MOTOROLA SEMICONDUCTOR TECHNICAL DATA Figure 1. Darlington Circuit Schematic MJi1013 High-Current Complementary MJ11015 Beau a Silicon Transistors NPN -.. for use as output devices in complementary general purpose amplifier applica- MJ 1 1 01 2 tions. High DC Current Gain heg = 1000 (Min) @ Io - 20 Adc MJ 1 4 01 4 * Monolithic Constructlon with Built-in Base Emitter Shunt Resistor Junction Temperature to +200C MJ { 4 O1 6* MAXIMUM RATINGS *Motorola Preferred Davice MJT1013 | MJ11015 Rating Symbol | Muti012 | Mutt014 | Mu11016 | Unit DARLINGTON Collector~Emitter Voltage VCEO 60 90 120 Vde POWER TRANSISTORS Collector-Base Voltage Vos 60 90 120 Vde come TLCoN RY Emitter-Base Voltage VEB 5 Vde 60-120 VOLTS Collector Current ic 30 Ade 200 WATTS Base Current Ip 1 Ade Toial Device Dissipation @Tc = 25C Pp 200 Watts Derate above 25C @ To = 100C 4.16 WIG Operating Storage Junction TJ, Tstg 55 to +200 G Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Reuc 0.87 CW Sonos. Maximum Lead Temperature for TL 275 G (TO-3) Soldering Purposes for = 10 Seconds. PNP COLLECTOR NPN COLLECTOR MJi1013 9 MJ11012 ? M1015 Po I MIHOB FOOT Toe 7 | M1016 ! BASE BASE I a | i | i | | I | I ee =! Ca as et od o o EMITTER EMITTER Preferred devices are Motorola racommanded choices for future use and bast overall value. REV 1 8-478 Moiorola Bipolar Power Transistor Device DataMJ11013 MJ11015 MJ11012 MJ11014 MJ11016 ELECTRICAL CHARACTERISTICS (Tg = 25C unless otherwise noted.) [ Characteristics [ Symbot [| Min | Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) V(BR)CEG Vde (ig = 100 mAde, |B = 0) MJ11012 60 _ MJ11013, MJ11014 90 _ MJ11015, MJ11016 120 _ Collector~Emitter Leakage Current IcER mAdc (VcE = 60 Vde, Ree = 1k ohm) MJ11012 - (VCE = 90 Vde, Ree = 1k ohm) MJ11013, MJ11014 _ (VCE = 120 Vde, Age = 1k ohm) MJ11015, MJ11016 (VCE = 60 Vde, Rae = 1k ohm, To = 150C) MJ11012 _ (VCE = 90 Vde, Ree = 1k ohm, Tc = 150C) MJ11013, MJ14014 (VoE = 120 Vde, Rpg = 1k ohm, Tg = 150C) MJ11015, MJ11016 alpagaa- Emitter Cutoff Current lEBO _ mAdc (VBE = 5 Vde, Ic = 0) Collector-Emitter Leakage Current ICEO _ 1 mAde (VCE = 50 Vde, Ip = 0) ON CHARACTERISTICS(1) DC Current Gain ~ : hfe _ (Io = 20 Ade, VcE = 5 Vdc) 1000 _ (Io = 30 Ade, Voge = 5 Vdo) 200 _ Collector-Emitter Saturation Voltage : VCE (sat) Vde (Ig = 20 Ade, Ig = 200 mAde) 3 (Ig = 30 Ade, Ip = 300 mAdc) _ 4 BaseEmitter Saturation Voltage VBE(sat) Vde (Ic = 20 A, Ip = 200 mAdc) _ 3.6 {Ig = 30 A, Ig = 300 mAdc) _ 5 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product hie 4 _ MHz (Ig = 10 A, Vog = 3 Vde, f= 1 MHz) (1) Pulse Test: Pulse Width = 300 ps, Duty Cycle = 2.0%. Motorola Bipolar Power Transistor Device Data , 3-479MJ11013 MJ11015 MJ11012 MJ11014 MJ11016 30k 20k ~ PNP MJ11013, MU11015 ae NPN MI11012, MJ11014, MU11016 10k Tk 5k 3k 2k hre, DG CURRENT GAIN 700 -F Vog = 5 Vde 500 Ty = 25C 03 05 07 1 2 3 5 7 10 Ic, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain (1) 20 30 PNP MJ11013, MJ11015 ~ NPNMJ11012, MJ11014, MU11016 4 Ty = 25C V, VOLTAGE (VOLTS) 1 02 05 1 2 5 10 20 50 100 ic, COLLECTOR CURRENT (AMP) Figure 4, On Voltages (1) There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate lo ~VcE lim- its of the transistor that must be observed for reliable opera- tions e.g., the transistor must not be subjected to greater hpg, SMALL-SIGNAL CURRENT GAIN (NORMALIZED 2 { 05 0.2 O41 0.05 ne PNPMJ11013,MJ11015 OTE eee NPN MJ11092, MU11014, Mu11016 0.01 VE =3 Vde 0.005 F Ig = 10 mAde Ty = 25C 10 30 80 70 100 200 300 500 700 1.0k f, FREQUENCY {kHz) Figure 3. Small-Signal Current Gain 50 - 20 = 10 E 5 #2 1 8 05 0.2 | _. . BONDING WIRE LIMITATION 0.1 | __ _._. THERMAL LIMITATION @ Tg = 25C 0.05} __ SECOND BREAKDOWN LIMITATION 002 MJ11012 0.01 MS11013, MJi1014 _MJ11015, MJ11016 5 7 10 20 30 50 70 100 200 Voge, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region DC Safe Operating Area dissipation than the curves Indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values Jess than the limita- tions imposed by secondary breakdown. 3-480 Motorola Bipolar Power Transistor Device Data