2N3675 -2N3765 Numerical Index =| MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS a ~ ~ - EE] | REPLACE | PAGE Po |S} Ti | Vee | Voce |-2 tre @ Ie Versan @ Ie #/ tole TRE JE (S| ment | numaer | USE = 8 2 elm |B) 2/2 =| @25C | S| C | (volts) | (volts) | | (min) (max) S} (volts) s 3 5|s 2N3675 |S|]N PMS 8.8W | C |} 200 90 55 ]0 12 60 1.0A 0.8 1L.0A L.OM | T 2N3676 |S|N PMS | 8.8W]C | 200 90 90 {GO} 12) 60} 1.0A 0.8} L.0A 1L.OM4T 2N3677 | S| P CHP | 0.4w | A | 200 30 20 |o 5.0M | T 2N3678 | SIN HSS 0.8W | A | 200 75 55 | 0 40 | 120 | 0.15A 0.4} 0.154 250M |] T 2N3679 | Unijunction Transistor, see Table on Page 1-174 2N3680 | S|N DFA 0.3W | A {| 200 60 50 | O | 150 | 600 1Lo* 0.7 10M 300 /E 60M | T 2N3681 |S |N RFA 0.2W ] A | 200 10 7.0 ]0 20 | 220 2.0M 0.37 4.0M 20 ]E 1.06 |T 2N3682 | S|N RFA | 0.36W | A | 200 40 15 | 0 40] 120 10M 45 ]E 600M | T 2N3683 | S|N RFA Q.2W | A | 200 30 12/0 20 | 150 8.0M 30 ]E 1.06 }T 2N3684 thru Field Effect Transistors, see Table on Page 1-166 2N3687 2N3688 |S |N REC O.2wWw } A 1125 40 40 ]0 30 4.0M 400M | T 2N3689 |S] N RFC | 0.2w | A | 125 40 40,0] 30 4.0M 400M | T 2N3690 |} S|N RFC 0.2W | A] 125 40 40 ]0 30 4.0M 400M | T 2N3691 |S} N | MPS6512 5-109] AFC 0.2W | A | 125 35 20 ]0 40 | 160 10M 0.7 LOM 40 ]/E 200M | T 2N3692 |S} N | MPS6513 5-109} AFC 0.2W | A] 125 35 20 | O | 100 | 400 10M 0.7 10M 100 FE 200M 4 T 2N3693 )}S}N REC O.2W } A) 125 45 45 10 40 | 160 10M 200M ) T 2N3694 |S |N RFC O.2W | A] 125 45 45 | 0 4100 j 400 LOM 200M | T 2N3695 ghra 3 Field Effect Transistors, see Table on Page 1-166 N369. 2N3700 |S | N RFA O.5w | A | 200 140 80 | 0 | 100 | 300 1 0.154 0.2 | O.15A 80 |E 100M | T 2n3701 | 8 | N RFA | 0.5w]A|200| 140 | 80/0 | 40|120]0.15a | 0.2|0.15a | 30/8 | 8om|T 2N3702 |S | P AFC 0.3w | A | 150 40 25 |0 60 | 300 50M 0.25 50M 100M | T 2N3703 | Sj P AFC | 0.3W 7A | 150 50 30 |O | 30] 150 50M { 0.25 50M 100M | 2N3704 |S |N AFC | 0.36W {A | 150 50 30 | 0 | 100 | 300 50M 0.6 O.1A 100M | T 2N3705 |S |N AFC | 0,36W | A {150 50 30 | 0 50 | 150 50M 0.8 O.1A 100M | T 2N3706 |S |N AFC { 0.36W | A 1150 40 20 | 0 30 | 600 50M 1.0 O.1A 100M {[ T 2N3707 |S |N AFC | 0,25W | A | 150 30 30 | 0 | 100 j 400 O.1M 1.0 LOM 100 | E 2N3708 |S] N AFC | 0.25W | A | 150 30 30 10 45 | 660 1.0M 1.0 10M 45 /E 2N3709 |S]N AFC | 0.25W | A | 150 30 30 ]0 45 | 165 1.0M 1.0 10M 45 /E 2N3710 |S} N AFC | 0.25W | A | 150 30 30 10 90 | 330 1.0M 1.0 10M S0/E aNn3711 )S)N AFC ] 0.25W |} A ] 150 30 30 | O 1180 | 660 1.0M 1.0 10M 180 )E 2N3712 |S | N RFC 0.8W 1A | 200 150 150 | 0 30 | 150 30M 2.0 50M 25 |/E 40M] T 2N3713 |S |N 7-125 | HPA 150w | C | 200 80 60 | 0 25 75 