MBRS3200T3D - ON Semiconductor

August, 2005 − Rev. 3 1Publication Order Number:

MBRS3200T3/D

MBRS3200T3

Surface Mount

Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes in surface mount

applications where compact size and weight are critical to the system.

Features

•Small Compact Surface Mountable Package with J−Bend Leads

•Rectangular Package for Automated Handling

•Highly Stable Oxide Passivated Junction

•Very High Blocking Voltage − 200 V

•150°C Operating Junction Temperature

•Guard−Ring for Stress Protection

•Pb−Free Package is Available

Mechanical Charactersistics

•Case: Epoxy, Molded, Epoxy Meets UL 94, V−0

•Weight: 95 mg (approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Cathode Polarity Band

•Device Meets MSL 1 Requirements

•ESD Ratings: Machine Model = A

ESD Ratings: Human Body Model = 1C

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

200 V

Average Rectified Forward Current

(TL = 120 °C) IF(AV) 3.0 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

IFSM 100 A

Operating Junction Temperature TJ−65 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

Device Package Shipping†

ORDERING INFORMATION

SMB

CASE 403A

PLASTIC

MBRS3200T3 SMB 2500/Tape & Reel

SCHOTTKY BARRIER

RECTIFIER

3.0 AMPERE

200 VOLTS

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MBRS3200T3G SMB

(Pb−Free) 2500/Tape & Reel

B320 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

AYWW

B320G

MARKING DIAGRAM

MBRS3200T3

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THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction−to−Lead (Note 1)

Thermal Resistance, Junction−to−Ambient (Note 2) RqJL

RqJA 13

62 °C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 3)

(IF = 3.0 A, TJ = 25°C)

(IF = 4.0 A, TJ = 25°C)

(IF = 3.0 A, TJ = 150°C)

VF0.84

0.86

0.59

Maximum Instantaneous Reverse Current (Note 3)

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 150°C)

IR1.0

5.0 mA

1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board.

2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.

100

0.1 10.2 0.3 0.4 0.5 0.6 0.7

VF, INSTANTANEOUS VOLTAGE (V)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

0.8 0.9 1.1 1.2

IF, FORWARD CURRENT (A)

TC = 25°C

TC = 150°C

TC = 100°C

100

0.1 10.2 0.3 0.4 0.5 0.6 0.7

VF, INSTANTANEOUS VOLTAGE (V)

0.8 0.9 1.1 1.2

IF, FORWARD CURRENT (A)

TC = 25°C

TC = 150°C

TC = 100°C

1.0E−09 1600 20 40 60 80 100

VR, REVERSE VOLTAGE (V)

Figure 3. Typical Reverse Current

120 140 180 200

, REVERSE CURRENT (A)

TC = 25°C

TC = 150°C

TC = 100°C

1.0E−08

1.0E−07

1.0E−06

1.0E−05

1.0E−04

1.0E−03

1.0E−06 1600 20 40 60 80 100

VR, REVERSE VOLTAGE (V)

Figure 4. Maximum Reverse Current

120 140 180 20

IR, MAXIMUM REVERSE CURRENT (A)

TC = 25°C

TC = 150°C

1.0E−05

1.0E−04

1.0E−03

1.0E−02

1.0E−01

MBRS3200T3

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Figure 5. Typical Capacitance

1000

10 1600 20 40 60 80 100

VR, REVERSE VOLTAGE (V)

100

120 140 180 200

C, CAPACITANCE (pF)

TC = 25°C

f = 1 MHz

Typical Capacitance

at 0 V = 209 V

015080 90 100 110 120

TL, LEAD TEMPERATURE (°C)

Figure 6. Current Derating − Lead

130 140 16

IF, AVERAGE FORWARD CURRENT (A)

5SQUARE WAVE

Figure 7. Forward Power Dissipation

040123

IO, AVERAGE FORWARD CURRENT (A)

2.5

Pfo, AVERAGE POWER DISSIPATION (W)

0.5

1.5

4.5

3.5

4SQUARE WAVE

MBRS3200T3

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PACKAGE DIMENSIONS

SMB

PLASTIC PACKAGE

CASE 403A−03

ISSUE E

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

2.261

0.089

2.743

0.108

2.159

0.085 ǒmm

inchesǓ

SCALE 8:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

AMIN NOM MAX MIN

MILLIMETERS

1.90 2.13 2.41 0.075

INCHES

A1 0.05 0.10 0.15 0.002

b1.96 2.03 2.11 0.077

c0.15 0.23 0.30 0.006

D3.30 3.56 3.81 0.130

E4.06 4.32 4.57 0.160

L0.76 1.02 1.27 0.030

0.084 0.095

0.004 0.006

0.080 0.083

0.009 0.012

0.140 0.150

0.170 0.180

0.040 0.050

NOM MAX

5.21 5.44 5.59 0.205 0.214 0.220

0.51 REF 0.020 REF

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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

MBRS3200T3/D

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