maximum
Device Type Marking Voltage Test Stand-off Reverse Leakage Peak Pulse Surge Clamping
Code V(BR) (V)(1) Current Voltage at VWM Current IPPM Voltage at IPPM
Min Max at IT(mA) VWM (V) ID (µA) (A)(2) VC(V)
SMA6J33 6CL 36.7 44.9 1.0 33 1.0 10.2 59.0
SMA6J33A 6CM 36.7 40.6 1.0 33 1.0 11.3 53.3
SMA6J36 6CN 40.0 48.9 1.0 36 1.0 9.3 64.3
SMA6J36A 6CP 40.0 44.2 1.0 36 1.0 10.3 58.1
SMA6J40 6CQ 44.4 54.3 1.0 40 1.0 8.4 71.4
SMA6J40A 6CR 44.4 49.1 1.0 40 1.0 9.3 64.5
Notes: (1) V(BR) measured after ITapplied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig.2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
SMA6J5.0 thru 40A
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88389
407-May-02
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
0
25
50
75
100
07525 50 100 125 150 175 200
Peak Pulse Power (PPP) or Current (IPPM)
Derating in Percentage, %
TA — Ambient Temperature (°C)
1 5 10 50 100
tp — Pulse Duration (sec)
Fig. 2 – Pulse Derating Curve
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
Transient Thermal Impedance (°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
IFSM — Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
CJ — Junction Capacitance (pF)
10
100
1,000
10,000
101 100
VWM — Reverse Stand-Off Voltage (V)
10
50
100
Fig. 4 – Typical Junction Capacitance
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
0
50
100
150
IPPM — Peak Pulse Current, % IRSM
Fig. 3 – Pulse W avef orm
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10µsec.
Peak Value
IPPM
Half Value — IPP
IPPM 2
td
10/1000µsec. Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t — Time (ms)
PPPM — Peak Pulse Power (kW)
Fig. 1 – P eak Pulse P o wer Rating Curve
0.1
1
10
100
0.1µs 1.0µs10µs
td — Pulse Width (sec.)
100µs 1.0ms 10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
Measured at
Zero Bias
8.3ms Single Half Sine-Wave
(JEDEC Method)
Uni-Directional
Measured at
Stand-Off
Voltage, VWM
TJ = 25°C
f = 1.0MHz