1.04 1.0 5.0A 25 |E 30K | E 2N3714 |S |N 7-125 | HPA 150W | C } 200 100 80 | 0 25 75 1.0A 1.0 5.0A 25 /E 30K | E 2N3715 |S | N 7-125 | HPA 150W | C } 200 80 60 | 0 50 | 150 1,0A 0.8 5,04 25 /E 30K { E 2N3716 |S |N 7-125] HPA L50W | C } 200 100 80 | 0 50 | 150 1.04 0.8 5.0A 25 |[E 30K | E 2N3717 | S| N HPA 7.5W | C | 200 60 60 |S |2.0 | 100 O.5A 1.0 O.5A 250M | T 2N3718 |S |N HPA 10W | Cc | 200 60 60 7S | 2.0 | 100 O.5A 1.0 O.5A 250M | T 2N3719 |S7]P 7-129 PHS 6.0W | C | 200 40 40 10 25 | 180 1.0A LS O.3A 60M | T 2N3720 | S| P 7-129] PHA 6.0W | C | 200 60 60 | 0 25 | 180 1.0A L.5 3.0A 60M | T 2N3721 |S|N AFC O.2w }A |}125 18 18/0 60 | E 2N3722 |S |N MSS 0.8W | A | 200 80 60 | 0 40 | 150 O.1A 0,22 O.1A 300M [T 2N3723 |S] N HSS 0.8W | A | 200 100 80 | 0 40 | 150 O.1A 0.25 10M 300M | T 2N3724 | S/N HSS | 0.8W | A | 200 50 30 ]0 ; 607150] O.1A 0.2] O.1A 300M | T 2N3724A} S| N 8-257 | HSS lw jA 50 30 | 0 60 | 150 100M 0.2 100M 2N3725 |S|N HSS 0.8W ] A | 200 80 50 | 0 60 | 150 Q.1A 0.26 O.1A 300M) T 2N3725A) S | N 8-257] HSS W fA 80 50] 0 60 | 150 100M 0.26 100M 3/E 2N3726 |S] P DFA 0.4w | A | 200 45 45 | 0 |135 | 350 1.0M 0.25 50M 135 ]E 200M | T 2N3727 |S | P DFA 0.4w | A { 200 45 45 | 0 1135 | 350 L.0M 0.25 50M 135 }E 200M | T 2N3728 |S|N DFA | 0.45wW | A | 200 60 30 | 0 80 | 280 | 0.154 0.221) 0.154 50 |E 250M | T 2N3729 | S|N DFA | 0.45w | A | 200 60 30 | 0 80 | 280 | 0.154 0.22 10.154 SO TE 250M | T 2N3730 |G] P 8-259] LPA 10w | A | 100 200 200 |S 2N3731 |G] P 8-259] LPA 5.0W | A | 100 320 320 15 15 6.0A 2N3732 | G| P 8-259 , LPA 3,0W | A | 100 100 100 {$s 35 | 500 O.7A 1.0M | T 2N3733 |S | N 9-82 HPA 23wW | Cc } 200 65 40 |0 LO | 150 | 0.254 1.0 1.0A 250M | T 2N3734 |S |N 8-259] HSS 1,0W | A | 200 50 30 | O 30 | 120 1.04 0.2 10M 300M | T 2N3734A] S | N 8-259| HSS] 1.OW]A 50 30 | 0} 30]120] 1.0A 0.9} 1.0A | 2.5]E 2N3735 | S| N 8-259] HSS 1.0Ww | A | 200 75 50] 0 20 80 1.0A 0.2 LOM 250M | T 2N3735A| S | N 8-259] HSS LOW sA 75 50/0 20 80 1.04 0.9 1.0A 2.5/E 2N3736 {S| N 8-259] HSS O.5wW | A | 200 50 30 1)0 30 | 120 1,04 0.2 10M 300M | T 2N3736A) S| N 8-259] HSS O.SW TA 50 30] 0 30 | 120 L.OA 0.9 LOA 2.5) 2N3737 }SIN 8-259 | HSS O.5W ) A | 200 75 50 790 20 80 L.OA 0.2 10M 250M | T 2N3737A) S| N 8-259] HSS O.SW IA 75 50 | 0 20 80 1.04 0.9 1.04 2.575 2N3738 |S] N 7-133 | LPA 20W | Cc | 175 250 225/10 40 | 200 O.1A 2.5] 0.25A 35 ]E 15M{T 2N3739 | S|N 7-133 | LPA 20W | C | 175 325 300 | 0 40 | 200 O.1A 2.510.254 35) E LSM] T 2N3740 | S| P 7-137 | LPA 25w ;C | 200 60 60/0 30 | 100 | 0.25Aa 0.6 1.04 25/E 4.0M} T 2N3741 |S] P 7-137 | LPA 25W }C | 200 80 80 40 30 | 100 | 0.25A 0.6 1.0A 25]E 