LESHAN RADIO COMPANY, LTD.
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LBSS84LT1G
1
SOT –23
2
3
Power MOSFET
130 mAmps, 50 Volts
P–Channel SOT–23
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered
products such as computers, printers, cellular and cordless telephones.
•Energy Efficient
•Miniature SOT–23 Surface Mount Package Saves Board Space
Symbol Value Unit
Drain–to–Source Voltage VDSS 50 Vdc
Gate–to–Source Voltage – Continuous VGS ±20 Vdc
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp≤ 10 µs) ID
IDM
130
520
mA
Total Power Dissipation @ TA = 25°C PD225 mW
Operating and Storage Temperature
Range TJ,T
stg – 55 to
150 °C
Thermal Resistance – Junction–to–Ambient RθJA 556 °C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds TL260 °C
Rating
MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)
°
3 Drain
1
2
-
Gate
Source
Marking Diagram
PD
W
W = Work Week
•Pb-Free Package is available.
Device Package Shipping
LBSS84LT1G SOT-23 3000/Tape&Reel
LBSS84LT3G SOT-23 10000/Tape&Reel
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc) V(BR)DSS 50 – – Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS –
–
–
–
–
–
0.1
15
60
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS – – ±60 µAdc
ON CHARACTERISTICS (Note 1.)
Gate–Source Threaded Voltage
(VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 – 2.0 Vdc
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc) rDS(on) – 5.0 10 Ohms
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) |yfs| 50 – – mS
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 5.0 Vdc) Ciss – 30 – pF
Output Capacitance (VDS = 5.0 Vdc) Coss – 10 –
Transfer Capacitance (VDG = 5.0 Vdc) Crss – 5.0 –
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time td(on) – 2.5 – ns
Rise Time (VDD = –15 Vdc, ID = –2.5 Adc, tr– 1.0 –
Turn–Off Delay Time
(VDD 15 Vdc
,
ID2
.
5 Adc
,
RL = 50 Ω)td(off) – 16 –
Fall Time tf– 8.0 –
Gate Charge QT– 6000 – pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current IS– – 0.130 A
Pulsed Current ISM – – 0.520
Forward Voltage (Note 2.) VSD – 2.5 – V
1. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
LBSS84LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1 1.5 2 2.5 3
ID, DRAIN CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
VDS = 10 V
150°C
25°C
-55°C
024 10
0
0.15
0.2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
13 957
3.25 V
2.75 V
2.25 V
2.5 V
3.0 V
VGS = 3.5 V
4
0.35
0.4
0.5
0.45 TJ = 25°C
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LESHAN RADIO COMPANY, LTD.
LBSS84LT1G
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 3. On–Resistance versus Drain Current
0 0.2 0.4 0.6
2
5
6
Figure 4. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance Variation with Temperature
1
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Charge
25°C
VGS = 4.5 V
VGS = 10 V
ID = 0.52 A
-ā55 -5 45 95 145
4
0.6
0.8
3
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.4 0.6
2
5
6
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
4
3
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
6
2
0
QT, TOTAL GATE CHARGE (pC)
8
4
500
VDS = 40 V
TJ = 25°C
1000
ID = 0.5 A
1500
0.1 0.3 0.5
150°C
-55°C
7
4.5
5.5
3.5
2.5
6.5
0.1 0.3 0.5
1.2
2
1.4
1.6
1.8
VGS = 4.5 V
ID = 0.13 A
2000
150°C
25°C
-55°C
8
9
7
5
1
7
3
TYPICAL ELECTRICAL CHARACTERISTICS
0.001
0.1
1
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
ID, DIODE CURRENT (AMPS)
TJ = 150°C
0 0.5 1.0 1.5
0.01
-55°C25°C
2.0 2.5 3.0
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LESHAN RADIO COMPANY, LTD.
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A0.1102 0.1197 2.80 3.04
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOT
-
23
DJ
K
L
A
C
BS
H
GV
12
3
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
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LBSS84LT1G
LESHAN RADIO COMPANY, LTD.
Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only
EMBOSSED TAPE AND REEL DATA
FOR DISCRETES
A
T Max
Outside Dimension
Measured at Edge
G
Inside Dimension
Measured Near Hub
20.2mm Min
(.795’’)
1.5mm Min
(.06’’)
13.0mm ± 0.5mm
(.512 ±.002’’)
50mm Min
(1.969’’)
Full Radius
Size A Max G T Max
8 mm
12mm
16mm
24 mm
330mm
(12.992’’)
330mm
(12.992’’)
360mm
(14.173’’)
360mm
(14.173’’)
8.4mm+1.5mm, -0.0
(.33’’+.059’’, -0.00)
12.4mm+2.0mm, -0.0
(.49 ’’+ .079’’, -0.00)
16.4mm+2.0mm, -0.0
(.646’’+.078’’, -0.00)
24.4mm+2.0mm, -0.0
(.961’’+.070’’, -0.00)
14.4mm
(.56’’)
18.4mm
(.72’’)
22.4mm
(.882’’)
30.4mm
(1.197’’)
LESHAN RADIO COMPANY, LTD.
Storage Conditions
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)
Humidity: 30 to 80 RH (40 to 60 is preferred )
Recommended Period: One year after manufacturing
(This recommended period is for the soldering condition only. The
characteristics and reliabilities of the products are not restricted to
this limitation)
Shipment Specification
10 Reel
12 Inner Box/Carton
360KPCS/Carton
Dim(Unit:mm)
Dim(Unit:mm)
10Reel/Inner Box
30KPCS/Inner Box
LABEL
CPN
LABEL LABEL
LABEL
乐山无线电股份有限公司
Leshan Radio Com
p
an
y,
Ltd.
MARK
195mm*195mm*150mm
460mm*400mm*420mm
8000PCS/Reel (SOT-723,SOD-723)
3000PCS/Reel 80KPCS/Inner Box (SOT-723,SOD-723)
960KPCS/Carton (SOT-723,SOD-723)
LESHAN RADIO COMPANY, LTD.
