LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon MMBT2222AWT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which 3 COLLECTOR is designed for low power surface mount applications. 3 1 BASE 1 2 2 EMITTER CASE 419-02, STYLE 3 SOT-323 /SC - 70 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage V CBO 75 Vdc Emitter-Base Voltage V 6.0 Vdc 600 mAdc Collector Current -- Continuous EBO IC THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW RJA TJ , Tstg 833 -55 to +150 C/W C Total Device Dissipation FR- 5 Board, TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT2222AWT1 = 1P ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 40 -- Vdc V (BR)CBO 75 -- Vdc V 6.0 -- Vdc I BL -- 20 nAdc I CEX -- 10 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (I C = 1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) Base Cutoff Current (V CE = 60 Vdc, V EB = 3.0 Vdc) Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) CE (BR)EBO EB 1. Pulse Test: Pulse Width<300 s, Duty Cycle<2.0%. K1-1/2 LESHAN RADIO COMPANY, LTD. MMBT2222AWT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 35 50 75 100 40 -- -- -- -- -- -- -- 0.3 1.0 0.6 -- 1.2 2.0 fT 300 -- MHz C obo -- 8.0 pF C ibo -- 30 pF h ie 0.25 1.25 k h re -- 4.0 X 10 h fe 75 375 -- h oe 25 200 mhos NF -- 4.0 dB ON CHARACTERISTICS (1) DC Current Gain (1) (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 150 mAdc, V CE = 10 Vdc) (I C = 500 mAdc, V CE = 10 Vdc) Collector-Emitter Saturation Voltage(1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) Base-Emitter Saturation Voltage(1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) hFE -- VCE(sat) V Vdc Vdc BE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 20 mAdc, V CE= 20Vdc, f = 100 MHz) Output Capacitance (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Small-Signal Current Gain (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Output Admittance (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Noise Figure (V CE= 10 Vdc, I C = 100 Adc, R S= 1.0 k, f = 1.0 kHz) -4 SWITCHING CHARACTERISTICS Delay Time (V CC = 3.0 Vdc, V BE= - 0.5 Vdc td -- 10 Rise Time I C = 150 mAdc, I B1 = 15 mAdc) tr -- 25 ns Storage Time (V CC = 30 Vdc, I C = 150 mAdc ts -- 225 ns Fall Time I B1 = I B2 = 15 mAdc) tf -- 60 1. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. K1-2/2