SMA6J5.0 thru 40A Vishay Semiconductors New Product formerly General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors DO-214AC (SMA) Stand-off Voltage 5.0 to 40V Peak Pulse Power 600W Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout 0.066 MIN. (1.68 MIN.) Dimensions in inches and (millimeters) 0.094 MAX. (2.38 MAX.) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) MAX. 0.208 (5.28) 0.194 (4.93) Mechanical Data Case: JEDEC DO-214AC molded plastic over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds at terminals Polarity: The band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.002 oz., 0.064 g Packaging Codes - Options (Antistatic): 51 - 1K per Bulk box, 20K/carton 61 - 1.8K per 7" plastic Reel (12mm tape), 36K/carton 5A - 7.5K per 13" plastic Reel (12mm tape), 75K/carton Features * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Optimized for LAN protection applications * Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) * Ideal for EFT protection of data lines in accordance with IEC 1000-4-4 (IEC801-4) * Low profile package with built-in strain relief for surface mounted applications * Glass passivated junction * Low incremental surge resistance, excellent clamping capability * 600W peak pulse power capability with a 10/1000s waveform, repetition rate (duty cycle): 0.01% * Very fast response time Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol Value Unit Peak pulse power dissipation with a 10/1000s waveform(1,2) (see fig. 1) PPPM 600 W Peak pulse current with a 10/1000s waveform(1) IPPM See Next Table A Peak forward surge current 8.3ms single half sine-wave uni-directional only(2) IFSM 70 A Typical thermal resistance, junction to ambient(3) RJA 110 C/W Typical thermal resistance, junction to lead RJL 25 C/W TJ, TSTG -55 to +150 C Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout Document Number 88389 07-May-02 www.vishay.com 1 SMA6J5.0 thru 40A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. V F Device Type Device Marking Code SMA6J5.0 SMA6J5.0A SMA6J6.0 SMA6J6.0A SMA6J6.5 SMA6J6.5A SMA6J7.0 SMA6J7.0A SMA6J7.5 SMA6J7.5A SMA6J8.0 SMA6J8.0A SMA6J8.5 SMA6J8.5A SMA6J9.0 SMA6J9.0A SMA6J10 SMA6J10A SMA6J11 SMA6J11A SMA6J12 SMA6J12A SMA6J13 SMA6J13A SMA6J14 SMA6J14A SMA6J15 SMA6J15A SMA6J16 SMA6J16A SMA6J17 SMA6J17A SMA6J18 SMA6J18A SMA6J20 SMA6J20A SMA6J22 SMA6J22A SMA6J24 SMA6J24A SMA6J26 SMA6J26A SMA6J28 SMA6J28A SMA6J30 SMA6J30A 6AD 6AE 6AF 6AG 6AH 6AK 6AL 6AM 6AN 6AP 6AQ 6AR 6AS 6AT 6AU 6AV 6AW 6AX 6AY 6AZ 6BD 6BE 6BF 6BG 6BH 6BK 6BL 6BM 6BN 6BP 6BQ 6BR 6BS 6BT 6BU 6BV 6BW 6BX 6BY 6BZ 6CD 6CE 6CF 6CG 6CH 6CK Breakdown Voltage V(BR) (V)(1) Min Max 6.40 7.82 6.40 7.07 6.67 8.15 6.67 7.37 7.22 8.82 -7.22 7.98 7.78 9.51 7.78 8.60 8.33 10.2 8.33 9.21 8.89 10.9 8.89 9.83 9.44 11.5 9.44 10.4 10.0 12.2 10.0 11.1 11.1 13.6 11.1 12.3 12.2 14.9 12.2 13.5 13.3 16.3 13.3 14.7 14.4 17.6 14.4 15.9 15.6 19.1 15.6 17.2 16.7 20.4 16.7 18.5 17.8 21.8 17.8 19.7 18.9 23.1 18.9 20.9 20.0 24.4 20.0 22.1 22.2 27.1 22.2 24.5 24.4 29.8 24.4 26.9 26.7 32.6 26.7 29.5 28.9 35.3 28.9 31.9 31.1 38.0 31.1 34.4 33.3 40.7 33.3 36.8 Test Current at IT (mA) 10 10 