1N5380BTR - MICRO COMMERCIAL COMPONENTS

May, 2013 − Rev. 9

1Publication Order Number:

MUR480E/D

MUR480EG, MUR4100EG

SWITCHMODE

Power Rectifiers

Ultrafast “E’’ Series with High Reverse

Energy Capability

These state−of−the−art devices are designed for use in switching

power supplies, inverters and as free wheeling diodes.

Features

•20 mJ Avalanche Energy Guaranteed

•Excellent Protection Against Voltage Transients in Switching

Inductive Load Circuits

•Ultrafast 75 Nanosecond Recovery Time

•175°C Operating Junction Temperature

•Low Forward Voltage

•Low Leakage Current

•High Temperature Glass Passivated Junction

•Reverse Voltage to 1000 V

•These are Pb−Free Devices*

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 1.1 Gram (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Shipped in Plastic Bags, 5,000 per Bag

•Available Tape and Reel, 1,500 per Reel, by Adding a “RL’’ Suffix to

the Part Number

•Polarity: Cathode indicated by Polarity Band

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage MUR480E

MUR4100E

VRRM

VRWM

VR800

1000

Average Rectified Forward Current

(Square Wave; Mounting Method #3 Per Note 2)

IF(AV) 4.0 @

TA = 35°C

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

IFSM 70 A

Operating Junction and Storage Temperature

Range

TJ, Tstg −65 to

+175

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

ULTRAFAST RECTIFIER

4.0 AMPERES, 800−1000 VOLTS

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AXIAL LEAD

CASE 267

STYLE 1

A = Assembly Location

MUR4xxx = Device Number (see page 2)

YY = Year

WW = Work Week

G= Pb−Free Package

MARKING DIAGRAM

MUR

4xxx

YYWW G

(Note: Microdot may be in either location)

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

MUR480EG, MUR4100EG

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THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Maximum Thermal Resistance, Junction−to−Ambient RqJA See Note 2 °C/W

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 1)

(iF = 3.0 A, TJ = 150°C)

(iF = 3.0 A, TJ = 25°C)

(iF = 4.0 A, TJ = 25°C)

vF1.53

1.75

1.85

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, TJ = 150°C)

(Rated dc Voltage, TJ = 25°C)

iR900

Maximum Reverse Recovery Time

(IF = 1.0 Amp, di/dt = 50 Amp/ms)

(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)

trr 100

Maximum Forward Recovery Time

(IF = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V)

tfr 75 ns

Controlled Avalanche Energy (See Test Circuit in Figure 6) WAVAL 20 mJ

Typical Peak Reverse Recovery Current

(IF = 1.0 A, di/dt = 50 A/ms)

IRM 2 A

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v2.0%.

ORDERING INFORMATION

Device Marking Package Shipping†

MUR480E

Axial Lead* 500 Units / Bulk

MUR480EG Axial Lead* 500 Units / Bulk

MUR480ERL Axial Lead* 1500 / Tape & Reel

MUR480ERLG Axial Lead* 1500 / Tape & Reel

MUR480ES

Axial Lead* 500 Units / Bulk

MUR480ESG Axial Lead* 500 Units / Bulk

MUR4100E

Axial Lead* 500 Units / Bulk

MUR4100EG Axial Lead* 500 Units / Bulk

MUR4100ERL Axial Lead* 1500 / Tape & Reel

MUR4100ERLG Axial Lead* 1500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*This package is inherently Pb−Free.

MUR480EG, MUR4100EG

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MUR480EG, MUR4100EG

Figure 1. Typical Forward Voltage

vF, INSTANTANEOUS VOLTAGE (VOLTS)

0.2 0.80.4 1.2

0.03

0.1

0.3

0.2

2.0

1.0

0.02

7.0

3.0

0.5

5.0

0.05

, INSTANTANEOUS FORWARD CURRENT (AMPS)

VR, REVERSE VOLTAGE (VOLTS)

0 200100 400

100

0.01

0.004

200

1.0

0.4

0.2

4.0

2.0

TJ = 175°C

300 700

Figure 2. Typical Reverse Current*

TA, AMBIENT TEMPERATURE (°C)

050

4.0

2.0

6.0

8.0

200

Figure 3. Current Derating

(Mounting Method #3 Per Note 2)

Figure 4. Power Dissipation

0 2.0

2.0

4.0

6.0

8.0

4.0

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

PF(AV)

Figure 5. Typical Capacitance

0.7

0.07

1.6 1.8 2

100°C

TJ = 175°C25°C

600500

0.1

0.04

0.02

, REVERSE CURRENT ( A)m

100°C

25°C

100 150

, AVERAGE POWER DISSIPATION (WATTS)

IPK

IAV dc

SQUAREWAVE

1.0 3.0 5.0

1.0

3.0

, AVERAGE FORWARD CURRENT (AMPS)

F(AV)

SQUARE WAVE

Rated VR

RqJA = 28°C/W

0.6 1.0 1.4 250

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

7.0

8.0

9.0

20 30 5040

TJ = 25°C

400

5.0

(Capacitive

Load) =20

800 900 1000

0.002

0.001

1000

*The curves shown are typical for the highest voltage

device in the voltage grouping. Typical reverse current

for lower voltage selections can be estimated from these

same curves if VR is sufficiently below rated VR.