4.0M|T 2N3742 | S| N 8-265] VID 1.0W | A [200 | 300 | 300 | 0 | 20 | 200 30M 1.0 10M 20]; E 30M | T 2N3743 |S | P 8-269] vin] 1.ow}A}200} 300 | 300]0] 25 } 250 30M 5.0 10M 30] E 30M | T 2N3744 |S) N HPA 30W | C } 200 60 40] 0 20 60 1.04 0.25 1.0A 20/5 30M | T 2N3745 | S| N HPA 30W | C | 200 80 60/0} 20] 60}; 1.0A] 0.25] 1.04 20], E 30M | T 2N3746 1 S[N HPA 30W | C | 200 100 80) 0 20 60 L.OA 0,25 1L.OA 20} E 30M] T 2N3747 | S| N HPA 30W | C | 200 60 4010 40 | 120 1.0A 0.25 1.0A 40]/E 40M | T 2N3748 |S |N HPA 30w | C | 200 80 60 | 0 40 | 120 L.0A 0.25 1.04 40] E 40M | T 2N3749 | S| N HPA 30W | Cc | 200 100 80 | 0 40 | 120 1.0A 0.25 1L.0A 40/E 40M | T 2N3750 1S | N HPA 30W | C 1 200 60 40 ]0 ]100 | 300} 1.0A } 0.25] 1.0A |] 100] E 50M | T 2N3751 |S] N HPA 30W | C | 200 80 60 |O f100] 300] 1.0A] 0.25] 1.0A] 100] E 50M | T Onaga Sy N HPA 30w } C | 200 100 80 | 0] 100 |) 300 1.0A 0.25 1.0A 100) E 50M | T N thru Thyristors, see Table on Page 1-154 2N3761 2N3762 | S| P 8-273] HSS 1.0W | A | 200 40 40] 0 30 | 120 1.04 o.1 10M 180M {| T 2N3763 | S| P 8-273] HSS 1.0W | A | 200 60 60 | 0 20 80 1.0A 0.1 10M 150M} T 2N3764 |S] P 8-273] HSS O.5W | A | 200 40 4010 30 | 120 1.0A O.1 10M 180M | T 2N3765 |S | P 8-273 | HSS O.5wW fA | 200 60 60 | 0 20 80 1.0A O.1 10M 150M | T 1-142Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.0 mAde) BE(sat) - 0.76 (a mAdc, I, = mAdc - . c 100 B 10 mA 0. 86 Co = 300 mAdc, I, = 30 mAdc) - 11 Gy = 500 mAdc, Ip 50 mAdc) 0.9 1.2 dg = 800 mAdc, Int 80 mAdc) - 1.5 My = 1,0 Ade, 1, = 100 mAdc) - 1.7 SMALL-SIGNAL CHARACTERISTICS Current-GainBandwidth Product fp MHz a, = 50 mAdc, Vor = 10 Vdc, f = 100 MHz) 300 - Output Capacitance Cob pF (Vop = 10 Vdc, Ip = 0, f = 140 kHz) 2N3724, 2N4013 - 12 2N3725, 2N4014 - 10 Input Capacitance Ciy pF (Var = 0.5 Vdc, Ine 0, f = 140 kHz) - 55 SWITCHING CHARACTERISTICS Turn-On Time ton - 35 ns (Vaan = 30 Vde, Vip = 3,8 Vdc 5 cc > "BE (aff) ; _ Delay Time Ig = 500 mAde, I; = 50 mAdc) a *0 ns Rise Time (See Figure 1) t. - 30 ns Turn-Off Time tote - 60 ns (Vog = 30 Vde, I, = 500 mAdc, Storage Time ~ . t - 50 ns 31 =lp2 = 50 mAdc) s Fall Time (See Figure 1) 2N3724, 2N4013 te - 25 ns 2N3725, 2N4014 - 30 * Pulse Test: Pulse Width = 300 us, Duty Cycle = 1.0%. FIGURE 1 SWITCHING TIMES TEST CIRCUIT +30Vv < > 15 -3.8V > 1.0 PF ( (o TO SAMPLING OSCILLOSCOPE 1.0k e 4 7 | Zin & 100 k22 TL t< 1.0 ns Vin = 19-7 1.0 BF 100 PULSE GENERATOR . t,. tp < 1.0ns 62 PW. ~ 1.0 ps Zin = 80.Q + == D.C. < 2.0% - ~ 8-258 RF Transistors RF POWER TRANSISTORS (Listed in order of operating test frequency and power output) ALL SILICON NPN f Pout @ Pin Type MHz Ww