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (V) 5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 = 3.5V at IF = 25A (uni-directional only) Maximum Maximum Maximum Reverse Leakage Peak Pulse Surge Clamping at VWM Current IPPM Voltage at IPPM ID (A) (A)(2) VC (V) 800 62.5 9.6 800 65.2 9.2 800 52.6 11.4 800 58.3 10.3 500 48.8 12.3 500 53.6 11.2 200 45.1 13.3 200 50.0 12.0 100 42.0 14.3 100 46.5 12.9 50 40.0 15.0 50 44.1 13.6 10 37.7 15.9 10 41.7 14.4 5.0 35.5 16.9 5.0 39.0 15.4 1.0 31.9 18.8 1.0 35.3 17.0 1.0 29.9 20.1 1.0 33.0 18.2 1.0 27.3 22.0 1.0 30.2 19.9 1.0 25.2 23.8 1.0 27.9 21.5 1.0 23.3 25.8 1.0 25.9 23.2 1.0 22.3 26.9 1.0 24.6 24.4 1.0 20.8 28.8 1.0 23.1 26.0 1.0 19.7 30.5 1.0 21.7 27.6 1.0 18.6 32.2 1.0 20.5 29.2 1.0 16.8 35.8 1.0 18.5 32.4 1.0 15.2 39.4 1.0 16.9 35.5 1.0 14.0 43.0 1.0 15.4 38.9 1.0 12.9 46.6 1.0 14.3 42.1 1.0 12.0 50.0 1.0 13.2 45.4 1.0 11.2 53.5 1.0 12.4 48.4 Notes: (1) V(BR) measured after IT applied for 300s square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 88389 07-May-02 SMA6J5.0 thru 40A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. V F Device Type Device Marking Code SMA6J33 SMA6J33A SMA6J36 SMA6J36A SMA6J40 SMA6J40A 6CL 6CM 6CN 6CP 6CQ 6CR Breakdown Voltage V(BR) (V)(1) Min Max 36.7 44.9 36.7 40.6 40.0 48.9 40.0 44.2 44.4 54.3 44.4 49.1 Test Current at IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (V) 33 33 36 36 40 40 = 3.5V at IF = 25A (uni-directional only) Maximum Maximum Maximum Reverse Leakage Peak Pulse Surge Clamping at VWM Current IPPM Voltage at IPPM ID (A) (A)(2) VC (V) 1.0 10.2 59.0 1.0 11.3 53.3 1.0 9.3 64.3 1.0 10.3 58.1 1.0 8.4 71.4 1.0 9.3 64.5 Notes: (1) V(BR) measured after IT applied for 300s square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 Document Number 88389 07-May-02 www.vishay.com 3 SMA6J5.0 thru 40A Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage, % Fig. 1 - Peak Pulse Power Rating Curve PPPM -- Peak Pulse Power (kW) 100 Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25C 10 1 0.2 x 0.2" (0.5 x 0.5mm) Copper Pad Areas 0.1 0.1s 1.0s 10s 100s 1.0ms 100 75 50 25 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Areas 0 10ms 0 td -- Pulse Width (sec.) 100 125 150 10,000 TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10sec. Peak Value IPPM 100 CJ -- Junction Capacitance (pF) IPPM -- Peak Pulse Current, % IRSM 75 Half Value -- IPP 2 IPPM 50 175 200 Fig. 4 - Typical Junction Capacitance Fig. 3 - Pulse Waveform 10/1000sec. Waveform as defined by R.E.A. TJ = 25C f = 1.0MHz Measured at Zero Bias 1,000 Measured at Stand-Off Voltage, VWM 100 td Uni-Directional 10 1.0 0 3.0 2.0 1 4.0 IFSM -- Peak Forward Surge Current (A) 1000 100 10 0.01 0.1 1 10 tp -- Pulse Duration (sec) www.vishay.com 4 100 Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only Fig. 5 - Typical Transient Thermal Impedance 1 0.001 10 VWM -- Reverse Stand-Off Voltage (V) t -- Time (ms) Transient Thermal Impedance (C/W) 50 TA -- Ambient Temperature (C) 150 0 25 100 1000 100 8.3ms Single Half Sine-Wave (JEDEC Method) 50 10 1 5 10 50 100 Number of Cycles at 60 Hz Document Number 88389 07-May-02