DATA SH EET
Product specification
Supersedes data of 1997 Mar 05 1999 Apr 15
DISCRETE SEMICONDUCTORS
BC817W
NPN general purpose transistor
b
ook, halfpage
M3D102
1999 Apr 15 2
Philips Semiconductors Product specification
NPN general purpose transistor BC817W
FEATURES
High current (max. 500 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complement: BC807W.
MARKING
Note
1. = - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER MARKING
CODE(1) TYPE
NUMBER MARKING
CODE(1)
BC817W 6DBC818W 6H
BC817-16W 6ABC818-16W 6E
BC817-25W 6BBC818-25W 6F
BC817-40W 6CBC818-40W 6G
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCEO collector-emitter voltage open base; IC=10mA 45 V
VEBO emitter-base voltage open collector 5V
I
Ccollector current (DC) 500 mA
ICM peak collector current 1A
I
BM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 200 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 15 3
Philips Semiconductors Product specification
NPN general purpose transistor BC817W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =20V 100 nA
IE= 0; VCB = 20 V; Tj= 150 °C5µA
IEBO emitter cut-off current IC= 0; VEB =5V 100 nA
hFE DC current gain IC= 100 mA; VCE = 1 V; note 1;
see Figs 2, 3 and 4
BC817W 100 600
BC817-16W 100 250
BC817-25W 160 400
BC817-40W 250 600
DC current gain IC= 500 mA; VCE = 1 V; note 1 40
VCEsat collector-emitter saturation
voltage IC= 500 mA; IB= 50 mA; note 1 700 mV
VBE base-emitter voltage IC= 500 mA; VCE = 1 V; note 1 1.2 mV
Cccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz 5pF
f
Ttransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz 100 MHz
1999 Apr 15 4
Philips Semiconductors Product specification
NPN general purpose transistor BC817W
Fig.2 DC current gain; typical values.
BC817-16W.
handbook, full pagewidth
0
20
40
80
120
160
MBH721
1011
hFE
10 IC (mA)
102103
VCE = 1 V
Fig.3 DC current gain; typical values.
BC817-25W.
handbook, full pagewidth
0
500
100
200
300
400
MBH720
1011
hFE
10 IC (mA)
102103
VCE = 1 V
1999 Apr 15 5
Philips Semiconductors Product specification
NPN general purpose transistor BC817W
Fig.4 DC current gain; typical values.
BC817-40W.
handbook, full pagewidth
0
500
100
200
300
400
MBH722
1011
hFE
10 IC (mA)
102103
VCE = 1 V
1999 Apr 15 6
Philips Semiconductors Product specification
NPN general purpose transistor BC817W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee
1
H
E
L
pQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
1999 Apr 15 7
Philips Semiconductors Product specification
NPN general purpose transistor BC817W
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 15 Document order number: 9397 750 05682