Ww 2N3295 30 0.3 0.012 2N3296 30 3.0 0.075 2N3297 30 12 1.2 2N2948 30 15 2.0 2N2951, 52 50 0.6 O.1 2N2949, 50 50 3.5 0.35 2N2947 50 15 2.0 2N3950 50 50 4.5 2N3298 30 0.1 - 2N3375 100 7.5 1.0 2N3818 100 15 3.0 2N3553 175 2.5 0.25 2N3961 175 4.0 0.5 2N3924 175 4.0 1.0 2N3925 175 5.0 1.3 2N3926 175 7.0 2.0 2N3927 175 12 4.0 2N3632 175 13.5 3.5 2N3137 250 0.7 0.1 2N3664 250 2.2 0.4 2N3866 400 1.0 0.1 2N3948 400 1.0 90.25 2N4012 400 3.0 (typ) 1.0 2N3375 400 3. 0 (min) 1.0 2N3733 400 10 4.0 HIGH-VOLTAGE TRANSISTORS fp (MHz) @ Ic Type Vcro min max mA 2N4924 100 100 500 20 2N4925 150 100 500 20 2N4926 200 30 300 10 2N4927 250 30 300 10 9-7 BCWwWC WW. KL)[N XQ ,' $)p0D0) 'DYi MWiwyWV BWwiwyisXsiidd;i WM WW2N3/ 30 (SILICON) CASE 36 (TO-60) stud isolated from case RF Transistors MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Vceo = 40 Vde Pour = 10W @ 400 MHz 7] = 45 min @ 400 MHz NPN silicon transistor designed for amplifier, fre- quency multiplier, and oscillator applications. Rating Symbol Value Unit Collector-Emitter Voltage Vero 40 Vde Collector-Emitter Voltage Vv, 65 Vdc (Vv = 1.5 Vdc) CEV EB (off) . Collector-Base Voltage Voz 65 Vde Emitter-Base Voltage Veep 4 Vde Collector Current ln 3 Amps Total Device Dissipation @ Ty, = 25C Ph 23 Watts Derate above 25C 0.13 w/C Operating and Storage Junction Temperature Range Typ ste -65 to +200 C FIGURE 1 400-MHz TEST CIRCUIT +Vee = 28V 2. BIAS STU TEE TUNER 3- = STU 4 =502 TUNER 2N3733 Zs = 50 7.8-17 pF 0.56Q 7.8-17 pF 9-82 RF Transistors 2N3733 (continued) ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voitage* BVoro* Vde (I, = 0 to 200 mAdc, I, = 0) 40 - - Cc B Collector-Emitter Breakdown Voltage* BVog Vv" Vde (ly = 0 to 200 mAdc, VEB(oft) = 1.5 Vdc) 65 - - Collector-Base Breakdown Voltage BYapo Vde Mo = 0.5 mAdc, Ip = 0) 65 - - Emitter-Base Breakdown Voltage BV; BO Vde dp = 0.25 mAdc, I, = 0) 4 - - Cc Collector Cutoff Current loro mAdc Wor = 30 Vdc, Ip = 0) - - 0.25 ON CHARACTERISTICS Collector-Emitter Saturation Voltage Vox(s at) Vdc Mo = 500 mAdc, Ih = 100 mAdc) - - 1 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product fy MHz (I, = 150 mAdc, V,,, = 28 Vdc, f = 100 MHz) - 400 - Cc CE Output Capacitance Cob pF (Vop = 30 Vdc, Ip = 0) - - 20 Collector-Case Capacitance Cy - - 6 pF Base-Spreading Resistance Typ Ohms io =,250 mAdc, Vor = 28 Vdc, f = 200 MHz) - 6.5 - FUNCTIONAL TEST Power Output Vor = 28 Vdc, Pin =4W, Pout - 14.5 - Watts Efficiency f = 260 MHz 7 = 60 = Fy, Power Output Vor = 28 Vde, Pia =4wW, Pout 10 - - Watts Efficiency { = 400 MHz (Figure 1) 7 45 7 7 % *Pulsed through a 25 mH inductor; duty cycle = 50% 9-83