5.0

7.0

9.0 TJ = 175°C

MUR480EG, MUR4100EG

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t0t1t2t

VDD

BVDUT

MERCURY

SWITCH

Figure 6. Test Circuit Figure 7. Current−Voltage Waveforms

+VDD

DUT

40 mH COIL

The unclamped inductive switching circuit shown in

Figure 6 was used to demonstrate the controlled avalanche

capability of the new “E’’ series Ultrafast rectifiers. A

mercury switch was used instead of an electronic switch to

simulate a noisy environment when the switch was being

opened.

When S1 is closed at t0 the current in the inductor IL ramps

up linearly; and energy is stored in the coil. At t1 the switch

is opened and the voltage across the diode under test begins

to rise rapidly, due to di/dt effects, when this induced voltage

reaches the breakdown voltage of the diode, it is clamped at

BVDUT and the diode begins to conduct the full load current

which now starts to decay linearly through the diode, and

goes to zero at t2.

By solving the loop equation at the point in time when S1

is opened; and calculating the energy that is transferred to

the diode it can be shown that the total energy transferred is

equal to the energy stored in the inductor plus a finite amount

of energy from the VDD power supply while the diode is in

breakdown (from t1 to t2) minus any losses due to finite

component resistances. Assuming the component resistive

elements are small Equation (1) approximates the total

energy transferred to the diode. It can be seen from this

equation that if the VDD voltage is low compared to the

breakdown voltage of the device, the amount of energy

contributed by the supply during breakdown is small and the

total energy can be assumed to be nearly equal to the energy

stored in the coil during the time when S1 was closed,

Equation (2).

The oscilloscope picture in Figure 8, shows the

information obtained for the MUR8100E (similar die

construction as the MUR4100E Series) in this test circuit

conducting a peak current of one ampere at a breakdown

voltage of 1300 V, and using Equation (2) the energy

absorbed by the MUR8100E is approximately 20 mjoules.

Although it is not recommended to design for this

condition, the new “E’’ series provides added protection

against those unforeseen transient viruses that can produce

unexplained random failures in unfriendly environments.

AVAL [1

2LI 2

LPK ǒBVDUT

BVDUT–VDDǓ

AVAL [1

2LI 2

LPK

Figure 8. Current−Voltage Waveforms

CHANNEL 2:

0.5 AMPS/DIV.

CHANNEL 1:

VDUT

500 VOLTS/DIV.

TIME BASE:

20 ms/DIV.

EQUATION (1):

EQUATION (2):

CH1 CH2 REF REF

CH1

CH2

ACQUISITIONS

SAVEREF SOURCE

1 217:33 HRS

STACK

A20ms953 V VERT500V

50mV

MUR480EG, MUR4100EG

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Lead Length, L (IN)

Mounting

Method 1/8 1/4 1/2 Units

RqJA

51 53

59 61

°C/W

TYPICAL VALUES FOR RqJA IN STILL AIR

Data shown for thermal resistance junction−to−ambient

(RqJA) for the mountings shown is to be used as typical

guideline values for preliminary engineering or in case the

tie point temperature cannot be measured.

NOTE 2 − AMBIENT MOUNTING DATA

MOUNTING METHOD 1

MOUNTING METHOD 2

MOUNTING METHOD 3

3/4

ÉÉÉÉÉÉÉÉÉÉÉ

L L

P.C. Board Where Available Copper

Surface area is small.

ÉÉÉÉÉÉÉÉÉÉÉÉ

L L

Vector Push−In Terminals T−28

ÉÉ

L = 1/2

Board Ground Plane

″

P.C. Board with

1−1/2 ″x1−1/2″Copper Surface

MUR480EG, MUR4100EG

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PACKAGE DIMENSIONS

AXIAL LEAD

CASE 267−05

(DO−201AD)

ISSUE G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.287 0.374 7.30 9.50

B0.189 0.209 4.80 5.30

D0.047 0.051 1.20 1.30

K1.000 --- 25.40 ---

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PUBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MUR480E/D

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